SGM3158

SGM3158 GENERAL DESCRIPTION The SGM3158 is a dual, bidirectional, single-pole/doublethrow (SPDT) CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. It features high-bandwidth (300MHz) and low ON-resistance (4.5Ω typ), Targeted applications for audio switching. SGM3158 features guaranteed on-resistance matching (0.3Ω max) between switches and guaranteed on-resistance flatness over the signal range (2.3Ω TYP). This ensures excellent linearity and low distortion when switching audio signals. SGM3158 is available in a TDFN-12 package. 4.5Ω Dual SPDT Analog Switch in 12-pin TDFN FEATURES − Voltage Operation : 1. 8 V to 5. 5 V − On-Resistance: 4.5Ω (typ) at 5.0V − Fast Switching Time tON 20 ns tOFF 15 ns − High Bandwidth: 300 MHz − High Off-Isolation: 51dB at 10MHz − Rail-to-Rail Operation − TTL/CMOS Compatible − Break-Before-Make Switching − Extended Industrial Temperature Range: –40°C to 85°C − Lead (Pb) Free TDFN-12 Package APPLICATIONS Portable Instrumentation Battery-Operated Equipment Computer Peripherals Cell Phones PDAs MP3s PIN CONFIGURATIONS（TOP VIEW） SGM3158 COM1 1 12 V+ NC1 2 11 NO1 IN1 GND 3 10 COM2 4 9 V+ NC2 5 8 NO2 IN2 PIN DESCRIPTION NAME NO1, NO2 GND NC1, NC2 COM1, COM2 V+ IN1, IN2 FUNCTION Normally-open terminal ground Normally-closed terminal Common terminal Power supply Digital control pin to connect the COM terminal to the NO or NC terminals GND 6 TDFN-12 7 FUNCTION TABLE LOGIC 0 1 NO OFF ON NC ON OFF Note: NO1 or NO2, NC1 or NC2, and COM1 or COM2 terminal may be an input or output. Switches Shown For Logic “0” Input Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com REV. B ELECTRICAL CHARACTERISTICS (V+ = +2.7V to +3.6V, VIH = +1.4 V, VIL = +0.5V, TA = - 40°C to +85°C, Typical values are at V+ = 3.0V, TA = + 25°C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time VNO, VNC, VCOM RON ∆RON RFLAT(ON) INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) VINH VINL IIN V+ = +3.6V, VIN = 0 or 5.5V VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF, Test Circuit 2; VIH = 1.5V, VIL = 0V VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF, Test Circuit 2; VIH = 1.5V, VIL = 0V VNO1 or VNC1 = VNO2 or VNC2 = 3V, RL = 300Ω, CL = 35pF, Test Circuit 4 RS = 39Ω, CL = 50pF, Test Circuit 5 f = 10MHz RL = 50Ω, CL = 5pF, Signal = 0dBm， f = 1MHz Test Circuit 6 Signal = 0dBm, RL = 50Ω, CL = 5pF, Test Circuit 7 f = 1MHz V+ = 2.7V, VNO or VNC = 1.5V, ICOM = -10 mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1.5V, ICOM = -10 mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1.0V, 1.5V, 2.0V, ICOM = -10 mA, Test Circuit 1 V+ = 3.6V, VNO or VNC = 0.3V, 3.3V, VCOM = 0.3V, 3.3V, V+ = 3.6V, VCOM = 0.3V, 3.3V, VNO or VNC = 0.3V, 3.3V, or floating - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 0 V+ 10 10.5 0.15 0.3 0.4 3 4 7 4.3 1 1 V Ω Ω Ω Ω Ω Ω µA µA SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 1 0.5 1 V V µA tON +25°C 30 ns Turn-Off Time Break-Before-Make Time Delay Skew Off Isolation Bandwidth –3 dB Source OFF Capacitance Channel ON Capacitance POWER REQUIREMENTS Power Supply Range Power Supply Current tOFF tD tSKEW OISO BW +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C - 40°C to +85°C 25 8 2 -51 -72 300 5.5 15.5 ns ns ns dB dB MHz pF pF CNC(OFF), CNO(OFF) CNC(ON), CNO(ON), f = 1MHz CCOM(ON) V+ I+ 1.8 5.5 5 V µA V+ = +5.5V, VIN = 0V or V+ - 40°C to +85°C Specifications subject to change without notice. 2 SGM3158 ELECTRICAL CHARACTERISTICS (V+ = +4.5V to +5.5V, VIH = +2.0 V, VIL = +0.8V, TA = - 40°C to +85°C, Typical values are at V+ = 5.0V, TA = + 25°C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time VNO, VNC, VCOM RON ∆RON RFLAT(ON) INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) VINH VINL IIN V+ = +5.5V, VIN = 0 or 5.5V VNO or VNC = 3.0V, RL = 300Ω, CL = 35pF, Test Circuit 2; VIH = 1.5V, VIL = 0V VNO or VNC = 3.0V, RL = 300Ω, CL = 35pF, Test Circuit 2; VIH = 1.5V, VIL = 0V VNO1 or VNC1 = VNO2 or VNC2 = 3V, RL = 300Ω, CL = 35pF, Test Circuit 4 RS = 39Ω, CL = 50pF, Test Circuit 5 f = 10MHz RL = 50Ω, CL = 5pF, Signal = 0dBm， f = 1MHz Test Circuit 6 Signal = 0dBm, RL = 50Ω, CL = 5pF, Test Circuit 