S1W0-5050407006-0000005S-00002

Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Superior high Flux for High Voltage System High-Power LED - 5050 6V Series S1W0-5050xxxx06-00000000-00002 LM-80 RoHS Product Brief Description Features and Benefits • • This White Colored surface-mount LED comes in standard package dimension. Package Size : 5.0x5.0x0.7mm • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • • • • • • High Intensity output and high luminance Designed for high voltage operation SMT solderable RoHS compliant Color coordinate: 2200K-6500K,CRI70 2700K-6500K,CRI80 CRI line up 70& 80 Key Applications • • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability General lighting Architectural lighting LED Bulbs Decorative / Pathway lighting Table 1-1. Product Selection Table Reference Code Color Cool White STW0L8PA Neutral White CRI Nominal CCT Part Number 6500K S1W0-5050657006-00000000-00002 5700K S1W0-5050577006-00000000-00002 5000K S1W0-5050507006-00000000-00002 4000K S1W0-5050407006-00000000-00002 3500K S1W0-5050357006-00000000-00002 3000K S1W0-5050307006-00000000-00002 2700K S1W0-5050277006-00000000-00002 2200K S1W0-5050227006-00000000-00002 Min 70 Warm White Rev3.0, November 7, 2019 1 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Table 1-2. Product Selection Table Reference Code Color Cool White STW8L8PA Neutral White Warm White Rev3.0, November 7, 2019 CRI Nominal CCT Part Number 6500K S1W0-5050658006-00000000-00002 5700K S1W0-5050578006-00000000-00002 5000K S1W0-5050508006-00000000-00002 4000K S1W0-5050408006-00000000-00002 3500K S1W0-5050358006-00000000-00002 3000K S1W0-5050308006-00000000-00002 2700K S1W0-5050278006-00000000-00002 Min 2 80 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Table of Contents Index • Product Brief 1 • Table of Contents 3 • Performance Characteristics 4 • Characteristics Graph 6 • Color Bin Structure 19 • Mechanical Dimensions 25 • Recommended Solder Pad 26 • Reflow Soldering Characteristics 27 • Emitter Tape & Reel Packaging 28 • Product Nomenclature 30 • Handling of Silicone Resin for LEDs 31 • Precaution For Use 32 • Company Information 35 Rev3.0, November 7, 2019 3 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Product Performance & Characterization Guide Table 2. Product Selection Guide, IF = 640mA, Tj = 25ºC, RH30% Min. CRI, Ra[4] Nominal CCT [K] [1] Min. Flux [lm] Typ. Luminous Flux ФV [2,3] [lm] Typ. Luminous Efficacy [lm/W] @640mA @640mA Part Number @640mA 6500 600 667 168 S1W0-5050657006-00000000-00002 5700 650 678 171 S1W0-5050577006-00000000-00002 5000 650 690 174 S1W0-5050507006-00000000-00002 4000 650 700 176 S1W0-5050407006-00000000-00002 3500 600 657 165 S1W0-5050357006-00000000-00002 3000 600 650 164 S1W0-5050307006-00000000-00002 2700 550 634 160 S1W0-5050277006-00000000-00002 2200 500 540 136 S1W0-5050227006-00000000-00002 6500 600 620 156 S1W0-5050658006-00000000-00002 5700 600 630 159 S1W0-5050578006-00000000-00002 5000 600 635 160 S1W0-5050508006-00000000-00002 4000 600 635 160 S1W0-5050408006-00000000-00002 3500 600 615 155 S1W0-5050358006-00000000-00002 3000 550 610 154 S1W0-5050308006-00000000-00002 2700 550 595 150 S1W0-5050278006-00000000-00002 70 80 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is 