S1W0-3535277003-00000000-00002

Product Data Sheet SZ5-M3-WX-XX - High-power LED Z Power LED – Z5-M3 S1W0-3535xxxx03-00000000-00002 RoHS Product Brief Description Features and Benefits • The Z-Power series is designed for high flux output applications with high current operation capability. • It incorporates state of the art SMD design and low thermal resistant material. • • • • • • • The Z Power LED is ideal light sources for directional lighting applications such as Spot Lights, various outdoor applications, automotive lightings and high performance torches . Reference Code SZ5-M3-W0-00 SZ5-M3-WN-00 SZ5-M3-WW-00 Reference Code SZ5-M3-W0-C8 SZ5-M3-WN-C8 SZ5-M3-WW-c8 Rev1.2 June 2019 Color Cool White Neutral White Warm White Color Cool White Neutral White Warm White High Lumen Output and Efficacy Designed for high current operation Low Thermal Resistance ANSI compliant Binning RoHS compliant Ceramic package Key Applications • • • • • Architectural Industrial Outdoor area Exterior Lighting Commercial CRI Nominal CCT Part Number 6500K S1W0-3535657003-00000000-00002 5700K S1W0-3535577003-00000000-00002 5000K S1W0-3535507003-00000000-00002 4000K S1W0-3535407003-00000000-00002 3500K S1W0-3535357003-00000000-00002 3000K S1W0-3535307003-00000000-00002 2700K S1W0-3535277003-00000000-00002 Nominal CCT Part Number 6500K S1W0-3535658003-00000000-00002 5700K S1W0-3535578003-00000000-00002 5000K S1W0-3535508003-00000000-00002 4000K S1W0-3535408003-00000000-00002 3500K S1W0-3535358003-00000000-00002 3000K S1W0-3535308003-00000000-00002 2700K S1W0-3535278003-00000000-00002 Min 70 CRI Min 80 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 5 • Color Bin Structure 10 • Mechanical Dimensions 14 • Recommended Solder Pad 15 • Reflow Soldering Characteristics 16 • Packaging Information 18 • Product Nomenclature 19 • Handling of Silicone Resin for LEDs 20 • Precaution For Use 21 • Company Information 24 Rev1.2 June 2019 2 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Performance Characteristics Table 1. Characteristics Value Parameter Symbol Forward Current [1] Peak Pulsed Forward Current Unit IF [2] Min. Typ. Max. - 700 1500 mA 2000 mA IF Forward Voltage (@700mA, 85ºC) VF - - 2.95 V Junction Temperature Tj - - 150 ºC Viewing angle θ Thermal resistance (J to S) [3] RθJ-S 125 - ESD Sensitivity(HBM) 3.2 degree - K/W Class 2 JEDEC JS-001-2017 Notes : (1) At Junction Temperature 85℃ condition. (2) Pulse width ≤10ms, duty cycle ≤ 10% condition. (3) RθJ-S is tested at 700mA. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. Rev1.2 June 2019 3 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Color Bin Structure Table 2. Bin Code description, IF=700mA, Tj=85℃ Luminous Flux [lm] Typical Forward Voltage [VF] Bin Code Min. Max. V3 218 240 W1 240 256 W2 256 272 W3 272 285 W4 285 299 W5 299 313 W6 313 327 Bin Code Min. Max. G 2.75 2.95 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is 2.0 on CRI measurements. (5) Tolerance is 0.06V on forward voltage measurements. Rev1.2 June 2019 4 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Characteristics Graph Fig 1. Color Spectrum Relative Radiant Power [%] 1.00 0.75 0.50 0.25 0.00 350 400 450 500 550 600 650 700 750 800 Wavelength [nm] Fig 2. Typical Spatial Distribution 100 Relative Luminous Intensity [%] 90 80 70 60 50 40 30 20 