S1S0-3030279506-0000003S-00001 数据手册
Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Actualize a spectrum closest to the sunlight
Mid-Power LED – 3030 Series
S1S0-3030xx9503-00000000-00001
(Cool, Neutral, Warm)
RoHS
Product Brief
Description
Features and Benefits
•
This White Colored surface-mount LED
comes in standard package dimension.
Package Size : 3.0x3.0x0.6mm
•
It has a substrate made up of a molded
plastic reflector sitting on top of a lead
frame.
•
•
•
•
•
•
•
•
The die is attached within the reflector
cavity and the cavity is encapsulated by
silicone.
•
Thermally Enhanced Package Design
Mid Power to High Power up to 1W
Max. Driving Current 200mA
Compact Package Size
High Color Quality with CRI Min.95 (R9>85)
Pb-free Reflow Soldering Application
Eye Safety (Exempt 5000K)
Key Applications
•
•
•
•
The package design coupled with
careful selection of component
materials allow these products to
perform with high reliability.
Replacement lamps – Bulb, Tube
Commercial
Industrial
Residential
Table 1. Product Selection Table
Reference Code
Color
Cool
White
STW9C2SB-S
Neutral
White
Warm
White
CRI
Nominal
CCT
Part Number
6500K
S1S0-3030659506-00000000-00001
5700K
S1S0-3030579506-00000000-00001
5000K
S1S0-3030509506-00000000-00001
4000K
S1S0-3030409506-00000000-00001
3500K
S1S0-3030359506-00000000-00001
3000K
S1S0-3030309506-00000000-00001
2700K
S1S0-3030279506-00000000-00001
Min
95
1
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Table of Contents
Index
•
Product Brief
1
•
Table of Contents
2
•
Performance Characteristics
3
•
Characteristics Graph
5
•
Color Bin Structure
11
•
Mechanical Dimensions
15
•
Recommended Solder Pad
16
•
Reflow Soldering Characteristics
17
•
Emitter Tape & Reel Packaging
18
•
Product Nomenclature
20
•
Handling of Silicone Resin for LEDs
21
•
Precaution For Use
22
•
Company Information
25
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Performance Characteristics
Table 2. Product Selection Guide, IF = 150mA , Tj = 25ºC, RH30%
Min.
CRI, Ra[4]
95
Nominal
CCT [K] [1]
Min. Flux
[lm]
Typ. Luminous
Flux ФV [3] [lm]
Typ. Luminous
Efficacy [lm/W]
@150mA
@150mA
Part Number
6500
90.7
95
101
S1S0-3030659506
-00000000-00001
5700
90.7
96
101
S1S0-3030579506
-00000000-00001
5000
90.7
101
107
S1S0-3030509506
-00000000-00001
4000
90.2
100
106
S1S0-3030409506
-00000000-00001
3500
83.2
99
105
S1S0-3030359506
-00000000-00001
3000
83.2
93
97
S1S0-3030309506
-00000000-00001
2700
83.2
89
93
S1S0-3030279506
-00000000-00001
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
(2) Seoul Semiconductor maintains a tolerance of 5% on Intensity and power measurements.
The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
(3) The lumen table is only for reference.
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Performance Characteristics
Table 3. Characteristics, IF=65mA, Tj= 25ºC, RH30%
Value
Parameter
Symbol
Unit
Min.
Typ.
Max.
Forward Current
IF
-
150
-
mA
Forward Voltage[1]
VF
6.2
-
6.6
V
Luminous Intensity (5000K)[1]
Iv
-
30
(103.7)
-
cd
(lm)
CRI[1]
Ra
95
-
-
Viewing Angle [2]
2Θ1/2
-
120
-
Deg.
Thermal resistance (J to S) [3]
RθJ-S
-
10
-
℃/W
ESD Sensitivity(HBM)
-
Class 3A JESD22-A114-E
Table 4. Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Forward Current
IF
200
mA
Power Dissipation
PD
1.32
W
Junction Temperature
Tj
125
ºC
Operating Temperature
Topr
-40~ + 85
ºC
Storage Temperature
Tstg
-40 ~ + 100
ºC
Notes :
(1) Tolerance : VF :±0.1V, IV :±5%, Ra :±2, x,y :±0.005
(2) 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(3) Thermal resistance : RthJS (Junction / solder)
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
•
Thermal resistance can be increased substantially depending on the heat sink design/operating
condition, and the maximum possible driving current will decrease accordingly.
