0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SGM8522XS

SGM8522XS

  • 厂商:

    SGMICRO(圣邦微)

  • 封装:

  • 描述:

    SGM8522XS - 150KHz, 4.7μA, Rail-to-Rail I/O CMOS Operational Amplifier - Shengbang Microelectronics ...

  • 数据手册
  • 价格&库存
SGM8522XS 数据手册
Preliminary Datasheet SGM8521 SGM8522 SGM8524 PRODUCT DESCRIPTION The SGM8521 (single),SGM8522 (dual) and SGM8524 (quad) are rail-to-rail input and output voltage feedback amplifiers offering low cost. They have a wide input common-mode voltage range and output voltage swing, and take the minimum operating supply voltage down to 2.1V and the maximum recommended supply voltage is 5.5 V. All are specified over the extended –40°C to +125°C temperature range. The SGM8521/8522/8524 provide150KHz bandwidth at a low current consumption of 4.7µA per amplifier. Very low input bias currents of 0.5pA, enable the SGM8521/8522/8524 to be used for integrators, photodiode amplifiers, and piezoelectric sensors. Rail-to-Rail inputs and outputs are useful to designers buffering ASIC in single-supply systems. Applications for these amplifiers include safety monitoring, portable equipment, battery and power supply control, and signal conditioning and interfacing for transducers in very low power systems. The SGM8521 is available in the tiny SOT23-5 and SO-8 packages. The SGM8522 comes in the miniature SO-8 and MSOP-8 packages. The SGM8524 is offered in TSSOP-16 SO-16 and SO-14 packages. 150KHz, 4.7µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES • Low Cost • Rail-to-Rail Input and Output 0.8mV Typical VOS • Unity Gain Stable • Gain Bandwidth Product: 150KHz • Very low input bias currents : 0.5pA • Operates on 2.1 V to 5.5 V Supplies • Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5V • Low Supply Current: 4.7µA/Amplifier • Small Packaging SGM8521 Available in SO-8 and SOT23-5 SGM8522 Available in SO-8 and MSOP-8 SGM8524 Available in SO-16, SO-14 and TSSOP-16 PIN CONFIGURATIONS (Top View) SGM8521 OUT -VS 1 2 4 -IN 5 +VS +IN 3 SOT23-5 SGM8521 NC -IN +IN -VS 1 2 3 4 8 7 6 5 NC +VS OUT NC +INA -VS OUT A -INA 1 2 3 4 SGM8522 8 7 6 +VS OUT B -INB APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Audio Output Portable Systems Smoke Detectors Mobile Telephone Notebook PC PCMCIA cards Battery-Powered equipment 5 +INB NC = NO CONNECT SO-8 SO-8 / MSOP-8 SGM8524 OUT A -IN A +IN A +VS +INB -IN B OUT B 1 2 3 4 5 6 7 14 OUT D 13 -IND +IN A 12 +IND +VS 11 -VS 10 +INC 9 8 -INC OUT C +INB -IN B OUT B NC 5 6 7 8 4 OUT A -IN A 1 2 3 SGM8524 16 OUT D 15 -IND 14 +IND 13 -VS 12 +INC 11 10 NC = NO CONNECT -INC OUT C NC 9 SO-14 SO-16/TSSOP-16 Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com REV. B ELECTRICAL CHARACTERISTICS : VS = +5V (At RL = 500kΩ connected to Vs/2 and VOUT = Vs/2, unless otherwise noted) SGM8521/8522/8524 PARAMETER Symbol CONDITION TYP +25℃ INPUT CHARACTERISTICS Input Offset Voltage Input Bias Current Input Offset Current Common-Mode Voltage Range Common-Mode Rejection Ratio