S1W0-5630409003-0000003S-00004

Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Enabling the Best lm/W in Mid Power Range Mid-Power LED - 5630 Series S1W0-5630XX9003-00000000-00004 (Cool, Neutral, Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size: 5.6x3.0x0.65mm • • • Market Standard 5630 Package Size High Color Quality, CRI Min. 90 ANSI & MacAdam 3 Step compliant • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • RoHS compliant • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • Key Applications The package design coupled with careful selection of component materials allow these products to perform with high reliability. • • • Interior lighting General lighting Indoor and outdoor displays • Architectural / Decorative lighting Table 1. Product Selection Table Reference Code Part Number Cool White 5000K S1W0-5630509003-00000000-00004 Neutral White 4000K S1W0-5630409003-00000000-00004 3500K S1W0-5630359003-00000000-00004 3000K S1W0-5630309003-00000000-00004 2700K S1W0-5630279003-00000000-00004 STW9Q14D-E3 Warm White Rev1.0, Oct 16, 2020 CRI Nominal CCT Color Min 1 90 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Table of Contents Index • Product Brief 1 • Table of Contents 2 • Perf ormance Characteristics 3 • Characteristics Graph 5 • Color Bin Structure 12 • Mechanical Dimensions 15 • Recommended Solder Pad 16 • Ref low Soldering Characteristics 17 • Emitter Tape & Reel Packaging 18 • Product Nomenclature 20 • Handling of Silicone Resin for LEDs 21 • Precaution For Use 22 • Company Information 25 Rev1.0, Oct 16, 2020 2 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Performance Characteristics Table 2. Electro Optical Characteristics, I F =65mA, Tj=25ºC, RH30% Min. CRI, Ra[4] 90 Min. Flux [lm] Typ. Luminous Flux Ф V [3] [lm] Typ. Luminous Efficacy [lm/W] @65mA @65mA @65mA 5000 28.7 30.3 167.5 S1W0-563050900300000000-00004 4000 28.4 30.3 167.5 S1W0-563040900300000000-00004 3500 28.1 29.7 164.2 S1W0-563035900300000000-00004 3000 26.6 28.7 159.1 S1W0-563030900300000000-00004 2700 26.6 28.1 155.6 S1W0-563027900300000000-00004 Nominal CCT [K] [1] Part Number Notes : (1) Correlated color temperature is derived from the CIE 1931 chromaticity diagram (2) Seoul Semiconductor maintains a tolerance of 7% on intensity and power measurements The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package (3) The typical luminous flux table is only for reference (4) Solid angle 0.01sr (reference) Rev1.0, Oct 16, 2020 3 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Performance Characteristics Table 3. Characteristics, I F=65mA, Tj= 25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 65 - mA Forward Voltage VF - 2.78 2.80 V CRI [3] Ra 90 - - 2Θ1/2 - 120 - Deg. Rθ J-S - 10 - ℃/W Viewing Angle Thermal resistance (J to S) [4] ESD Sensitivity(HBM) - Class 3A JEDEC JS-001-2017 Table 4. Absolute Maximum Ratings Parameter Symbol Value Unit Forward Current IF 200 mA Power Dissipation PD 0.62 W Junction Temperature Tj 125 ºC Operating Temperature T opr -40 ~ + 85 ºC Storage Temperature T stg -40 ~ + 100 ºC Notes : (1) Seoul Semiconductor maintains a tolerance of 7% on intensity and power measurements (2) Correlated color temperature is derived from the CIE 1931 chromaticity diagram Color coordinate : 0.005, CCT 5% tolerance (3) Tolerance is 2.0 on CRI measurements (4) Thermal resistance is junction to solder (5) IFP conditions with pulse