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SGM8250-1XS8G/TR

SGM8250-1XS8G/TR

  • 厂商:

    SGMICRO(圣邦微)

  • 封装:

    SOIC8_150MIL

  • 描述:

    高压,微功率,零漂移,CMOS 运算放大器

  • 数据手册
  • 价格&库存
SGM8250-1XS8G/TR 数据手册
SGM8250-1/SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers GENERAL DESCRIPTION FEATURES The single SGM8250-1 and dual SGM8250-2 CMOS  Low Offset Voltage: 50μV (MAX) operational amplifiers provide very low offset voltage  Low 0.1Hz to 10Hz Noise: 0.85μVP-P and zero-drift over time and temperature.  Quiescent Current: 50μA/Amplifier (TYP) The miniature, high precision, low quiescent current  Single or Dual Supply Operation amplifiers offer high-impedance inputs that have a wide  Supply Voltage Range: 3V to 24V input common mode range of 100mV beyond the rails  Rail-to-Rail Input and Output and rail-to-rail output that swings within 65mV of the  -40℃ to +125℃ Operating Temperature Range rails. Single or dual supplies as low as 3V (±1.5V) and  Small Packaging: up to 24V (±12V) may be used. They are optimized for wide power supply range operation. The single SGM8250-1 is available in Green SOT-23-5, SC70-5 and SOIC-8 packages. The dual SGM8250-2 is available in Green TDFN-3×3-8L and SOIC-8 packages. They are specified over -40℃ to +125℃ temperature range. SGM8250-1 Available in Green SOT-23-5, SC70-5 and SOIC-8 Packages SGM8250-2 Available in Green TDFN-3×3-8L and SOIC-8 Packages APPLICATIONS Transducer Applications Temperature Measurements Electronic Scales Medical Instrumentation Battery-Powered Instruments Handheld Test Equipment SG Micro Corp www.sg-micro.com DECEMBER 2017 - REV. A SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers PACKAGE/ORDERING INFORMATION MODEL SGM8250-1 PACKAGE DESCRIPTION SPECIFIED TEMPERATURE RANGE ORDERING NUMBER PACKAGE MARKING PACKING OPTION SOT-23-5 -40℃ to +125℃ SGM8250-1XN5G/TR GSCXX Tape and Reel, 3000 SC70-5 -40℃ to +125℃ SGM8250-1XC5G/TR GS3XX Tape and Reel, 3000 SOIC-8 -40℃ to +125℃ SGM8250-1XS8G/TR TDFN-3×3-8L -40℃ to +125℃ SGM8250-2XTDB8G/TR SOIC-8 -40℃ to +125℃ SGM8250-2XS8G/TR SGM8250-2 SGM 82501XS8 XXXXX SGM 82502DB XXXXX SGM 82502XS8 XXXXX Tape and Reel, 4000 Tape and Reel, 4000 Tape and Reel, 4000 MARKING INFORMATION NOTE: XX = Date Code. XXXXX = Date Code and Vendor Code. SOT-23-5/SC70-5 SOIC-8/TDFN-3×3-8L XXXXX YYY X X Date Code - Month Date Code - Year Serial Number Vendor Code Date Code - Week Date Code - Year Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If you have additional comments or questions, please contact your SGMICRO representative directly. ABSOLUTE MAXIMUM RATINGS Supply Voltage .............................................................. 26.4V Input Common Mode Voltage Range .................................................... (-VS) - 0.3V to (+VS) + 0.3V Junction Temperature .................................................+150℃ Storage Temperature Range ........................ -65℃ to +150℃ Lead Temperature (Soldering, 10s) ............................+260℃ ESD Susceptibility HBM ............................................................................. 8000V MM ................................................................................. 250V CDM ............................................................................ 