2.0 on CRI, 0.2 on VF measurements. Rev3.0, November 7, 2019 4 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Product Performance & Characterization Guide Table 3. Characteristics, IF=640mA, Tj=25ºC Value Parameter Symbol Unit Min. Typ. Max. 5.8 - 6.4 V 500 - 750 lm CCT 2,700 - 7,000 K CRI[4] Ra 70 80 - 80 90 - Viewing Angle 2Θ1/2 - 120 - deg. Thermal resistance (J to S)[5] Rθj-s - 2.0 - K/W ESD Sensitivity(HBM) - Forward Voltage Luminous Flux Correlated Color Temperature[3] VF Φv [2] Class 2 JEDEC JS-001-2017 Table 4. Absolute Maximum Ratings Parameter Symbol Value Unit Forward Current IF 800 mA Power Dissipation PD 5.0 W Junction Temperature Tj 125 ºC Operating Temperature Topr -40 ~ + 100 ºC Storage Temperature Tstg -40 ~ + 100 ºC Notes : (1) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (2) ФV is the total luminous flux output as measured with an integrating sphere. (3) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (4) Tolerance is 2.0 on CRI, 0.2 on VF measurements. • Calculated performance values are for reference only. • All measurements were made under the standardized environment of Seoul Semiconductor. Rev3.0, November 7, 2019 5 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 1. Color Spectrum, Tj=25℃, IF=640mA (CRI70) Relative Spectral Power Distribution 1.0 4700~7000K 7000~4700K 2600~3700K 2200K 0.8 0.6 0.4 0.2 0.0 350 400 450 500 550 600 650 700 750 800 Wavelength [nm] Fig 1. Color Spectrum, Tj=25℃, IF=640mA (CRI80) Relative Spectral Power Distribution 1.0 4700~7000K 3700~4700K 2600~3700K 0.8 0.6 0.4 0.2 0.0 350 400 450 500 550 600 650 700 750 800 Wavelength [nm] Rev3.0, November 7, 2019 6 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 2. Radiant pattern, Tj=25℃, IF=640mA Relative Luminous Flux [a.u.] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -90 -75 -60 -45 -30 -15 0 15 30 45 60 75 90 Angle [deg.] Rev3.0, November 7, 2019 7 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj=25℃ Forward Current [IF, mA] 1000 800 600 400 200 0 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 Forward Voltage [VF, V] Fig 4. Forward Current vs. Relative Luminous Flux, Tj=25℃ 1.4 Relative luminous flux [a.u.] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 1000 Forward Current [mA] Rev3.0, November 7, 2019 8 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift , Tj=25℃ (CRI70) (4700K~7000K) 0.375 0.370 80mA CIE Y 0.365 180mA 360mA 0.360 640mA 0.355 800mA 0.350 0.345 0.340 0.341 0.342 0.343 0.344 0.345 0.346 0.347 0.348 CIE X (3700K~4700K) 0.400 0.395 80mA 180mA CIE Y 0.390 360mA 0.385 0.380 640mA 800mA 0.375 0.370 0.382 0.383 0.384 0.385 0.386 0.387 0.388 CIE X Rev3.0, November 7, 2019 9 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift , Tj=25℃ (CRI70) (3700K~2600K) 0.410 0.405 80mA 180mA 360mA CIE Y 0.400 640mA 0.395 800mA 0.390 0.385 0.430 0.432 0.434 0.436 0.438 CIE X (2200K) 0.425 0.420 180mA CIE Y 0.415 80mA 360mA 640mA 0.410 800mA 0.405 0.400 0.496 0.498 0.500 0.502 0.504 CIE X Rev3.0, November 7, 2019 10 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift , Tj=25℃ (CRI80) (4700K~7000K) 0.370 CIE Y 0.365 640mA 0.360 180mA 360mA 80mA 800mA 0.355 0.350 0.346 0.347 0.348 0.349 0.350 0.351 0.352 0.353 CIE X (3700K~4700K) 0.400 