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S1W0-5050308012-00000000-PS001

S1W0-5050308012-00000000-PS001

  • 厂商:

    SEOUL(首尔半导体)

  • 封装:

    2020

  • 描述:

    LED WM WHITE 3000K 80CRI

  • 数据手册
  • 价格&库存
S1W0-5050308012-00000000-PS001 数据手册
Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED New Generation of WICOP High-Power LED – WICOP Z8 Y50 SZ8-Y50-XX-XX-XX (Cool, Neutral, Warm) LM-80 RoHS Product Brief Description Features and Benefits • The WICOP series is designed for high flux output applications with high current operation capability. • It incorporates state of the art SMD design and low thermal resistant material. Designed for high current operation Low Thermal Resistance A wide CCT range of 2,600~7,000K MacAdam 4 & 5 step ellipse color Binning RoHS compliant Phosphor film directly attached to chip surface . • The WICOP is ideal light sources for directional lighting applications such as Spot Lights, various outdoor applications and high performance torches . Key Applications Residential - Replacement lamps Commercial/Industrial – Retail Display Outdoor area - Flood/Street light, High Bay Table 1. Product Selection Table Reference Code SZ8-Y50-W0-C7-P Color Cool White SZ8-Y50-WN-C7-P Neutral White SZ8-Y50-WW-C7-P Warm White SZ8-Y50-WN-C8-P Neutral White SZ8-Y50-WW-C8-P Warm White Rev2.3, April.26.2019 CRI Nominal CCT Part Number 6500K S1W0-5050657012-00000000-PS001 5700K S1W0-5050577012-00000000-PS001 5000K S1W0-5050507012-00000000-PS001 4000K S1W0-5050407012-00000000-PS001 3500K S1W0-5050357012-00000000-PS001 3000K S1W0-5050307012-00000000-PS001 2700K S1W0-5050277012-00000000-PS001 4000K S1W0-5050408012-00000000-PS001 3500K S1W0-5050358012-00000000-PS001 3000K S1W0-5050308012-00000000-PS001 2700K S1W0-5050278012-00000000-PS001 Min 1 70 80 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 5 • Color bin structure 10 • Mechanical Dimensions 15 • Recommended Solder Pad 16 • Material Structure 17 • Reflow Soldering Characteristics 18 • Emitter Tape & Reel Packaging 19 • Product Nomenclature 21 • Handling of Silicone Resin for LED 22 • Precaution For Use 23 • Company Information 26 Rev2.3, April.26.2019 2 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Performance Characteristics Table 2. Electro Optical Characteristics, IF = 700mA, Tj=85℃ Min. CRI, Ra[4] Nominal CCT [K] [1] Min. Flux [lm] Typ. Luminous Flux ФV [3] [lm] 700mA 1000mA 1500mA Typ. Luminous Efficacy [lm/W] Part Number @700mA 70 6500 1120 1180 1534 2006 151 S1W0-5050657012-00000000-PS001 5700 1120 1220 1586 2074 156 S1W0-5050577012-00000000-PS001 5000 1120 1260 1638 2142 161 S1W0-5050507012-00000000-PS001 4000 1040 1240 1612 2108 158 S1W0-5050407012-00000000-PS001 3500 1040 1150 1495 2542 147 S1W0-5050357012-00000000-PS001 3000 1040 1120 1456 1904 143 S1W0-5050307012-00000000-PS001 2700 1040 1090 1417 1853 139 S1W0-5050277012-00000000-PS001 4000 970 1060 1378 1802 135 S1W0-5050408012-00000000-PS001 3500 970 1020 1326 1734 130 S1W0-5050358012-00000000-PS001 3000 900 990 1287 1683 126 S1W0-5050308012-00000000-PS001 2700 900 950 1235 1615 121 S1W0-5050278012-00000000-PS001 80 Note : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is 2.0 on CRI measurements. Rev2.3, April.26.2019 3 