LZ2314HJ

LZ2313H5/LZ2314HJ LZ2313H5/ LZ2314HJ DESCRIPTION The LZ2313H5/LZ2314HJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 270 000 pixels (542 horizontal x 492 vertical), the sensor provides a stable high-resolution color (LZ2313H5)/B/W (LZ2314HJ) image. OD 1 ØRS 2 RD 3 1/3-type CCD Area Sensors with 270 k Pixels PIN CONNECTIONS 16-PIN SHRINK-PITCH WDIP TOP VIEW 16 GND 15 ØV4 14 ØV3 13 ØV2 12 ØV1 11 PW 10 OFD 9 T1 FEATURES • Number of effective pixels : 512 (H) x 492 (V) • Number of optical black pixels – Horizontal : 2 front and 28 rear • Pixel pitch : 9.6 µm (H) x 7.5 µm (V) • Mg, G, Cy, and Ye complementary color filters (For LZ2313H5) • Low fixed-pattern noise and lag • No burn-in and no image distortion • Blooming suppression structure • Built-in output amplifier • Variable electronic shutter (1/60 to 1/10 000 s) • Compatible with NTSC standard (LZ2313H5)/ EIA standard (LZ2314HJ) • Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm OS 4 NC1 5 NC2 6 ØH2 7 ØH1 8 (WDIP016-N-0500C) PRECAUTIONS • The exit pupil position of lens should be more than 25 mm (LZ2313H5)/20 mm (LZ2314HJ) from the top surface of the CCD. • Refer to "PRECAUTIONS FOR CCD AREA SENSORS" for details. COMPARISON TABLE TV standard Characteristics LZ2313H5 LZ2314HJ NTSC standard (Color) EIA standard (B/W) Refer to each following specification. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 LZ2313H5/LZ2314HJ PIN DESCRIPTION SYMBOL RD OD OS ØRS ØV1, ØV2, ØV3, ØV4 ØH1, ØH2 OFD PW GND T1 NC1, NC2 PIN NAME Reset transistor drain Output transistor drain Output signals Reset transistor clock Vertical shift register clock Horizontal shift register clock Overflow drain P-well Ground Test pin No connection ABSOLUTE MAXIMUM RATINGS PARAMETER Output transistor drain voltage Reset transistor drain voltage Overflow drain voltage Test pin, T1 Reset gate clock voltage Vertical shift register clock voltage Horizontal shift register clock voltage Voltage difference between P-well and vertical clock Storage temperature Ambient operating temperature SYMBOL VOD VRD VOFD VT1 VØRS VØV VØH VPW-VØV TSTG TOPR RATING 0 to +18 0 to +18 0 to +55 0 to +18 –0.3 to +18 –9.0 to +18 –0.3 to +18 –27 to 0 –40 to +85 –20 to +70 (TA = +25 ˚C) UNIT V V V V V V V V ˚C ˚C 1 NOTE NOTE : 1. The OFD clock ØOFD is excluded. 2 LZ2313H5/LZ2314HJ RECOMMENDED OPERATING CONDITIONS PARAMETER Ambient operating temperature Output transistor drain voltage Reset transistor drain voltage Overflow drain voltage Ground P-well voltage Test pin, T1 LOW level Vertical shift register clock INTERMEDIATE level HIGH level Horizontal shift register clock Reset gate clock LOW level HIGH level LOW level HIGH level LZ2313H5 LZ2314HJ When DC is applied When pulse is applied p-p level SYMBOL TOPR VOD VRD VOFD VØOFD GND VPW VT1 VØV1L, VØV2L VØV3L, VØV4L VØV1I, VØV2I VØV3I, VØV4I VØV1H, VØV3H VØH1L, VØH2L VØH1H, VØH2H VØRSL VØRSH fØV1, fØV2 fØV3, fØV4 fØH1, fØH2 fØRS 14.5 –0.05 4.7 4.5 0.0 VRD – 8.5 15.73 9.53 9.53 –8.5 MIN. 14.5 5.0 21.5 0.0 –9.0 VOD –8.0 0.0 15.0 0.0 5.0 17.0 0.05 6.0 VRD – 13.0 9.5 –7.5 VØVL TYP. 25.0 15.0 VOD 19.0 MAX. 16.0 UNIT ˚C V V V V V V V V V V V V V V kHz MHz MHz 1 2 NOTE Vertical shift register clock frequency Horizontal shift register clock frequency Reset gate clock frequency NOTES : • Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF. 1. When DC voltage is applied, shutter speed is 1/60-second. 