10 0 -90 -60 -30 0 30 60 90 Angular Displacement [degrees] Rev1.2 June 2019 5 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj=85℃ 1600 Forward Current [mA] 1400 1200 1000 800 600 400 200 0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Flux, Tj=85℃ Relative Luminous Flux [%] 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 Forward Current [mA] Rev1.2 June 2019 6 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Characteristics Graph Forward Current vs CIE x, y Shift 0.02 CIE ΔCIE xx ΔCIE CIE yy 0.01 0.00 -0.01 -0.02 0 200 400 600 800 1000 1200 1400 1600 Forward Current [mA] (Fig 5) Junction Temp. vs. CIE x, y Shift 0.02 ΔCIE CIE xx ΔCIE CIE yy 0.01 0.00 -0.01 -0.02 25 50 75 100 125 150 Junction Tempurature ['C] (Fig 6) Rev1.2 June 2019 7 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Characteristics Graph Fig 7. Junction Temperature vs. Relative Light Output, IF = 700mA 120 Relative luminous flux [%] 100 80 60 40 20 0 25 50 75 100 125 150 o Junction Temperature [ C] Fig 8. Junction Temperature vs. Relative Forward, IF = 700mA 0.15 0.10  VF 0.05 0.00 -0.05 -0.10 25 50 75 100 125 150 o Junction Temperature [ C] Rev1.2 June 2019 8 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Characteristics Graph Fig 9. Ambient Temperature vs. Maximum Forward Current, Tj(max.)=150℃, IF=1500mA 1600 Rth(j-a)=15℃/W Maximum Current [mA] 1400 Rth(j-a)=20℃/W Rth(j-a)=25℃/W 1200 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 o Ambient Temperature [ C] Rev1.2 June 2019 9 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Color Bin Structure Table 3. Flux Rank Distribution CRI70 Available Rank CCT CIE Flux Rank 6000 ~ 7000K A V3 W1 W2 W3 W4 W5 W6 5300 ~ 6000K B V3 W1 W2 W3 W4 W5 W6 4700 ~ 5300K C V3 W1 W2 W3 W4 W5 W6 3700 ~ 4200K E V3 W1 W2 W3 W4 W5 W6 3500 ~ 3700K F V3 W1 W2 W3 W4 W5 W6 2900 ~ 3200K G V3 W1 W2 W3 W4 W5 W6 2600 ~ 2900K H V3 W1 W2 W3 W4 W5 W6 CRI80 Available Rank CCT CIE 6000 ~ 7000K A V3 W1 W2 W3 W4 W5 W6 5300 ~ 6000K B V3 W1 W2 W3 W4 W5 W6 4700 ~ 5300K C V3 W1 W2 W3 W4 W5 W6 3700 ~ 4200K E V3 W1 W2 W3 W4 W5 W6 3500 ~ 3700K F V3 W1 W2 W3 W4 W5 W6 2900 ~ 3200K G V3 W1 W2 W3 W4 W5 W6 2600 ~ 2900K H V3 W1 W2 W3 W4 W5 W6 Rev1.2 June 2019 Flux Rank 10 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj=85℃, IF=700mA 0.38 5000K CB 5C 0.36 CA 5700K 4C BB 5B 6500K 4B AB 0.34 4A CD C BC 5A AA CC BA BD B AC 0.32 AD A 0.30 0.30 0.32 6500K 4Step 4A Center point 0.3123 : 0.3282 Major Axis a 0.0088 Minor Axis b 0.0036 Ellipse 58 Rotation Angle 6500K 5Step 5A Center point 0.3123 : 0.3282 Major Axis a 0.0110 Minor Axis b 0.0045 Ellipse 58 Rotation Angle 5700K 4Step 4B Center point 0.3287 : 0.3417 Major Axis a 0.0095 Minor Axis b 0.0040 Ellipse 59 Rotation Angle 5700K 5Step 5B Center point 0.3287 : 0.3417 Major Axis a 0.0118 Minor Axis b 0.0050 Ellipse 59 Rotation Angle AA CIE X 0.3028 0.3048 0.3131 0.3115 AB CIE Y 0.3304 0.3209 0.329 0.3393 CIE X 0.3115 0.3131 0.3213 0.3205 CIE Y 0.3462 0.3353 0.3423 0.3539 CIE X 0.3292 0.3293 0.3371 0.3376 CIE Y 0.3616 0.3493 0.3558 0.3687 CIE X 0.3463 0.3452 0.3533 0.3551 BA CIE X 0.3207 0.3215 0.3293 0.3292 Rev1.2 June 2019 0.36 5000K 4Step 4C Center point 0.3447 : 0.3553 Major Axis a 0.0108 Minor Axis b 0.0047 Ellipse 60 Rotation Angle 5000K 5Step 5C Center point 0.3447 : 0.3553 Major Axis a 0.0135 Minor Axis b 0.0058 