Open-Loop Voltage Gain Input Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current Short-Circuit Current POWER SUPPLY 2.1 5.5 Power Supply Rejection Ratio Quiescent Current / Amplifier DYNAMIC PERFORMANCE Gain-Bandwidth Product Slew Rate Settling Time to 0.1% Overload Recovery Time NOISE PERFORMANCE Voltage Noise Density en f = 1kHz f = 10kHz 40 12 nV/ nV/ Hz Hz MIN/MAX OVER TEMPERATURE +25 ℃ 0℃ to 70℃ - 40℃ to - 40℃ to +85℃ +125℃ UNITS MIN/ MAX VOS IB IOS VCM CMRR AOL ∆VOS/∆T VS = 5.5V VS = 5.5V, VCM = -0.1V to 4 V VS = 5.5V, VCM = -0.1V to 5.6 V RL = 100KΩ ,Vo = 0.1V to 4.9V RL =500KΩ ,Vo = 0.015V to 4.965V ±0.8 0.5 0.5 -0.1 to +5.6 91 83 100 104 1.7 ±3.5 mV pA pA V MAX TYP TYP TYP MIN MIN MIN MIN TYP 72 63 84 90 dB dB dB dB µV/℃ RL = 500KΩ IOUT ISC 0.005 22 V mA mA MAX MIN TYP Operating Voltage Range PSRR IQ Vs = +2.5 V to + 5.5 V VCM = (-VS) + 0.5 IOUT = 0 CL = 100pF GBP SR tS G = +1 , 2V Output Step G = +1, 2 V Output Step VIN ·Gain = Vs 150 0.04 32 91 4.7 V V dB µA MIN MAX MIN MAX KHz V/µs µs µs TYP TYP TYP TYP TYP TYP Specifications subject to change without notice. 2 SGM8521/8522/8524 PACKAGE/ORDERING INFORMATION MODEL SGM8521 ORDER NUMBER SGM8521XN5/TR SGM8521XS/TR SGM8522XS/TR SGM8522XMS/TR SGM8524XS/TR SGM8524 SGM8524XS14 SGM8524XTS/TR PACKAGE DESCRIPTION SOT23-5 SO-8 SO-8 MSOP-8 SO-16 SO-14 TSSOP-16 PACKAGE OPTION Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 2500 Tape and Reel, 3000 Tape and Reel, 2500 Tube Tape and Reel, 3000 MARKING INFORMATION 8521 SGM8521XS SGM8522XS SGM8522XMS SGM8524XS SGM8524XS14 SGM8524XTS SGM8522 ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . 7.5 V Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . (–VS) – 0.5 V to (+VS )+0.5V Storage Temperature Range . . . . . . . . .–65℃ to +150℃ Junction Temperature . . . . . . . . . . . . . . . .. . . . . . . .160℃ Operating Temperature Range . . . . . . –55℃ to +150℃ Package Thermal Resistance @ TA = 25℃ SOT23-5, θJA.............................................................. 190℃/W SO-8, θJA......................................................................125℃/W MSOP-8, θJA.............................................................. 216℃/W SO-16, θJA..................................................................... 82℃/W TSSOP-16, θJA............................................................ 105℃/W Lead Temperature Range (Soldering 10 sec) .....................................................260℃ ESD Susceptibility HBM................................................................................4000V MM....................................................................................400V NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 3 SGM8521/8522/8524 TYPICAL PERFORMANCE CHARACTERISTICS At TA= +25℃, VS = +5V, and RL=500kΩ connected to Vs/2,unless otherwise noted. Small-Signal Step Response G = +1 RL = 500KΩ CL = 20pF Small-Signal Step Response G = +1 RL = 500KΩ CL = 100pF 50mV/div 50µs/div 50mV/div 50µs/div