0.395 CIE Y 0.390 0.385 640mA 360mA 180mA 80mA 800mA 0.380 0.375 0.388 0.390 0.392 0.394 0.396 CIE X Rev3.0, November 7, 2019 11 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift , Tj=25℃ (CRI80) (3700K~2600K) 0.420 0.415 0.410 CIE Y 640mA 0.405 360mA 180mA 800mA 80mA 0.400 0.395 0.390 0.436 0.438 0.440 0.442 0.444 0.446 0.448 CIE X Rev3.0, November 7, 2019 12 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 6. Relative Light Output vs. Junction Temperature, IF=640mA Relative Light Output [a.u.] 1.1 1.0 0.9 0.8 0.7 20 40 60 80 100 120 140 o Junction Temperature [ C] Fig 7. Relative Forward Voltage vs. Junction Temperature, IF=640mA Relative Forward Voltage [a.u.] 1.1 1.0 0.9 0.8 0.7 20 40 60 80 100 120 140 o Junction Temperature [ C] Rev3.0, November 7, 2019 13 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 8. Junction Temp. vs. CIE X, Y Shift, IF=640mA (CRI70) (4700K~7000K) 0.004 CIE X CIE Y 0.000 -0.004 -0.008 -0.012 -0.016 20 40 60 80 100 120 140 o Junction Temperature [ C] (3700K~4700K) 0.004 CIE X CIE Y 0.000 -0.004 -0.008 -0.012 -0.016 20 40 60 80 100 120 140 o Junction Temperature [ C] Rev3.0, November 7, 2019 14 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 8. Junction Temp. vs. CIE X, Y Shift, IF=640mA (CRI70) (2600K~3700K) 0.004 CIE X CIE Y 0.000 -0.004 -0.008 -0.012 -0.016 20 40 60 80 100 120 140 o Junction Temperature [ C] (2200K) 0.008 CIE X CIE Y 0.004 0.000 -0.004 -0.008 20 40 60 80 100 120 140 o Junction Temperature [ C] Rev3.0, November 7, 2019 15 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 8. Junction Temp. vs. CIE X, Y Shift, IF=640mA (CRI80) (4700K~7000K) 0.004 CIE X CIE Y 0.000 -0.004 -0.008 -0.012 -0.016 20 40 60 80 100 120 140 o Junction Temperature [ C] (3700K~4700K) 0.004 CIE X CIE Y 0.000 -0.004 -0.008 -0.012 -0.016 20 40 60 80 100 120 140 o Junction Temperature [ C] Rev3.0, November 7, 2019 16 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 8. Junction Temp. vs. CIE X, Y Shift, IF=640mA (CRI80) (2600K~3700K) 0.004 CIE X CIE Y 0.000 -0.004 -0.008 -0.012 -0.016 20 40 60 80 100 120 140 o Junction Temperature [ C] Rev3.0, November 7, 2019 17 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Characteristics Graph Fig 9. Maximum Forward Current vs. Ambient Temperature, Tj(max.)=125℃, IF=800mA Forward Current (mA) 1000 800 600 400 Rth j-a = 7K/W Rth j-a = 10K/W Rth j-a = 15K/W 200 0 0 25 50 75 100 125 O Ambient Temperature ( C) Rev3.0, November 7, 2019 18 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Color Bin Structure Table 5. Bin Code description Part Number S1W05050xxxx060000000000002 Luminous Flux (lm) IF=640mA, Tj=25℃ Bin Code Min. Max. V3 500 550 W1 550 600 W2 600 650 W3 650 700 W4 700 750 Forward Voltage (Vf) IF=640mA, Tj=25℃ Color Chromaticity Coordinate IF=640mA, Tj=85℃ Refer to page. 20 ~ 24 CRI Bin Code Min. Max. Y8 5.8 6.0 Z0 6.0 6.2 Z2 6.2 6.4 70 80 Table 6. Luminous Flux & Forward Voltage rank distribution CRI 70 80 CCT CIE Flux Rank VF Rank 7000 ~ 6000K A V3 W1 W2 W3 W4 Y8 Z0 Z2 6000 ~ 5300K B V3 W1 W2 W3 W4 Y8 Z0 Z2 5300 ~ 4700K C V3 W1 W2 W3 W4 Y8 Z0 Z2 4200 ~ 3700K E V3 W1 W2 W3 W4 Y8 Z0 Z2 3700 ~ 3200K F V3 W1 W2 W3 W4 Y8 Z0 Z2 3200 ~ 2900K G V3 W1 W2 W3 W4 Y8 Z0 Z2 2900 ~ 2600K H V3 W1 W2 W3 W4 Y8 Z0 Z2 