1000V absolute maximum rating conditions for extended periods may affect reliability. Functional operation of the device at any conditions beyond those indicated in the Recommended Operating Conditions section is not implied. ESD SENSITIVITY CAUTION Specified Voltage Range ........................................3V to 24V Operating Temperature Range .................... -40℃ to +125℃ This integrated circuit can be damaged if ESD protections are not considered carefully. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because even small parametric changes could cause the device not to meet the published specifications. OVERSTRESS CAUTION DISCLAIMER RECOMMENDED OPERATING CONDITIONS Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Exposure to SG Micro Corp www.sg-micro.com SG Micro Corp reserves the right to make any change in circuit design, or specifications without prior notice. DECEMBER 2017 2 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers PIN CONFIGURATIONS SGM8250-1 (TOP VIEW) 1 -VS 2 5 +VS +IN 1 -VS 2 -IN 3 5 +VS 4 OUT + OUT SGM8250-1 (TOP VIEW) +IN 1 -IN 2 +IN 3 -VS 4 4 3 -IN SOT-23-5 SC70-5 SGM8250-1 (TOP VIEW) SGM8250-2 (TOP VIEW) 8 NC OUTA 1 _ 7 +VS -INA 2 + NC _ _ + 6 OUT +INA 3 5 NC -VS 4 NC = NO CONNECT SOIC-8 _ + + _ 8 +VS 7 OUTB 6 -INB 5 +INB SOIC-8 SGM8250-2 (TOP VIEW) OUTA 1 -INA 2 +INA 3 -VS 4 -VS 8 +VS 7 OUTB 6 -INB 5 +INB TDFN-3×3-8L SG Micro Corp www.sg-micro.com DECEMBER 2017 3 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers ELECTRICAL CHARACTERISTICS (At TA = +25℃, +VS = 5V, -VS = 0V, VCM = +VS/2, VOUT = +VS/2 and RL = 10kΩ to +VS/2, Full = -40℃ to +125℃, unless otherwise noted.) PARAMETER CONDITIONS TEMP MIN TYP MAX 10 50 UNITS Input Characteristics +25℃ Input Offset Voltage (VOS) Full Input Offset Voltage Drift (ΔVOS/ΔT) Input Bias Current (IB) Input Common Mode Voltage Range (VCM) Common Mode Rejection Ratio (CMRR) (-VS) - 0.1V < VCM < (+VS) + 0.1V Open-Loop Voltage Gain (AOL) (-VS) + 0.1V < VOUT < (+VS) - 0.1V 90 μV Full 0.11 μV/℃ +25℃ 60 pA Full (-VS) - 0.1 +25℃ 95 Full 92 +25℃ 108 Full 105 (+VS) + 0.1 112 V dB 131 dB Output Characteristics 14 +25℃ VOH Full Output Voltage Swing from Rail 30 8 +25℃ VOL Full Output Short-Circuit Current (ISC) 25 16 mV 20 ±17 +25℃ mA Power Supply Operating Voltage Range (VS) Full Quiescent Current/Amplifier (IQ) IOUT = 0 Power Supply Rejection Ratio (PSRR) VS = 3V to 24V 3 24 45 +25℃ Full 60 80 +25℃ 116 Full 113 142 V μA dB Dynamic Performance Gain-Bandwidth Product (GBP) G = +100, CL = 100pF Slew Rate (SR) G = +1, VOUT = 2VP-P, CL = 100pF Turn-On Time +25℃ 350 kHz +25℃ 0.1 V/μs +25℃ 0.75 ms Noise Input Voltage Noise f = 0.1Hz to 10Hz +25℃ 0.85 μVP-P Input Voltage Noise Density (en) f = 1kHz +25℃ 40 nV/√Hz SG Micro Corp www.sg-micro.com DECEMBER 2017 4 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers ELECTRICAL CHARACTERISTICS (continued) (At TA = +25℃, +VS = 24V, -VS = 0V, VCM = +VS/2, VOUT = +VS/2 and RL = 10kΩ to +VS/2, Full = -40℃ to +125℃, unless otherwise noted.) PARAMETER CONDITIONS TEMP MIN TYP MAX 10 50 UNITS Input Characteristics +25℃ Input Offset Voltage (VOS) Full Input Offset Voltage Drift (ΔVOS/ΔT) Input Bias Current (IB) Input Common Mode Voltage Range (VCM) Common Mode Rejection Ratio (CMRR) (-VS) - 0.1V < VCM < (+VS) + 0.1V Open-Loop Voltage Gain (AOL) (-VS) + 0.1V < VOUT < (+VS) - 0.1V 90 Full 0.11 +25℃ 80 Full (-VS) - 0.1 +25℃ 112 Full 107 +25℃ 120 Full 110 μV μV/℃ 850 pA (+VS) + 0.1 V 130 dB 145 dB Output Characteristics 65 +25℃ VOH Full Output Voltage Swing from Rail 37 +25℃ VOL Full Output