Ellipse 60 Rotation Angle AC CIE Y 0.3393 0.329 0.3371 0.3481 CIE X 0.3131 0.3146 0.3221 0.3213 CIE Y 0.3539 0.3423 0.3493 0.3616 CIE X 0.3293 0.3294 0.3366 0.3371 CIE Y 0.3687 0.3558 0.3624 0.376 CIE X 0.3452 0.344 0.3514 0.3533 BB CA CIE X 0.3376 0.3371 0.3452 0.3463 0.34 AD CIE Y 0.329 0.3187 0.3261 0.3371 CIE X 0.3048 0.3068 0.3146 0.3131 CIE Y 0.3423 0.3306 0.3369 0.3493 CIE X 0.3215 0.3222 0.3294 0.3293 CIE Y 0.3558 0.3428 0.3487 0.3624 CIE X 0.3371 0.3366 0.344 0.3452 BC CB BD CC 11 CIE Y 0.3209 0.3113 0.3187 0.329 CIE Y 0.3353 0.3243 0.3306 0.3423 CD CIE Y 0.3493 0.3369 0.3428 0.3558 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Color Bin Structure CIE Chromaticity Diagram (Neutral White), Tj=85℃, IF=700mA 4000K 0.40 EB 5E EA 4E 0.38 ED E EC 0.36 0.36 0.38 0.40 4000K 4Step 4E Center point 0.3818 : 0.3797 Major Axis a 0.0125 Minor Axis b 0.0053 Ellipse 53 Rotation Angle 4000K 5Step 5E Center point 0.3818 : 0.3797 Major Axis a 0.0157 Minor Axis b 0.0067 Ellipse 53 Rotation Angle EA EB EC ED CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3736 0.3874 0.3871 0.3959 0.3828 0.3803 0.3703 0.3726 0.3703 0.3726 0.3828 0.3803 0.3784 0.3647 0.367 0.3578 0.3828 0.3803 0.3952 0.388 0.3898 0.3716 0.3784 0.3647 0.3871 0.3959 0.4006 0.4044 0.3952 0.388 0.3828 0.3803 Rev1.2 June 2019 12 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Color Bin Structure CIE Chromaticity Diagram (Warm White), Tj=85℃, IF=700mA 0.44 2700K 0.43 3000K HB HA 0.42 GB 3500K 0.41 5G GA 4H FB 4G 5F 0.40 5H FA HC HD GC 4F 0.39 GD H FC 0.38 G FD F 0.37 0.40 0.42 3500K 4Step 4F Center point 0.4073 : 0.3917 Major Axis a 0.0124 Minor Axis b 0.0055 Ellipse 53 Rotation Angle 3500K 5Step 5F Center point 0.4073 : 0.3917 Major Axis a 0.0155 Minor Axis b 0.0068 Ellipse 53 Rotation Angle FB CIE Y 0.4015 0.3853 0.392 0.4089 CIE X 0.4146 0.4082 0.4223 0.4299 CIE Y 0.4165 0.399 0.4033 0.4212 CIE X 0.443 0.4345 0.4468 0.4562 CIE Y 0.426 0.4077 0.4104 0.4289 CIE X 0.4687 0.4585 0.4703 0.481 GA CIE X 0.4299 0.4223 0.4345 0.443 Rev1.2 June 2019 0.48 2700K 4Step 4H Center point 0.4578 : 0.4101 Major Axis a 0.0105 Minor Axis b 0.0055 Ellipse 54 Rotation Angle 2700K 5Step 5H Center point 0.4578 : 0.4101 Major Axis a 0.0132 Minor Axis b 0.0068 Ellipse 54 Rotation Angle FC CIE Y 0.4089 0.392 0.399 0.4165 CIE X 0.4082 0.4017 0.4147 0.4223 CIE Y 0.4212 0.4033 0.4077 0.426 CIE X 0.4345 0.4259 0.4373 0.4468 CIE Y 0.4289 0.4104 0.4132 0.4319 CIE X 0.4585 0.4483 0.4593 0.4703 GB HA CIE X 0.4562 0.4468 0.4585 0.4687 0.46 3000K 4Step 4G Center point 0.4338 : 0.4030 Major Axis a 0.0113 Minor Axis b 0.0055 Ellipse 53 Rotation Angle 3000K 5Step 5G Center point 0.4338 : 0.4030 Major Axis a 0.0142 Minor Axis b 0.0068 Ellipse 53 Rotation Angle FA CIE X 0.3996 0.3943 0.4082 0.4146 0.44 FD CIE Y 0.392 0.3751 0.3814 0.399 CIE X 0.3943 0.3889 0.4017 0.4082 CIE Y 0.4033 0.3853 0.3893 0.4077 CIE X 0.4223 0.4147 0.4259 0.4345 CIE Y 0.4104 0.3919 0.3944 0.4132 CIE X 0.4468 0.4373 0.4483 0.4585 GC HB GD HC 13 CIE Y 0.3853 0.369 0.3751 0.392 CIE Y 0.399 0.3814 0.3853 0.4033 HD CIE Y 0.4077 0.3893 0.3919 0.4104 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Mechanical Dimensions (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm Rev1.2 June 2019 14 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Recommended Solder Pad (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev1.2 June 2019 15 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev1.2 June 2019 16 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Emitter Tape & Reel Packaging CATHODE MARK P0 P1 P2 E1 F1 D0 D1 T W 4.00±0.10 8.00±0.10 2.00±0.10 1.75±0.10 5.50±0.10 1.50±0.10-0.0 1.50±0.10 0.30±0.05 12.00±0.30 Notes : 1. 