SGM8632XS

SGM8631 SGM8632 SGM8633 SGM8634 PRODUCT DESCRIPTION The SGM8631(single), SGM8632(dual), SGM8633(single with shutdown) and SGM8634 (quad) are low noise, low voltage, and low power operational amplifiers, that can be designed into a wide range of applications. The SGM8631/2/3/4 have a high gain-bandwidth product of 6MHz, a slew rate of 3.7V/μs, and a quiescent current of 470μA/amplifier at 5V. The SGM8633 has a power-down disable feature that reduces the supply current to 90nA. The SGM8631/2/3/4 are designed to provide optimal performance in low voltage and low noise systems. They provide rail-to-rail output swing into heavy loads. The input common-mode voltage range includes ground, and the maximum input offset voltage are 3.5mV for SGM8631/2/3/4. They are specified over the extended industrial temperature range (−40°C to +125°C). The operating range is from 2.5V to 5.5V. The single version, SGM8631/8633, is available in SC70-5, SO-8 and SOT23-5(6) packages. The dual version SGM8632 is available in SO-8 and MSOP-8 packages. The quad 470µA, 6MHz, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES Low Cost Rail-to-Rail Input and Output 0.8mV Typical VOS High Gain-Bandwidth Product: 6MHz High Slew Rate: 3.7V/µs Settling Time to 0.1% with 2V Step: 2.1µs Overload Recovery Time: 0.9µs Low Noise : 12 nV/ Hz Operates on 2.5 V to 5.5V Supplies Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V Low Power 470μA/Amplifier Typical Supply Current SGM8633 90nA when Disabled Small Packaging SGM8631 Available in SC70-5, SOT23-5 and SO-8 SGM8632 Available in MSOP-8 and SO-8 SGM8633 Available in SOT23-6 and SO-8 SGM8634 Available in TSSOP-16 and SO-16 PIN CONFIGURATIONS (Top View) SGM8631 OUT -VS 1 2 4 SOT23-5 / SC70-5 -IN 5 +VS NC -IN +IN -VS 1 2 3 4 NC = NO CONNECT version SGM8634 is available in SO-16 and TSSOP-16 packages. SGM8631/8633 8 7 6 5 SO-8 6 5 4 +VS DISABLE (SGM8633 ONLY) +VS OUT NC APPLICATIONS Sensors Audio Active Filters A/D Converters Communications Test Equipment Cellular and Cordless Phones Laptops and PDAs Photodiode Amplification Battery-Powered Instrumentation +IN 3 SGM8633 8633 OUT -VS +IN 1 2 3 SOT23-6 SGM8634 DISABLE OUT A -IN -IN A +IN A +VS 8 7 6 5 +VS OUT B -IN B +IN B +INB -INB OUT B NC 1 2 3 4 5 6 7 8 NC = NO CONNECT 16 OUT D 15 -IND 14 +IND 13 -VS 12 +INC 11 10 9 -INC OUT C NC SGM8632 OUT A 1 -IN A 2 +IN A 3 -VS 4 SO-8 / MSOP-8 TSSOP-16 / SO-16 Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com REV. B ELECTRICAL CHARACTERISTICS :VS = +5V (At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted) SGM8631/2/3/4 PARAMETER CONDITION TYP +25℃ INPUT CHARACTERISTICS Input Offset Voltage (VOS) Input Bias Current (IB) Input Offset Current (IOS) Common-Mode Voltage Range (VCM) Common-Mode Rejection Ratio(CMRR) Open-Loop Voltage Gain( AOL) Input Offset Voltage Drift (∆VOS/∆T) OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current (IOUT) Closed-Loop Output Impedance POWER-DOWN Turn-On Time Turn-Off Time DISABLE MIN/MAX OVER TEMPERATURE +25℃ 3.5 0℃ to 70℃ 3.9 -40℃ to 85℃ 4.3 -40℃ to 125℃ 4.6 UNITS mV pA pA V 75 90 74 87 74 86 73 79 dB dB dB dB µV/℃ V V 49 45 40 35 mA Ω µs µs 0.8 2 2.5 5.5 2.5 