Short-Circuit Current (ISC) 95 130 60 mV 85 ±17 +25℃ mA Power Supply Operating Voltage Range (VS) Full Quiescent Current/Amplifier (IQ) IOUT = 0 Power Supply Rejection Ratio (PSRR) VS = 3V to 24V 3 24 50 +25℃ Full 64 84 +25℃ 116 Full 113 142 V μA dB Dynamic Performance Gain-Bandwidth Product (GBP) G = +100, CL = 100pF Slew Rate (SR) G = +1, VOUT = 2VP-P, CL = 100pF Turn-On Time +25℃ 350 kHz +25℃ 0.09 V/μs +25℃ 1.5 ms Noise Input Voltage Noise f = 0.1Hz to 10Hz +25℃ 0.85 μVP-P Input Voltage Noise Density (en) f = 1kHz +25℃ 40 nV/√Hz SG Micro Corp www.sg-micro.com DECEMBER 2017 5 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃, +VS = 5V, -VS = 0V, RL = 10kΩ and CL = 0pF, unless otherwise noted. Quiescent Current vs. Temperature Small-Signal Overshoot vs. Load Capacitance 50 Small-Signal Overshoot (%) 60 50 40 30 20 -50 -25 0 25 50 75 100 40 30 20 10 0 125 10 100 Common Mode Rejection Ratio vs. Frequency Power Supply Rejection Ratio vs. Frequency 120 150 120 80 PSRR (dB) CMRR (dB) 100 60 40 90 60 30 20 0 0.01 0.1 1 10 100 1000 0 0.01 10000 0.1 1 Frequency (kHz) 100 60 Open-Loop Gain (dB) 90 80 60 40 20 Closed-Loop Gain (dB) SG Micro Corp www.sg-micro.com 1000 10000 100 0 -30 Open-Loop Gain 30 0 -60 -90 Phase -30 -120 -60 -90 0 10 100 Open-Loop Gain and Phase vs. Frequency 120 1 10 Frequency (kHz) Settling Time vs. Closed-Loop Gain Setting Time (μs) 1000 Load Capacitance (pF) Temperature (℃) Phase (degree) Quiescent Current/Amplifier (μA) 70 -150 0.1 1 10 100 -180 1000 Frequency (kHz) DECEMBER 2017 6 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TA = +25℃, +VS = 5V, -VS = 0V, RL = 10kΩ and CL = 0pF, unless otherwise noted. Large-Signal Step Response Small-Signal Step Response G = +1, CL = 100pF Output Voltage (50mV/div) Output Voltage (500mV/div) G = +1, CL = 100pF Time (100μs/div) Time (100μs/div) Positive Overload Recovery Negative Overload Recovery G = -10, f = 1kHz G = -10, f = 1kHz VIN 500mV/div 500mV/div 0V VIN 0V 0V 1V/div 0V 1V/div VOUT VOUT Time (50μs/div) Time (50μs/div) Turn-On Time 0.1Hz to 10Hz Noise 2V/div VS 0V 200mV/div VOUT 0V Time (200μs/div) SG Micro Corp www.sg-micro.com Noise (200nV/div) G = +1, VIN+ = 0.1V Time (1s/div) DECEMBER 2017 7 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers TYPICAL PERFORMANCE CHARACTERISTICS (continued) At TA = +25℃, +VS = 5V, -VS = 0V, RL = 10kΩ and CL = 0pF, unless otherwise noted. Input Voltage Noise Density vs. Frequency Offset Voltage Production Distribution 15 Frequency (Hz) SG Micro Corp www.sg-micro.com 50 40 0 30 10000 20 1000 10 100 0 10 3 -10 1 6 -20 10 9 -30 100 12 -40 Continues with no 1/f (flicker) noise. 19300 Samples 1 Production Lot -50 Percentage of Amplifiers (%) Input Voltage Noise Density (nV/√Hz) 1000 Offset Voltage (μV) DECEMBER 2017 8 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers APPLICATION INFORMATION The SGM8250-1 and SGM8250-2 are unity-gain stable and free from unexpected output phase reversal. They provide low offset voltage and very low drift over time and temperature. For lowest offset voltage and precision performance, circuit layout and mechanical conditions should be optimized. Avoid temperature gradients that create thermoelectric (Seebeck) effects in the thermocouple junctions formed from connecting dissimilar conductors. These thermally-generated potentials can be made to cancel by ensuring they are equal on both input terminals. Other layout and