SMJR-N-1-16

Product Data Sheet SMJR-N-1-XX - NANODRIVER 16W & 24W 120V LED Driver NANODRIVER SMJR-N-1-XX RoHS Product Brief Description Features and Benefits The Seoul Semiconductor NANO DRIVER range of Phase cut drivers are ideal for downlight, spot and track light as well as wall sconce and flush mount fixtures. Based incredibly small package is ideal for very small custom driver design or for creating AC LED Modules. The NANODRIVER has Very low ripple current enabling easy California Title 24 flicker compliance. • • • • • • • Very small size 0.53” x 0.53” x 0.05” Low flicker for Title 24 compliance AC Phase cut dimming or analog dimming Over temperature protection Ultra Low Inrush current >0.9 Power Factor 5V 20mA Auxiliary Bias Supply Product Selection P [W] Part No. Vin [Vac] Remark Min. Max. SMJR-N-1-16 120 8 16 700-1600 Lumens Typ.* SMJR-N-1-24 120 18 24 1600-2500 Lumens Typ.* *Light Output is a for reference guide only. Actual light out will depend on specific LED and BIN selected* Typical Circuit diagram Rev. 3.1, Feb. 02, 2018 1 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Contents Maximum Ratings 3 Block Diagram 4 Functional Description 6 Specification 7 Performance Characteristic 8 Power Dissipation 10 Thermal 11 Operating Circuit 12 LED Array & Component Selection 14 Analog Dimming 22 Phase Cut Dimmer Compatibility 24 Mechanical 25 Recommended Solder Pad 26 Reflow Soldering Profile 27 Marking 28 Emitter Tape & Reel Packaging 29 Packaging 30 Precautions 32 Rev. 3.1, Feb. 02, 2018 2 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Performance Characteristics Absolute Maximum Ratings, Ta = 25ºC Parameter Symbol Unit Lower Limit Upper Limit L,N, LED1, LED2, BLDP, BLDN to GND - V -0.3 450 ADIM, RSET, VAUX, VPS, ISN, RSET,RS1, RS2 to GND - V -0.3 6.5 Continuous Power Dissipation (TA=25°C) 2) P W - 4.33 Operating Case Temperature Tc ºC -40 120 Operating Ambient Temperature Ta ºC -40 70 Storage Ambient Temperature Tstg ºC -40 120 Maximum Junction Temperature Tj ºC - 150 ESD (HBM) 1) - kV - 1.5 Notes : Stress beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the following operational sections of the specifications is not implied. Exposure to absolute maximum rating condition(s) for extended periods may affect device reliability. 1) Human Body Model (HBM) per JESD22-A114 for all pins. 2) Power dissipation is dependent on exact circuit configuration, including input voltage, output power, auxiliary power consumption etc. Expected Power dissipation is provided in detailed power dissipation curves below. Rev. 3.1, Feb. 02, 2018 3 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Block Diagram SMJR-N-1-16 upto 16W with internal bleeder. Pin Name Description 1 L AC Input Live 2 N AC Input Neutral 3 ADIM Analog Dimming (0.45V ~ 3V) 4 ISN Ground 5 VAUX Auxiliary Power Supply Output(5V 20mA) 6 GND Voltage Output (-) 7 RS1 L1 Current Setting 8 RSET Total Current Setting 9 CN Capacitor (-) 10 CP Capacitor (+) 11 LED3 LED (-) 12 LED2 LED middle 13 LED1 LED (+) Rev. 3.1, Feb. 02, 2018 4 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Block Diagram SMJR-N-1-24 16-24W with external bleeder resistor. Pin Name Description 1 L AC Input Live 2 N AC Input Neutral 3 BLDP Bleed Resistor 4 BLDM Bleed Resistor 5 ADIM Analog Dimming (0.45V ~ 3V) 6 ISN Ground 7 VAUX Auxiliary Power Supply Output(5V 20mA) 8 GND Voltage Output (-) 9 RS1 L1 Current Setting 10 RSET Total Current Setting 11 RS2 L1 Current Setting 12 CN Capacitor (-) 13 CP Capacitor (+) 14 LED3 LED (-) 15 LED2 LED middle 16 LED1 LED (+) Rev. 3.1, Feb. 02, 2018 5 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Device Functional Description Topology and Fundamental Operation The NANODRIVER uses a patented Seoul Semiconductor AC Topology using low frequency current steering without the use of magnetic components. During the peaks of the sine wave