Product Data Sheet
STW8Q14BE – Mid-Power LED
Enabling the best lm/W in Mid Power Range
Mid-Power LED - 5630 Series
STW8Q14BE (Cool, Neutral, Warm)
RoHS
Product Brief
Description
Features and Benefits
•
This White Colored surface-mount LED
comes in standard package dimension.
Package Size: 5.6x3.0x0.9mm
•
It has a substrate made up of a molded
plastic reflector sitting on top of a lead
frame.
•
•
•
•
•
The die is attached within the reflector
cavity and the cavity is encapsulated by
silicone.
•
Market Standard 5630 Package Size
High Color Quality, CRI Min. 80
Wide CCT range 2600~7000K
RoHS compliant
Key Applications
•
•
•
•
The package design coupled with
careful selection of component
materials allow these products to
perform with high reliability.
Interior lighting
General lighting
Indoor and outdoor displays
Architectural / Decorative lighting
Table 1. Product Selection Table
CCT
Part Number
Color
Min.
Typ.
Max.
STW8Q14BE
Cool White
4,700K
5,600K
7,000K
STW8Q14BE
Neutral White
3,700K
4,200K
4,700K
STW8Q14BE
Warm White
2,600K
3,000K
3,700K
Rev2.1, Dec 1, 2015
1
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Table of Contents
Index
•
Product Brief
1
•
Table of Contents
2
•
Performance Characteristics
3
•
Characteristics Graph
5
•
Color Bin Structure
11
•
Mechanical Dimensions
17
•
Material Structure
18
•
Recommended Solder Pad
19
•
Reflow Soldering Characteristics
20
•
Emitter Tape & Reel Packaging
21
•
Product Nomenclature
23
•
Handling of Silicone Resin for LEDs
24
•
Precaution For Use
25
•
Company Information
27
Rev2.1, Dec 1, 2015
2
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Performance Characteristics
Table 2. Electro Optical Characteristics, IF=100mA, Tj=25ºC, RH30%
Part Number
CCT (K) [1]
5600
5000
4500
STW8Q14BE
4000
3500
3000
3500
Luminous Flux [3]
CRI
IV (cd)
ФV (lm)
Ra
RANK
Typ.
6500
Luminous Intensity [2]
Min
Max
Min
Max
Min.
U0
11.0
11.7
34.1
36.3
80
U7
11.7
12.5
36.3
38.8
80
V5
12.5
13.5
38.8
41.9
80
W5
13.5
14.5
41.9
45.0
80
U0
11.0
11.7
34.1
36.3
80
U7
11.7
12.5
36.3
38.8
80
V5
12.5
13.5
38.8
41.9
80
W5
13.5
14.5
41.9
45.0
80
U0
11.0
11.7
34.1
36.3
80
U7
11.7
12.5
36.3
38.8
80
V5
12.5
13.5
38.8
41.9
80
W5
13.5
14.5
41.9
45.0
80
U0
11.0
11.7
33.6
35.7
80
U7
11.7
12.5
35.7
38.1
80
V5
12.5
13.5
38.1
41.2
80
W5
13.5
14.5
41.2
44.2
80
U0
11.0
11.7
33.6
35.7
80
U7
11.7
12.5
35.7
38.1
80
V5
12.5
13.5
38.1
41.2
80
W5
13.5
14.5
41.2
44.2
80
U0
11.0
11.7
33.0
35.1
80
U7
11.7
12.5
35.1
37.5
80
V5
12.5
13.5
37.5
40.5
80
W5
13.5
14.5
40.5
43.5
80
T5
10.5
11.0
31.5
33.0
80
U0
11.0
11.7
33.0
35.1
80
U7
11.7
12.5
35.1
37.5
80
V5
12.5
13.5
37.5
40.5
80
T5
10.5
11.0
31.5
33.0
80
U0
11.0
11.7
33.0
35.1
80
U7
11.7
12.5
35.1
37.5
80
V5
12.5
13.5
37.5
40.5
80
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
(2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
The luminous intensity IV was measured at the peak of the spatial pattern which may not be
aligned with the mechanical axis of the LED package.
(3) The lumen table is only for reference.
Rev2.1, Dec 1, 2015
3
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Performance Characteristics
Table 3. Absolute Maximum Ratings, IF=100mA, Tj= 25ºC, RH30%
Value
Parameter
Symbol
Unit
Min.
Typ.
Max.
