SGM3756
38V High Efficiency, Boost WLED Driver
with PWM Control
GENERAL DESCRIPTION
FEATURES
With a 40V rated integrated switch FET, the SGM3756
• 1:250 Stable Luminance Dimming
is a boost converter that drives LEDs in series. The
• Low EMI by Conducting Ringing Cancelling
boost converter has a 40V, 1.5A internal MOSFET; thus
• Improved PSRR for Waveless Lighting
it can drive single or parallel LED strings for small to
• Input Voltage Range: 2.7V to 5.5V
large size panel backlighting.
• Integrated 40V, 1.5A Current Limit MOSFET
The default white LED current is set with the external
sensor resistor, RSET, and the feedback voltage is
regulated to 200mV, as shown in the typical application.
During the operation, the LED current can be controlled
by using a pulse width modulation (PWM) signal
applied to the CTRL pin, through which the duty cycle
determines the feedback reference voltage. The
SGM3756 does not burst the LED current; therefore, it
does not generate audible noises on the output
capacitor. For maximum protection, the device features
• 38V Open LED Protection for 10 LEDs in Series
• 1.2MHz Switching Frequency
• 200mV Reference Voltage
• PWM Brightness Control
• Under-Voltage Protection
• Up to 90% Efficiency
• Built-in Soft-Start Function
• Thermal Shutdown
• -40℃ to +85℃ Operating Temperature Range
• Available in Green TDFN-2×2-6L Package
integrated open LED protection that disables the
SGM3756 to prevent the output voltage from exceeding
the IC absolute maximum voltage ratings during open
APPLICATIONS
LED conditions.
Smart Phone Backlighting
The SGM3756 is available in Green TDFN-2×2-6L
Tablet Backlighting
package. It operates over an ambient temperature
PDAs, Handheld Computers, GPS Receivers
range of -40℃ to +85℃.
Portable Media Players, Portable TVs
White LED Backlighting for Small and Media Form Factor
Displays
SG Micro Corp
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JULY 2016 – REV. A
38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
PACKAGE/ORDERING INFORMATION
MODEL
PACKAGE
DESCRIPTION
SPECIFIED
TEMPERATURE
RANGE
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
SGM3756
TDFN-2×2-6L
-40℃ to +85℃
SGM3756YTDI6G/TR
3756
XXXX
Tape and Reel, 3000
NOTE: XXXX = Date Code.
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
ABSOLUTE MAXIMUM RATINGS
Voltage on VIN, CTRL, FB ................................... -0.3V to 6V
Package Thermal Resistance
TDFN-2×2-6L, θJA .................................................... 120℃/W
Voltage on SW ................................................... -0.3V to 40V
Junction Temperature ...................................................150℃
Storage Temperature Range ........................ -65℃ to +150℃
Lead Temperature (Soldering, 10sec) ..........................260℃
ESD Susceptibility
HBM ............................................................................. 2000V
MM ................................................................................. 200V
CDM ............................................................................ 1000V
RECOMMENDED OPERATING CONDITIONS
Input Voltage Range ...........................................2.7V to 5.5V
Output Voltage Range ........................................... VIN to 38V
Inductor ........................................................... 4.7μH to 10μH
Input Capacitor ...................................................... 1μF (MIN)
Output Capacitor ................................................. 1μF to 10μF
Operating Temperature Range ....................... -40℃ to +85℃
OVERSTRESS CAUTION
Stresses beyond those listed may cause permanent damage
to the device. Functional operation of the device at these or
any other conditions beyond those indicated in the
operational section of the specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged by ESD if you don’t
pay attention to ESD protection. SGMICRO recommends that
all integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation
procedures can cause damage. ESD damage can range from
subtle performance degradation to complete device failure.
Precision integrated circuits may be more susceptible to
damage because very small parametric changes could cause
the device not to meet its published specifications.
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, specification or other related things if
necessary without notice at any time.
SG Micro Corp
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JULY 2016
2
38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
PIN CONFIGURATION
(TOP VIEW)
FB
1
NC
2
GND
3
GND
6
VIN
5
CTRL
4
SW
TDFN-2×2-6L
PIN DESCRIPTION
PIN
NAME
I/O
FUNCTION
1
FB
I
Feedback Pin for Current. Connect the sense resistor from FB to GND.