design considerations include: • Use low thermoelectric-coefficient conditions (avoid dissimilar metals). • Thermally isolate components from power supplies or other heat sources. • Shield operational amplifier and input circuitry from air currents, such as cooling fans. Following these guidelines will reduce the likelihood of junctions being at different temperatures, which can cause thermoelectric voltages of 0.11μV/℃ or higher, depending on materials used. Operating Voltage The SGM8250-1 and SGM8250-2 operational amplifiers operate over a power supply range of 3V to 24V (±1.5V to ±12V). Supply voltages higher than 26.4V (absolute maximum) can permanently damage the device. Input Voltage The SGM8250-1 and SGM8250-2 input common mode voltage range extends 0.1V beyond the supply rails. The SGM8250-1 and SGM8250-2 are designed to cover the full range without the troublesome transition region found in some other rail-to-rail amplifiers. Normally, input bias current is about 80pA; however, input voltages exceeding the power supplies can cause excessive current flowing into or out of the input pins. Internal Offset Correction The SGM8250-1 and SGM8250-2 operational amplifiers use an auto-calibration technique to reduce internal offset. Upon power-up, the amplifier requires approximately 1.5ms to achieve specified VOS accuracy. General Layout Guidelines Attention to good layout practices is always recommended. Keep traces short and, when possible, use a printed circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible. Place a 0.1μF capacitor closely across the supply pins. These guidelines should be applied throughout the analog circuit to improve performance and provide benefits such as reducing the EMI (electromagnetic interference) susceptibility. Operational amplifiers vary in their susceptibility to radio frequency interference (RFI). RFI can generally be identified as a variation in offset voltage or DC signal levels with changes in the interfering RF signal. The SGM8250-1 and SGM8250-2 have been specifically designed to minimize susceptibility to RFI and demonstrate remarkably low sensitivity. Strong RF fields may still cause varying offset levels. Figure 1 shows the basic configuration for a bridge amplifier. A low-side current shunt monitor is shown in Figure 2. RN are operational resistors used to isolate the ADC 2 from the noise of the digital I C bus. Since the ADC is a 16-bit converter, a precision reference is essential for maximum accuracy. Related application circuits are shown in Figure 3 ~ 5. R1 VEX 5V R R R R VOUT SGM8250-1 R1 VREF Figure 1. Bridge Amplifier Configuration SG Micro Corp www.sg-micro.com DECEMBER 2017 9 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers APPLICATION INFORMATION (continued) R3 SGM8706's 1.2V Voltage Reference R4 0.01µF Load R1 SGM8706 VBAT I/O SGM8250-1 ILOAD RSHUNT R2 R6 CPU R5 C1 ADC C2 Figure 2. Low-side Current Shunt Monitor RG RSHUNT Zener (1) R1 (2) 10kΩ +VS MOSFET rated for up to 50V SGM8250-1 5V Dual NMOSFETs biasing method is shown. (3) Load RBIAS VOUT RL NOTES: (1) Zener rated for operational amplifier supply capability (that is, 24V for SGM8250-1 and SGM8250-2). (2) Current-limit resistor. (3) Choose Zener biasing resistor or dual NMOSFETs. Figure 3. High-side Current Shunt Monitor SG Micro Corp www.sg-micro.com DECEMBER 2017 10 SGM8250-1 SGM8250-2 High Voltage, Micro-Power, Zero-Drift, CMOS Operational