energy is stored in an electrolytic capacitor. The stored energy is used to power the LEDs during the trough between the peaks to provide an equivalent dc flux to provide very lower measured ripple. The NANODRIVER supports both leading Edge and Trailing edge dimmer compatibility or can be configured for analog dimming such as 0-10V dimming. Bleeding Function The NANODRIVER includes a bleeding functions which enables operation with multiple dimmers. In Analog Dimming Mode, bleeding functions are disabled, and bleeding functions are enabled in TRIAC dimmer mode only. The main functions provide the dimmers with sufficient current to maintain the minimum holding current for various TRIACs and to simulate filament turn on current for some active smart dimmers in common use. A list of tested dimmers is provided below. Thermal Protection The NANODRIVER includes a thermal shutdown function. This protection protects the NANODRIVER from overheating caused by excessive power dissipation. An internal temperature sensor continuously monitors the junction temperature. If junction temperature exceeds about 160°C, the LED current will be reduced to the half of the total current. RSET Open Protection When the RSET voltage exceeds RSET open detection voltage VRSETP(typ. 2V), all LED drivers are disabled. And all LED drivers will resume operation when the RSET voltage falls below VRSETN (typ. 1.5V). There is a typical 0.5V hysteresis for reliable operation. VAUX Short Protection The NANODRIVER has the VAUX short circuit protection. When the VAUX voltage falls below the VCC Foldback ON voltage VFBON (typ. 0.5V), the LED current is reduced abruptly and VAUX current is limited by 4mA. If the abnormal condition is removed and the VCC voltage rises above VAUX Foldback OFF voltage VFBOFF (Typ. 1.0V), the LED current and VCC current is re-established. There is a typical 0.5V hysteresis for reliable operation. RH RH resisters is used to increase the Power Factor above 0.9. Not using this resistors and connecting directly will result in a higher efficiency and safe operation R1 R1 is required EMI performance to Class B. Not using this resistors and connecting directly will result in a higher efficiency and safe operation. Rev. 3.1, Feb. 02, 2018 6 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Specification Specification, Ta = 25ºC AC Input Voltage AC 120V Model SMJR-N-1-16 SMJR-N-1-24 MAXIMUM RATED AVERAGE CURRENT 163mA 244mA OPERATING VOLTAGE Low flicker option: Led String 1 =35V, Led String 2 =62V High Efficacy option: Led String 1 =44V, Led String 2 =53V CURRENT ACCURACY ±5% FLICKER Less Than 10% STARTUP TIME 0.9 INRUSH CURRENT(max.) 16W, use 2 680Ω 1W carbon film resister is series. RH RH is a resistor used to increase the Power factor to >0.9 power factor. Without the resistor in sum conditions the power factor will decrease to 0.85. This component is optional and if high power factor above 0.9 is not required then it may be eliminated and connection can be made directly from LED1 to the LED. Flicker Capacitor C1 C1 is used to reduce the current ripple in the output LED strings. Any general purpose Aluminum Electrolytic capacitor may be used. Recommended value for 16W. Rating for 120V is recommended 160V and ripple current rating 1.3 times the current. Note that Aluminum Electrolytic capacitors do have a shelf life and wear out characteristic that causes the capacitance to decrease over time. This is accelerated with high temperature operation. Please consult with vendor for calculating life and recommendations to meet the expected product life.. The value for Rset will need to change to achieve the same light output. Please contact the factory for recommendations. EMI Capacitor C2 This component(250V 4.7nF X7R type) is only required for Class B conducted EMI. It may be omitted if not required. Increasing this component value can