2
NC
-
No Connection.
3
GND
O
Ground.
4
SW
I
Drain Connection of The Internal Power FET.
5
CTRL
I
PWM Dimming Signal Input.
6
VIN
I
Input Supply Pin.
NOTE: I: input; O: output.
TYPICAL APPLICATION
L
10μH
VBAT
2.7V to 5.5V
D
CIN
22μF
COUT
1μF
6
5
PWM Dimming
Control
3
SW
VIN
4
10S1P
SGM3756
CTRL
GND
FB
1
RSET
10Ω
Figure 1. Typical Application
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3
38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
ELECTRICAL CHARACTERISTICS
(VIN = 3.6V, CTRL = VIN, CIN = 22μF, Full = -40℃ to +85℃, typical values are at TA = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN
Full
2.7
TYP
MAX
UNIT
5.5
V
POWER SUPPLY
Input Voltage Range
Under-Voltage Lockout Threshold
UVLO Hysteresis
VIN
UVLO
VIN falling
+25℃
2.2
VIN rising
+25℃
2.3
+25℃
100
0.2
VHYS
Operating Quiescent Current into VIN
IQ
VFB = 400mV, no switching
+25℃
Shutdown Current
ISD
CTRL = GND
+25℃
PWM duty cycle 100%
+25℃
193.5
PWM duty cycle 10%
+25℃
18.5
PWM duty cycle 1%
+25℃
1.65
PWM duty cycle 0.2%
+25℃
0.92
Full
0.001
2.5
V
mV
0.35
mA
1
μA
200
205.3
mV
20.3
22.5
mV
2.5
3.25
mV
BOOST CONVERTER
Voltage Feedback Regulation Voltage
FB Pin Bias Current
VREF Filter Time Constant
N-Channel MOSFET On-Resistance
VREF
IFB
VFB = 200mV
tREF
+25℃
0.1
RDS(ON)
+25℃
0.5
mV
0.3
μA
ms
0.8
Ω
Switching Frequency
fSW
Full
0.9
1.2
1.45
MHz
Switching MOSFET Current Limit
ILIM
+25℃
1.15
1.5
1.85
A
VOVP_SW
Full
36
38
39.5
V
VH
Full
1.5
CTRL Logic Low Voltage
VL
Full
CTRL Pin Internal Pull-Down Resistor
RPD
CTRL Logic Low Time to Shutdown
tSD
Output Voltage Over-Voltage Threshold
CONTROL
CTRL Logic High Voltage
PWM Dimming Frequency Range
DFR
Minimum PWM On-Time
Stable Dimming Range
DR
0.4
600
+25℃
CTRL high to low
V
+25℃
2.5
+25℃
10
+25℃
40
+25℃
0.2
V
kΩ
ms
100
kHz
ns
100
%
THERMAL SHUTDOWN
Thermal Shutdown Threshold
TSHUTDOWN
160
℃
Thermal Shutdown Hysteresis
THYS
20
℃
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JULY 2016
4
38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
RECOMMENDED COMPONENTS OF TEST CIRCUITS
COMPONENT
INDUCTOR
10μH/CD75NP-100KC
DIODE
MBR0540
COMPONENT
1μF/C2012X7R1H105KT
CAPACITOR
22μF/C2012X7R1H226KT
TYPICAL PERFORMANCE CHARACTERISTICS
TA = +25℃, L = 10μH, CIN = 22μF, COUT = 1μF, unless otherwise noted.
