GP2L24J0000F

GP2L24J0000F GP2L24J0000F Detecting Distance : 0.7mm Darlington Phototransistor Output Compact Reflective Photointerrupter ■ Description GP2L24J0000F is a compact-package, darlington phototransistor output, reflective photointerrupter, with emitter and detector facing the same direction in a molding that provides non-contact sensing. The compact package series is a result of unique technology, combing transfer and injection molding, that also blocks visible light to minimize false detection. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. Detection of object presence or motion. 2. Example : printer, optical storage ■ Features 1. Reflective with Darlington Phototransistor Output 2. Highlights : • Compact Size 3. Key Parameters : • Optimal Sensing Distance : 0.7mm • Package : 4×3×1.7mm • Visible light cut resin to prevent 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A02301EN Date Oct. 3. 2005 © SHARP Corporation GP2L24J0000F ■ Internal Connection Diagram Top view 4 3 1 2 1 Anode 2 Emitter 3 Collector 4 Cathode ■ Outline Dimensions ( 0.2 ) Emitter center ( 0.4 ) Detector center (Unit : mm) Top view 4 3 C0.7 1 1.75 2 ∗4±0.2 4+0.2 −0.1 0.75 1.7 3+0.2 −0.1 4−0.4+0.2 −0.1 4−0.15+0.2 −0.1 (4) ±15˚ Date code mark θ θ : 0 to 20˚ • Tolerance : ±0.15mm • ( ) : Reference dimensions • The dimensions shown do not include those of burrs. Burr's dimension : 0.15mm MAX. • The dimensions indicated by ∗ refer to those measured from the lead bending part. Product mass : approx. 0.04g Plating material : SnCu (Cu : TYP. 2%) +0.1 3.5−0 Sheet No.: D3-A02301EN 2 GP2L24J0000F Date code (Symbol) January July February August March September April October May November June December Rank mark There is no rank indicator. Country of origin Japan Sheet No.: D3-A02301EN 3 GP2L24J0000F ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ Symbol Rating IF 50 VR 6 PD 75 VCEO 35 VECO 6 50 IC 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C ) Unit mA V mW V V mA mW mW ˚C ˚C ˚C Soldering area 1 For 5s or less. ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current ∗2 Collector current Transfer ∗3 Leak current characRise time Response time teristics Fall time ∗ 1mm or more Symbol VF IR ICEO IC ILEAK tr tf Condition IF=20mA VR=6V VCE=10V IF=4mA, VCE=2V IF=4mA, VCE=5V VCE=2V, IC=10μA, RL=100Ω, d=1mm MIN. − − − 0.5 − − − TYP. 1.2 − − 3 − 80 70 (Ta=25˚C ) MAX. Unit 1.4 V 10 μA 1 nA 15 mA 5 nA 400 μs 400 2 The condition and arrangement of the reflective object are shown below. The rank splitting of collector current (IC) shall be executed according to the table below. Rank A B C Collector current, IC [mA] (IF=4mA, VCE=2V) 0.5 to 1.9 1.45 to 5.4 4 to 15 Package sleeve color Yellow Transparent Green ∗ 3 Without reflective object. ● Test Arrangement for Collector Current Al evaporation d=1mm glass plate Sheet No.: D3-A02301EN 4 GP2L24J0000F ■ Model Line-up Model No. GP2L24J0000F GP2L24BJ000F GP2L24CJ000F GP2L24ABJ00F GP2L24BCJ00F ∗ Rank A, B or C B C A or B B or C Collector current IC[mA] (IF=4mA, VCE=2V, Ta=25˚C) 0.5 to 15 1.45 to 5.4 4 to 15 0.5 to 5.4 1.45 to 15 The ratio of each rank can not be guaranteed. Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D3-A02301EN 5 GP2L24J0000F Fig.1 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) 40 30 20 10 0 −25 Fig.2 Collector Power Dissipation vs. Ambient Temperature 120 100 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 Ptot Collector power dissipation P (mW) P, Pc 0 25 50 75 85 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Peak Forward Current vs. Duty Ratio Pulse width≤100μs Ta = 25˚C Peak forward current IFM (mA) Fig.4 Forward Current vs. Forward Voltage Ta=75˚C 50˚C Forward current IF (mA) 100 1 000 25˚C 0˚C −25˚C 10 