Forward Current
IF
-
100
160
mA
Forward Voltage[1]
VF (100mA)
2.9
-
3.4
V
Reverse Voltage
Vr
-
0.9
1.2
V
Luminous Intensity (5,000 K) [1]
Iv (100mA)
-
12.5
(38.8)
-
Iv (100mA)
-
11.7
(35.1)
-
Ra
80
83
90
-
Luminous Intensity (3,000 K) [1]
Color Rendering Index
Viewing Angle
[1]
[2]
2Θ1/2
cd
(lm)
120
Power Dissipation
Pd
-
-
560
mW
Junction Temperature
Tj
-
-
125
ºC
Operating Temperature
Topr
- 40
-
+ 85
ºC
Storage Temperature
Tstg
- 40
-
+ 100
ºC
RθJ-S
-
18
-
℃/W
-
-
-
5000
V
Thermal resistance (J to
S) [3]
ESD Sensitivity(HBM) [4]
Notes :
(1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.005
(2) Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity
(3) Thermal resistance : RthJS (Junction / solder)
(4) A zener diode is included for ESD Protection.
•
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
All measurements were made under the standardized environment of Seoul Semiconductor.
Rev2.1, Dec 1, 2015
4
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Characteristics Graph
Fig 1. Color Spectrum, IF=100mA, Tj = 25ºC, RH30%
2600~3700K
3700~4700K
4700~7000K
Relative Emission Intensity
1.0
0.5
0.0
300
400
500
600
700
800
Wavelength [nm]
Fig 2. Viewing Angle Distribution, IF=100mA
0
1.01.0
30
0.80.8
0.60.6
60
0.40.4
0.20.2
0.00.0
-90
90
-60
0
-30
0.2
0.4
0.6
0.8
Rev2.1, Dec 1, 2015
1.0
5
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Characteristics Graph
Fig 3. Forward Voltage vs. Forward Current , Tj=25ºC
Forward Current(mA)
200
150
100
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward Voltage [V]
Fig 4. Forward Current vs. Relative Luminous Flux, Tj=25ºC
1.6
Relative Luminous Intensity
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
140
160
Forward Current IF [mA]
Rev2.1, Dec 1, 2015
6
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Characteristics Graph
Fig 5. Forward Current vs. CIE X, Y Shift , Tj = 25ºC
(2600K~3200K)
0.368
0.366
y
20mA
60mA
100mA
0.364
150mA
200mA
0.362
0.360
0.336
0.337
0.338
0.339
0.340
0.341
x
Rev2.1, Dec 1, 2015
7
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Characteristics Graph
Fig 6. Relative Light Output vs. Junction Temperature, IF=100mA
Relative Light Output
1.0
0.8
0.6
0.4
0.2
0.0
30
45
60
75
90
105
120
O
Junction temperature Tj( C)
Fig 7. Junction Temperature vs. Relative Forward Voltage, IF=100mA
Relative Forward Voltage
1.0
0.8
0.6
0.4
0.2
0.0
30
45
60
75
90
105
120
O
Junction temperature Tj( C)
Rev2.1, Dec 1, 2015
8
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Characteristics Graph
Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF=100mA
(2600K~3200K)
0.335
0.330
25
0.325
y
45
65
0.320
85
105
0.315
0.310
0.315
0.320
0.325
0.330
x
Rev2.1, Dec 1, 2015
9
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Characteristics Graph
Fig 9. Maximum Forward Current vs. Ambient Temperature
200
180
Forward Current IF[mA]
160
140
o
RthJ-A=100 C/W
120
100
80
60
40
20
0
-40
-20
0
20
40
60
80
100
O
Ambient temperature Ta( C)
Rev2.1, Dec 1, 2015
10
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Color Bin Structure
Table 4. Bin Code description, IF = 100mA
Color
Chromaticity
Coordinate
Luminous Intensity (cd)
Part Number
Bin Code
Min.
Max.
T5
10.5
U0
U7
Typical Forward Voltage (Vf)
Bin Code
Min.
Max.