width ≤10ms and duty cycle ≤10% (6) It is recommended to use it in the condition that the reliability is secured within the Max value . • All measurements were made under the standardized environment of Seoul Semiconductor Rev1.0, Oct 16, 2020 4 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Characteristics Graph Fig 1. Color Spectrum, Tj = 25ºC, I F=65mA 2600~3700K 3700~4700K 4700~7000K Relative Emission Intensity 1.0 0.5 0.0 300 400 500 600 700 800 Wavelength [nm] Fig 2. Radiant Pattern, Tj = 25ºC, I F=65mA Relative Intensity (%) 100 80 60 40 20 0 -100 -75 -50 -25 0 25 50 75 100 Angle [Degree] Rev1.0, Oct 16, 2020 5 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj = 25ºC 0.200 0.175 0.150 IF[A] 0.125 0.100 0.075 0.050 0.025 0.000 2.0 2.2 2.4 2.6 2.8 3.0 3.2 VF[V] Fig 4. Forward Current vs. Relative Luminous Intensity, Tj = 25ºC 3.0 Relative Luminous Intensity 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 180 200 Forward Current IF [mA] Rev1.0, Oct 16, 2020 6 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Characteristics Graph Fig 5. Forward Current vs. CIE X,Y Shift, Tj = 25ºC (4200~7000K) 0.352 0.351 CIE Y 40mA 130mA 20mA 65mA 0.350 200mA 150mA 0.349 0.348 0.338 0.339 0.340 0.341 0.342 0.343 CIE X (Fig.5-1) (2600~4200K) 0.400 CIE Y 0.399 130mA 0.398 65mA 20mA 150mA 200mA 0.397 0.396 0.428 0.429 0.430 0.431 CIE X (Fig.5-2) Rev1.0, Oct 16, 2020 7 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Characteristics Graph Fig 6. Junction Temperature vs. Relative Luminous Intensity, I F=65mA Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0.0 30 45 60 75 90 105 120 O Junction temperature Tj( C) Fig 7. Junction Temperature vs. Relative Forward Voltage, I F=65mA Relative Forward Voltage 1.0 0.8 0.6 0.4 0.2 0.0 30 45 60 75 90 105 120 O Junction temperature Tj( C) Rev1.0, Oct 16, 2020 8 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Characteristics Graph Fig 8. Chromaticity Coordinate vs. Junction Temperature, I F=65mA (4200~7000K) 0.380 0.375 25 0.370 CIE Y 40 60 0.365 80 0.360 0.355 0.350 0.348 100 125 0.351 0.354 0.357 0.360 CIE X (Fig.8-1) (2600~4200K) 0.420 0.415 CIE Y 25 40 0.410 60 80 0.405 100 125 0.400 0.395 0.435 0.438 0.441 0.444 0.447 CIE X (Fig.8-2) Rev1.0, Oct 16, 2020 9 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Characteristics Graph Fig 9. Ambient Temperature vs. Maximum Forward Current, Tj_max = 125℃ Forward Current IF [mA] 250 200 150 100 50 0 -40 -20 0 20 40 60 80 100 O Ambient Temperature TA [ C] Rev1.0, Oct 16, 2020 10 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Performance Characteristics Table 5. Bin Code Description, Tj=25℃, IF=65mA Luminous Flux @5000K Part Number S1W05630XX90030000000000004 Bin Code Min. Max. R5 27.1 28.7 S0 28.7 30.3 S5 30.3 31.9 Typical Forward Voltage (V) Color Chromaticity Coordinate Bin Code Min. Max. Y1 2.7 2.8 Y2 2.8 2.9 Refer to Page. 12~14 Available Ranks Table 6. Intensity Rank Distribution CCT CIE 4700 ~ 5300K C R5 S0 S5 3700 ~ 4200K E R5 S0 S5 3200 ~ 3700K F R5 S0 S5 2900 ~ 3200K G R5 S0 S5 2600 ~ 2900K H R5 S0 S5 Rev1.0, Oct 16, 2020 IV Rank 11 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj =25℃, IF =65mA 5000K 3Step 3C Center point 0.3447 : 0.3553 Major Axis a 0.0081 Minor Axis b 0.0035 Ellipse 60 Rotation Angle 5000K 4Step 4C Center point 0.3447 : 0.3553 Major Axis a 0.0108 Minor Axis b 0.0047 Ellipse 60 Rotation Angle CA CIE X 0.3376 0.3371 