•
All measurements were made under the standardized environment of Seoul Semiconductor.
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Characteristics Graph
Fig 1. Color Spectrum, Tj = 25ºC
CW
NW
WW
Relative Intensity
1.0
0.5
0.0
300
400
500
600
700
800
Wavelength (nm)
Fig 2. Radiant Pattern, Tj = 25ºC
Relative Intensity (%)
100
80
60
40
20
0
-100
-75
-50
-25
0
25
50
75
100
Angle [Degree]
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Characteristics Graph
Fig 3. Forward Voltage vs. Forward Current, Tj = 25ºC
0.20
Forward Current [A]
0.15
0.10
0.05
0.00
0
1
2
3
4
5
6
7
Forward Voltage [V]
Fig 4. Forward Current vs. Relative Luminous Intensity, Tj = 25ºC
Relative Luminous Intensity [a.u.]
1.5
1.0
0.5
0.0
0
50
100
150
200
Forward Current [mA]
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Characteristics Graph
Fig 5. Forward Current vs. CIE X, Y Shift, Tj = 25ºC
(4200K~7000K)
0.356
0.354
100mA
CIE Y
150mA
200mA
0.352
0.350
0.340
0.342
0.344
0.346
CIE X
(2600K~4200K)
0.410
0.408
200mA 150mA 100mA
CIE Y
0.406
0.404
0.402
0.400
0.454
0.456
0.458
0.460
0.462
CIE X
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Characteristics Graph
Fig 6. Junction Temperature vs. Relative Luminous Intensity, IF=150mA
Relative Luminous Intensity [a.u]
1.0
0.8
0.6
0.4
0.2
0.0
25
45
65
85
105
125
O
Junction Temperature Tj( C)
Fig 7. Junction Temperature vs. Relative Forward Voltage, IF=150mA
Relative Luminous Intensity [a.u]
1.0
0.8
0.6
0.4
0.2
0.0
25
45
65
85
105
125
O
Junction Temperature Tj( C)
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Characteristics Graph
Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF=150mA
(4200K~7000K)
0.385
0.380
CIE Y
0.375
o
25 C
o
70 C
0.370
o
100 C
0.365
o
125 C
0.360
0.355
0.350
0.355
0.360
0.365
0.370
0.375
CIE X
(2600K~4200K)
0.420
0.415
o
25 C
CIE Y
o
70 C
0.410
o
100 C
0.405
o
125 C
0.400
0.395
0.455
0.460
0.465
0.470
0.475
CIE X
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Characteristics Graph
Fig 9. Ambient Temperature vs. Maximum Forward Current, Tj_max = 125℃
250
Forward Current [mA]
200
Rth j-a = 40℃/W
150
100
50
0
0
20
40
60
80
100
O
Ambient Temperature Ta [ C]
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Color Bin Structure
Table 5. Bin Code description, Tj=25℃, IF=65mA
Luminous Flux (lm) @5000K
Typical Forward Voltage (V)
Color Chromaticity
Coordinate
Part Number
S1S03030xx950600000000-00001
Bin
Code
Min.
Max.
Bin
Code
Min.
Max.
K28
90.7
97.2
Z62
6.2
6.4
L30
97.2
103.7
Z64
6.4
6.6
L32
103.7
110.2
Table 6. Intensity rank distribution
Available ranks
CCT
CIE
IV Rank
6000 ~ 7000K
A
K26
K28
L30
L32
5300 ~ 6000K
B
K26
K28
L30
L32
4700 ~ 5300K
C
K26
K28
L30
L32
3700 ~ 4200K
E
K26
K28
L30
L32
2900 ~ 3200K
G
K26
K28
L30
L32
2600 ~ 2900K
H
K26
K28
L30
L32
*Notes :
All measurements were made under the standardized environment of Seoul Semiconductor.
In order to ensure availability, single color rank will not be orderable.