11.0
Y3
2.9
3.0
11.0
11.7
Z1
3.0
3.1
11.7
12.5
Z2
3.1
3.2
STW8Q14BE
Refer to page.12
V5
12.5
13.5
Z3
3.2
3.3
W5
13.5
14.5
A1
3.3
3.4
X5
14.5
15.2
Table 5. Intensity rank distribution
CCT
CIE
IV Rank
6,000 ~ 7,000K
A
T5
U0
U7
V5
W5
X5
5,300 – 6,000K
B
T5
U0
U7
V5
W5
X5
4,700 ~ 5,300K
C
T5
U0
U7
V5
W5
X5
4,200 ~ 4,700K
D
T5
U0
U7
V5
W5
X5
3,700 ~ 4,200K
E
T5
U0
U7
V5
W5
X5
3,200 ~ 3,700K
F
T5
U0
U7
V5
W5
X5
2,900 ~ 3,200K
G
T5
U0
U7
V5
W5
X5
2,600 ~ 2,900K
H
T5
U0
U7
V5
W5
X5
Available ranks
Not yet available ranks
*Notes :
(1) All measurements were made under the standardized environment of Seoul Semiconductor
In order to ensure availability, single color rank will not be orderable.
Rev2.1, Dec 1, 2015
11
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram, IF=100mA, Tj=25ºC
0.46
2600K
0.44
2900K
2700K
3000K
3200K
0.42
G1
3700K
G0
F1
4000K
0.40
E1
CIE Y
4700K
0.38
5000K
0.36
6000K
0.34
6500K
A1
7000K A0
A2
0.32
A3
D1
D0
5300K
5600K
E0
D3
C1
C0
B1 C2
B0
B3 C4
B2
B5
D2
C3
E2
H2
G3
G2
F0
4200K
4500K
H4
F3
F2
H1
H0
3500K
H3
H5
G5
G4
F5
E3
F4
E5
E4
D5
D4
C5
B4
A5
A4
0.30
0.28
0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50
CIE X
*Notes :
• Energy Star binning applied to all 2600~7000K.
• Measurement Uncertainty of the Color Coordinates : ± 0.005
Rev2.1, Dec 1, 2015
12
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC
0.37
5300K
0.36
5600K
B0
6500K
0.34
CIE Y
B1
6000K
0.35
A1
7000K
A2
0.32
B2
A3
A0
0.33
B3
B5
B4
A5
A4
0.31
0.30
0.300
0.305
0.310
0.315
0.320
0.325
0.330
0.335
0.340
CIE X
A0
A1
A2
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3028
0.3304
0.3115
0.3393
0.3041
0.324
0.3041
0.324
0.3126
0.3324
0.3055
0.3177
0.3126
0.3324
0.3210
0.3408
0.3136
0.3256
0.3115
0.3393
0.3205
0.3481
0.3126
0.3324
A3
A4
A5
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3126
0.3324
0.3055
0.3177
0.3136
0.3256
0.3136
0.3256
0.3068
0.3113
0.3146
0.3187
0.3216
0.3334
0.3146
0.3187
0.3221
0.3261
0.321
0.3408
0.3136
0.3256
0.3216
0.3334
B0
B1
B2
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3207
0.3462
0.3292
0.3539
0.3212
0.3389
0.3212
0.3389
0.3293
0.3461
0.3217
0.3316
0.3293
0.3461
0.3373
0.3534
0.3293
0.3384
0.3292
0.3539
0.3376
0.3616
0.3293
0.3461
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3293
0.3461
0.3217
0.3316
0.3293
0.3384
0.3293
0.3384
0.3222
0.3243
0.3294
0.3306
0.3369
0.3451
0.3294
0.3306
0.3366
0.3369
0.3373
0.3534
0.3293
0.3384
0.3369
0.3451
B3
Rev2.1, Dec 1, 2015
B4
13
B5
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC
4200K
4700K
0.38
D0
5000K
CIE Y
D1
4500K
D3
C1
5300K
D2
C0
0.36
D5
C3
D4
C2
C5
C4
0.34
0.34
0.36
0.38
CIE X
C0
C1
C2
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3376
0.3616
0.3463
0.3687
0.3373
0.3534
0.3373
0.3534
0.3456
0.3601
0.3369
0.3451
0.3456
0.3601
0.3539
0.3669
0.3448
0.3514
0.3463
0.3687
0.3552
0.376
0.3456
0.3601
C3
C4
C5
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3456
0.3601
0.3369
0.3451
0.3448
0.3514
0.3448
0.3514
0.3366
0.3369
0.3440
0.3428
0.3526
0.3578
0.3440
0.3428
0.3514
0.3487
0.3539
0.3669
0.3448
0.3514
0.3526
0.3578
D0
D1
D2
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3548
0.3736
0.3641
0.3804
0.3536
0.3646
0.3536
0.3646
0.3625
0.3711
0.3523
0.3555
0.3625
0.3711
0.3714
0.3775
0.3608
0.3616
0.3641
0.3804
0.3736
0.3874
0.3625
0.3711
