GP1S36

GP1S36 GP1S36 Photointerrupter for Detecting Tilt Direction ■ Features ■ Outline Dimensions 1. Subminiature (4.0×4.2×3.8mm) (with built-in super compact ball for detecting tilt direction) 2. 2-phase output type 3. Able to detect the tilt direction of both side (±90˚) by the position of rolling ball. 4. High reliability due to non-contact structure (Unit : mm) Internal connection diagram 3 2 PT2 4 PT1 5 1 2 3 ■ Applications Anode Cathode Emitter 4.2 Collector-emitter voltage Output Emitter-collector voltage Collector current Collector Power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature 1 *2 Soldering temperature 2 3.8 Symbol Rating IF 50 VR 6 P 75 VCE1O 35 VCE2O VE1CO 6 VE2CO IC 20 PC 75 Ptot 100 −25 to +85 Topr −40 to +100 Tstg 260 Tsol Tsol 320 (Ta=25˚C) 3.0MIN. ■ Absolute Maximum Ratings Input 5 Emitter Collector 4.0 1. Digital cameras 2. Camcoders Parameter Forward current Reverse voltage Power dissipation 1 4 Unit mA V mW V +0.2 0.15−0.1 *3.05 5 1 4 V mA mW mW ˚C ˚C ˚C ˚C 3 0.4 *1.27 2 *1.27 ❈ Unspecified tolerance : ±0.2mm ❈ The dimensions indicated by * refer to those measured from the lead base. ❈ Burr is not included in the dimensions. Burr's dimensions : 0.15MAX. 1mmMIN. Soldering area *1 For MAX. 5s *2 For MAX. 2s at the position of 0.8mm from the bottomface of resin package by hand soldering. Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ GP1S36 ■ Electro-optical Characteristics Conditions IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA VCE=5V, IF=5mA VCE=5V, IC=100µA RL=1 000Ω IF=10mA, IC=60µA Parameter Forward voltage Symbol VF Input IR Reverse current *3 Output ICEO Collector dark current Collector current IC *4 Leak current ILEAK *3 Coupling Rise time tr Characteristics Response time Fall time tf Collector-emitter saturation voltage VCE(sat) MIN. − − − 60 TYP. 1.2 − − − − − − 50 50 − MAX. 1.4 10 100 360 15 150 150 0.4 *3 Output and coupling characteristics are common to the both phototransistors. *4 Characteristics except leak current is measured at θ=0˚, φ=0˚. Leak current is the output current of transistor when θ=±90˚, φ=0˚ and IC=OFF. ■ Detecting Angle Characteristics −75˚ −15˚ θ −90˚ ON IC1 OFF *5 IC2 +15˚ +75˚ *5 ON +90˚ OFF Device state diagram − + − φ ❈ Conditions : IF=5mA, VCC=5V, φ