2600 ~ 2200K K V3 W1 W2 W3 W4 Y8 Z0 Z2 7000 ~ 6000K A V3 W1 W2 W3 W4 Y8 Z0 Z2 6000 ~ 5300K B V3 W1 W2 W3 W4 Y8 Z0 Z2 5300 ~ 4700K C V3 W1 W2 W3 W4 Y8 Z0 Z2 4200 ~ 3700K E V3 W1 W2 W3 W4 Y8 Z0 Z2 3700 ~ 3200K F V3 W1 W2 W3 W4 Y8 Z0 Z2 3200 ~ 2900K G V3 W1 W2 W3 W4 Y8 Z0 Z2 2900 ~ 2600K H V3 W1 W2 W3 W4 Y8 Z0 Z2 Available ranks Not yet available ranks • All measurements were made under the standardized environment of Seoul Semiconductor. Rev3.0, November 7, 2019 19 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Color Bin Structure CIE Chromaticity Diagram Tj=85℃, IF=640mA 0.48 0.46 0.44 2700K 2200K 3000K 0.42 3500K 4000K CIE y 0.40 0.38 5000K 5700K 0.36 6500K 0.34 K C 0.32 0.30 F E G H B 3step ellipse 5step ellipse A 0.28 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 0.52 0.54 CIE x *Notes : • Energy Star binning applied to all 2600~7000K. • Measurement Uncertainty of the Color Coordinates : ± 0.005 Rev3.0, November 7, 2019 20 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj=85℃, IF=640mA 0.38 5000K 5C 0.36 5700K 3C 5B 6500K 3B 0.34 5A 3A 0.32 0.30 0.30 0.32 0.34 0.36 6500K 3Step 5700K 3Step 5000K 3Step 3A Center point 0.3123 : 0.3282 Major Axis a 0.0066 Minor Axis b 0.0027 Ellipse 58 Rotation Angle 3B Center point 0.3287 : 0.3417 Major Axis a 0.0071 Minor Axis b 0.003 Ellipse 59 Rotation Angle 3C Center point 0.3447 : 0.3553 Major Axis a 0.0081 Minor Axis b 0.0035 Ellipse 60 Rotation Angle 6500K 5Step 5700K 5Step 5000K 5Step 5A Center point 0.3123 : 0.3282 Major Axis a 0.0110 Minor Axis b 0.0045 Ellipse 58 Rotation Angle 5B Center point 0.3287 : 0.3417 Major Axis a 0.0118 Minor Axis b 0.0050 Ellipse 59 Rotation Angle 5C Center point 0.3447 : 0.3553 Major Axis a 0.0135 Minor Axis b 0.0058 Ellipse 60 Rotation Angle Rev3.0, November 7, 2019 21 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Color Bin Structure CIE Chromaticity Diagram (Neutral white), Tj=85℃, IF=640mA 4000K 0.40 5E 3E 0.38 0.36 0.34 0.36 0.38 0.40 0.42 4000K 3Step 3E Center point Major Axis a Minor Axis b Ellipse Rotation Angle 0.3818 : 0.3797 0.00940 0.00400 53 4000K 5Step 5E Center point 0.3818 : 0.3797 Major Axis a 0.0157 Minor Axis b 0.0067 Ellipse 53 Rotation Angle Rev3.0, November 7, 2019 22 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj=85℃, IF=640mA 0.44 2700K 3000K 0.42 5H 3500K 5G 3G 5F 0.40 3H 3F 0.38 0.36 0.40 0.42 0.44 0.46 0.48 3500K 3Step 3000K 3Step 2700K 3Step 3F Center point 0.4073 : 0.3917 Major Axis a 0.0093 Minor Axis b 0.0041 Ellipse 53 Rotation Angle 3G Center point 0.4338 : 0.4030 Major Axis a 0.0085 Minor Axis b 0.0041 Ellipse 53 Rotation Angle 3H Center point 0.4578 : 0.4101 Major Axis a 0.0079 Minor Axis b 0.0041 Ellipse 54 Rotation Angle 3500K 5Step 3000K 5Step 2700K 5Step 5F Center point 0.4073 : 0.3917 Major Axis a 0.0155 Minor Axis b 0.0068 Ellipse 53 Rotation Angle 5G Center point 0.4338 : 0.4030 Major Axis a 0.0142 Minor Axis b 0.0068 Ellipse 53 Rotation Angle 5H Center point 0.4578 : 0.4101 Major Axis a 0.0132 Minor Axis b 0.0068 Ellipse 54 Rotation Angle Rev3.0, November 7, 2019 23 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj=85℃, IF=640mA 0.44 2200K 5K 0.42 3K 0.40 0.38 0.46 0.48 0.50 0.52 0.54 2200K 3Step 3K Center point Major Axis a Minor Axis b Ellipse