SPM4012006

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 5024, Preliminary SPM4012006 Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 60 VOLT, 12 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 12A peak at 60V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision current sense reistors. The device does not need heat sinking and is housed in an encapsulated sealed enclosure. The drive input signals are TTL compatable. (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE PARAMETER MOSFET SPECIFICATIONS (Per Device) Drain-to-Source Breakdown Voltage BVDSS 60 V Continuos Drain Current TC = 25 OC TC = 100 C O ID - - 12 8.7 A Pulsed Drain Current, Pulse Width limited to 1 msec Zero Gate Voltage Drain Current VDS = 60V, VGS=0V Ti=25oC VDS= 60 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, ID= 7.5A, VGS = 10V, Maximum Thermal Resistance Tj = 25 C Tj = 150 C O O IDM ICSS - - 97 A 20 250 RDSon 7.4 14.8 RθJC Tjmax Tjmax tr tf 9.4 18.8 35 o uA uA mΩ C/W o Maximum operating Junction Temperature -40 - 150 C Maximum Storage Junction Temperature Rise Time Fall Time -55 20 20 150 o C ns ns • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 5024, Preliminary SPM4012006 DIODES CHARACTERISTICS (Per Device) Continuous Source Current Diode Forward Voltage, IS = 7.2A, Tj = 25 OC IS VSD trr Qrr 2.3 1.3 A V Diode Reverse Recovery Time (IS=7.5A, di/dt=100 A/µs) Reverse Recovery Charge (Isd=7.5A, dIsd/dt=100A/us) - 33 38 50 57 nsec nC Gate Driver Supply Voltage Supply Input Current (Without PWM Switching) 2 Input Drive, On Current Input Drive, Off Current Boost Capacitor Value Boost Charging Resistor Ith Cboost Rboost 1 .33 10 10 mA uA uA uF Ohm VCC 10 12 15 V • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 2 SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 5024, Preliminary SPM4012006 Under Voltage Lockout VCCUV+ VCCUV- 8 7.4 8.9 8.2 680 9.8 9.0 820 170 220 90 650 V Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time @ VCC=50V, ID=4A, TC = 25 Dead Time tond tr toffd tf 400 - 100 150 50 520 nsec nsec DC Bus Current Sensor Shunt Resistor Value .01 Ohm Average Switching Current vs. Frequency for each bridge, with both bridges switching, at Tc=100C, Vin=50Vdc. Typical Current vs Freq. 10 Current (A) 1 0 20 40 60 Freq. (KHz) 80 100 120 • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 3 SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 5024, Preliminary SPM4012006 PIN OUT Pin # 1 (16) 2 (15) 3 (14) 4 (13) 5 (12) 6 (11) 7 (10) 8 (9) Name +DC_BUS DRV_A OUT_B +15_VCC ISEN DRV_B OUT_A GND Description Positive Power Supply Bus Logic Level Drive for Side A Output of Bridge, Side B Bias Supply Voltage for Internal Drivers Current Sense Resistor Output Logic level Drive for Side B Output of Bridge, Side A Drive and Power Ground Return () Pin numbers in parenthasis are for the second H-Bridge • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 4 SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 5024, Preliminary SPM4012006 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 5