SGM5223

SGM5223 GENERAL DESCRIPTION 0.5Ω Ultra Low ON-Resistance, Dual, SPDT Analog Switch FEATURES − Voltage Operation : 1. 8V to 4.2V − Ultra Low On-Resistance: 0.5Ω (TYP) at 4.2V − Fast Switching Time tON 17 ns tOFF 27.5 ns − High Off-Isolation: -58dB at 1MHz − Low Crosstalk: -104dB at 1MHz − Rail-to-Rail input and output Operation − 1.8V logic Compatible control pin − Break-Before-Make Switching − Extended Industrial Temperature Range: –40°C to 85°C − Lead (Pb) Free WQFN-10 Package The SGM5223 is a dual single-pole/double-throw (SPDT) analog switch designed to operate from a single +1.8V to +4.2V power supply. Targeted applications include battery powered equipment that benefit from SGM5223’s low ON-resistance (0.5Ω) and fast switching speeds (tON = 17ns, tOFF = 27.5ns). SGM5223 has excellent on-resistance matching (0.18 Ω max) between switches and guarantees excellent on-resistance flatness over all signal range (0.1Ω TYP). This ensures excellent linearity and low distortion when switching audio signals. The SGM5223 is a committed dual single-pole/double -throw (SPDT) that consist of two normally open (NO) and two normally close (NC) switches. This configuration can be used as a dual 2-to-1 multiplexer. SGM5223 is available in Pb-free WQFN-10 package. PIN CONFIGURATION（TOP VIEW） NO1 2 COM1 IN1 NC1 3 4 5 6 7 NC2 V+ 1 10 9 8 NO2 COM2 IN2 APPLICATIONS Portable Instrumentation Battery-Operated Equipment Computer Peripherals Speaker and Earphone Switching Medical Equipment Audio and Video Switching FUNCTION TABLE LOGIC 0 1 NO OFF ON NC ON OFF GND WQFN-10 Switches Shown For Logic “0” Input Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com REV.A ELECTRICAL CHARACTERISTICS (V+ = +4.2V, GND = 0V, VIH = +1.6V, VIL = +0.6V, TA = - 40°C to + 85°C. Typical values are at V+ = +4.2V, TA = + 25°C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation tON tOFF tD OISO VIH = 3V, VIL= 0V, Test Circuit2 VIH = 3V, VIL= 0V, Test Circuit2 VIH = 3V, VIL= 0V, Test Circuit3 VBIAS = 2.1 V, VIN = 0dBm VIH = 3V, VIL= 0V, Test Circuit4 VBIAS = 2.1 V, VIN = 0dBm VIH = 3V, VIL= 0V, Test Circuit5 100KHz 1MHz 100KHz 1MHz +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C VIN = GND, RS = 0 Ω, CL = 1.0 nF, Q = CL x VOUT, VIH = 3V, VIL= 0V,Test Circuit7 +25°C 17.0 27.5 5.0 -78 -58 -100 -104 55 95 13 ns ns ns dB dB dB dB MHz pF pC VINH VINL IIN V+ = 4.2V, VIN = 0 or 4.2V - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 1.6 0.5 1 V V µA VNO, VNC, VCOM RON ∆RON RFLAT(ON) V+ = 4.2 V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 4.2V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 4.2V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 0.1 0.1 0 0.5 V+ 0.75 0.85 0.11 0.18 0.23 0.22 0.26 1 1 V Ω Ω Ω Ω Ω Ω µA µA SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS V+ = 4.2V, VNO or VNC = 3.3V/ 0.3V, INC(OFF), INO(OFF) VCOM = 0.3V/ 3.3V INC(ON), INO(ON), V+ = 4.2V, VCOM = 0.3V/ 3.3V, ICOM(ON) VNO or VNC = 0.3V/ 3.3V, or floating Channel-to-Channel Crosstalk XTALK Bandwidth –3 dB Channel ON Capacitance Charge Injection Select Input to Common I/O POWER REQUIREMENTS Power Supply Range Power Supply Current BW CON Q VBIAS = 2.1 V, VIN = 0 dBm, VIH = 3V, VIL= 0V,Test Circuit6 V+ I+ V+ = 4.2V, VIN = 0V or V+ - 40°C to +85°C - 40°C to +85°C 1.8 4.2 1 V µA Specifications subject to change without notice. 2 SGM5223 ELECTRICAL CHARACTERISTICS (V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = - 40°C to +85°C. Typical values are at V+ = +3.0V, TA = + 25°C, unless otherwise noted.) PARAMETER ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage current Channel ON Leakage current DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation tON tOFF tD OISO VIH = 1.5V, VIL= 0V, Test Circuit2 VIH = 1.5V, VIL= 0V, Test Circuit2 VIH = 1.5V, VIL= 0V, Test Circuit3 VBIAS = 1.5 V, VIN = 0 dBm VIH = 1.5V, VIL= 0V, Test Circuit4 VBIAS = 1.5 V, VIN = 0 dBm VIH = 1.5V, VIL= 0V, Test Circuit5 100KHz 1MHz 100KHz 1MHz +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C +25°C 22 34 15.5 -78 -58 -100 -104 55 8.5 95 ns ns ns dB dB dB dB MHz pC pF VINH VINL IIN V+ = 2.7V, VIN = 0 or 2.7V - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 