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Performance Characteristics Table 3. Absolute Maximum Ratings Value Parameter Symbol Unit Min. Typ. Max. Forward Current [1] IF - 0.7 1.5 A Power Dissipation PD - - 18 W Junction Temperature Tj - - 145 ºC Storage Temperature Tstg - 40 - 125 ºC Viewing angle θ 125 Forward voltage (700mA, 85℃) VF 11.0 11.5 V Thermal resistance (J to S) [2] RθJ-S 0.8[3] - K/W - ESD Sensitivity(HBM) degree Class 2 JEDEC JS-001-2017 Note : (1) At Junction Temperature 85℃ condition. (2) RθJ-S is tested at 700mA. (3) Using Metal PCB (Normal type). • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. Rev2.3, April.26.2019 4 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Characteristics Graph Color Spectrum Cool White Neutral White Warm White Relative Radiant Power [%] 100 80 60 40 20 0 350 400 450 500 550 600 650 700 750 800 Wavelength [nm] (Fig 1) Typical Spatial Distribution 110 Relative Luminous Intensity [%] 100 90 80 70 60 50 40 30 20 10 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Angular Displacement [degrees] (Fig 2) Rev2.3, April.26.2019 5 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Characteristics Graph Forward Voltage vs. Forward Current, Tj=85℃ Forward Current [A] 1.5 1.0 0.5 0.0 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 Forward Voltage [V] (Fig 3) Forward Current vs. Relative Luminous Flux, T j=85℃ 180 Relative Luminous Flux [%] 160 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Current [A] (Fig 4) Rev2.3, April.26.2019 6 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Characteristics Graph Forward Current vs. CIE X, Y Shift, Tj=85℃ 0.03  CIE X CIE Y 0.02 0.01 0.00 -0.01 -0.02 -0.03 -0.04 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Current [A] (Fig 5) Junction Temp. vs. CIE X, Y Shift, IF=700mA 0.008  CIE X CIE Y 0.006 0.004 0.002 0.000 -0.002 -0.004 -0.006 -0.008 25 50 75 100 125 150 o Junction Temperature [ C] (Fig 6) Rev2.3, April.26.2019 7 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Characteristics Graph Junction Temp. vs. Relative Luminous Flux, IF=700mA 120 Relative luminous flux [%] 100 80 60 40 20 0 25 50 75 100 125 150 125 150 o Junction Temperature [ C] (Fig 7) Junction Temp. vs. Relative Forward Voltage, IF=700mA 0.6 0.5 0.4 0.3  VF 0.2 0.1 0.0 -0.1 -0.2 -0.3 25 50 75 100 o Junction Temperature [ C] (Fig 8) Rev2.3, April.26.2019 8 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Characteristics Graph Ambient Temp. vs. Maximum Forward Current, Tj(max.)=145℃, IF=1.5A 1600 Maximum Current [mA] Rth(j-a)=2℃/W 1400 Rth(j-a)=4℃/W 1200 Rth(j-a)=6℃/W Rth(j-a)=8℃/W 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 o Ambient Temperature [ C] (Fig 9) Rev2.3, April.26.2019 9 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Color Bin Structure Table 4. Bin Code description, IF=700mA, Tj=85℃ Color Chromaticity Coordinate Luminous Flux [lm] Part Number S1W05050xx701200000000-PS001 Bin Code Min. Max. H 1290 1380 G 1200 1290 F 1120 1200 E 1040 1120 Typical Forward Voltage [VF] [1] * Bin Code Min. Max. F 10.5 10.8 G 10.8 11.2 H 11.2 11.5 Refer to page. 12~14 Table 5. Luminous Flux rank distribution(CRI70) Available Rank CCT CIE Luminous Flux Rank 6,000 ~ 7,000K A C D E F G H 5,300 – 6,000K