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SPECIFICATIONS MODEL PART NO. BLUE OVAL LAMP LED LB770D [Contents] 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Devices -------------------------------------------------Outline Dimensions ----------------------------------Absolute Maximum Ratings ------------------------Electro-Optical Characteristics ---------------------Reliability Tests ---------------------------------------Characteristic Diagrams -----------------------------Bin Code Description --------------------------------Packing -------------------------------------------------2 2 3 4 5 6 8 9 Soldering Profile --------------------------------------- 12 Reference ------------------------------------------------ 13 Precaution For Use ------------------------------------- 14 Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -1- 1. DEVICES Part Number Lens Color Diffusion Source Dice Source Color Blue LB770D Blue Diffused InGaN 2. OUTLINE DEMENSIONS 1.0 DETAIL 0.5 +0.2 CATHODE 0.5±0.05 MAX1.0 -0.0 Y 4.63 4.63 X Notes : 1. All dimensions are in millimeters. 2. Protruded epoxy is 1.0mm maximum. Rev. 0.1 LB770D 2.5±0.05 MIN1.0 MIN28.0 7.0±0.01 5.08 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -2- 3. ABSOLUTE MAXIMUM RATINGS (at Ta = 25ºC) Item Symbol Value Unit DC Forward Current Forward Peak Pulse Current Reverse Voltage Power Dissipation Operating Temperature Storage Temperature Solder Temperature Notes : 1. t ≤ 0.1ms, D = 1/10 2. 3mm bellow seating plane IF IFP 1 VR PD Topr Tstg TS 30 100 5 125 -30 ~ 85 -40 ~ 100 260 ºC for 10 second 2 mA mA V mW ºC ºC ºC Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -3- 4. ELECTRO-OPTICAL CHARACTERISTICS (at IF = 20mA, Ta = 25ºC) Value Item Symbol Min. Luminous Intensity 1 Dominant Wavelength Forward Voltage View Angle Reverse Current (at VR = 5V) Note : 1. Luminous Intensity Tolerance ± 10% Unit Typ. 300 470 3.6 70/40 5 Max. 600 476 4.0 Mcd nm V deg. µA IV 150 464 - λd VF 2θ ½ IR Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -4- 5. RELIABILITY TESTS Item Life Test High Temperature Operating Low Temperature Operating Thermal Shock Resistance to soldering Heat ESD (Human Body Model) High Temperature Storage Low Temperature Storage Temperature Humidity Storage Temperature Humidity Operating Condition Ta = RT, IF = 30mA Ta = 85ºC, IF = 8mA Ta = -30ºC, IF = 20mA Ta = -40ºC (30min) ~ 100º (30min) (Transfer time : 5sec, 1Cycle = 1hr) Ts = 255 ± 5ºC, t = 10sec 1kV, 1.5kΩ ; 100pF Ta = 100ºC Ta = -40ºC Ta = 85ºC, RH = 85% Ta = 85ºC, RH = 85% IF = 8mA Note 1000hrs 1000hrs 1000hrs 100cycles 1 time 1 time 1000hrs 1000hrs 1000hrs 100hrs Failures 0/22 0/22 0/22 0/50 0/22 0/22 0/22 0/22 0/22 0/22 < Judging Criteria For Reliability Tests > VF IR IV Notes : 1. USL : Upper Standard Level USL 1 X 1.2 USL X 2.0 LSL 2 X 0.5 2. LSL : Lower Standard Level. Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -5- 6. CHARACTERISTIC DIAGRAMS Irel = f (θ ), Ta= 25ºC 1.0 100 IF = f (VF), Ta= 25ºC X Y 0.8 Relative Luminous Intensity 0.6 Forward Current IF [mA] -60 -30 0 30 60 90 10 0.4 0.2 1 0.0 -90 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Off Axis Angle [deg.] Forward Voltage VF [V] Off Axis Angle vs. Relative Intensity Forward Voltage vs. Forward Current IV = f (IF), Ta= 25ºC 1.6 40 IF = f (Ta), Ta= 25ºC Relative Luminous Intensity 0.8 Forward Current IF [mA] 0 5 10 15 20 25 30 1.2 30 20 0.4 10 0.0 0 -40 -20 0 20 40 60 o 80 100 Forward Current IF [mA] Ambient Temperature Ta [ C] Forward Current vs. Relative Intensity Ambient Temperature vs. Forward Current Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -6- Irel = f ( λd ), TA= 25ºC, IF= 20mA 1.0 1.3 1.2 IV /IV(25C)= f (TA ), IF= 20mA Relative Luminous Intensity Relative Luminuos Intensity 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.0 400 500 600 700 0.5 - 40 -20 0 20 40 60 o 80 100 Wavelength [nm] Ambient Temperature Ta[ C] Wavelength vs. Relative Intensity Ambient Temperature vs. Relative Intensity Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -7- 7. BIN CODE DESCRIPTION BIN CODE Intensity S Color Ranks 1 Forward Voltage 2 Intensity (mcd) @ IF = 20mA BIN CODE S T Min. 150 300 Max. 300 600 Dominant Wavelength (nm) @ IF = 20mA BIN CODE 1 2 Min. 464 470 Max. 470 476 Forward Voltage (V) @ IF = 20mA BIN CODE 1 2 Min. 3.0 3.5 Max. 3.5 4.0 Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -8- 8. PACKING 1) Bulk Packing (1) Antistatic poly vinyl bag apply Poly bag: 5φ Lamp Series : 500pcs 3φ Lamp Series : 500pcs (2) Inner box structure 70mm SEOUL SEMICONDUCTOR CO.,LTD LXXXX QTY : pcs XXX 170mm RANK LOT : 200X.XX.XX OOO 260mm SEOUL SEMICONDUCTOR CO., LTD (3) Outer box structure Box : 27 boxes 315.0mm 485.0mm Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -9- 97.0mm Box : 2 poly bags LX000 XXXXXXXX XXXXXXXX RANK 2) Tapping Outline Dimensions P 0±1.3 0±2.0 F W1 W2 Wo Po Do Ho Package Dimensions (unit : mm) Ho* W Wo W1 W2 18.0 +1.0 -0.5 13.0±0.3 1.0±0.5 9.0±0.5 1 Box contain quantity. ∗ 3φ Lamp Series : 3000pcs * 5φ Lamp Series : 2000pcs P Po F Do 12.7±0.5 12.7±0.3 5.0±0.5 φ4.0±0.5 * Remark : Ho - users define. Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -10- W 3) Forming Outline Dimensions P H1 F Ho H W1 W2 Wo Po Do Package Dimensions (unit : mm) H* Ho * H1 * W Wo W1 18.0 +1.0 -0.5 13.0±0.3 1.0±0.5 W2 P Po F Do 9.0±0.5 12.7±0.5 12.7±0.3 5.0±0.5 φ4.0±0.5 1 Box contain quantity. ∗ 3φ Lamp Series : 2000pcs * 5φ Lamp Series : 1500pcs * Remark : H / Ho / H1- users define. Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -11- W 9. SOLDERING PROFILE 1) Wave Soldering Conditions / Profile • Preliminary heating to be at 85ºC(120 ºC max) for 20 seconds(60 seconds max). • Soldering heat to be at 235 ºC (260ºC max) for 5 seconds (10 seconds max.) • Soak time above 200 ºC is 5 seconds 250 PEAK 200 5s (10s Max) 235 ºC(260 ºC Max) Temperature [ C] 150 O PREHEAT 100 20s (30s Max) 85 ºC(100 ºC max) 50 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 T im e [s ] 2) Hand Soldering conditions • Not more than 5 seconds at max. 300ºC, under Soldering iron. Note : In case the soldered products are reused in soldering process, we don’t guarantee the products. Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -12- 10. PART NUMBERING SYSTEM 1 2 3 4 5 6 7 8 A B C L* * * * * * * - * * * 1) Lamp LED initial 2) Color U: Ultra Violet, Y : Yellow (580~600nm) W : White 3) If the products have 2 or 3chips GR : Green + Red ( according to wavelength), 4) Outline type 1 : 3x2(square), 6 : 3Phi Oval, 5) Half angle 1: ~14O, 2: 15~24O , 3: 25~34O, 4: 35~44O, 5 : 45~54O… 0 : more than 100O 6) 1st Development according to a chip 7) 2nd Development (other material) D : diffused C : colored Z : zener chip attached 8) Stand off type A, B, C : Bin cord description A: IV, B: WD C: VF 2 : 5x2(square), 7 : 5Phi Oval 3 : Phi3, 5 : Phi 5 , FL : Full color B : Blue (460~490nm), O : Orange (600~620nm) M : Warm C : Cyan (490~510nm) R : Red (620~700nm) I : Infrared T : True Green (510~540nm), G : Yellow-Green (540~580nm) Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -13- 11. PRECAUTION FOR USE 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) In order to avoid the absorption of moisture, it is recommended to store in the dry box (or desiccators) with a desiccant . In case of more than 1 week passed after opening or change color of indicator on desiccant components shall be dried 10-12Hr, at 60±5℃. In case of supposed the components is humid, shall be dried dip-solder just before, 12Hr at 80±5℃ or 10Hr at 100±5℃. Any mechanical force or any excess vibration shall not be accepted to apply during cooling process to normal temp. after soldering. Quick cooling shall not be avoid. Components shall not be mounted on warped direction of PCB. Anti radioactive ray design is not considered for the products listed here in. This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA should be used. When the LEDs are illuminating, operating current should be decided after considering the ambient maximum temperature. LEDs must be stored to maintain a clean atmosphere. If the LEDs are stored for 3 months or more after being shipped from SSC, a sealed container with a nitrogen atmosphere should be used for storage. The LEDs must be soldered within seven days after opening the moisture-proof packing. Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. The appearance and specifications of the product may be modified for improvement without notice. 11) 12) 13) Rev. 0.1 LB770D SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 -14-