GP1S39

GP1S39 GP1S39 Subminiature, Double-phase Output, Wide Gap Photointerrupter ■ Features ■ Outline Dimensions 1. Ultra-compact package 2. PWB mounting type 3. Double-phase phototransistor output type for detecting of rotation direction and count 4. Wide gap between light emitter and detector: 1.5mm 5. Slit width: 0.8mm 6. Detecting pitch: 0.6mm ( Unit : mm ) Internal connection diagram PT1 1 4 PT2 2 3 4.5 Anode Cathode Emitter2 Emitter1 Collector 4.0 (C0.4) 1.5 1.5 B A (0.7) 4.7 3.5 (0.7) 1.5 Center of light path 1 2 3 4 5 5 A' 0.15 +- 0.2 0.1 1. Mouses 2. Cameras Rest of gate (2) ❈ 3.14 5 0.4 ❈ 1.27 1 B-B' section (1.0 ) 4 (0.37) 3 Input Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Output Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature ( Ta = 25˚C ) Symbol IF VR P V CE1O V CE2O V E 1CO V E 2CO Rating 50 6 75 Unit mA V mW 35 V 6 V IC PC P tot T opr T stg Tsol 20 75 100 - 25 to + 85 - 40 to + 100 260 mA mW mW ˚C ˚C ˚C ❈ 1.27 A-A' section Slit width of emitter side (0.8) (0.37) 2 * Tolerance:± 0.2mm * Burr's dimensions: 0.15MAX. * Rest of gate: 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by ❈ refer to those measured from the lead base. * Internal elements are appeared because of thin external mold resin marked 1mm or more ■ Absolute Maximum Ratings 4.0MIN. (C0.3) B' ■ Applications Soldering area *1 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S39 ■ Electro-optical Characteristics ( Ta = 25˚C ) Parameter Forward voltage Reverse current Collector dark current Collector current Collector current ratio Collector-emitter saturation voltage Rise time Response time Fall time Input Output Transfer characteristics Symbol VF IR I CEO IC I C1 /I C2 V CE(sat) tr tf MIN. 130 0.67 - TYP. 1.2 50 50 MAX. 1.4 10 100 520 1.5 0.4 150 150 Fig. 2 Power Dissipation vs. Ambient Temperature 60 120 50 100 Power dissipation P ( mW ) Forward current I F ( mA ) Fig. 1 Forward Current vs. Ambient Temperature Conditions I F = 20mA V R = 3V V CE = 20V V CE = 5V, I F = 4mA V CE = 5V, I F = 4mA I F = 8mA, I C = 50 µ A V CE = 5V, I C = 100 µ A R L = 1 000 Ω 40 30 20 10 P tot P, P c 80 60 40 20 0 - 25 0 25 75 85 50 0 - 25 100 Ambient temperature T a ( ˚C ) 0 25 50 75 85 100 Ambient temperature T a ( ˚C ) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 500 Collector current I C ( mA ) Forward current I F ( mA ) 50˚C 100 VCE = 5V T a = 25˚C 1.0 25˚C 0˚C - 25˚C T a = 75˚C 200 50 20 10 5 0.8 0.6 0.4 0.2 2 1 0 0 0.5 1 1.5 2 Forward voltage VF ( V ) 2.5 3 0 5 Forward current I F ( mA ) 10 Unit V µA nA µA V µs µs GP1S39 Fig. 5 Collector Current vs. Collector-emitter Voltage Fig. 6 Collector Current vs. Ambient Temperature 400 T a = 25˚C VCE=5V IF=4mA 4.0 I F = 50mA 40mA 3.0 30mA 2.0 300 Collector current I C (µ A) Collector current I C ( mA ) 5.0 20mA 200 100 10mA 1.0 4mA 0 0 2 4 6 8 - 25 10 0 Collector-emitter voltage V CE ( V ) 50 75 85 Fig. 8 Collector Dark Current vs. Ambient Temperature Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 10 - 6 0.16 I F = 8mA I C= 50 m A V CE = 20V 5 0.14 Collector dark current I CEO (A) Collector-emitter saturation voltage VCE( sat) (V ) 25 Ambient temperature T a ( ˚C ) 0.12 0.10 0.08 2 10 - 7 5 2 10 - 8 5 2 10 - 9 5 0.06 2 10 - 25 0 25 50 75 85 - 10 0 25 Ambient temperature Ta ( ˚C ) 50 75 100 Ambient temperature T a ( ˚C ) Fig. 9 Response Time vs. Load Resistance 500 Response time ( ms ) V CE = 5V I C = 100mA T a = 25˚C tr Test Circuit for Response Time tf 100 td ts 10 Input VCC Input RD RL Output Output 10% 90% td ts tr 1 0.5 1 10 Load resistance RL ( kΩ ) 50 tf GP1S39 90 Shield 70 I F = 4mA V CE = 5V T a = 25˚C 50 40 30 80 I F = 4mA V CE = 5V T a = 25˚C 70 60 50 40 30 20 10 10 2 3 4 Shield distance L ( mm ) ● 90 20 1 Please refer to the chapter “Precautions for Use”. L= 0 100 L 80 60 - Shield + + L= 0 L - 100 Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) Relative collector current ( % ) Relative collector current ( % ) Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) 0.5 1 1.5 Shield distance L ( mm ) 2 Application Circuits NOTICE ●The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. ●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. ●Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). ●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. ●If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. ●This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. 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