Amplifiers APPLICATION INFORMATION (continued) 100kΩ 1MΩ 60kΩ 3V NTC Thermistor 1MΩ SGM8250-1 VOUT Figure 4. Thermistor Measurement V1 SGM8250-1 R R R2 R1 SGM8250-1 VOUT R2 R SGM8250-1 V2 R VOUT = (1 + 2R2/R1) (V2 – V1) Figure 5. Precision Instrumentation Amplifier Configuration REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (DECEMBER 2017) to REV.A Page Changed from product preview to production data ............................................................................................................................................. All SG Micro Corp www.sg-micro.com DECEMBER 2017 11 PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS SOT-23-5 1.90 D e1 E1 2.59 E 0.99 b e 0.69 0.95 RECOMMENDED LAND PATTERN (Unit: mm) L A A1 θ A2 Symbol Dimensions In Millimeters MIN MAX c 0.2 Dimensions In Inches MIN MAX A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950 BSC 0.037 BSC e1 1.900 BSC 0.075 BSC SG Micro Corp www.sg-micro.com L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° TX00033.000 PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS SC70-5 D e1 0.65 e E1 1.9 E 0.75 b 0.4 1.3 RECOMMENDED LAND PATTERN (Unit: mm) L L1 A θ A1 c 0.20 A2 Symbol Dimensions In Millimeters MIN MAX Dimensions In Inches MIN MAX A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.65 TYP 0.026 TYP e1 1.300 BSC 0.051 BSC L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SG Micro Corp www.sg-micro.com TX00043.000 PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS TDFN-3×3-8L D e N8 D1 k E E1 L N4 N1 b BOTTOM VIEW TOP VIEW 2.3 1.5 2.725 A A1 A2 0.675 SIDE VIEW 0.24 0.65 RECOMMENDED LAND PATTERN (Unit: mm) Symbol Dimensions In Millimeters MIN MAX Dimensions In Inches MIN MAX A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A2 0.203 REF 0.008 REF D 2.900 3.100 0.114 0.122 D1 2.200 2.400 0.087 0.094 E 2.900 3.100 0.114 0.122 E1 1.400 1.600 0.055 k b 0.200 MIN 0.180 e L SG Micro Corp www.sg-micro.com 0.300 0.007 0.575 0.015 0.650 TYP 0.375 0.063 0.008 MIN 0.012 0.026 TYP 0.023 TX00058.000 PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS SOIC-8 0.6 D e 2.2 E1 E 5.2 b 1.27 RECOMMENDED LAND PATTERN (Unit: mm) L A A1 c θ A2 Symbol Dimensions In Millimeters MIN MAX Dimensions In Inches MIN MAX A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e SG Micro Corp www.sg-micro.com 1.27 BSC 0.050 BSC L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° TX00010.000 PACKAGE INFORMATION TAPE AND REEL INFORMATION REEL DIMENSIONS TAPE DIMENSIONS P2 W P0 Q1 Q2 Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 Q3 Q4 B0 Reel Diameter K0 A0 P1 Reel Width (W1) DIRECTION OF FEED NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF TAPE AND REEL Reel Diameter Reel Width W1 (mm) A0 (mm) B0 (mm) K0 (mm) P0 (mm) P1 (mm) P2 (mm) W (mm) Pin1 Quadrant SOT-23-5 7″ 9.5 3.20 3.20 1.40 4.0 4.0 2.0 8.0 Q3 SC70-5 7″ 9.5 2.25 2.55 1.20 4.0 4.0 2.0 8.0 Q3 TDFN-3×3-8L 13″ 12.4 3.35 3.35 1.13 4.0 8.0 2.0 12.0 Q1 SOIC-8 13″ 12.4 6.40 5.40 2.10 4.0 8.0 2.0 12.0 Q1 SG Micro Corp www.sg-micro.com TX10000.000 DD0001 Package Type PACKAGE INFORMATION CARTON BOX DIMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF CARTON BOX Length (mm) Width (mm) Height (mm) Pizza/Carton 7″ (Option) 368 227 224 8 7″ 442 410 224 18 13″ 386 280 370 5 SG Micro Corp www.sg-micro.com DD0002 Reel Type TX20000.000
SGM8250-1XS8G/TR 价格&库存

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