Open LED Protection
VOUT
ILED
VIN = 3.6V, ILED = 20mA, L = 10μH
fPWM = 50kHz, 10LEDs
Time (200μs/div)
Time (40μs/div)
Switching Waveform
Switching Waveform
VOUT
AC Coupled
VOUT
IL
VIN = 5V, ILED = 350mA, L = 10μH, 3LEDs
Time (2μs/div)
Time (2μs/div)
Start-Up
Start-Up
2V/div 5V/div
2V/div 10V/div
VCTRL
1A/div
VIN = 3.6V, ILED = 20mA, L = 10μH, 8LEDs
200mA/div
IL
VSW
500mV/div
100mV/div
AC Coupled
5V/div
20V/div
VSW
10mA/div
500mA/div
VIN = 3.6V, ILED = 20mA, L = 10μH, 8LEDs
AC Coupled
100mV/div
VOUT
PWM
2V/div
200mV/div 10V/div
VFB
IL
Output Ripple at PWM Dimming
VCTRL
VOUT
VOUT
VIN = 3.6V, ILED = 20mA, L = 10μH, 10LEDs
Time (2ms/div)
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500mA/div
200mA/div
IL
IL
VIN = 5V, ILED = 350mA, L = 10μH, 3LEDs
Time (2ms/div)
JULY 2016
5
38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
TA = +25℃, L = 10μH, CIN = 22μF, COUT = 1μF, unless otherwise noted.
Feedback Voltage vs. PWM Duty Cycle
160
fPWM = 40kHz
120
80
40
fPWM = 40kHz
100
fPWM = 20kHz
10
1
fPWM = 20kHz
0
0.1
0
20
40
60
PWM Duty Cycle (%)
80
100
0.1
Efficiency vs. Output Current
100
VIN = 3.6V, L = 10μH
45
60
6LEDs
Percentage of Drivers (%)
8LEDs
4LEDs
10LEDs
40
20
4LEDs (12.8V), 6LEDs (19.2V)
8LEDs (25.6V), 10LEDs (32V)
5
10
15
20
Output Current (mA)
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100
25
40
35
100 Samples
1 Production Lot
DPWM = 100%
30
DPWM = 1%
DPWM = 0.2%
25
20
DPWM = 10%
15
10
5
0
0
1
10
PWM Duty Cycle (%)
Feedback Voltage Production Distribution
50
80
Efficiency (%)
VIN = 3.6V
VIN = 3.6V
Feedback Voltage (mV)
Feedback Voltage (mV)
Feedback Voltage vs. PWM Duty Cycle
1000
200
30
0
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Normalized Feedback Voltage
JULY 2016
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38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
FUNCTIONAL BLOCK DIAGRAM
L
VBAT
D
VOUT
COUT
CIN
VIN
SW
OVP
UVLO
Current Limit and
Soft Start
tOFF
Generator
tON
PWM
Generator
Gate Driver of
Power MOSFET
GM Amplifier
FB
VREF
RSET
CTRL
PWM Dimming
Reference Control
Shutdown
GND
Figure 2. SGM3756 Block Diagram
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JULY 2016
7
SGM3756
38V High Efficiency, Boost WLED Driver
with PWM Control
DETAILED DESCRIPTION
The SGM3756 is a high efficiency, high output voltage
boost converter in small package size. The device
integrates 40V switch FET and is designed for output
voltage up to 38V with a switch peak current limit of
1.5A. Its large driving capability can drive single or
parallel LED strings for small to large size panel
backlighting.
The SGM3756 operates in a current mode scheme with
quasi-constant frequency. It is internally compensated
for maximum flexibility and stability. The switching
frequency is 1.2MHz, and the minimum input voltage is
2.7V. During the on-time, the current rises into the
inductor. When the current reaches a threshold value
set by the internal GM amplifier, the power switch
MOSFET is turned off. The polarity of the inductor
changes and forward biases the Schottky diode which
lets the current flow towards the output of the boost
converter.
The SGM3756 topology has also the benefits of
providing very good load and line regulations, and
excellent line and load transient responses.
The feedback loop regulates the FB pin to a low
reference voltage (200mV typical), reducing the power
dissipation in the current sense resistor.
Soft Start-Up
Soft-start circuitry is integrated into the IC to avoid high
inrush current spike during start-up. After the device is
enabled, the GM amplifier output voltage ramps up very
slowly, which ensures that the output voltage rises
slowly to ensure the smooth start-up and minimize the
inrush current.
Open LED Protection
Open LED protection circuitry prevents IC damage as
the result of white LED disconnection. The SGM3756
monitors the voltage at the SW pin during each
switching cycle. The circuitry turns off the switch FET
and shuts down the IC when the following condition
persists for 8 switching cycles: the SW voltage exceeds
the VOVP threshold. As the result, the output voltage
falls to the level of the input supply. The device remains
in shutdown mode until it is enabled by toggling the
CTRL pin.