7 f = 1MHz V+ = 4.5V, VNO or VNC = 3.5V, ICOM = -10 mA, Test Circuit 1 V+ = 4.5V, VNO or VNC = 3.5V, ICOM = -10 mA, Test Circuit 1 V+ = 4.5V, VNO or VNC = 1.0V, 2.0V, 3.5V, ICOM = -10 mA, Test Circuit 1 V+ = 5.5V, VNO or VNC = 1.0V, 4.5V, VCOM = 1.0V, 4.5V, V+ = 5.5V, VCOM = 1.0V, 4.5V, VNO or VNC = 1.0V, 4.5V, or floating - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 0 4.5 0.15 2.3 V+ 8 8.5 0.3 0.4 3.3 3.7 1 1 V Ω Ω Ω Ω Ω Ω µA µA SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS 1.5 0.6 1 V V µA tON +25°C 20 ns Turn-Off Time Break-Before-Make Time Delay Skew Off Isolation Bandwidth –3 dB Source OFF Capacitance Channel ON Capacitance POWER REQUIREMENTS Power Supply Range Power Supply Current tOFF tD tSKEW OISO BW +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C - 40°C to +85°C 15 5 5 -51 -72 300 5.5 15.5 ns ns ns dB dB MHz pF pF CNC(OFF), CNO(OFF) CNC(ON), CNO(ON), f = 1MHz CCOM(ON) V+ I+ 1.8 5.5 5 V µA V+ = +5.5V, VIN = 0V or V+ - 40°C to +85°C Specifications subject to change without notice. 3 SGM3158 ORDERING INFORMATION MODEL SGM3158 PINPACKAGE SPECIFIED TEMPERATURE RANGE ORDERING NUMBER SGM3158YD PACKAGE MARKING 3158 PACKAGE OPTION TDFN-12 - 40°C to +85°C Tape and Reel, 3000 ABSOLUTE MAXIMUM RATINGS V+ , IN to GND.............................................................- 0.3V to +6V Analog, Digital voltage range(1)................... - 0.3V to (V+ + 0.3V) Continuous Current NO, NC, or COM..........................±200mA Peak Current NO, NC, or COM......................................±300mA Operating Temperature Range..............................- 40°C to +85°C Junction Temperature...........................................................+150°C Storage Temperature.............................................- 65°C to +150°C Lead Temperature (soldering, 10s).....................................+260°C ESD HBM） （ ...............................................................................2000V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 4 SGM3158 TYPICAL PERFORMANCE CHARACTERISTICS On Response vs.Frequency 3 V+ = +3V TA = +25℃ 0 On Response(dB) On Response(dB) 0 3 V+ = +5V TA = +25℃ On Response vs.Frequency -3 -3 -6 -6 -9 1 10 100 Frequency(MHz) 1000 -9 1 10 100 Frequency(MHz) 1000 Response vs.Frequency 20 0 -20 On Response(dB) -40 -60 -80 -100 -120 -140 0.01 V+ = +3V TA = +25℃ 0.1 1 10 Frequency(MHz) 100 1000 OFF-ISOLATION ON-LOSS On Response(dB) 20 0 -20 -40 -60 -80 -100 -120 -140 0.01 Response vs.Frequency ON-LOSS OFF-ISOLATION V+ = +5V TA = +25℃ 0.1 1 10 Frequency(MHz) 100 1000 5 SGM3158 TEST CIRCUITS 10mA V1 NO or NC VNO or VNC COM RON = V1/10mA Test Circuit 1. On Resistance V+ 0.1µF V+ NO or NC VNO or VNC IN GND COM RL 300Ω VOUT CL 35pF VIN 50% 50% VOUT tON 90% 90% tOFF Test Circuit 2. Switching Times V+ 0.1µF NC VNO or VNC IN NO V+ COM RL 300Ω GND VOUT CL 35pF VIN 0 50% VNO or VNC VOUT tD 90% Test Circuit 3. Break-Before-Make Time Delay, tD 6 SGM3158 TEST CIRCUITS (Cont.) V+ 0.1µF V+ RG VG IN GND VIN NO or NC COM CL 1nF VOUT VOUT VIN ON OFF ΔVOUT ON 0V V+ Test Circuit 4. Charge Injection SGM3158 IN RS NO or NC COM CL IN OUT Rise Time Delay = |tINRISE–tOUTRISE| Fall Time Delay = |tINFALL–tOUTFALL| Rise Time to Fall Time Mismatch = |tOUTFALL–tOUTRISE| tINFALL tINRISE VIN V+ 0V 50% 90% 10% tINFALL 90% 10% tINRISE VOUT V+ 50% 90% 10% 90% 10% 0V tSKEW Test Circuit 5. Output Signal Skew 7 SGM3158 TEST CIRCUITS (Cont.) V+ 0.1µF V+ NO or NC Source Signal IN GND COM CL 5pF VOUT Test Circuit 6. Off Isolation V+ 0.1µF V+ NO or NC Source Signal IN GND COM VOUT CL 5pF Test Circuit 7. Bandwidth 8 SGM3158 PACKAGE OUTLINE DIMENSIONS TDFN-12 3.000±0.050 0.200±0.050 0.500 Bsc Pin 1# Identification Chamfer 0.12× 45° 0.300±0.050 (12×) 2.500 Ref 1.000±0.050 Pin 1# Dot By Marking TOP VIEW BOTTOM VIEW 0.800 ±0.050 0.000-0.050 0.203 Ref SIDE VIEW NOTES: All linear dimensions are in millimeters. 9 SGM3158 REVISION HISTORY Location 05/07— Data Sheet REV.A 10/07— Data Sheet changed from REV.A to REV.B Changes to TYPICAL PERFORMANCE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Page Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com 10 SGM3158