Rotation Angle 0.5018 : 0.4153 0.00863 0.00398 49 2200K 5Step 5K Center point 0.5018 : 0.4153 Major Axis a 0.01438 Minor Axis b 0.00663 Ellipse 49 Rotation Angle Rev3.0, November 7, 2019 24 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Mechanical Dimensions < Top View > < Bottom View > Anode Mark Cathode Cathode Mark < Side view> Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.2mm Rev3.0, November 7, 2019 25 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Recommended Solder Pad Notes : (1) (2) (3) (4) All dimensions are in millimeters. Scale : none Undefined tolerance is ±0.2mm This drawing without tolerances are for reference only. Rev3.0, November 7, 2019 26 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Table 7. Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev3.0, November 7, 2019 27 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Emitter Tape & Reel Packaging Cathode Mark (-) (+) Symbol W T K0 A0 B0 E Dimension (㎜) 12.00 ±0.10 0.30 ±0.30 0.95 ±0.10 5.30 ±0.10 5.30 ±0.10 1.75 ±0.10 Symbol F D0 D1 P0 P1 P2 Dimension (㎜) 5.50 ±0.10 1.60 ±0.10 1.60 ±0.10 4.00 ±0.10 8.00 ±0.10 2.00 ±0.10 Notes : (1) Quantity : 7 inch reel type ( 1,000 pcs / Reel ± 1pcs) (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10º to the carrier tape (4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package. Rev3.0, November 7, 2019 28 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Emitter Tape & Reel Packaging Rev3.0, November 7, 2019 29 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Product Nomenclature Table 8. Part Numbering System Part Number Code Description Part Number Value X1 Company S Seoul Semiconductor X2 Level of Integration 1 Discrete LED X3X4 Technology W0 White General X5X6X7X8 Dimension 5050 5.0x5.0mm X9X10 CCT xx 65: 6500K 57: 5700K 50: 5000K 40: 4000K 35: 3500K 30: 3000K 27: 2700K X11X12 CRI xx CRI70 CRI80 X13X14 Vf 06 X15X16X17 Characteristic code Flux Rank 000 X18X19X20 Characteristic code Vf Rank 000 X21X22 Characteristic code Color Step xx X23X24 Type 00 X25X26X27 Internal code 002 Rev3.0, November 7, 2019 30 3S: 3step ellipse 5S: 5step ellipse www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev3.0, November 7, 2019 31 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use SMT techniques properly when you solder the LED as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing / Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from Seoul Semiconductor. A sealed container with a nitrogen atmosphere should be used for storage. (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. Rev3.0, November 7, 2019 32 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Precaution for Use (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) The slug is electrically isolated. (15) Attaching LEDs, do not use adhesives that outgas organic vapor. (16) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (17) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev3.0, November 7, 2019 33 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev3.0, November 7, 2019 34 www.seoulsemicon.com Product Data Sheet S1W0-5050xxxx06-00000000-00002 -5050Series Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev3.0, November 7, 2019 35 www.seoulsemicon.com