increase EMI margin. But this design may exhibit Audible noise due to the piezoelectric effect on the capacitor for using the TRIAC dimmer. For designs above 12W C2 can be removed by with R1(10Ω) resistor included and result is still below EMI class B. Rev. 3.1, Feb. 02, 2018 21 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Analog Dimming Analog Dimming The LED brightness can be adjusted by applying DC voltage to ADIM Pin. When the ADIM DC voltage becomes over 3.0V, the LED brightness is clamped at their maximum flux. When ADIM DC voltage is decreased to 0.4V, LED current becomes off. The voltage has hysteresis to stop flicker and requires the voltage to be raised to 0.45V to turn it back on. LED Current 100% 10% 5% 0.4V Decrease Rev. 3.1, Feb. 02, 2018 3V 0.45V Increase 22 3.5V ADIM Input Voltage[V] Clamping www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Analog Dimming External Resistor Setting – For Example The VADIM voltage is set using a resistive voltage divider from the VDIM_IN to ADIM pin. The recommended R1 resistor at 10kΩ. Calculate the R2 resistor using the following equation. R1 VDIM_IN VADIM C3 R2 R2 = R1 x VADIM VDIM_IN - VADIM Assumptions for the purposes of this example, the following are given as the application requirements: - VDIM_IN : External dimming voltage signals (0V : Min, 10V : Max) - R1 : 10kΩ (Recommended value[1]) - VADIM : 3V (Constant value[2]) R1 x VADIM R2 = 10KΩ x 3V = = 4.3KΩ VDIM_IN - VADIM 10V - 3V Notes : 1) Considering the power consumption of the IC, set the resistance value. 2) When the Adim Pin level is 3V, the LED Flux reaches the 100%. Rev. 3.1, Feb. 02, 2018 23 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Device Functional Description Phase Cut Dimmer Compatibility Brand Model Dimming Op. Dim. type voltage[V] Range[%] Visible Flicker During Dimming At Max Level Min ~ Max At Min Level Uniform Dimming SCL-153P Leading 120 5-96 No No No OK S-600P Leading 120 5-96 No No No OK DVCL-153P Leading 120 5-96 No No No OK CTCL-153P Leading 120 5-96 No No No OK TGCL-153P Leading 120 5-96 No No No OK TBL03 Leading 120 5-99 No No No OK MACL-153M Leading 120 5-96 No No No OK PD-6WCL Leading 120 5-96 No No No OK SELV-300P Trailing 120 10-92 No No No OK MAELV-600 Trailing 120 10-92 No No No OK 6631 Leading 120 5-98 No No No OK 6683 Leading 120 5-99 No No No OK VPE06 Trailing 120 10-92 No No No OK Legrand RHCL453PTCCV6 Leading 120 5-96 No No No OK EED100PRE Leading 120 5-99 No No No OK EED200BRE Leading 120 5-99 No No No OK EED150LRP Leading 120 5-99 No No No OK EED20PRE Leading 120 5-99 No No No OK WDN300F-1 Leading 120 5-99 No No No OK Lutron Leviton IKEA WONDER Notes : 1) The list includes dimmers tested at time of publishing. This table will be updated from time to time as other dimmers are tested Rev. 3.1, Feb. 02, 2018 24 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Mechanical Dimensions Notes : 1) All dimensions and tolerance conform to ASME Y14.5-2009 2) Terminal positions designation per JEP 95. 3) PIN 1 Identifier can be chamfer, INK mark, LASERED mark, Metallized. Rev. 3.1, Feb. 02, 2018 25 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Recommended Solder Pad ⓑ ⓐ ⓒ ⓓ ⓔ Notes : 1) ⓐ~ⓔ : Thermal PAD (Recommended wide copper traces.) 2) ⓐ~ⓑ : Electrical PAD do not connect to other devices(bleeder resistance – max. Power : 2W) 3) ⓒ~ⓔ : Electrical Isolated PAD. Rev. 3.1, Feb. 02, 2018 26 www.seoulsemicon.com Product Data Sheet SMJR-N-1-XX - NANODRIVER Reflow Soldering Characteristics Profile Feature Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 150 °C 180 °C 80-120 seconds Time maintained above: - Temperature (TL) - Time (tL) 217~220°C 80-100 seconds Peak Temperature (Tp) 250~255℃ Time within 5°C of actual Peak Temperature (tp)2 20-40 seconds Ramp-down Rate 6 °C/second max. Time 25°C to Peak Temperature 8 minutes max. Atmosphere Nitrogen (O2