100 10 10−3 1 10−2 Duty ratio 10−1 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V) Fig.5 Collector Current vs. Forward Current 25 VCE =2V Ta =25˚C 20 Collector current IC (mA) Fig.6 Collector Current vs. Collector-emitter Voltage 16 Ta = 25˚C 14 Collector current IC (mA) 12 10 8 6 4 2 7mA PC (MAX.) IF = 15mA 10mA 15 10 5 4mA 2mA 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 12 0 0 2.5 5.5 7.5 10 Forward current IF (mA) 12.5 15 0 Sheet No.: D3-A02301EN 6 GP2L24J0000F Fig.7 Relative Collector Current vs. Ambient Temperature 150 125 Relative collector current (%) 100 75 50 25 0 −25 IF = 4mA VCE= 5V Fig.8 Collector Dark Current vs. Ambient Temperature 10−4 10 Collector dark current ICEO (A) −5 VCE= 10V 10−6 10−7 10−8 10−9 10−10 10−11 −25 0 25 50 75 Ambient temperature Ta (˚C) 100 0 25 50 75 Ambient temperature Ta (˚C) 100 Fig.9 Response Time vs. Load Resistance 1 000 V CE=2V IC=10mA T a =25˚C Fig.10 Test Circuit for Response Time Reflector Plate VCC RL Output Input Output 10% Response time tr, tf, td, ts (μs) 100 tr tf Input RD 10 td ts td tr 90% ts tf 1 0.1 1 10 100 1 000 Load resistance RL (KΩ) 10 000 Fig.11 Relative Collector Current vs. Distance (Reference value) 100 IF = 4mA VCE = 2V Ta = 25˚C Fig.12 Detecting Position Characteristics (1) 100 IF=4mA VCE=2V d=1mm Ta=25˚C Relative collector current (%) 60 Relative collector current (%) 0 1 2 4 5 3 Distance between sensor and Al evaporation glass d (mm) 80 80 60 40 40 20 20 0 0 −1 0 1 2 3 4 5 6 7 Card moving distance L (mm) Sheet No.: D3-A02301EN 7 GP2L24J0000F Fig.13 Detecting Position Characteristics (2) 100 IF=4mA VCE=2V d=1mm Ta=25˚C Fig.14 Test Condition for Distance & Detecting Position Characteristics Al evaporation glass Correspond to Fig.11 d Correspond to Fig.13 Test condition IF=4mA VCE=2V d=1mm OMS card Black 1mm White d Black 1mm Relative collector current (%) 80 60 Correspond to Fig.12 Test condition IF=4mA VCE=2V d=1mm OMS card White d 40 20 0 −2 −1 0 1 2 3 4 5 6 − L=0 + Card moving distance L (mm) − L=0 + Fig.15 Frequency Response 5 IF=10mA VCE=2V Ta=25˚C Fig.16 Spectral Sensitivity (Detecting side) 100 Ta=25˚C 0 Voltage gain Av (dB) 80 Relative sensitivity ( % ) 106 −5 RL=1kΩ −10 100Ω 10Ω 60 40 −15 20 −20 102 103 104 Frequency f (kHz) 105 0 600 700 800 900 1 000 1 100 1 200 Wavelength λ (nm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A02301EN 8 GP2L24J0000F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Distance characteristic Please refer to Fig.11 (Relative collector current vs. Distance) to set the distance of the photointerrupter and the object. This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Phototransister Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 80 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polyphenylene Lead frame 42Alloy Lead frame plating SnCu plating Sheet No.: D3-A02301EN 9 GP2L24J0000F ■ Manufacturing Guidelines ● Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A02301EN 10 GP2L24J0000F ■ Package specification ● Sleeve package Package materials Sleeve : Polystyrene Stopper : Styrene-Butadiene Package method MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 40 sleeves in one case. Color of sleeve Rank classification is distinguished by the color of the sleeve as shown in the table below. But the ratio of each rank can not be guaranteed. Rank A B C Color of sleeve Yellow Transparent Green Sheet No.: D3-A02301EN 11 GP2L24J0000F ■ Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. · Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. · Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). · If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. · This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [H148] Sheet No.: D3-A02301EN 12