5.5 78 660 2.5 5.5 78 680 2.5 5.5 77 740 V V V V dB µA nA MHz KHz V/µs µs µs nV/ fA/ MIN TYP TYP TYP MAX MIN MIN MAX MIN MAX MAX TYP TYP TYP TYP TYP TYP TYP MIN/ MAX MAX TYP TYP TYP MIN MIN MIN MIN TYP TYP 0.8 1 1 VS = 5.5V VS = 5.5V, VCM = - 0.1V to 4 V VS = 5.5V, VCM = - 0.1V to 5.6 V RL = 600Ω ,Vo = 0.15V to 4.85V RL =10KΩ ,Vo = 0.05V to 4.95V -0.1 to +5.6 90 83 97 108 2.4 RL = 600Ω RL = 10KΩ F = 200KHz, G = 1 0.1 0.015 53 3 4 1.2 DISABLE Voltage-Off Voltage-On DISABLE POWER SUPPLY Operating Voltage Range Power Supply Rejection Ratio (PSRR) Quiescent Current/ Amplifier (IQ) Supply Current when Disabled (SGM8633 only) DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Phase Margin(φO) Full Power Bandwidth(BWP) Slew Rate (SR) Settling Time to 0.1%( tS) Overload Recovery Time NOISE PERFORMANCE Voltage Noise Density (en) Current Noise Density( in) f = 1kHz f = 1kHz 12 3 Hz Hz Vs = +2.5 V to + 5.5 V VCM = (-VS) + 0.5V IOUT = 0 91 470 90 RL = 10KΩ ＜1% distortion, RL = 600Ω G = +1 , 2V Step, RL = 10KΩ G = +1, 2 V Step, RL = 600Ω VIN ·Gain = Vs, RL = 600Ω 6 60 250 3.7 2.1 0.9 80 590 degrees TYP Specifications subject to change without notice. ２ SGM8631/2/3/4 PACKAGE/ORDERING INFORMATION MODEL ORDER NUMBER SGM8631XC5/TR SGM8631 SGM8631XN5/TR SGM8631XS/TR SGM8632 SGM8633 SGM8634 SGM8632XMS/TR SGM8632XS/TR SGM8633XN6/TR SGM8633XS/TR SGM8634XS/TR SGM8634XTS PACKAGE DESCRIPTION SC70-5 SOT23-5 SO-8 MSOP-8 SO-8 SOT23-6 SO-8 SO-16 TSSOP-16 PACKAGE OPTION Tape and Reel, 3000 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 2500 Tape and Reel, 3000 MARKING INFORMATION 8631 8631 SGM8631XS SGM8632XMS SGM8632XS 8633 SGM8633XS SGM8634XS SGM8634XTS ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V- ............................................ 7.5 V Common-Mode Input Voltage .................................... (–VS) – 0.5 V to (+VS) +0.5V Storage Temperature Range..................... –65℃ to +150℃ Junction Temperature.................................................160℃ Operating Temperature Range.................–55℃ to +150℃ Package Thermal Resistance @ TA = 25℃ SC70-5, θJA................................................................ 333℃/W SOT23-5, θJA.............................................................. 190℃/W SOT23-6, θJA.............................................................. 190℃/W SO-8, θJA......................................................................125℃/W MSOP-8, θJA.............................................................. 216℃/W SO-16, θJA..................................................................... 82℃/W TSSOP-16, θJA............................................................ 105℃/W Lead Temperature Range (Soldering 10 sec) .....................................................260℃ ESD Susceptibility HBM................................................................................1500V MM....................................................................................400V NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ３ SGM8631/2/3/4 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted. Closed-Loop Output Voltage Swing 6 5 Output Voltage(Vp-p) 4 3 2 1 0 10 100 1000 