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Cool white), Tj=25℃, IF=150mA
0.38
5000K
CB
4C
0.36
CA
5700K
3C
BB
4B
6500K
3B
AB
0.34
3A
0.32
AD
CD
C
BC
4A
AA
CC
BA
BD
B
AC
A
0.30
0.30
0.32
0.34
0.36
6500K 3Step
3A
Center point 0.3123 : 0.3282
Major Axis a
0.0066
Minor Axis b
0.0027
Ellipse
58
Rotation Angle
5700K 3Step
3B
Center point 0.3287 : 0.3417
Major Axis a
0.0071
Minor Axis b
0.0030
Ellipse
59
Rotation Angle
5000K 3Step
3C
Center point 0.3447 : 0.3553
Major Axis a
0.0081
Minor Axis b
0.0035
Ellipse
60
Rotation Angle
6500K 4Step
4A
Center point 0.3123 : 0.3282
Major Axis a
0.0088
Minor Axis b
0.0036
Ellipse
58
Rotation Angle
5700K 4Step
4B
Center point 0.3287 : 0.3417
Major Axis a
0.0095
Minor Axis b
0.0040
Ellipse
59
Rotation Angle
5000K 4Step
4C
Center point 0.3447 : 0.3553
Major Axis a
0.0108
Minor Axis b
0.0047
Ellipse
60
Rotation Angle
AA
CIE X
0.3028
0.3048
0.3131
0.3115
AB
CIE Y
0.3304
0.3209
0.329
0.3393
CIE X
0.3115
0.3131
0.3213
0.3205
CIE Y
0.3462
0.3353
0.3423
0.3539
CIE X
0.3292
0.3293
0.3371
0.3376
CIE Y
0.3616
0.3493
0.3558
0.3687
CIE X
0.3463
0.3452
0.3533
0.3551
BA
CIE X
0.3207
0.3215
0.3293
0.3292
CIE X
0.3131
0.3146
0.3221
0.3213
CIE Y
0.3539
0.3423
0.3493
0.3616
CIE X
0.3293
0.3294
0.3366
0.3371
CIE Y
0.3687
0.3558
0.3624
0.376
CIE X
0.3452
0.344
0.3514
0.3533
BB
CA
CIE X
0.3376
0.3371
0.3452
0.3463
AC
CIE Y
0.3393
0.329
0.3371
0.3481
CIE X
0.3048
0.3068
0.3146
0.3131
CIE Y
0.3423
0.3306
0.3369
0.3493
CIE X
0.3215
0.3222
0.3294
0.3293
CIE Y
0.3558
0.3428
0.3487
0.3624
CIE X
0.3371
0.3366
0.344
0.3452
BC
CB
Rev. 1.0, Apr. 10, 2019
AD
CIE Y
0.329
0.3187
0.3261
0.3371
BD
CC
12
CIE Y
0.3209
0.3113
0.3187
0.329
CIE Y
0.3353
0.3243
0.3306
0.3423
CD
CIE Y
0.3493
0.3369
0.3428
0.3558
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Cool white), Tj=25℃, IF=150mA
0.40
4000K
EB
4E
EA
0.38
3E
EC
ED
0.36
E
0.34
0.34
0.36
0.38
0.40
4000K 3Step
3E
Center point 0.3818 : 0.3797
Major Axis a
0.0094
Minor Axis b
0.0040
Ellipse
53
Rotation Angle
4000K 4Step
4E
Center point 0.3818 : 0.3797
Major Axis a
0.0125
Minor Axis b
0.0053
Ellipse
53
Rotation Angle
EA
EB
EC
ED
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3736
0.3874
0.3871
0.3959
0.3828
0.3803
0.3703
0.3726
0.3703
0.3726
0.3828
0.3803
0.3784
0.3647
0.367
0.3578
0.3828
0.3803
0.3952
0.388
0.3898
0.3716
0.3784
0.3647
0.3871
0.3959
0.4006
0.4044
0.3952
0.388
0.3828
0.3803
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Cool white), Tj=25℃, IF=150mA
0.44
2700K
3000K
HB
HA
0.42
4H
GB
GA
4G
3H
3G
0.40
HC
HD
GC
H
GD
G
0.38
0.36
0.40
0.46
0.48
2700K 3Step
3 Step
Center point 0.4578 : 0.4101
Major Axis a
0.0079
Minor Axis b
0.0041
Ellipse
54
Rotation Angle
3000K 4Step
4 Step
Center point 0.4338 : 0.4030
Major Axis a
0.0113
Minor Axis b
0.0055
Ellipse
53
Rotation Angle
2700K 4Step
4 Step
Center point 0.4578 : 0.4101
Major Axis a
0.0105
Minor Axis b
0.0055
Ellipse
54
Rotation Angle
GB
CIE Y
0.4165
0.399
0.4033
0.4212
CIE X
0.443
0.4345
0.4468
0.4562
CIE Y
0.426
0.4077
0.4104
0.4289
CIE X
0.4687
0.4585
0.4703
0.481
HA
CIE X
0.4562
0.4468
0.4585
0.4687
0.44
3000K 3Step
3 Step
Center point 0.4338 : 0.4030
Major Axis a
0.0085
Minor Axis b
0.0041
Ellipse
53
Rotation Angle
GA
CIE X
0.4299
0.4223
0.4345
0.443
0.42
GC
CIE Y
0.4212
0.4033
0.4077
0.426
CIE X
0.4345
0.4259
0.4373
0.4468
CIE Y
0.4289
0.4104
0.4132
0.4319
CIE X
0.4585
0.4483
0.4593
0.4703
HB
Rev. 1.0, Apr. 10, 2019
GD
CIE Y
0.4033
0.3853
0.3893
0.4077
CIE X
0.4223
0.4147
0.4259
0.4345
CIE Y
0.4104
0.3919
0.3944
0.4132
CIE X
0.4468
0.4373
0.4483
0.4585
HC
14
CIE Y
0.399
0.3814
0.3853
0.4033
HD
CIE Y
0.4077
0.3893
0.3919
0.4104
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Mechanical Dimensions
Top View
Bottom View
Cathode
Anode (+)
Circuit
Side View
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.2mm
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Recommended Solder Pad
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) This drawing without tolerances are for reference only
(4) Undefined tolerance is ±0.1mm
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Reflow Soldering Characteristics
IPC/JEDEC J-STD-020
Table 7.
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (Tsmax to Tp)