Large-Signal Step Response Small-Signal Overshoot(%) G = +1 CL = 100pF RL = 500KΩ Small-Signal Overshoot vs.Load Capacitance 50 40 30 20 10 0 G=+1 RL=500KΩ 10 100 Load Capacitance(pF) 1000 G=-1 RFB=560KΩ 1V/div 100µs/div Maximum Output Voltage vs. Frequency 6 5 Output Voltage(Vp-p) 4 3 2 VS = 2.5V 1 0 1 10 Frequency(kHz) 100 VS = 5V Maximum Output Voltage Without Slew-Rate Induced Distortion Quiescent And Short-Circuit Current vs.Supply Voltage 6 Quiescent Current( μA) 5.5 5 4.5 4 3.5 3 2 2.5 3 3.5 4 4.5 Supply Voltage(V) 5 5.5 20 17.5 Short-Circuit Current(mA) VS = 5.5V ISC 15 12.5 IQ 10 7.5 5 4 SGM8521/8522/8524 TYPICAL PERFORMANCE CHARACTERISTICS At TA= +25℃, VS = +5V, and RL=500kΩ connected to Vs/2,unless otherwise noted. Input Voltage Noise Spectral Density vs.Frequency CMRR And PSRR vs.Frequency 100 90 80 CMRR,PSRR(dB) 70 60 50 40 30 20 10 0 0.01 0.1 PSRR 1 10 Frequency(kHz) 100 1000 CMRR 1000 Voltage Noise(nV/ √Hz) 100 10 0.01 0.1 1 Frequency(kHz) 10 100 Output Voltage Swing vs.Output Current 3 135℃ Output Voltage(V) 2 VS = 3 V 1 -50℃ 25℃ 135℃ Sinking Current 0 0 4 8 12 16 20 Output Current(mA) Sourcing Current -50℃ Output Voltage(V) 5 Output Voltage Swing vs.Output Current 135℃ 4 3 2 1 0 0 5 135℃ 10 15 25℃ 20 25 30 Sourcing Current 25℃ VS = 5 V -50℃ 25℃ Sinking Current -50℃ Output Current(mA) Supply Current vs.Temperature 7 6 VS=5V 5 4 3 2 -45 -25 -5 15 35 55 75 95 115 135 Temperature(℃) Supply Current( µA) 5 SGM8521/8522/8524 APPLICATION NOTES Driving Capacitive Loads The SGM852X can directly drive 250pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD. Power-Supply Bypassing and Layout The SGM852X family operates from either a single +2.5V to +5.5V supply or dual ±1.25V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance. VDD VDD 10µF 10µF 0.1µF 0.1µF RISO SGM8521 Vn VOUT CL Vn SGM8521 VOUT SGM8521 VOUT 10µF VIN Vp Vp Figure 1. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 2, It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output, CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. VSS(GND) 0.1µF VSS Figure 3. Amplifier with Bypass Capacitors CF RF RISO SGM8521 VOUT CL RL VIN Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. 6 SGM8521/8522/8524 Typical Application Circuits Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp – Vn ) × R2 / R1 + Vref. C R2 R1 VIN SGM8521 R2 Vn Vp R3 R4 Vref Figure 4. Differential Amplifier VOUT R1 SGM8521 VOUT R3 = R1 // R2 Figure 6. Low Pass Active Filter Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. R2 R1 SGM8521 Vn SGM8521 VOUT Vp SGM8521 R3 R4 Vref Figure 5. Instrumentation Amplifier Low Pass Active Filter The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 ) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration. 