Frequency(kHz) 10000 Vs = 5V VIN = 4.9VP-P TA = 25℃ RL = 10KΩ G=1 Output Impedance vs.Frequency 140 120 Output Impedance(Ω) 100 80 60 40 20 0 1 10 100 Frequency(kHz) 1000 10000 G = 100 G = 10 G =1 Vs = 5V Positive Overload Recovery Vs = ±2.5V VIN = 50mV RL = 10KΩ G = 100 Negative Overload Recovery Vs = ±2.5V VIN = 50mV RL = 10KΩ G = 100 2.5V 2.5V 0V 0V 0V 0V -50mV -50mV Time(2µs/div) Time(500ns/div) Large-Signal Step Response Vs = 5V G = +1 CL = 100pF RL = 10KΩ Small-Signal Step Response Vs = 5 V G = +1 CL = 100pF RL = 10KΩ Time(1µs/div) Voltage(50mV/div) Voltage(1V/div) Time(1µs/div) ４ SGM8631/2/3/4 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted. PSRR vs.Frequency 120 Vs = 5V 100 80 60 40 20 0.01 100 80 120 CMRR vs.Frequency Vs = 5V PSRR(dB) CMRR(dB) 60 40 20 0 0.01 0.1 1 10 Frequency(kHz) 100 1000 0.1 1 10 Frequency(kHz) 100 1000 Small-Signal Overshoot vs.Load Capacitance 70 Small-Signal Overshoot(%) 60 50 40 30 20 10 0 1 10 100 Load Capacitance(pF) 1000 Vs = 5V RL = 10kΩ TA = 25℃ G=1 Channel Separation vs.Frequency 140 130 120 110 100 90 0.1 1 10 Frequency(kHz) 100 1000 VS = 5V RL = 620Ω TA = 25℃ G=1 +OS -OS Channel Separation(dB) CMRR vs.Temperature 120 VS = 5.5V 110 100 CMRR(dB) PSRR(dB) 130 PSRR vs.Temperature VCM = - 0.1V to 4 V 120 110 100 90 VS = 2.5V to 5.5V 90 80 VCM = - 0.1V to 5.6V 70 60 -50 -30 -10 10 30 50 70 Temperature(℃) 90 110 130 80 70 -50 -30 -10 10 30 50 70 Temperature(℃) 90 110 130 ５ SGM8631/2/3/4 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted. Supply Current vs.Temperature 650 600 Supply Current( μA) 550 500 450 400 350 300 250 -50 -30 -10 10 30 50 70 Temperature(℃) 90 110 130 V S = 5V VS = 2.5V VS = 3V Shutdown Current(nA) 210 180 150 120 90 60 30 0 Shutdown Current vs.Temperature VS = 5V VS = 3V VS = 2.5V -50 -30 -10 10 30 50 70 Temperature(℃) 90 110 130 Open-Loop Gain vs.Temperature 120 110 100 90 80 70 -50 -30 -10 10 30 50 70 Temperature(℃) 90 110 130 RL = 600Ω RL = 10KΩ Output Voltage(V) 4 3 2 1 0 0 5 Output Voltage Swing vs.Output Current Sourcing Current Open–Loop Gain(dB) VS = 5 V 135℃ 25℃ -50℃ -50℃ 135℃ 25℃ Sinking Current 10 20 30 40 50 60 70 80 Output Current(mA) Output Voltage Swing vs.Output Current 3 Sourcing Current Output Voltage(V) VS = 3 V 2 135℃ 1 25℃ -50℃ Small-Signal Overshoot(%) 60 50 40 30 20 10 0 1 70 Small-Signal Overshoot vs.Load Capacitance Vs = 2.7V RL = 10kΩ TA = 25℃ G=1 +OS -OS Sinking Current 0 0 10 20 30 40 50 60 Output Current(mA) 10 100 Load Capacitance(pF) 1000 ６ SGM8631/2/3/4 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted. Output Impedance vs.Frequency 140 120 Output Impedance(Ω) 100 80 60 40 20 0 1 10 100 1000 Frequency(kHz) 10000 G = 100 G = 10 Vs = 2.7V Closed-Loop Output Voltage Swing 3 2.5 Output Voltage(Vp-p) 2 1.5 1 0.5 0 10 100 1000 Frequency(kHz) 10000 Vs = 2.7V VIN = 2.6VP-P TA = 25℃ RL = 10KΩ G=1 G =1 Large-Signal Step Response Vs = 2.7V G = +1 CL = 100pF RL = 10KΩ Small-Signal Step Response Vs = 2.7V G = +1 CL = 100pF RL = 10KΩ Voltage(500mV/div) Time(1µs/div) Voltage(50mV/div) Time(1µs/div) Channel Separation vs.Frequency 140 Channel Separation(dB) 130 120 110 100 90 0.1 1 10 Frequency(kHz) 100 1000 VS = 2.7V RL = 620Ω TA = 25℃ G=1 1000 Voltage Noise(nV/√Hz) Input Voltage Noise Spectral Density vs.Frequency Vs = 5V 100 10 1 10 100 1000 10000 Frequency(Hz) ７ SGM8631/2/3/4 TYPICAL PERFORMANCE CHARACTERISTICS At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted. Offset Voltage Production Distribution 50 Percent of Amplifiers(%) 45 40 35 30 25 20 15 10 5 0 -3 -2 -1 0 1 2 0.5 1.5 -2.5 -1.5 -0.5 2.5 3 Typical production distribution of packaged units. Offset Voltage(mV) ８ SGM8631/2/3/4 APPLICATION NOTES Driving Capacitive Loads The SGM863x can directly drive 1000pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD. Power-Supply Bypassing and Layout The SGM863x family operates from either a single +2.5V to +5.5V supply or dual ±1.25V to ±2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1µF ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1µF ceramic capacitors. 2.2µF tantalum capacitor can be added for better performance. Good PC board layout techniques optimize performance by decreasing the amount of stray capacitance at the op amp’s inputs and output. To decrease stray capacitance, minimize trace lengths and widths by placing external components as close to the device as possible. Use surface-mount components whenever possible. For the operational amplifier, soldering the part to the board directly is strongly recommended. Try to keep the high frequency big current loop area small to minimize the EMI (electromagnetic interfacing). RISO SGM8631 VOUT CL VIN VDD Figure 1. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 2. It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output. CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop. 10µF 0.1µF VDD 10µF 0.1µF Vn VOUT 10µF Vn SGM8631 VOUT SGM8631 Vp Vp CF RF RISO SGM8631 VSS(GND) 0.1µF VOUT CL RL VSS Figure 3. Amplifier with Bypass Capacitors VIN Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. Grounding A ground plane layer is important for SGM863x circuit design. The length of the current path speed currents in an inductive ground return will create an unwanted voltage noise. Broad ground plane areas will reduce the parasitic inductance. Input-to-Output Coupling To minimize capacitive coupling, the input and output signal traces should not be parallel. This helps reduce unwanted positive feedback. ９ SGM8631/2/3/4 Typical Application Circuits Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp – Vn ) × R2 / R1 + Vref. C R2 R1 VIN SGM8631 R2 Vn Vp R3 R4 Vref Figure 4. Differential Amplifier VOUT R1 SGM8631 VOUT R3=R1//R2 Figure 6. Low Pass Active Filter Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. R2 R1 SGM8631 Vn SGM8631 VOUT Vp SGM8631 R3 R4 Vref Figure 5. Instrumentation Amplifier Low Pass Active Filter The low pass filter shown in Figure 6 has a DC gain of (-R2/R1) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration. １０ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS SC70-5 D e1 e L θ Symbol A A1 A2 Dimensions In Millimeters Min 0.900 0.000 0.900 0.150 0.080 2.000 1.150 2.150 1.200 0.260 0° Dimensions In Inches Min 0.035 0.000 0.035 0.006 0.003 0.079 0.045 0.085 0.047 0.010 0° Max 1.100 0.100 1.000 0.350 0.150 2.200 1.350 2.450 1.400 0.460 