2. 3. 4. Quantity : 900pcs/Reel Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm Adhesion Strength of Cover Tape : Adhesion strength to be 10-60g when the cover tape is turned off from the carrier tape at the angle of 10º to the carrier tape Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package Rev1.2 June 2019 17 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Packaging Information Rev1.2 June 2019 18 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Color BinNomenclature Structure Product Table 6. Part Numbering System : Part Number Code Description Part Number Value X1 Company S Seoul Semiconductor X2 Level of Integration 1 Discrete LED X3X4 Technology W0 General White X5X6X7X8 Dimension 3535 X9X10 CCT 40 X11X12 CRI 70 X13X14 Vf 03 X15X16X17 Characteristic code Flux Rank 000 X18X19X20 Characteristic code Vf Rank 000 X21X22 Characteristic code Color Step 00 X23X24 Type 00 X25X26X27 Internal code 002 Rev1.2 June 2019 19 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LED should only be handled from the side. By the way, this also applies to LED without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (7) Avoid leaving fingerprints on silicone resin parts. Rev1.2 June 2019 20 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend storing Z5 Series LED in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use SMT techniques properly when you solder the LED as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing / Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 weeks (MSL 2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LED are in operation the maximum current should be decided after measuring the package temperature. (10) The appearance and specifications of the product may be modified for improvement without notice. (11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. Rev1.2 June 2019 21 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Precaution for Use (12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures ca n penetrate silicone encapsulants of LED and discolor when exposed to heat and photonic energy. Th e result can be a significant loss of light output from the fixture. Knowledge of the properties of the mat erials selected to be used in the construction of fixtures can help prevent these issues. (13) Attaching LEDs, do not use adhesives that outgas organic vapor. (14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the rev erse voltage is applied to LED, migration can be generated resulting in LED damage. (15) LED is sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a li st of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LED may c ause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev1.2 June 2019 22 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev1.2 June 2019 23 www.seoulsemicon.com Product Data Sheet SZ5-M3-WX-XX - High-power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.2 June 2019 24 www.seoulsemicon.com