3° C/second max.
3° C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak Temperature (Tp)
215℃
260℃
Time within 5°C of actual Peak
Temperature (tp)2
10-30 seconds
20-40 seconds
Ramp-down Rate
6 °C/second max.
6 °C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Emitter Tape & Reel Packing
Anode (+)
( Tolerance: ±0.2, Unit: mm )
(1) Quantity : 4,500pcs/Reel
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm
(3) Adhesion Strength of Cover Tape
Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape
at the angle of 10˚ to the carrier tape.
(4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package.
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Emitter Tape & Reel Packing
Reel
Aluminum Bag
Outer Box
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Product Nomenclature
Table 8. Part Numbering System : X1X2X3X4X5X6X7X8-X9X10
Part Number Code
Description
Part Number
Value
X1
Company
S
Seoul Semiconductor
X2
Level of Integration
1
Discrete LED
X3X4
Technology
S0
Sunlike
X5X6X7X8
Dimension
3030
X9X10
CCT
xx
X11X12
CRI
95
X13X14
Vf
06
X15X16X17
Characteristic code
Flux Rank
000
X18X19X20
Characteristic code
Vf Rank
000
X21X22
Characteristic code
Color Step
00
X23X24
Type
00
X25X26X27
Internal code
001
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) When populating boards in SMT production, there are basically no restrictions regarding the form
of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s
reflector area.
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These
conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust.
As mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.
(5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be
assured that these solvents do not dissolve the package or resin.
Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this.
product with acid or sulfur material in sealed space.
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend store in a dry box with a desiccant.
The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of
RH50%.
(2) Use Precaution after Opening the Packaging
Use SMT techniques properly when you solder the LED as separation of the lens may affect the
light output efficiency.
Pay attention to the following:
a. Recommend conditions after opening the package
-Sealing / Temperature : 5 ~ 40℃Humidity : less than RH30%
b. If the package has been opened more than 4 week(MSL_2a) or the color of the
desiccant changes, components should be dried for 10-12hr at 60±5℃
(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.
(4) Do not rapidly cool device after soldering.
(5) Components should not be mounted on warped (non coplanar) portion of PCB.
(6) Radioactive exposure is not considered for the products listed here in.
(7) Gallium arsenide is used in some of the products listed in this publication.
These products are dangerous if they are burned or shredded in the process of disposal.
It is also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed of.
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(9) When the LEDs are in operation the maximum current should be decided after measuring
the package temperature.
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Product Data Sheet
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Precaution for Use
(10) The appearance and specifications of the product may be modified for improvement without
notice.
(11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.
(12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(13) Attaching LEDs, do not use adhesives that outgas organic vapor.
(14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF.
If the reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(15) Similar to most Solid state devices;
LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS).
Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Precaution for Use
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
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Product Data Sheet
S1S0-3030xx9506-00000000-00001 – Mid-Power LED
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
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