SFAF3L

SPECIFICATION ITEM MODEL CUSTOMER FULL COLOR SIDE VIEW LED SFAF3L Customer Approved by Approved by Approved by / / / Supplier Drawn by Checked by Approved by / / / SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L Contents 1. 2. 3. 4. 5. 6. 7. 8. 9. Features Application Absolute Maximum Ratings Electro-Optical Characteristics Rank of SFAF3L Rank Name Table Reliability Precautions Soldering Prof ile 02 02 03 03 04 05 09 10 11 12 13 14 10. Outline Dimension 11. Reel Packing Structure 12. History SSC-QP-7-03-44(갑) 1 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 1. Features Package: SMT Solderability Dimension : 7.0 × 2.0 × 1.9 (mm) Low Thermal Resistance RoHS Compliant, Lead Free 6-Pin (R, G, B separate) type InGaAlP(Red) / InGaN(Green) / InGaN(Blue) SFAF3L is Very Useful Side View LED in Back Light Unit Application Long Life Time (MTTF*1 : > 15,000HR @ Ta=25℃, If=20(R), 40(G), 20(B) mA) 2. Applications Flat Backlighting (LCD, Display) Monitor, PDA, CNS, Notebook Coupling into Light Guide Panel Illuminations *1 MTTF = Mean Time To Failure. Failure means that Luminous intensity degrades to 50% of initial value. SSC-QP-7-03-44(갑) 2 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L (Ta = 25°C) Value RED 72 30 100 GREEN 204 60 180 5 -40 ~ +85 -40 ~ +100 BLUE 102 30 100 Unit mW mA mA V ° ° 3. Absolute Maximum Ratings Parameter Power Dissipation Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Symbol Pd*1 IF IFM*2 VR Topr Tstg C C *1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. The value for one LED device.(Single color) *2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10 4. Electro-Optical Characteristics Item RED Forward Voltage Reverse Current RED Luminous Intensity *1 (Ta = 25°C) Condition Min 1.8 2.8 2.8 500 2050 170 620 525 455 Typ 50 120 330 310 310 625 535 460 ° Symbol GREEN BLUE Max 2.4 3.6 3.4 Unit V µA VF IR IF = 20 mA IF = 40 mA IF = 20 mA VR IF IF IF IF =5V = 20 mA = 40 mA = 20 mA = 60 mA 700 2500 230 ˚ mcd GREEN BLUE *2 IV 2θ1/2 Viewing Angle Dominant Wavelength RED GREEN BLUE RED Thermal Resistance *3 IF = 20 mA λd IF = 40 mA IF = 20 mA IF = 20 mA IF = 40 mA IF = 20 mA nm GREEN BLUE Rth j-a C/W *1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Thermal resistance from LED junction to the specif ic environment Note : All measurements were made under the standardized environment of Seoul Semiconductor. SSC-QP-7-03-44(갑) 3 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 5. Rank of SFAF3L ▣Luminous Intensity[Iv] IV Rank Name RN RO RP RQ Mix Rank Name N1 N2 N3 N4 N5 N6 O1 O2 O3 O4 O5 O6 RED MIN 500 550 600 650 R N N N N N N O O O O O O MAX 550 600 650 700 G N N O O P P N N O O P P IV Rank Name GN GO GP GREEN MIN 2050 2200 2350 MAX 2200 2350 2500 IV Rank Name BN BO BLUE MIN 170 200 MAX 200 230 B N O N O N O N O N O N O Mix Rank Name P1 P2 P3 P4 P5 P6 Q1 Q2 Q3 Q4 Q5 Q6 R P P P P P P Q Q Q Q Q Q G N N O O P P N N O