SPM6G080-060D_07

SENSITRON SEMICONDUCTOR TECHNICAL DATA Data Sheet 4098, Rev. D.1 SPM6G080-060D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum Thermal Resistance RθJC 0.45 o BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - 80 70 170 +/-20 +/- 100 V A A V nA IC 1 10 TC = 25 C O mA mA V VCE(SAT) - 1.7 2.0 C/W Brake IGBT SPECIFICATIONS Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O IC - - 40 25 120 A A Brake Resistor SPECIFICATIONS Maximum Continuous power dissipation Impulse Energy Maximum operating Junction Temperature Maximum Storage Junction Temperature Tjmax Tjmax -40 -55 Pd 2 80 150 150 watt Joules o o C C . • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 of 7 SPM6G080-060D SENSITRON TECHNICAL DATA Data Sheet 4098, Rev. D.1 Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 100 110 10 20 120 o C 10mV/oC o C ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 60A O PIV IF IFSM VF trr RθJC 600 - 1.4 90 - 60 300 1.7 160 0.8 V A A V nsec o Diode Reverse Recovery Time (IF=60A, VRR=300V , di/dt=200 A/µs) Maximum Thermal Resistance C/W Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Reference Voltage (1) VCC HIN, LIN Ith BVin VF VCCUV Itrip-ref tond tr toffd tf - 10 2 5.0 11.5 2.9 - 15 20 5.0 V mA mA V V V V nsec 1.6 1.5 3.0 1.7 12.5 3.1 800 100 1000 100 Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time @ VCC=300V, IC=50A, TC = 25 Input-Output Isolation Voltage 1000 - - V (1) ITRIP Cycle-by cycle current limit is internally set to 70A peak. The set point can be lowered by connecting a resistor between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 2 of 7 SPM6G080-060D SENSITRON TECHNICAL DATA Data Sheet 4098, Rev. D.1 Pin Description Pin Number 1 2 3 4 5 6 7 8 9 10 11 Function Isolated Input for Low-side IGBT of Phase A Return for Input at 1 Isolated Input for High-side IGBT of Phase A Return for Input at 3 Isolated Input for Low -side IGBT of Phase B Return for Input at 5 Isolated Input for High-side IGBT of Phase B Return for Input at 7 Isolated Input for Low-side IGBT of Phase C Return for Input at 9 Isolated Input for High-side IGBT of Phase C Return for Input at 11 NC NC SD (3) Pin Number 17 18 19 20 21 22 23 24 25 26 to 30 31 , 32 Function +15V Rtn (Signal Ground) Fault Output (3) (3) Fault Clear Input +5V Output Over-Current Trip Set point (3) DC Bus Current Output with Total Gain of 0.0365 V/A Case Temperature Output with a gain of 0.010 V/oC Brake IGBT Gate Input Brake IGBT Emitter Input. This input is internally connected to Signal Ground DC Bus return Brake Resistor Terminal. Brake Resistor Shall be Connected Between These Terminals and +VDC DC Bus “+VDC” input Phase C output Phase B output Phase A output Isolated 12 13 14 15 16 33 to 37 38 to 42 43 to 47 48 to 52 Case +15V Input • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 3 of 7 SPM6G080-060D SENSITRON TECHNICAL DATA Data Sheet 4098, Rev. D.1 Package Drawing Top View: • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 4 of 7 SENSITRON TECHNICAL DATA Data Sheet 4098, Rev. D.1 SPM6G080-060D Package Drawing Side View: • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 5 of 7 SPM6G080-060D SENSITRON TECHNICAL DATA Data Sheet 4098, Rev. D.1 Application Notes: a- Shutdown Feature: 1- SD is a dual function input/output, active low input. It is internally pulled high. As a low input shuts down all IGBTs regardless of the Hin and Lin signals. 2- SD is also internally activated by the over-temperature shutdown, over-current limit, undervoltage shutdown, and desaturation protection. 3- Over-temperature shutdown, and over-current limit are not latching features. 4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above the threshold limit. 5- Desaturation shutdown is a latching feature and internally reset after 300 msec. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs except the brake IGBT by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output Feature: 1- Pin 18 Flt is a dual function pin. It is internally pulled high. If pulled down, it will freeze the status of all the six IGBTs regardless of the Hin and Lin signals 2- Pin 18 as an output reports desaturation protection activation. When desaturation protection is activated a low output for about 9 µsec is reported. 3- If any other protection feature is activated, it will not be reported by Pin 18. c- Fault Clear Output: 1- Pin 19 is a fault clear input. It can be used to reset a latching fault condition, due to desaturation protection. 2- Pin 19 is internally pulled down. A latching fault due to desaturation can be cleared by pulling high this input. 3- An internal fault clear is activated after 300 msec delay. If desired to clear the fault earlier, this input can be used. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 6 of 7 SPM6G080-060D SENSITRON TECHNICAL DATA Data Sheet 4098, Rev. D.1 Cleaning Process: Suggested precaution following cleaning procedure: If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the parts be baked immediately after cleaning. This is to remove any moisture that may have permeated into the device during the cleaning process. For aqueous based solutions, the recommended process is to bake for at least 2 hours at 125oC. Do not use solvents based cleaners. Recommended Soldering Procedure: Signal pins 1-24: 210C for 10 seconds max Power pins 25 to 52: 260C for 10 seconds max. Pre-warm module to 125C to aid in power pins soldering. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 7 of 7