Shutdown
The SGM3756 enters shutdown mode when the CTRL
voltage is logic low for more than 2.5ms. Although the
internal switch FET does not switch in shutdown, there
is still a DC current path between the input and the
LEDs through the inductor and Schottky diode. The
minimum forward voltage of the LED array must exceed
the maximum input voltage to ensure that the LEDs
remain off in shutdown.
Current Program
The FB voltage is regulated by a low 200mV reference
voltage. The LED current is programmed externally
using a current-sense resistor in series with the LED
string(s). The value of the RSET is calculated using
Equation 1:
ILED =
VFB
RSET
(1)
Where:
ILED = total output current of LED string(s)
VFB = regulated voltage of FB pin
RSET = current sense resistor
The output current tolerance depends on the FB
accuracy and the current sensor resistor accuracy.
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38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
DETAILED DESCRIPTION (Continued)
LED Brightness Dimming
The SGM3756 receives PWM dimming signal at CTRL
pin to control the total output current. When the CTRL
pin is constantly high, the FB voltage is regulated to
200mV typically. When the duty cycle of the input PWM
signal is low, the regulation voltage at FB pin is reduced,
and the total output current is reduced; therefore, it
achieves LED brightness dimming. The relationship
between the duty cycle and FB regulation voltage is
given by Equation 2:
VFB = Duty × 200mV + 0.75mV
(2)
Where:
Duty = duty cycle of the PWM signal
200mV = internal reference voltage
0.75mV = most appreciate maximum from production
statistics
Thus, the user can easily control the WLED brightness
by controlling the duty cycle of the PWM signal. The
PWM frequency is in the range from 10kHz to 100kHz,
and the recommended minimum PWM duty cycle is
0.1% for no blind dimming.
As shown in Figure 3, the IC chops up the internal
200mV reference voltage at the duty cycle of the PWM
signal. The pulse signal is then filtered by an internal
low pass filter. The output of the filter is connected to
the GM amplifier as the reference voltage for the FB pin
regulation. Therefore, although a PWM signal is used
for brightness dimming, only the WLED DC current is
modulated, which is often referred as analog dimming.
This eliminates the audible noise which often occurs
when the LED current is pulsed in replica of the
frequency and duty cycle of PWM control. Unlike other
methods which filter the PWM signal for analog
dimming, SGM3756 regulation voltage is independent
of the PWM logic voltage level which often has large
variations.
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VBG
200mV
CTRL
VREF
GM
Amplifer
EA Output
FB
Figure 3. Programmable FB Voltage Using PWM Signal
Under-Voltage Lockout
An under-voltage lockout prevents operation of the
device at input voltages below typical 2.2V. When the
input voltage is below the under-voltage threshold, the
device is shut down, and the internal switch FET is
turned off. If the input voltage rises by under-voltage
lockout hysteresis, the IC restarts.
Thermal Shutdown
If the typical junction temperature of 160 ℃
is
exceeded, an internal thermal shutdown turns off the
device. The device is released from shutdown
automatically when the junction temperature decreases
by 20℃.
Operation with CTRL
The enable rising edge threshold voltage is 1.5V and
the falling edge threshold voltage is 0.4V. With the
CTRL terminal is held below the falling edge threshold
voltage the device is disabled and switching is inhibited.
The IC quiescent current is reduced in this state. When
input voltage is above the UVLO threshold, and the
CTRL terminal voltage is increased above the rising
edge threshold, the device becomes active. Switching
enables and the soft-start sequence initiates.
JULY 2016
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38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
APPLICATION INFORMATION
The SGM3756 device is a step-up DC-DC converter
which can drive single or parallel LED strings for small
to large size panel backlighting.