O P P B N O N O N O N O N O N O ▣Dominant Wavelength[λd] DW Rank Name RA RB RED MIN 620.0 622.5 MAX 622.5 625.0 DW Rank Name GA GB GC GD B A A A A GREEN MIN 525.3 527.5 530.0 532.5 MAX 527.5 530.0 532.5 535.0 Mix Rank Name DW5 DW6 DW7 DW8 DW Rank Name BA BLUE MIN 455.0 MAX 460.0 Mix Rank Name DW1 DW2 DW3 DW4 ▣Forward Voltage DW Rank Name Z R A A A A G A B C D R B B B B G A B C D B A A A A RED MIN 1.8 MAX 2.4 MIN 2.8 GREEN MAX 3.6 MIN 2.8 BLUE MAX 3.4 SSC-QP-7-03-44(갑) 4 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 6. Rank Name Table X1 Max Vf X2 Mix λd X3 Mix Iv Label Name Code Name Label Name Code Name Label Name Code Name Label Name Code Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 ZDW1N1 ZDW1N2 ZDW1N3 ZDW1N4 ZDW1N5 ZDW1N6 ZDW1O1 ZDW1O2 ZDW1O3 ZDW1O4 ZDW1O5 ZDW1O6 ZDW1P1 ZDW1P2 ZDW1P3 ZDW1P4 ZDW1P5 ZDW1P6 ZDW1Q1 ZDW1Q2 ZDW1Q3 ZDW1Q4 ZDW1Q5 ZDW1Q6 ZDW2N1 ZDW2N2 ZDW2N3 ZDW2N4 ZDW2N5 ZDW2N6 ZDW2O1 ZDW2O2 ZDW2O3 ZDW2O4 ZDW2O5 ZDW2O6 ZDW2P1 ZDW2P2 ZDW2P3 ZDW2P4 ZDW2P5 ZDW2P6 ZDW2Q1 ZDW2Q2 ZDW2Q3 ZDW2Q4 ZDW2Q5 ZDW2Q6 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 ZDW3N1 ZDW3N2 ZDW3N3 ZDW3N4 ZDW3N5 ZDW3N6 ZDW3O1 ZDW3O2 ZDW3O3 ZDW3O4 ZDW3O5 ZDW3O6 ZDW3P1 ZDW3P2 ZDW3P3 ZDW3P4 ZDW3P5 ZDW3P6 ZDW3Q1 ZDW3Q2 ZDW3Q3 ZDW3Q4 ZDW3Q5 ZDW3Q6 ZDW4N1 ZDW4N2 ZDW4N3 ZDW4N4 ZDW4N5 ZDW4N6 ZDW4O1 ZDW4O2 ZDW4O3 ZDW4O4 ZDW4O5 ZDW4O6 ZDW4P1 ZDW4P2 ZDW4P3 ZDW4P4 ZDW4P5 ZDW4P6 ZDW4Q1 ZDW4Q2 ZDW4Q3 ZDW4Q4 ZDW4Q5 ZDW4Q6 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 ZDW5N1 ZDW5N2 ZDW5N3 ZDW5N4 ZDW5N5 ZDW5N6 ZDW5O1 ZDW5O2 ZDW5O3 ZDW5O4 ZDW5O5 ZDW5O6 ZDW5P1 ZDW5P2 ZDW5P3 ZDW5P4 ZDW5P5 ZDW5P6 ZDW5Q1 ZDW5Q2 ZDW5Q3 ZDW5Q4 ZDW5Q5 ZDW5Q6 ZDW6N1 ZDW6N2 ZDW6N3 ZDW6N4 ZDW6N5 ZDW6N6 ZDW6O1 ZDW6O2 ZDW6O3 ZDW6O4 ZDW6O5 ZDW6O6 ZDW6P1 ZDW6P2 ZDW6P3 ZDW6P4 ZDW6P5 ZDW6P6 ZDW6Q1 ZDW6Q2 ZDW6Q3 ZDW6Q4 ZDW6Q5 ZDW6Q6 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 ZDW7N1 ZDW7N2 ZDW7N3 ZDW7N4 ZDW7N5 ZDW7N6 ZDW7O1 ZDW7O2 ZDW7O3 ZDW7O4 ZDW7O5 ZDW7O6 ZDW7P1 ZDW7P2 ZDW7P3 ZDW7P4 ZDW7P5 ZDW7P6 ZDW7Q1 ZDW7Q2 ZDW7Q3 ZDW7Q4 ZDW7Q5 ZDW7Q6 ZDW8N1 ZDW8N2 ZDW8N3 ZDW8N4 ZDW8N5 ZDW8N6 ZDW8O1 ZDW8O2 ZDW8O3 ZDW8O4 ZDW8O5 ZDW8O6 ZDW8P1 ZDW8P2 ZDW8P3 ZDW8P4 ZDW8P5 ZDW8P6 ZDW8Q1 ZDW8Q2 ZDW8Q3 ZDW8Q4 ZDW8Q5 ZDW8Q6 SSC-QP-7-03-44(갑) 5 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 7. Characteristic Diagram Forward Current vs. Forward Voltage Intensity vs. Forward Current [Red, Blue ] 100 Ta = 25 C O R elative Lu mi no us In tensity IV / I V (20mA) [Rel. ] Forward Current [mA] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 5 10 15 20 25 30 10 Blue Re d 1 RED GREEN BLUE 2.0 2.5 3.0 3.5 1.5 Forward Voltage [V] Forward Current [mA] Intensity vs. Forward Current [Green ] Intensity vs. Ambient Temperature R elative Lu mi nou s In tensity IV / I V (40mA) [Rel.] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 C) [Rel.] 1.2 1.1 Green o Relative Lumnous In en ity IV / IV (25 i ts 1.0 Green Blue 0.9 Red 0.8 0.7 0.6 10 20 30 40 50 o 60 70 Forward Current [mA] Am ent Temperature ( C) bi SSC-QP-7-03-44(갑) 6 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L Wavelength vs. Forward Current [Red, Blue ] Wavelength vs. Forward Current [Green ] 6 6 Dominant wavelength Sh ift [nm] Domi nant w avelength Shift [ nm] 4 Blue Red 4 Green 2 2 0 0 -2 0 10 20 30 40 -2 0 10 20 30 40 50 60 70 Forward Current [mA] Forward Current [mA ] Spectrum Dominant Wavelength vs. Ambient Temperature Ta = 25 C IF = 20 mA Intensity [%] O 6 Dominant wavelength Shift [nm] Red 4 Blue Green 2 400 500 600 700 0 Wavelength [nm] -2 10 20 30 40 50 o 60 70 Am ient Temperature ( C) b SSC-QP-7-03-44(갑) 7 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L Radiation Diagram 1.0 x axis y axis Ta = 25 C O Intensity 0.5 0.0 -100 -80 -60 -40 -20 0 20 40 60 8 0 10 0 Theta SSC-QP-7-03-44(갑) 8 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 8. Reliability (1) TEST ITEMS AND RESULTS TEST ITEM Life Test High Humidity Heat Life Test Thermal Shock High Temperature Life Test Low Temperature Life Test High Temperature Storage Low Temperature Storage Humidity Heat Storage ESD Test conditions Note 1000 hr 1000 hr 20 cycle 1000 hr 1000 hr 1000 hr 1000 hr 1000 hr 1 time Number of Damaged 0/20 0/20 0/50 0/20 0/20 0/50 0/50 0/20 0/50 MIL-STD 888E Reference EIAJ ED-4701 100 101 EIAJ ED-4701 100 102 EIAJ ED-4701 300 307 EIAJ ED-4701 200 201 EIAJ ED-4701 200 202 Ta = 25°C; IF = 20 mA /chip Ta = 60°C; RH = 90%, IF = 20 mA /chip -30°C ~ 85°C (30 min) (30 min) Ta = 85°C; IF = 15 mA /chip Ta = - 40°C; IF = 20 mA /chip Ta = 100°C Ta = - 40°C Ta = 60°C; RH = 90% Human Body Mode : 1 kV (2) CRITERIA FOR JUDGING THE DAMAGE Item Symbol Test Condition Criteria for Judgment Min. Forward Voltage Reverse Current Luminous Intensity U.S.L. : Upper Standard Level, Max. U.S.L × 1.2 U.S.L × 2.0 - VF IR IV IF = 20 mA/chip VR = 5 V IF = 20 mA/chip L.S.L × 0.7 L.S.L. : Lower Standard Level SSC-QP-7-03-44(갑) 9 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 9. Precautions (1) Storage conditions Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption. a. Keep it at a temperature in the range from 5°C to 30°C and at a humidity of less than 60% RH. In case of being stored for more than 3 months, the product should be sealed with Nitrogen gas. (2) After opening the package When soldering, this could result in a decrease of the photoelectric effect or light intensity. a. Soldering should be done right after mounting the product. b. Keep the temperature in the range from 5°C to 40°C and the humidity at less than 30%. Soldering should be done within 7 days after opening the desiccant package. If the product has been exposed for more than 7 days after opening the package or the indicating color of the desiccator changes, the product must be baked at a temperature between 60°C and 65°C for 10 to 12 hours. An unused and unsealed product should be repacked in a desiccant package and kept sealed in a dry atmosphere. (3) Precautions for use Any external mechanical force or excessive vibration should not be applied to the product during cooling after soldering, and it is preferable to avoid rapid cooling. The product should not be mounted on a distorted part of PCB. Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and surge damage, and all devices and equipments must be grounded to the earth. (4) Miscellaneous Radiation resistance is not considered. When cleaning the product, any kind of fluid such as water, oil and organic solvent must not be used and IPA(Isopropyl Alcohol) must be used. When using the product, operating current should be settled in consideration of the maximum ambient temperature. Its appearance or specif ication for improvement is subject to change without notice. SSC-QP-7-03-44(갑) 10 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 10. Soldering Profile The LED can be soldered in place using the reflow soldering method. (1) Lead solder Preliminary heating to be at maximum 210°C for maximum 2 minutes. Soldering heat to be at maximum 240°C for maximum 10 seconds. 280 Device Surface Temperature [ C] o 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195 Soldering Times [sec] (2) Lead-free solder Preliminary heating to be at maximum 220°C for maximum 2 minutes. Soldering heat to be at maximum 260°C for maximum 10 seconds. 280 Device Surface Temperature [ C] o 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195 Soldering Times [sec] (3) Hand Soldering conditions Not more than 5 seconds @MAX 300°C, under Soldering iron. SSC-QP-7-03-44(갑) 11 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L ( Tolerance : ±0.2, Unit : mm ) 11. Outline Dimension Recommended solder pad 7.00 0.4 1.1 0.3 0.5 1.65 1.0 0.5 0.8 0.8 SSC-QP-7-03-44(갑) 12 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 13. Reel Packing Structure Reel Aluminum Vinyl Bag Desiccant Humidity indicator Barcode Label RANK : QUANTITY : XXXX LOT NUMBER : XXXXXXXX SSC PART NUMBER : XXXXXXXX SEOUL TUV Outer Box Structure XXX 142 (mm) TYPE SIZE (mm) c a b 245 220 142 7inch 245 220 80 MADE IN K OREA SFAF3L Acriche RoHS Semiconductor EcoLight Material : Paper(SW3B(B)) 245 (mm) Lot Number The lot number is composed of the following characters; 220 (mm) SFAF3L ○□□◎◎ ◇◇◇ Symbol Meaning Year Month Day Number Example 8 for 2008, 9 for 2009 ‥‥ 01 for Jan., 02 for Feb., ‥‥ 12 for Dec. 01, 02, 03, 04, 05, ‥‥ 27, 28, 29, 30, 31 001, 002, 003, 004, 005, 006, 007 ‥‥ ○ □□ ◎◎ ◇◇◇ SSC-QP-7-03-44(갑) 13 SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L 13. History Rev. No. 1.00 - The institution of New Spec. Contents Date 2008.06.03 Published by SEOUL SEMICONDUCTOR CO., LTD. http://www.seoulsemicon.com 148-29, Gasan-Dong, Geumcheon-Gu, Seoul, 153-801. South Korea © All Right Reserved. SSC-QP-7-03-44(갑) 14 SEOUL SEMICONDUCTOR CO., LTD.