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3625
0.3711
0.3523
0.3555
0.3608
0.3616
0.3608
0.3616
0.3511
0.3465
0.359
0.3521
0.3692
0.3677
0.359
0.3521
0.367
0.3578
0.3714
0.3775
0.3608
0.3616
0.3692
0.3677
D3
Rev2.1, Dec 1, 2015
D4
14
D5
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC
0.42
3200K
3500K
3700K
0.40
4000K
F0
F3
E1
4200K
CIE Y
F1
E0
F2
F5
E3
0.38
F4
E2
E5
E4
0.36
0.36
0.37
0.38
0.39
0.40
0.41
0.42
0.43
CIE X
E0
E1
E2
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3736
0.3874
0.3869
0.3958
0.3714
0.3775
0.3714
0.3775
0.3842
0.3855
0.3692
0.3677
0.3842
0.3855
0.397
0.3935
0.3813
0.3751
0.3869
0.3958
0.4006
0.4044
0.3842
0.3855
E3
E4
E5
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3842
0.3855
0.3692
0.3677
0.3813
0.3751
0.3813
0.3751
0.367
0.3578
0.3783
0.3646
0.3934
0.3825
0.3783
0.3646
0.3898
0.3716
0.397
0.3935
0.3813
0.3751
0.3934
0.3825
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3996
0.4015
0.4146
0.4089
0.396
0.3907
0.396
0.3907
0.4104
0.3978
0.3925
0.3798
0.4104
0.3978
0.4248
0.4048
0.4062
0.3865
0.4146
0.4089
0.4299
0.4165
0.4104
0.3978
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4104
0.3978
0.3925
0.3798
0.4062
0.3865
0.4062
0.3865
0.3889
0.369
0.4017
0.3751
0.4198
0.3931
0.4017
0.3751
0.4147
0.3814
0.4248
0.4048
0.4062
0.3865
0.4198
0.3931
F0
F1
F3
Rev2.1, Dec 1, 2015
F2
F4
15
F5
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC
0.44
2500K
2700K
2900K
3000K
0.42
H1
H0
3200K
G1
CIE Y
G0
H3
H2
G3
G2
0.40
H5
H4
G5
G4
0.38
0.42
0.44
0.46
0.48
CIE X
G0
G1
G2
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4299
0.4165
0.443
0.4212
0.4248
0.4048
0.4248
0.4048
0.4374
0.4093
0.4198
0.3931
0.4374
0.4093
0.4499
0.4138
0.4317
0.3973
0.443
0.4212
0.4562
0.426
0.4374
0.4093
G3
G4
G5
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4374
0.4093
0.4198
0.3931
0.4317
0.3973
0.4317
0.3973
0.4147
0.3814
0.4259
0.3853
0.4436
0.4015
0.4259
0.3853
0.4373
0.3893
0.4499
0.4138
0.4317
0.3973
0.4436
0.4015
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4562
0.426
0.4687
0.4289
0.4499
0.4138
0.4499
0.4138
0.462
0.4166
0.4436
0.4015
0.462
0.4166
0.474
0.4194
0.4551
0.4042
0.4687
0.4289
0.481
0.4319
0.462
0.4166
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.462
0.4166
0.4436
0.4015
0.4551
0.4042
0.4551
0.4042
0.4373
0.3893
0.4483
0.3919
0.4666
0.4069
0.4483
0.3919
0.4593
0.3944
0.474
0.4194
0.4551
0.4042
0.4666
0.4069
H0
H1
H3
Rev2.1, Dec 1, 2015
H2
H4
16
H5
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Mechanical Dimensions
Top View
Bottom View
*[1]
Cathode Mark
1.9±0.1
A
C
N.C
0.95±0.15
3.00
N.C
5.60
Slug
0.20
Side View
Circuit
Cathode
Anode
1
2
0.90
ESD Protection Device
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.1mm
(4) The LED package has two Cathode Marks.
Rev2.1, Dec 1, 2015
*[1]
17
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Material Structure
Parts No.
Name
Description
Materials
①
LEAD FRAME
Metal
Copper Alloy
(Silver Plated)
②
Chip Source
Blue LED
GaN on Sapphire
③
Wire
Metal
Gold Wire
④
Encapsulation
Silicone
+Phosphor
⑤
Body
Thermo Plastic
Heat-resistant Polymer
⑥
Zener Diode
Si
-
Rev2.1, Dec 1, 2015
18
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Recommended Solder Pad
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) This drawing without tolerances are for reference only.