8° Max 0.043 0.004 0.039 0.014 0.006 0.087 0.053 0.096 0.055 0.018 8° E1 E b c D L1 b A1 C 0.20 E E1 e e1 0.650TYP 0.525REF 0.026TYP 0.021REF A2 A L L1 θ １１ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS SOT23-5 D b L 0 θ 0.20 Symbol A A1 Dimensions In Millimeters Min 1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0° Dimensions In Inches Min 0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 0.071 0.012 0° Max 1.250 0.100 1.150 0.400 0.200 3.020 1.700 2.950 2.000 0.600 8° Max 0.049 0.004 0.045 0.016 0.008 0.119 0.067 0.116 0.079 0.024 8° E1 A2 b c E L e e1 A1 D C E E1 e e1 0.950TYP 0.700REF 0.037TYP 0.028REF A2 L L1 θ A １２ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS SOT23-6 D e1 e L 0 θ 0.20 Symbol A A1 A2 b c D E E1 Dimensions In Millimeters Min 1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0° Dimensions In Inches Min 0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 0.071 0.012 0° Max 1.250 0.100 1.150 0.400 0.200 3.020 1.700 2.950 2.000 0.600 8° Max 0.049 0.004 0.045 0.016 0.008 0.119 0.067 0.116 0.079 0.024 8° E1 E b A1 L C e e1 L 0.950TYP 0.700REF 0.037TYP 0.028REF A2 A L1 θ １３ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS SO-8 D C Symbol L Dimensions In Millimeters Min Max 1.750 0.250 1.550 0.510 0.250 5.000 4.000 6.300 1.270 8° 1.350 0.100 1.350 0.330 0.190 4.780 3.800 5.800 0.400 0° Dimensions In Inches Min 0.053 0.004 0.053 0.013 0.007 0.188 0.150 0.228 0.016 0° Max 0.069 0.010 0.061 0.020 0.010 0.197 0.157 0.248 0.050 8° A A1 E1 E A2 B C D e θ E E1 e A1 1.270TYP 0.050TYP B A2 L θ A １４ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS MSOP-8 b C Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min Max 0.800 1.200 0.000 0.200 0.760 0.970 0.30 TYP 0.15 TYP 2.900 3.100 0.65 TYP 2.900 3.100 4.700 5.100 0.410 0.650 0° 6° Dimensions In Inches Min Max 0.031 0.047 0.000 0.008 0.030 0.038 0.012 TYP 0.006 TYP 0.114 0.122 0.026 TYP 0.114 0.122 0.185 0.201 0.016 0.026 0° 6° E1 E e D A1 θ L A2 A １５ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS SO-16 D C Symbol A A1 A2 b c D E E1 e L θ E1 E Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 9.800 10.20 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 0° 8° Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.386 0.402 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 0° 8° L θ e A2 A1 b A １６ SGM8631/2/3/4 PACKAGE OUTLINE DIMENSIONS TSSOP-16 A b Symbol E1 E Dimensions In Millimeters Min Max 5.100 4.500 0.300 0.200 6.550 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1° 7° 4.900 4.300 0.190 0.090 6.250 Dimensions In Inches Min Max 0.193 0.169 0.007 0.004 0.246 0.201 0.177 0.012 0.008 0.258 0.043 0.031 0.039 0.001 0.006 0.026 (BSC) 0.020 0.028 0.01(TYP) 1° 7° PIN #1 IDENT. e A2 A C θ D L H A1 A D E b c E1 A A2 A1 e L H θ １７ SGM8631/2/3/4 REVISION HISTORY Location Page 11/06— Data Sheet changed from REV.A to REV.B Added SC70-5 PACKAGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Universal Changes to PRODUCT DESCRIPTION, FEATURES, and PIN CONFIGURATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Updated PACKAGE/ORDERING INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com １８ SGM8631/2/3/4