2. When pulse is applied, shutter speed is less than 1/60-second. * To apply power, first connect GND and then turn on VOFD. After turning on VOFD, turn on PW first and then turn on other powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied. 3 LZ2313H5/LZ2314HJ CHARACTERISTICS FOR LZ2313H5 (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage Photo response non-uniformity Saturation output voltage Dark output voltage Dark signal non-uniformity Sensitivity Smear ratio Image lag Blooming suppression ratio Output transistor drain current Output impedance Vector breakup Line crawling Luminance flicker SYMBOL VO PRNU VSAT VDARK DSNU R SMR AI ABL IOD RO 100 4.0 350 8.0 5.0 3.0 2.0 mA $ ˚, % % % 11 12 13 440 MIN. TYP. 150 MAX. 15 700 0.3 0.6 600 –81 3.0 2.0 –76 1.0 UNIT mV % mV mV mV mV dB % NOTE 2 3 4 1, 5 1, 6 7 8 9 10 NOTES : • VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The output voltage measured at the carrier peak when the carrier signal reaches maximum. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions. 12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions. 13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions. 4 LZ2313H5/LZ2314HJ CHARACTERISTICS FOR LZ2314HJ (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage Photo response non-uniformity Saturation output voltage Dark output voltage Dark signal non-uniformity Sensitivity Smear ratio Image lag Blooming suppression ratio Output transistor drain current Output impedance SYMBOL VO PRNU VSAT VDARK DSNU R SMR AI ABL IOD RO 100 4.0 350 8.0 mA $ 560 MIN. TYP. 150 MAX. 10 700 0.3 0.6 800 –90 3.0 2.0 –76 1.0 UNIT mV % mV mV mV mV dB % NOTE 2 3 4 1, 5 1, 6 7 8 9 10 NOTES : • VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 5 LZ2313H5/LZ2314HJ PIXEL STRUCTURE OPTICAL BLACK (2 PIXELS) 512 (H) x 492 (V) OPTICAL BLACK (28 PIXELS) 1 pin COLOR FILTER ARRAY (FOR LZ2313H5) (1, 492) (512, 492) Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye G Cy Mg Cy ODD field Mg Ye G Ye Mg Ye G Cy Mg Cy G Cy Mg Ye G Ye Mg Ye G Cy Mg Cy G Cy Mg Ye G Ye Mg Ye G Cy Mg Cy G Cy Mg Ye G Ye Mg Ye G Cy Mg Cy G Cy Mg Ye G Ye Mg Ye (512, 1) EVEN field G Cy (1, 1) 6 LZ2313H5/LZ2314HJ TIMING CHART (ODD FIELD) HD VD ØV1 ØV2 ØV3 ØV4 ØOFD 484 486 488 490 492 + + + + 485 487 489 491 1 + 2 3 + 4 5 + 6 7 + 8 9 + 10 11 + 12 VERTICAL TRANSFER TIMING Shutter speed 1/2 000 s OS (EVEN FIELD) HD VD ØV1 ØV2 ØV3 ØV4 ØOFD 483 485 487 489 491 + + + + + 484 486 488 490 492 1 2 + 3 4 + 5 6 + 7 8 + 9 10 + 11 OS HORIZONTAL TRANSFER TIMING 606, 1 HD ØH1 ØH2 ØRS OS …512 OB (28) 29 ØV1 39 ØV2 24 ØV3 34 ØV4 62 ØOFD 72 64 54 59 49 60 OB (2) OUTPUT (512) 1πππππππ 7 LZ2313H5/LZ2314HJ (ODD FIELD) HD ØV1 ØV2 ØV3 ØV4 24 34 54 64 180 1 29 49 39 59 161 60 READOUT TIMING 606, 1 242 290 449 290 338 34 29 49 39 59 54 64 60 (EVEN FIELD) HD ØV1 ØV2 ØV3 ØV4 24 34 54 64 180 290 338 450 54 64 1 29 49 39 59 161 60 242 290 59 606, 1 60 8 VOD + 1 M$ + 100 $ 1 000 pF 1 000 pF 0.1 µF 100 k$ + + V4 V2 VL OS RD ØH1 ØH2 ØRS NC2 NC1 V1A V1B V3A V3B OD NC POFD VMa VMb VH ØRS ØH2 ØH1 CCD OUT VL (VPW) SYSTEM CONFIGURATION EXAMPLE VH 12 11 10 9 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 + 9 LR36685 9 VOFDH V4X + V3X V1X V2X VDD