(4) Undefined tolerance is ±0.1mm.
Rev2.1, Dec 1, 2015
19
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Reflow Soldering Characteristics
IPC/JEDEC J-STD-020
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (Tsmax to Tp)
3° C/second max.
3° C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak Temperature (Tp)
215℃
260℃
Time within 5°C of actual Peak
Temperature (tp)2
10-30 seconds
20-40 seconds
Ramp-down Rate
6 °C/second max.
6 °C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.
Rev2.1, Dec 1, 2015
20
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Emitter Tape & Reel Packaging
15.4±1.0
180
13±0.3
60
2
22
13
( Tolerance: ±0.2, Unit: mm )
(1) Quantity : Max 3,500pcs/Reel
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm
(3) Adhesion Strength of Cover Tape
Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape
at the angle of 10˚ to the carrier tape.
(4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package.
Rev2.1, Dec 1, 2015
21
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Emitter Tape & Reel Packaging
Reel
Aluminum Bag
Outer Box
* Please refer to the next page for the 'Labeling Information' and 'Product Nomenclature'.
Rev2.1, Dec 1, 2015
22
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Product Nomenclature
Table 6. Part Numbering System : X1X2X3X4X5X6X7X8X9
Part Number Code
Description
Part Number
Value
X1
Company
S
X2
Top View LED series
T
X3X4
Color Specification
W8
CRI 80
X5
Package series
Q
Q series
X6X7
Characteristic code
14
X8X9
Revision
BE
Table 7. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17
Lot Number Code
Description
Y1Y2
Year
Y3
Month
Y4Y5
Day
Y6
Top View LED series
Y7Y8Y9Y10
Mass order
Y11Y12Y13Y14Y15Y16Y17
Internal Number
Rev2.1, Dec 1, 2015
Lot Number
23
Value
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) When populating boards in SMT production, there are basically no restrictions regarding the form of
the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector
area.
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions
must be considered during the handling of such devices. Compared to standard encapsulants,
silicone is generally softer, and the surface is more likely to attract dust.
As mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.
(5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used,
it must be assured that these solvents do not dissolve the package or resin.
Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this.
product with acid or sulfur material in sealed space.
Rev2.1, Dec 1, 2015
24
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend store in a dry box with a desiccant .
The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of
RH50%.
(2) Use Precaution after Opening the Packaging
Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may
affect the light output efficiency.
Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing
- Temperature : 5 ~ 30℃ Humidity : less than RH60%
b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant
changes, components should be dried for 10-12hr at 60±5℃
(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.
(4) Do not rapidly cool device after soldering.
(5) Components should not be mounted on warped (non coplanar) portion of PCB.
(6) Radioactive exposure is not considered for the products listed here in.
(7) Gallium arsenide is used in some of the products listed in this publication.
These products are dangerous if they are burned or shredded in the process of disposal.
It is also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed of.
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(9) When the LEDs are in operation the maximum current should be decided after measuring the
package temperature.
(10) The appearance and specifications of the product may be modified for improvement without
notice.
(11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.
(12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy.
The result can be a significant loss of light output from the fixture.
Knowledge of the properties of the materials selected to be used in the construction of fixtures
can help prevent these issues.
(13) Attaching LEDs, do not use adhesives that outgas organic vapor.
(14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF.
If the reverse voltage is applied to LED, migration can be generated resulting in LED damage.
Rev2.1, Dec 1, 2015
25
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Precaution for Use
(15) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS).
Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects
come into contact. While most ESD events are considered harmless, it can be an expensive
problem in many industrial environments during production and storage. The damage from ESD
to an LEDs may cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current Lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following Recommendations are suggested to help minimize the potential for an ESD event:
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic Wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls
- Humidity control (ESD gets worse in a dry environment)
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
Changes to the performance of the LED package (If the damage is around the bond pad area and
since the package is completely encapsulated the package may turn on but flicker show severe
performance degradation.)
Changes to the light output of the luminaire from component failure
Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across
total circuit causing trickle down failures
It is impossible to predict the failure mode of every LED exposed to electrical overstress as the
failure modes have been investigated to vary, but there are some common signs that will indicate
an EOS event has occurred.
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
Rev2.1, Dec 1, 2015
26
www.seoulsemicon.com
Product Data Sheet
STW8Q14BE – Mid-Power LED
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
Rev2.1, Dec 1, 2015
27
www.seoulsemicon.com
工商网监
湘ICP备2023018690号