1.5 0.4 1 V V µA VNO, VNC, VCOM RON ∆RON RFLAT(ON) INC(OFF), INO(OFF) INC(ON), INO(ON), ICOM(ON) V+ = 2.7 V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 2.7V, VNO or VNC = 1V, ICOM = -100 mA, Test Circuit 1 V+ = 3.6V, VNO or VNC = 3.3V / 0.3V, VCOM = 0.3V/ 3.3V V+ = 3.6V, VCOM = 0.3V/ 3.3V, VNO or VNC = 0.3V/ 3.3V, or floating - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C +25°C - 40°C to +85°C - 40°C to +85°C - 40°C to +85°C 0.15 0.15 0.1 0.1 0 0.6 V+ 0.9 1 0.22 0.25 0.22 0.26 1 1 V Ω Ω Ω Ω Ω Ω µA µA SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS Channel-to-Channel Crosstalk XTALK Bandwidth –3 dB Charge Injection Select Input to Common I/O Channel ON Capacitance BW Q CON VBIAS = 1.5 V, VIN = 0 dBm, VIH = 1.5V, VIL= 0V, Test Circuit6 VIN = GND, RS = 0 Ω, CL = 1.0 nF, Q = CL x VOUT, VIH = 1.5V, VIL= 0V, Test Circuit7 Specifications subject to change without notice. 3 SGM5223 ORDERING INFORMATION MODEL SGM5223 PINPACKAGE WQFN-10 SPECIFIED TEMPERATURE RANGE - 40°C to +85°C ORDERING NUMBER SGM5223YWQ10/TR PACKAGE MARKING 5223 PACKAGE OPTION Tape and Reel, 3000 ABSOLUTE MAXIMUM RATINGS V+ , IN to GND............................................................... 0V to +4.6V Analog, Digital voltage range(1)....................... - 0.3V to (V+ + 0.3V) Continuous Current NO, NC, or COM..................................±250mA Peak Current NO, NC, or COM.............................................±350mA Operating Temperature Range...................................- 40°C to +85°C Junction Temperature...............................................................+150°C Storage Temperature.................................................- 65°C to +150°C Lead Temperature (soldering, 10s).....................................+260°C ESD HBM） （ ...............................................................................4000V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. PIN DESCRIPTION WQFN PIN 1 6 4,8 3,9 2,10 5,7 NAME V+ GND IN1, IN2 COM1, COM2 NO1, NO2 NC1, NC2 FUNCTION Power supply Ground Digital control pin to connect the COM terminal to the NO or NC terminals Common terminal Normally-open terminal Normally-closed terminal Note: NO, NC and COM terminal may be an input or output. 4 SGM5223 TYPICAL PERFORMANCE CHARACTERISTICS Response vs.Frequency 3 V+ = +3V TA = +25℃ 0 On Response(dB) Response vs.Frequency 3 V+ = +4.2V TA = +25℃ 0 On Response(dB) -3 -3 -6 -6 -9 0.1 1 10 Frequency(MHz) 100 1000 -9 0.1 1 10 Frequency(MHz) 100 1000 Response vs.Frequency 20 0 -20 On Response(dB) -40 -60 -80 -100 -120 -140 0.01 V+ = +3V TA = +25℃ 0.1 1 10 Frequency(MHz) 100 1000 CROSSTALK Response vs.Frequency 20 0 -20 On Response(dB) OFF-ISOLATION -40 -60 -80 -100 -120 OFF-ISOLATION CROSSTALK V+ = +4.2V TA = +25℃ 0.1 1 10 Frequency(MHz) 100 1000 -140 0.01 5 SGM5223 TEST CIRCUITS 100mA V1 NO or NC VNO or VNC RON = V1/100mA COM Test Circuit 1. On Resistance V+ NC NO COM RL 50Ω GND CL 35pF VOUT V+ 50% VOH 50% 0.1μ F IN 90% 90% VOL tON tOFF Test Circuit 2. Switching Times (tON, tOFF) V+ 0.1μ F NC NO COM RL 50Ω GND CL 35pF VOUT V+ VIN 0 90% of VOH 50% IN VOUT 0 tD Test Circuit 3. Break-Before-Make Time (tD) 6 SGM5223 TEST CIRCUITS (Cont.) V+ 0.1µF V+ NO or NC Source Signal COM CL 5pF GND VOUT IN Test Circuit 4. Off Isolation V+ 0.1μ F V+ NO or NC Source Signal IN1 COM RL 50Ω CL 5pF IN2 N.C. NO or NC GND COM RL 50Ω VNO or VNC VOUT CL 5pF VOUT Channel To Channel Crosstalk = -20 ×log Test Circuit 5. Channel-to-Channel Crosstalk 7 SGM5223 TEST CIRCUITS (Cont.) 0.1μ F V+ V+ NO or NC COM CL 5pF GND VOUT Source Signal IN Test Circuit 6. Bandwidth V+ NC RS V+ NO IN GND COM CL 1nF VOUT VOUT 0 ΔOUT Q = ΔVOUT × CL Test Circuit 7. Charge Injection (Q) 8 SGM5223 PACKAGE OUTLINE DIMENSIONS WQFN-10 1.800 ±0.050 0.400 ±0.050 (×9) 0.400 TYP PIN #1 IDENTIFICATION CHAMFER 0.350×45° 1.400 ± 0.050 5223 0.500±0.050 0.200±0.050 0.800 REF PIN #1 DOT BY MARKING TOP VIEW BOTTOM VIEW 0.750±0.050 0.203 REF 0.000-0.050 SIDE VIEW Note: All linear dimensions are in millimeters. 9 SGM5223 REVISION HISTORY Location 10/07— Data Sheet REV.A Page Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com 10 SGM5223