0.3452 0.3463 CB CIE Y 0.3616 0.3493 0.3558 0.3687 Rev1.0, Oct 16, 2020 CIE X 0.3463 0.3452 0.3533 0.3551 CC CIE Y 0.3687 0.3558 0.3624 0.376 CIE X 0.3452 0.344 0.3514 0.3533 12 CD CIE Y 0.3558 0.3428 0.3487 0.3624 CIE X 0.3371 0.3366 0.344 0.3452 CIE Y 0.3493 0.3369 0.3428 0.3558 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj =25℃, IF =65mA 0.40 4000K EB 4E EA 0.38 3E EC ED E 0.36 0.34 0.36 0.38 0.40 4000K 3Step 3E Center point 0.3818 : 0.3797 Major Axis a 0.0094 Minor Axis b 0.0040 Ellipse 53 Rotation Angle 4000K 4Step 4E Center point 0.3818 : 0.3797 Major Axis a 0.0125 Minor Axis b 0.0053 Ellipse 53 Rotation Angle EA EB EC ED CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3736 0.3874 0.3871 0.3959 0.3828 0.3803 0.3703 0.3726 0.3703 0.3726 0.3828 0.3803 0.3784 0.3647 0.367 0.3578 0.3828 0.3803 0.3952 0.388 0.3898 0.3716 0.3784 0.3647 0.3871 0.3959 0.4006 0.4044 0.3952 0.388 0.3828 0.3803 Rev1.0, Oct 16, 2020 13 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj =25℃, IF =65mA 0.44 2700K 3000K HB HA 0.42 GB 3500K GA 4G 3H FB 3G 4F 0.40 FA HC HD 3F 4H GD GC FC 0.38 FD 0.36 0.40 0.42 0.44 0.46 0.48 3500K 3Step 3 Step Center point 0.4073 : 0.3917 Major Axis a 0.0093 Minor Axis b 0.0041 Ellipse 53 Rotation Angle 3000K 3Step 3 Step Center point 0.4338 : 0.4030 Major Axis a 0.0085 Minor Axis b 0.0041 Ellipse 53 Rotation Angle 2700K 3Step 3 Step Center point 0.4578 : 0.4101 Major Axis a 0.0079 Minor Axis b 0.0041 Ellipse 54 Rotation Angle 3500K 4Step 4 Step Center point 0.4073 : 0.3917 Major Axis a 0.0124 Minor Axis b 0.0055 Ellipse 53 Rotation Angle 3000K 4Step 4 Step Center point 0.4338 : 0.4030 Major Axis a 0.0113 Minor Axis b 0.0055 Ellipse 53 Rotation Angle 2700K 4Step 4 Step Center point 0.4578 : 0.4101 Major Axis a 0.0105 Minor Axis b 0.0055 Ellipse 54 Rotation Angle FA CIE X 0.3996 0.3943 0.4082 0.4146 FB CIE Y 0.4015 0.3853 0.392 0.4089 CIE X 0.4146 0.4082 0.4223 0.4299 CIE Y 0.4165 0.399 0.4033 0.4212 CIE X 0.443 0.4345 0.4468 0.4562 CIE Y 0.426 0.4077 0.4104 0.4289 CIE X 0.4687 0.4585 0.4703 0.481 GA CIE X 0.4299 0.4223 0.4345 0.443 CIE X 0.4082 0.4017 0.4147 0.4223 CIE Y 0.4212 0.4033 0.4077 0.426 CIE X 0.4345 0.4259 0.4373 0.4468 CIE Y 0.4289 0.4104 0.4132 0.4319 CIE X 0.4585 0.4483 0.4593 0.4703 GB HA CIE X 0.4562 0.4468 0.4585 0.4687 FC CIE Y 0.4089 0.392 0.399 0.4165 CIE X 0.3943 0.3889 0.4017 0.4082 CIE Y 0.4033 0.3853 0.3893 0.4077 CIE X 0.4223 0.4147 0.4259 0.4345 CIE Y 0.4104 0.3919 0.3944 0.4132 CIE X 0.4468 0.4373 0.4483 0.4585 GC HB Rev1.0, Oct 16, 2020 FD CIE Y 0.392 0.3751 0.3814 0.399 GD HC 14 CIE Y 0.3853 0.369 0.3751 0.392 CIE Y 0.399 0.3814 0.3853 0.4033 HD CIE Y 0.4077 0.3893 0.3919 0.4104 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Mechanical Dimensions Top View C Bottom View A C A *[1] Slug (Anode) Cathode Mark Side View Circuit Cathode Anode 1 2 ESD Protection Device Notes : (1) All dimensions are in millimeters (2) Scale : Not to scale (3) Undefined tolerance is ± 0.2mm Rev1.0, Oct 16, 2020 15 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters (2) Scale : Not to scale (3) This drawing without tolerances are for reference only (4) Undefined tolerance is ± 0.1mm (5) The appearance and specifications of the product may be changed for improvement without notice Rev1.0, Oct 16, 2020 16 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T s_max to T p) 3°C/second max. 3°C/second max. Preheat - Temperature Min (T s_min) - Temperature Max (T s_max) - Time (T s_min to T s_max) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (T L) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (T p) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution : (1) Reflow soldering is recommended not to be done more than two times If more than 24hr has passed after first soldering, LEDs will be damaged (2) Repairs should not be done after the LEDs have been soldered When repair is unavoidable, suitable tools must be used (3) When soldering, do not put stress on the LEDs during heating (4) After soldering, do not warp the circuit board Rev1.0, Oct 16, 2020 17 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Emitter Tape & Reel Packaging 15.4±1.0 180 13±0.3 60 2 22 13 ( Tole rance: ± 0.2, Unit: mm ) Notes : (1) Quantity : Max 4,500pcs/Reel (2) Cumulative tolerance : Cumulative tolerance/10 pitches to be ± 0.2mm (3) Adhesion strength of cover tape Adhesion strength to be 0.1-0.7N when the cover tape is torn off from the carrier tape at the angle of 10˚ to the carrier tape (4) Package : P/N, manufacturing data code No. and quantity to be indicated on a damp proof package Rev1.0, Oct 16, 2020 18 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box Rev1.0, Oct 16, 2020 19 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Product Nomenclature Table 8. Part Numbering System : X 1X2X3X4X5X6X7X8-X9 Part Number Code Description Part Number Value X1 Company S Seoul Semiconductor X2 Level of Integration 1 Discrete LED X 3X 4 Technology W0 General White X 5X 6 X 7X 8 Dimension 5630 X 9X 10 CCT XX X 11X 12 CRI 90 X 13X 14 Vf 03 X 15X 16X 17 Characteristic code Flux Rank 000 X 18X 19X 20 Characteristic code Vf Rank 000 X 21X 22 Characteristic code Color Step 00 X 23X 24 Type 00 X 25X 26X 27 Internal code 004 Rev1.0, Oct 16, 2020 20 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. This also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev1.0, Oct 16, 2020 21 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant. The recommended storage temperature range is 40℃ and a maximum humidity of RH90%. (2) Use Precaution after Opening the Packaging Use SMT techniques properly when you solder the LED as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 30℃ Humidity : less than RH60% b. If the package has been opened more than 4 week (MSL_2a) or the color of the desiccant changes, components should be dried for 10-24hr at 65± 5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. Rev1.0, Oct 16, 2020 22 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Precaution for Use (10) The appearance and specifications of the product may be modified for improvement without notice. (11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (13) Attaching LEDs, do not use adhesives that outgas organic vapor. (14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (15) Similar to most Solid state devices; LEDs are sensitive to Electro -Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev1.0, Oct 16, 2020 23 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damage may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev1.0, Oct 16, 2020 24 www.seoulsemicon.com Product Data Sheet S1W0-5630XX9003-00000000-00004 – Mid-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through -hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.0, Oct 16, 2020 25 www.seoulsemicon.com