GND VH1BX VH3AX VH1AX VH3BX OFDX LZ2313H5 or LZ2314HJ 10 11 12 13 14 15 16 PW OFD T1 ØV1 ØV2 ØV3 ØV4 GND 13 14 15 16 17 18 19 20 21 22 23 24 V4X VH3AX +5 V V3X VH1AX V1X V2X OFDX LZ2313H5/LZ2314HJ PACKAGES FOR CCD AND CMOS DEVICES PACKAGE 16 WDIP (WDIP016-N-0500C) 0.60±0.60 7.00±0.15 1.40±0.60 16 Center of effective imaging area and center of package (◊ : Lid's size) 9 1.66±0.10 CCD Package (Cerdip) Glass Lid (Unit : mm) 6.20±0.15 11.20±0.10 (◊) θ CCD 12.40±0.15 0.04 Cross Section A-A' 1 11.20±0.10 (◊) 3.42±0.25 2.60±0.20 14.00±0.15 8 Rotation error of die : ¬ = 1.5˚MAX. 0.80±0.05 (◊) 0.25±0.10 12.70±0.25 1.27±0.25 A 5.24MAX. 3.90±0.30 P-1.78TYP. 0.46TYP. 0.90TYP. A' 0.25 M 2.63TYP. 10 1.05MIN. PRECAUTIONS FOR CCD AREA SENSORS PRECAUTIONS FOR CCD AREA SENSORS 1. Package Breakage In order to prevent the package from being broken, observe the following instructions : 1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when mounting, handling, or transporting. ø Avoid giving a shock to the package. Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed. 2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part. (In the case of ceramic packages) – The leads of the package are fixed with low melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead. Low melting point glass Lead (In the case of plastic packages) – The leads of the package are fixed with package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead. Glass cap Package Lead Fixed Stand-off 3) When mounting the package on the housing, be sure that the package is not bent. – If a bent package is forced into place between a hard plate or the like, the package may be broken. 4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could deteriorate. Therefore, ø Do not hit the glass cap. ø Do not give a shock large enough to cause distortion. ø Do not scrub or scratch the glass surface. – Even a soft cloth or applicator, if dry, could cause dust to scratch the glass. 2. Electrostatic Damage Fixed Stand-off As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD : 1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side. 2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead. 11 PRECAUTIONS FOR CCD AREA SENSORS 3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or plastic. b. do not attach any tape or labels. c. do not clean the glass surface with dustcleaning tape. 4) When storing or transporting the device, put it in a container of conductive material. ø The contamination on the glass surface should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only. – Frequently replace the applicator and do not use the same applicator to clean more than one device. ◊ Note : In most cases, dust and contamination are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device. 3. Dust and Contamination Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions : 1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.) 2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown off with an ionized air blower. For antielectrostatic measures, however, ground all the leads on the device before blowing off the dust. 4. Other 1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron. 2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD. 3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters. 12