B C D E F G H 4,700 ~ 5,300K C C D E F G H 3,700 ~ 4,200K E C D E F G H 3,200 ~ 3,700K F C D E F G H 2,900 ~ 3,200K G C D E F G H 2,600 ~ 2,900K H C D E F G H Notes : (1) Tolerance is 0.06V on forward voltage measurements. Rev2.3, April.26.2019 10 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Color Bin Structure Table 4. Bin Code description, IF=700mA, Tj=85℃ Color Chromaticity Coordinate Luminous Flux [lm] Part Number S1W05050xx801200000000-PS001 Bin Code Min. Max. E 1040 1120 D 970 1040 C 900 970 Typical Forward Voltage [VF] [1] * Bin Code Min. Max. F 10.5 10.8 G 10.8 11.2 H 11.2 11.5 Refer to page. 12~14 Table 5. Luminous Flux rank distribution(CRI80) Available Rank CCT CIE Luminous Flux Rank 3,700 ~ 4,200K E B C D E F G 3,200 ~ 3,700K F B C D E F G 2,900 ~ 3,200K G B C D E F G 2,600 ~ 2,900K H B C D E F G Notes : (1) Tolerance is 0.06V on forward voltage measurements. Rev2.3, April.26.2019 11 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Color Bin Structure CIE Chromaticity Diagram, Tj=85℃, IF=700mA 0.38 5000K CB 5C 0.36 CA 5700K 4C BB 5B 6500K 4B AB 0.34 4A CD C BC 5A AA CC BA BD B AC 0.32 A AD 0.30 0.30 0.32 0.34 0.36 6500K 4Step 4A Center point 0.3123 : 0.3282 Major Axis a 0.0088 Minor Axis b 0.0036 Ellipse 58 Rotation Angle 5700K 4Step 4B Center point 0.3287 : 0.3417 Major Axis a 0.0095 Minor Axis b 0.0040 Ellipse 59 Rotation Angle 5000K 4Step 4C Center point 0.3447 : 0.3553 Major Axis a 0.0108 Minor Axis b 0.0047 Ellipse 60 Rotation Angle 6500K 5Step 5A Center point 0.3123 : 0.3282 Major Axis a 0.0110 Minor Axis b 0.0045 Ellipse 58 Rotation Angle 5700K 5Step 5B Center point 0.3287 : 0.3417 Major Axis a 0.0118 Minor Axis b 0.0050 Ellipse 59 Rotation Angle 5000K 5Step 5C Center point 0.3447 : 0.3553 Major Axis a 0.0135 Minor Axis b 0.0058 Ellipse 60 Rotation Angle AA CIE X 0.3028 0.3048 0.3131 0.3115 AB CIE Y 0.3304 0.3209 0.329 0.3393 CIE X 0.3115 0.3131 0.3213 0.3205 CIE Y 0.3462 0.3353 0.3423 0.3539 CIE X 0.3292 0.3293 0.3371 0.3376 CA CIE X CIE Y 0.3376 0.3616 0.3371 0.3493 0.3452 0.3558 0.3463 0.3687 Rev2.3, April.26.2019 CIE X 0.3463 0.3452 0.3533 0.3551 BA CIE X 0.3207 0.3215 0.3293 0.3292 AC CIE Y 0.3393 0.329 0.3371 0.3481 CIE X 0.3131 0.3146 0.3221 0.3213 CIE Y 0.3539 0.3423 0.3493 0.3616 CIE X 0.3293 0.3294 0.3366 0.3371 CIE Y 0.3687 0.3558 0.3624 0.376 CIE X 0.3452 0.344 0.3514 0.3533 BB AD CIE Y 0.329 0.3187 0.3261 0.3371 CIE X 0.3048 0.3068 0.3146 0.3131 CIE Y 0.3423 0.3306 0.3369 0.3493 CIE X 0.3215 0.3222 0.3294 0.3293 CIE Y 0.3558 0.3428 0.3487 0.3624 CD CIE X CIE Y 0.3371 0.3493 0.3366 0.3369 0.344 0.3428 0.3452 0.3558 www.seoulsemicon.com BC CB BD CC 12 CIE Y 0.3209 0.3113 0.3187 0.329 CIE Y 0.3353 0.3243 0.3306 0.3423 Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Color Bin Structure CIE Chromaticity Diagram, Tj=85℃, IF=700mA 4000K 0.40 EB 5E EA 4E 0.38 ED E EC 0.36 0.36 0.38 0.40 4000K 4Step 4E Center point 0.3818 : 0.3797 Major Axis a 0.0125 Minor Axis b 0.0053 Ellipse 53 Rotation Angle 4000K 5Step 5E Center point 0.3818 : 0.3797 Major Axis a 0.0157 Minor Axis b 0.0067 Ellipse 53 Rotation Angle EA EB EC ED CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3736 0.3874 0.3871 0.3959 0.3828 0.3803 0.3703 0.3726 0.3703 0.3726 0.3828 0.3803 