SGM2324YTS14

SGM2324 PRODUCT DESCRIPTION The SGM2324 has quad rail-to-rail output voltage feedback amplifiers in one package. It takes the minimum operating supply voltage down to 3V and the maximum recommended supply voltage is 5.5V. SGM2324 is specified over the extended -40°C to +85°C temperature range. The amplifier in SGM2324 provides 1MHz bandwidth; very low input bias currents of 10pA, these features enable SGM2324 to be used for integrators, photodiode amplifiers, and piezoelectric sensors. Rail-to-rail output feature is useful for designers to buffer ASIC in single-supply systems. Applications of SGM2324 include safety monitoring, portable equipment, battery and power supply control, signal conditioning and interfacing for transducers in low power systems. The SGM2324 is offered in SO-16, TSSOP-16, TSSOP-14 and SO-14 packages. 1MHz, Quad, General Purpose CMOS Operational Amplifier FEATURES • Low Cost • Rail-to-Rail Output 1.7mV Typical VOS • Unity Gain Stable • Gain Bandwidth Product: 1MHz • Very Low Input Bias Currents: 10pA • Input Common-Mode Voltage Range Includes Ground • Operates from 3V to 5.5V • Lead (Pb) Free Packages: SO-16, TSSOP-16, SO-14 and TSSOP-14 PIN CONFIGURATIONS (Top View) APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Portable Systems Smoke Detectors Notebook PC PCMCIA Cards Battery–Powered Equipment DSP Interface SG Micro Ltd. Tel: 86/10/51798160/80 www.sg-micro.com REV. B ELECTRICAL CHARACTERISTICS: VS = +5V (At RL = 100KΩ connected to Vs/2, and VOUT = Vs/2, unless otherwise noted) SGM2324 PARAMETER CONDITIONS TYP +25℃ INPUT CHARACTERISTICS Input Offset Voltage (VOS) Input Bias Current (IB) Input Offset Current (IOS) Common-Mode Rejection Ratio(CMRR) Open-Loop Voltage Gain( AOL) Input Offset Voltage Drift (∆VOS/∆T) OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current (IOUT) POWER SUPPLY 3.0 5.5 Power Supply Rejection Ratio (PSRR) Quiescent Current / Amplifier (IQ) DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Slew Rate (SR) Settling Time to 0.1%( tS) Overload Recovery Time Crosstalk G = +1 , 2V Output Step G = +1, 2 V Output Step VIN ·Gain = Vs 1kHz 1MHz NOISE PERFORMANCE Voltage Noise Density (en) f = 1kHz f = 10kHz 42.0 38.0 nV/ nV/ Hz MIN/MAX OVER TEMPERATURE +25℃ -40℃ to +85℃ UNITS MIN / MAX 1.7 10 10 VS = 5V, VCM = - 0.1V to 3.3V RL = 2KΩ ,Vo = 0.1V to 4.9V RL =10KΩ ,Vo = 0.035V to 4.965V 88 100 110 3.5 10 12 mV pA pA MAX TYP TYP MIN MIN MIN TYP 65 85 90 50 80 85 dB dB dB µV/℃ RL = 2KΩ RL = 10KΩ 0.8 0.008 43 28 24 V V mA TYP TYP MIN Operating Voltage Range Vs = +3V to + 5.5V VCM = (-VS) + 0.5V IOUT = 0 80 0.65 3.0 5.5 70 1.3 V V dB mA MIN MAX MIN MAX 75 1.2 1 0.65 9.0 4.0 -80 -65 MHz V/µs µs µs dB dB TYP TYP TYP TYP TYP TYP TYP TYP Hz Specifications subject to changes without notice. 2 SGM2324 PACKAGE/ORDERING INFORMATION MODEL ORDER NUMBER SGM2324YS/TR SGM2324 SGM2324YTS/TR SGM2324YS14/TR SGM2324YTS14/TR PACKAGE DESCRIPTION SO-16 TSSOP-16 SO-14 TSSOP-14 PACKAGE OPTION Tape and Reel, 2500 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 3000 MARKING INFORMATION SGM2324YS SGM2324YTS SGM2324YS14 SGM2324YTS14 ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . . . 6V Storage Temperature Range . . . . . . . . . -65℃ to +150℃ Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 160℃ Operating Temperature Range . . . . . . . . -40℃ to +85℃ Package Thermal Resistance @ TA = 25℃ SO-16, θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82℃/W TSSOP-16, θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 105℃/W Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260℃ ESD Susceptibility HBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V MM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CAUTION This integrated circuit can be damaged by ESD. SG Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 SGM2324 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted. Small-Signal Step Response G = +1 CL = 100pF RL = 100KΩ Large-Signal Step Response G = +1 CL = 100pF RL = 100KΩ 50mV/div 200mV/div 2µs/div 5µs/div Overload Recovery Time 60 Small-Signal Overshoot vs.Load Capacitance 2.5V Small-Signal Overshoot(%) Vs = 5V G = -5 VIN = 500mV 50 40 30 20 10 0 G=-5 RFB=100KΩ 0V 500mV 0V Time(2µs/div) 10 100 1000 Load Capacitance(pF) 10000 On Response vs.Frequency 3 6 5 Output Voltage(Vp-p) Maximum Output Voltage vs.Frequency Maximum Output Voltage Without Slew-Rate Induced Distortion 0 On Response(dB) 4 3 2 1 0 VS = 5V G = -5 RL = 100kΩ CL=100pF 1 10 100 1000 Frequency(kHz) 10000 -3 VS = 5V G = +1 VIN = 0.2VP-P CL=100pF RL = 100kΩ 1 10 100 Frequency(KHz) 1000 10000 -6 -9 4 SGM2324 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted. Input Voltage Noise Spectral Density vs.Frequency 1000 Voltage Noise(nV/ √Hz) CMRR And PSRR vs.Frequency 100 90 80 CMRR,PSRR(dB) 70 60 50 40 30 20 10 0 1 10 100 Frequency(kHz) 1000 10000 10 0.01 PSRR 100 CMRR 0.1 1 Frequency(kHz) 10 100 Quiescent Current vs.Temperature 1.4 1.2 Quiescent Current(mA) 1 0.8 0.6 0.4 0.2 0 -40 -20 0 20 40 Temperature(℃) 60 80 100 -40 -20 Open–Loop Gain(dB) 140 130 120 110 150 Open-Loop Gain vs.Temperature RL = 2k Ω RL = 10kΩ 0 20 40 Temperature(℃) 60 80 PSRR vs.Temperature 110 105 100 PSRR(dB) 95 90 85 80 -40 -25 -10 5 20 35 50 Temperature(℃) 65 80 CMRR vs.Temperature 200 160 120 80 40 0 -40 -25 -10 5 20 35 50 Temperature(℃) 65 80 5 CMRR(dB) SGM2324 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, VS = +5V, and RL = 100KΩ connected to Vs/2, unless otherwise noted. Quiescent And Short-Circuit Current vs.Supply Voltage 1 0.8 0.6 IQ 0.4 0.2 0 2.5 3 3.5 4 4.5 Supply Voltage(V) 5 ISC 40 20 0 5.5 100 80 60 Short-Circuit Current(mA) Quiescent Current(mA) 6 SGM2324 APPLICATION NOTES Driving Capacitive Loads The SGM2324 can directly drive 250pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD. Power-Supply Bypassing and Layout The SGM2324 operates from a single +3V to +5.5V supply or dual ±1.5V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance. VDD VDD 10µF 10µF 0.1µF 0.1µF RISO ¼ SGM2324 VIN CL VOUT Vn Vn ¼ SGM2324 Vp VOUT ¼ SGM2324 Vp 10µF VOUT Figure 1. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 2, It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output, CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. VSS(GND) 0.1µF VSS Figure 3. Amplifier with Bypass Capacitors CF RF RISO ¼ SGM2324 VIN CL RL VOUT Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. 7 SGM2324 Typical Application Circuits Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp – Vn ) × R2 / R1 + Vref. Low Pass Active Filter The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 ) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration. R2 Vn Vp R3 R4 Vref Figure 4. Differential Amplifier C R2 R1 R1 ¼ SGM2324 VOUT VIN ¼ SGM2324 VOUT R3 = R1 // R2 Figure 6. Low Pass Active Filter Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. R2 R1 ¼ SGM2324 Vn ¼ SGM2324 Vp ¼ SGM2324 Vref R3 R4 VOUT Figure 5. Instrumentation Amplifier 8 SGM2324 PACKAGE OUTLINE DIMENSIONS SO-16 D C Symbol A A1 A2 b c D E E1 e L θ E1 E Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 9.800 10.20 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 0° 8° Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.386 0.402 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 0° 8° L θ e A2 A1 b A 9 SGM2324 PACKAGE OUTLINE DIMENSIONS TSSOP-16 A b Symbol E1 E Dimensions In Millimeters Min Max 5.100 4.500 0.300 0.200 6.550 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1° 7° 4.900 4.300 0.190 0.090 6.250 Dimensions In Inches Min Max 0.193 0.169 0.007 0.004 0.246 0.201 0.177 0.012 0.008 0.258 0.043 0.031 0.039 0.001 0.006 0.026 (BSC) 0.020 0.028 0.01(TYP) 1° 7° PIN #1 IDENT. e A2 A C θ D L H A1 A D E b c E1 A A2 A1 e L H θ 10 SGM2324 PACKAGE OUTLINE DIMENSIONS SO-14 D R1 θ1 L2 R L L1 INDEX Φ0.8±0.1 DEP0.2±0.1 Symbol A A1 A2 A3 b b1 c c1 D E E1 e L L1 L2 R R1 h θ θ1 θ2 θ3 θ4 Dimensions In Millimeters MIN NOM MAX 1.35 0.10 1.25 0.55 0.36 0.35 0.16 0.15 8.53 5.80 3.80 0.45 1.60 0.15 1.45 0.65 0.40 1.75 0.25 1.65 0.75 0.49 0.45 0.25 0.25 8.73 6.20 4.00 θ2 E1 E Φ2.0±0.1 BTM E-MARK DEP0.1±0.05 h h e b 0.25 θ BB M θ3 A2 A A3 A1 θ4 b 0.10 0.20 8.63 6.00 3.90 1.27 BSC 0.60 0.80 1.04 REF 0.25 BSC BASE METAL b1 WITH PLATING 0.07 0.07 0.30 0° 6° 6° 5° 5° 0.40 8° 8° 7° 7° 0.50 8° 10° 10° 9° 9° c1 c SECTION B-B 11 SGM2324 PACKAGE OUTLINE DIMENSIONS TSSOP-14 D Symbol A θ2 S Dimensions In Millimeters MIN — 0.05 0.90 0.34 0.20 0.20 0.10 0.10 4.86 6.20 4.30 0.45 NOM — — 1.00 0.44 — 0.22 — 0.13 4.96 6.40 4.40 0.65 BSC 0.60 1.00 REF 0.25 BSC MAX 1.20 0.15 1.05 0.54 0.28 0.24 0.19 0.15 5.06 6.60 4.50 0.75 A1 A2 A3 b b1 c θ3 R1 R B E1 E B L2 INDEX Φ1.0±0.05 0.1-0.1 DEP +0 L L1 θ1 c1 D E E1 #1 PIN e BASE METAL b b1 A3 e L L1 L2 R R1 0.09 0.09 0.20 0° 10° 10° A2 A A1 c1 c — — — — 12° 12° — — — 8° 14° 14° 0.10 SECTION B-B S θ1 θ2 θ3 12 SGM2324 REVISION HISTORY Location 10/2007— Data Sheet REV.A 02/2008— Data Sheet changed from REV. A to REV. B Added SO-14 and TSSOP-14 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1, 3, 11, 12 Page SG Micro Ltd. A2608, NO.72 North Road Xisanhuan, Haidian District, Beijing, China 100037 Tel: 86-10-51798160/80 Fax: 86-10-51798180-803 www.sg-micro.com 13 SGM2324