7 SGM8521/8522/8524 PACKAGE OUTLINE DIMENSIONS SOT23-5 D b L 0 θ 0.20 Symbol A A1 Dimensions In Millimeters Min 1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0° Dimensions In Inches Min 0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 0.071 0.012 0° Max 1.250 0.100 1.150 0.400 0.200 3.020 1.700 2.950 2.000 0.600 8° Max 0.049 0.004 0.045 0.016 0.008 0.119 0.067 0.116 0.079 0.024 8° E1 A2 b c E L e e1 A1 D C E E1 e e1 0.950TYP 0.700REF 0.037TYP 0.028REF A2 L L1 θ A 8 SGM8521/8522/8524 PACKAGE OUTLINE DIMENSIONS SO-8 D C Symbol L Dimensions In Millimeters Min Max 1.750 0.250 1.550 0.510 0.250 5.000 4.000 6.300 1.270 8° 1.350 0.100 1.350 0.330 0.190 4.780 3.800 5.800 0.400 0° Dimensions In Inches Min 0.053 0.004 0.053 0.013 0.007 0.188 0.150 0.228 0.016 0° Max 0.069 0.010 0.061 0.020 0.010 0.197 0.157 0.248 0.050 8° A A1 E1 E A2 B C D e θ E E1 e A1 1.270TYP 0.050TYP B A2 L θ A 9 SGM8521/8522/8524 PACKAGE OUTLINE DIMENSIONS MSOP-8 b C Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min Max 0.800 1.200 0.000 0.200 0.760 0.970 0.30 TYP 0.15 TYP 2.900 3.100 0.65 TYP 2.900 3.100 4.700 5.100 0.410 0.650 0° 6° Dimensions In Inches Min Max 0.031 0.047 0.000 0.008 0.030 0.038 0.012 TYP 0.006 TYP 0.114 0.122 0.026 TYP 0.114 0.122 0.185 0.201 0.016 0.026 0° 6° E1 E e D A1 θ L A2 A 10 SGM8521/8522/8524 PACKAGE OUTLINE DIMENSIONS SO-16 D C Symbol A A1 A2 b c D E E1 e L θ E1 E Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 9.800 10.20 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 0° 8° Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.386 0.402 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 0° 8° L θ e A2 A1 b A 11 SGM8521/8522/8524 PACKAGE OUTLINE DIMENSIONS TSSOP-16 A b Symbol E1 E Dimensions In Millimeters Min Max 5.100 4.500 0.300 0.200 6.550 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1° 7° 4.900 4.300 0.190 0.090 6.250 Dimensions In Inches Min Max 0.193 0.169 0.007 0.004 0.246 0.201 0.177 0.012 0.008 0.258 0.043 0.031 0.039 0.001 0.006 0.026 (BSC) 0.020 0.028 0.01(TYP) 1° 7° PIN #1 IDENT. e A2 A C θ D L H A1 A D E b c E1 A A2 A1 e L H θ 12 SGM8521/8522/8524 PACKAGE OUTLINE DIMENSIONS SO-14 D R1 θ1 L2 R L L1 INDEX Φ0.8±0.1 DEP0.2±0.1 Symbol A A1 A2 A3 b b1 c c1 D E E1 e L L1 L2 R R1 h θ θ1 θ2 θ3 θ4 Dimensions In Millimeters MIN NOM MAX 1.35 0.10 1.25 0.55 0.36 0.35 0.16 0.15 8.53 5.80 3.80 0.45 1.60 0.15 1.45 0.65 0.40 1.75 0.25 1.65 0.75 0.49 0.45 0.25 0.25 8.73 6.20 4.00 θ2 E1 E Φ2.0±0.1 BTM E-MARK DEP0.1±0.05 h h e b 0.25 θ BB M θ3 A2 A A3 A1 θ4 b 0.10 0.20 8.63 6.00 3.90 1.27 BSC 0.60 0.80 1.04 REF 0.25 BSC BASE METAL b1 WITH PLATING 0.07 0.07 0.30 0° 6° 6° 5° 5° 0.40 8° 8° 7° 7° 0.50 8° 10° 10° 9° 9° c1 c SECTION B-B 13 SGM8521/8522/8524 REVISION HISTORY Location Page 11/06— Data Sheet changed from Preliminary to REV. A Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 11/06— Data Sheet changed from REV. A to REV. B Adds SO-14 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1, 3 Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com 14 SGM8521/8522/8524
SGM8522XS 价格&库存

很抱歉,暂时无法提供与“SGM8522XS”相匹配的价格&库存,您可以联系我们找货

免费人工找货
SGM8522XS/TR
  •  国内价格
  • 1+1.54423
  • 30+1.48828
  • 100+1.37638
  • 500+1.26448
  • 1000+1.20853

库存:0