0.3784 0.3647 0.367 0.3578 0.3828 0.3803 0.3952 0.388 0.3898 0.3716 0.3784 0.3647 0.3871 0.3959 0.4006 0.4044 0.3952 0.388 0.3828 0.3803 Rev2.3, April.26.2019 13 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Color Bin Structure CIE Chromaticity Diagram, Tj=85℃, IF=700mA 0.44 2700K 0.43 3000K HB HA 0.42 GB 3500K 0.41 5G GA 4H FB 4G 5F 0.40 5H FA HC HD GC 4F 0.39 GD H FC 0.38 G FD F 0.37 0.40 0.42 0.44 0.46 0.48 3500K 4Step 4F Center point 0.4073 : 0.3917 Major Axis a 0.0124 Minor Axis b 0.0055 Ellipse 53 Rotation Angle 3000K 4Step 4G Center point 0.4338 : 0.4030 Major Axis a 0.0113 Minor Axis b 0.0055 Ellipse 53 Rotation Angle 2700K 4Step 4H Center point 0.4578 : 0.4101 Major Axis a 0.0105 Minor Axis b 0.0055 Ellipse 54 Rotation Angle 3500K 5Step 5F Center point 0.4073 : 0.3917 Major Axis a 0.0155 Minor Axis b 0.0068 Ellipse 53 Rotation Angle 3000K 5Step 5G Center point 0.4338 : 0.4030 Major Axis a 0.0142 Minor Axis b 0.0068 Ellipse 53 Rotation Angle 2700K 5Step 5H Center point 0.4578 : 0.4101 Major Axis a 0.0132 Minor Axis b 0.0068 Ellipse 54 Rotation Angle FA CIE X 0.3996 0.3943 0.4082 0.4146 FB CIE Y 0.4015 0.3853 0.392 0.4089 CIE X 0.4146 0.4082 0.4223 0.4299 CIE Y 0.4165 0.399 0.4033 0.4212 CIE X 0.443 0.4345 0.4468 0.4562 CIE Y 0.426 0.4077 0.4104 0.4289 CIE X 0.4687 0.4585 0.4703 0.481 GA CIE X 0.4299 0.4223 0.4345 0.443 CIE X 0.4082 0.4017 0.4147 0.4223 CIE Y 0.4212 0.4033 0.4077 0.426 CIE X 0.4345 0.4259 0.4373 0.4468 CIE Y 0.4289 0.4104 0.4132 0.4319 CIE X 0.4585 0.4483 0.4593 0.4703 GB HA CIE X 0.4562 0.4468 0.4585 0.4687 FC CIE Y 0.4089 0.392 0.399 0.4165 CIE X 0.3943 0.3889 0.4017 0.4082 CIE Y 0.4033 0.3853 0.3893 0.4077 CIE X 0.4223 0.4147 0.4259 0.4345 CIE Y 0.4104 0.3919 0.3944 0.4132 CIE X 0.4468 0.4373 0.4483 0.4585 GC HB Rev2.3, April.26.2019 FD CIE Y 0.392 0.3751 0.3814 0.399 GD HC 14 CIE Y 0.3853 0.369 0.3751 0.392 CIE Y 0.399 0.3814 0.3853 0.4033 HD CIE Y 0.4077 0.3893 0.3919 0.4104 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Mechanical Dimensions SZ8-Y50-XX-XX-XX Anode Cathode < Top > < Bottom > Cathode Anode < Side > < Inner circuit > (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.2mm Rev2.3, April.26.2019 15 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Recommended Solder Pad SZ8-Y50-XX-XX-XX < Solder Pad > < Mask Stencil > (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev2.3, April.26.2019 16 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Material Structure ① ② ③ No. List Material ① Encapsulation Silicone, Phosphor ② Chip Source GaN ON SAPPHIRE ③ Substrate Ceramic (AlN) Rev2.3, April.26.2019 17 www.seoulsemicon.com Product Data Sheet SZ8-Y50-XX-XX-XX - High-power LED Reflow Soldering Characteristics We recommand refl ect rate above 80% on PCB PRS IPC/JEDEC J-STD-020 Profile Feature Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 150 °C 180 °C 80-120 seconds Time maintained above: - Temperature (TL) - Time (tL) 217~220°C 80-100 seconds Peak Temperature (Tp) 250~255℃ Time within 5°C of actual Peak Temperature (tp)2 20-40 seconds Ramp-down Rate 6 °C/second max. Time 25°C to Peak Temperature 8 minutes max. Atmosphere Nitrogen (O2
S1W0-5050308012-00000000-PS001 价格&库存

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