SHDC624122

SHDC624122

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHDC624122 - HERMETIC SILICON CARBIDE RECTIFIER - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SHDC624122 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4984, REV. B SHDC624122 SHDC624122P SHDC624122N SHDC624122D HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 40 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-258 PACKAGE WITH CERAMIC SEAL FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES • NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR • SCREENED VERSIONS ARE AVAILABLE MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT PER LEG (With Cathode Maintained @ TC = 65 OC) MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG (t = 8.3ms, Sine) TC = 25 OC MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN PER LEG O (t = 10μs, pulse) TC = 25 C MAXIMUM POWER DISSIPATION, TC = 25 OC MAXIMUM THERMAL RESISTANCE, Junction to Case, Per Dual Package MAXIMUM OPERATING TEMPERATURE RANGE MAXIMUM STORAGE TEMPERATURE RANGE* ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. SYMBOL PIV IO IFRM IFSM MAX. 1200 20 60 UNITS Volts Amps Amps 250 Amps Pd RθJC Top Tstg 80 0.5 -55 to +175 -55 to +200 W °C/W °C °C * Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C. ELECTRICAL CHARACTERISTICS CHARACTERISTIC FORWARD VOLTAGE DROP PER LEG(If = 20A) Vf TJ = 25 °C TJ = 175 °C REVERSE CURRENT PER LEG (1200V PIV) Ir TJ = 25 °C TJ=175 °C JUNCTION CAPACITANCE (Vr =400V, f = 1MHz) CT PER LEG TJ = 25 °C TOTAL CAPACITIVE CHARGE PER LEG (VR=1200V IF=10A di/dt=500A/μs TJ=25°C) QC TYP 1.6 2.5 0.02 0.04 140 100 MAX. 1.8 3.0 0.40 2.00 N/A N/A UNITS Volts mA pF nC • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA, PROVISONAL DATA ONLY DATA SHEET 4984, REV. B SHDC624122 SHDC624122P SHDC624122N SHDC624122D MECHANICAL DIMENSIONS: IN Inches / mm .165 (4.19 Dia. .155 3.94) .695 (17.65 .685 17.40) .270 (6.86 .240 6.10) .045 (1.14 .035 0.89) TO-258 .707 (17.96 .697 17.70) 1.302(33.07 1.20230.53) .835 (21.21 .815 20.70) .550 (13.97 .530 13.46) 1 2 3 .065 (1.65 .055 1.40) 3 Places .200(5.08) BSC 2 Places .140(3.56) BS PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER/COMMON CATHODE (P) DUAL RECTIFIER/COMMON ANODE (N) DUAL RECTIFIER/DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/ CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE SCHEMATIC 1 2 SINGLE 3 1 2 3 COMMON CATHODE 1 2 3 COMMON ANODE 3 2 DOUBLER 1 • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA, PROVISONAL DATA ONLY DATA SHEET 4984, REV. B SHDC624122 SHDC624122P SHDC624122N SHDC624122D TYPICAL PERFORMANCE PER LEG Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche capabilities of the device are limited. Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially damaging conditions in their applications. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com •
SHDC624122
1. 物料型号: - 型号:SHDC624122P、SHDC624122N、SHDC624122D

2. 器件简介: - 描述:1200-VOLT, 40 AMP功率硅碳化物整流器,采用密封的TO-258封装,陶瓷密封。 - 特点:无恢复时间或反向恢复损耗,开关行为不受温度影响,提供屏蔽版本。

3. 引脚分配: - 单整流器:PIN1为阴极,PIN2和PIN3为阳极。 - 双整流器/共阴极(P):PIN1为阳极1,PIN2为共阴极,PIN3为阳极2。 - 双整流器/共阳极(N):PIN1为阴极1,PIN2为共阳极,PIN3为阴极2。 - 双整流器/倍压器(D):PIN1为阳极,PIN2为阳极/阴极,PIN3为阴极。

4. 参数特性: - 最大反向峰值电压(PIV):1200伏特 - 最大直流输出电流每腿(Io),阴极保持在65°C时:20安培 - 最大重复正向浪涌电流每腿(IFRM),8.3ms正弦波,Tc=25°C:60安培 - 最大非重复正向浪涌电流每腿(IFSM),10s脉冲,Tc=25°C:250安培 - 最大耗散功率(Pd),To=25°C:80瓦特 - 最大热阻,结到外壳,每双封装(RJC):0.5°C/W - 最大工作温度范围(Top):-55至+175°C - 存储温度范围(Tstg):-55至+200°C

5. 功能详解应用信息: - 正向电压降每腿(I=20A):T=25°C时为1.6V,TJ=175°C时为2.5V。 - 反向电流每腿(1200V PIV):T=25°C时为0.02mA,TJ=175°C时为2.00mA。 - 结电容(Vf=400V,f=1MHz):CT每腿为140pF。 - 总电容电荷每腿(VR=1200V,I=10A,di/dt=500A/s,TJ=25°C):Qc为100nC。 - 应用说明:客户应意识到,当前SiC技术发展阶段,设备的反向雪崩能力有限。客户设计需要适应这些限制,并避免在应用中使设备暴露于此类及其他可能损坏的条件。

6. 封装信息: - 封装类型:TO-258,具体尺寸信息见PDF文档中的机械尺寸图。
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