Design Requirements
For this design example, use the parameters listed in
Table 1 as the input parameters.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input Voltage Range
2.7V to 5.5V
Output, LED Number in A String
10
Output, LED String Number
1
Output, LED Current per String
20mA
Inductor Selection
The selection of the inductor affects power efficiency,
steady state operation as well as transient behavior and
loop stability. These factors make it the most important
component in power regulator design. There are three
important inductor specifications, inductor value, DC
resistance and saturation current. Considering inductor
value alone is not enough. The inductor value
determines the inductor ripple current. Choose an
inductor that can handle the necessary peak current
without saturating. Follow Equation 3 to Equation 4 to
calculate the inductor's peak current. To calculate the
current in the worst case, use the minimum input
voltage, maximum output voltage and maximum load
current of application. In a boost regulator, the input DC
current can be calculated as Equation 3.
IL(DC) =
VOUT × IOUT
(3)
VIN × η
Where:
VOUT = boost output voltage
IOUT = boost output current
VIN = boost input voltage
η = power conversion efficiency
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The inductor current peak-to-peak ripple can be
calculated as Equation 4.
1
∆IL(P −P) =
1
1
+
L×
× fS
−
V
V
V
IN
IN
OUT
(4)
Where:
ΔIL(P-P) = inductor peak-to-peak ripple
L = inductor value
fS = boost switching frequency
VOUT = boost output voltage
VIN = boost input voltage
Therefore, the peak current IL(P) seen by the inductor is
calculated with Equation 5.
=
IL(P) IL(DC) +
DIL(P −P)
2
(5)
Inductor values can have ±20% tolerance with no
current bias. When the inductor current approaches
saturation level, its inductance can decrease 20% to
35% from the 0A value depending on how the inductor
vendor defines saturation current. Using an inductor
with a smaller inductance value forces discontinuous
PWM when the inductor current ramps down to zero
before the end of each switching cycle. This reduces
the boost converter’s maximum output current, causes
large input voltage ripple and reduces efficiency. Large
inductance value provides much more output current
and higher conversion efficiency. For these reasons, a
4.7μH to 10μH inductor value range is recommended,
and 4.7μH inductor is recommended for higher than 5V
input voltage by considering inductor peak current and
loop stability.
Schottky Diode Selection
The SGM3756 demands a low forward voltage,
high-speed and low capacitance Schottky diode for
optimum efficiency. Ensure that the diode average and
peak current rating exceeds the average output current
and peak inductor current. In addition, the diode
reverse breakdown voltage must exceed the open LED
protection voltage. ONSemi NSR0240 is recommended
for the SGM3756.
JULY 2016
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38V High Efficiency, Boost WLED Driver
with PWM Control
SGM3756
APPLICATION INFORMATION (Continued)
The output capacitor is mainly selected to meet the
requirement for the output ripple and loop stability. This
ripple voltage is related to capacitor capacitance and its
equivalent series resistance (ESR). Assuming a
capacitor with zero ESR, the minimum capacitance
needed for a given ripple can be calculated with
Equation 6:
COUT =
( VOUT − VIN ) × IOUT
VOUT × fS × VRIPPLE
(6)
Where:
VRIPPLE = peak-to-peak output ripple
The additional part of the ripple caused by ESR is
calculated using: VRIPPLE_ESR = IOUT × RESR.
Due to its low ESR, VRIPPLE_ESR could be neglected for
ceramic capacitors, a 1μF to 10μF capacitor is
recommended for typical application.
A 1μF output capacitor is suggested for 10/8/6-Series
LED applications. For high output current applications
like 3S8P, larger value output capacitors of 2.2μF is
recommended to minimize the output ripple.
LED Current Set Resistor
The LED current set resistor can be calculated by
Equation 1.
Thermal Considerations
The allowable IC junction temperature should be
considered under normal operating conditions. This
restriction limits the power dissipation of the SGM3756.
The allowable power dissipation for the device can be
determined by Equation 7:
PD =
150℃ − TA
θJA
(7)
Where:
TA is the ambient temperature for the application.
θJA is the thermal resistance junction-to-ambient given
in Power Dissipation Table.
Power Supply Recommendations
The device is designed to operate from an input voltage
supply range between 2.7V and 5.5V. This input supply
must be well regulated. If the input supply is located
more than a few inches from the SGM3756 device,
additional bulk capacitance may be required in addition
to the ceramic bypass capacitors.
EMI Precaution and Ringing Cancelling
Careful layout, routing and selection of decoupling
components are equal keys to successfully putting a
high energy transmission swing boost backlight driver
together with a waveform sensitive communication
transceiver into a condensed case. Engineering test on
cellular phones indicates, with shielding case’s
separation and isolation, that conducting propagation
along with power supply trace contributes the most
comparing with the other EMI mechanisms, the
coupling and the radiation, even being evaluated with
radiation measurement oriented FCC Part 15 Class-B
method. The typical EMI evaluation to narrow band
transmitter is ACLR masking, and TX power limit to
wide band transmitter and RX sensitivity to either
narrow band or wide band, which are powers needed to
obtain given bit error rate.
Ways of conducting EMI suppression include
propagation limit and reduction of energy swings, such
as inserting absorbing ferrite bead in power supply
trace, selecting high self-resonance frequency
decoupling capacitors and ringing cancellation. Figure 4
is a simplified circuit showing that ringing is relaxation
oscillation between diode junction capacitance Cj and
boost inductor L, which injects current swings into
power supply trace; the 2 voltage waveforms illustrate
the difference of circuit performance, with or without
ringing cancellation.
Source Plane
Conducting
Injection Loopback
Output Capacitor Selection
L
Rectifier &
Junction Capacitor
Normal Switching
Waveform
Cj
Decoupling
Loopback
Anti-Ringing
Switching Waveform
Decoupling
Capacitor
Ground Plane
Figure 4. Ringing Cancellation Illustration
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SGM3756
38V High Efficiency, Boost WLED Driver
with PWM Control
APPLICATION INFORMATION (Continued)
Layout Considerations
As for all switching power supplies, especially those
high frequency and high current ones, layout is an
important design step. If layout is not carefully done,
the regulator could suffer from instability as well as
noise problems. Therefore, use wide and short traces
for high current paths. The input capacitor CIN needs to
be close to VIN pin and GND pin in order to reduce the
input ripple seen by the IC. If possible choose higher
capacitance value for it. The SW pin carries high
current with fast rising and falling edge, therefore, the
connection between the SW pin to the inductor should
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be kept as short and wide as possible. The output
capacitor COUT should be put close to VOUT. It is also
beneficial to have the ground of COUT close to the GND
pin since there is large ground return current flowing
between them. FB resistor should be put close to FB
pin. When laying out signal ground, it is recommended
to use short traces separated from power ground traces,
and connect them together at a single point close to the
GND pin.
JULY 2016
12
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-2×2-6L
e
D
N6
D1
L
E1
E
SEE DETAIL A
k
N3
b
N1
BOTTOM VIEW
TOP VIEW
1.40
0.65
A
A1
0.80
A2
SIDE VIEW
2.60
0.24
N1
N2
N1
N2
0.65
RECOMMENDED LAND PATTERN (Unit: mm)
DETAIL A
Pin #1 ID and Tie Bar Mark Options
NOTE: The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Symbol
Dimensions
In Millimeters
MIN
MAX
Dimensions
In Inches
MIN
MAX
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A2
0.203 REF
0.008 REF
D
1.900
2.100
0.075
0.083
D1
1.100
1.450
0.043
0.057
E
1.900
2.100
0.075
0.083
E1
0.600
0.850
0.024
0.034
k
b
0.200 MIN
0.180
e
L
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0.008 MIN
0.300
0.007
0.450
0.010
0.650 TYP
0.250
0.012
0.026 TYP
0.018
TX00055.001
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
W
P0
Q1
Q2
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
Q3
Q4
B0
Reel Diameter
K0
A0
P1
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel
Diameter
Reel Width
W1
(mm)
A0
(mm)
B0
(mm)
K0
(mm)
P0
(mm)
P1
(mm)
P2
(mm)
W
(mm)
Pin1
Quadrant
TDFN-2×2-6L
7″
9.5
2.30
2.30
1.10
4.00
4.00
2.00
8.00
Q1
SG Micro Corp
www.sg-micro.com
TX10000.000
DD0001
Package Type
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Pizza/Carton
7″ (Option)
368
227
224
8
7″
442
410
224
18
SG Micro Corp
www.sg-micro.com
DD0002
Reel Type
TX20000.000
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