LZ2325A

LZ2325A/LZ2326AR LZ2325A/ LZ2326AR DESCRIPTION The LZ2325A/LZ2326AR are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices) driven by dual-power-supply. With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution color (LZ2325A)/ B/W (LZ2326AR) normal or mirror image. Dual-power-supply (5 V/12 V) Operation 1/3-type CCD Area Sensors with 320 k Pixels PIN CONNECTIONS 16-PIN SHRINK-PITCH WDIP TOP VIEW ØRS 1 RD 2 GND 3 OS 4 16 T1 15 OFD 14 ØTG 13 ØV2 12 ØV1 11 ØV4 10 ØV3 9 ØH1 FEATURES • Number of effective pixels : 512 (H) x 582 (V) • Number of optical black pixels – Horizontal : 2 front and 28 rear • Pixel pitch : 9.6 µm (H) x 6.3 µm (V) • Mg, G, Cy, and Ye complementary color filters (For LZ2325A) • Low fixed-pattern noise and lag • No burn-in and no image distortion • Blooming suppression structure • Built-in output amplifier • Built-in pulse mix circuit • Built-in overflow drain voltage circuit and reset gate voltage circuit • Variable electronic shutter (1/50 to 1/10 000 s) • Normal or mirror image output available from common output pin • Compatible with PAL standard (LZ2325A)/ CCIR standard (LZ2326AR) • Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm OD 5 ØH2B 6 ØH2 7 ØH1B 8 (WDIP016-N-0500C) PRECAUTIONS • The exit pupil position of lens should be more than 25 mm (LZ2325A)/20 mm (LZ2326AR) from the top surface of the CCD. • Refer to "PRECAUTIONS FOR CCD AREA SENSORS" for details. COMPARISON TABLE TV standard Characteristics LZ2325A PAL standard (Color) LZ2326AR CCIR standard (B/W) Refer to each following specification. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 LZ2325A/LZ2326AR PIN DESCRIPTION SYMBOL RD OD OS ØRS ØV1, ØV2, ØV3, ØV4 ØH1, ØH2, ØH1B, ØH2B ØTG OFD GND T1 PIN NAME Reset transistor drain Output transistor drain Output signals Reset transistor clock Vertical shift register clock Horizontal shift register clock Transfer gate clock Overflow drain Ground Test pin 1 2 3 1 NOTE NOTES : 1. ØRS, OFD : Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly. When not using electronic shutter, connect OFD to GND through a 0.1 µF capacitor and a 1 M$ resistor. 2. ØV1-ØV4 : Input the clock through a 0.1 µF capacitor. 3. ØTG : Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE". ABSOLUTE MAXIMUM RATINGS PARAMETER Output transistor drain voltage Reset transistor drain voltage Overflow drain voltage Test pin, T1 Reset gate clock voltage Vertical shift register clock voltage Horizontal shift register clock voltage Transfer gate clock voltage Storage temperature Ambient operating temperature SYMBOL VOD VRD VOFD VT1 VØRS VØV VØH VØTG TSTG TOPR RATING 0 to +15 0 to +15 Internal output 0 to +15 Internal output 0 to +7.5 –0.3 to +7.5 –0.3 to +15 –40 to +85 –20 to +70 (TA = +25 ˚C) UNIT V V V V V V V V ˚C ˚C NOTE 1 2 NOTES : 1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is applied below 13 Vp-p. 2. Do not connect to DC voltage directly. When ØRS is connected to GND, connect VOD to GND. Reset gate clock is applied below 8 Vp-p. 2 LZ2325A/LZ2326AR RECOMMENDED OPERATING CONDITIONS PARAMETER Ambient operating temperature Output transistor drain voltage Reset transistor drain voltage Overflow drain clock Ground Test pin, T1 Transfer gate clock Vertical shift register clock Horizontal shift register clock Reset gate clock LOW level HIGH level p-p level LOW level HIGH level p-p level p-p level SYMBOL TOPR VOD VRD VØOFD GND VT1 VØTGL VØTGH VØV1, VØV2 VØV3, VØV4 VØH1L, VØH2L VØH1BL, VØH2BL VØH1H, VØH2H VØH1BH, VØH2BH VØRS fØV1, fØV2 fØV3, fØV4 fØH1, fØH2 fØH1B, fØH2B fØRS tw1, tw2 5.0 –0.05 12.0 4.7 –0.05 4.7 4.5 12.0 MIN. 12.0 TYP. 25.0 12.5 VOD 12.5 0.0 VOD 0.0 12.5 5.0 0.0 5.0 5.0 15.63 9.66 9.66 10.0 18.0 0.05 13.0 5.5 0.05 5.5 5.5 13.0 MAX. 13.0 UNIT ˚C V V V V V V V V V V V kHz MHz MHz ns 2 1 1 1 NOTE Vertical shift register clock frequency Horizontal shift register clock frequency Reset gate clock frequency Horizontal shift register clock phase NOTES : 1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly. 2. ØH1, ØH2 ØH1B, ØH2B : Normal image output mode ØH1B, ØH2B : Mirror image output mode tw1 tw2 * To apply power, first connect GND and then turn on VOD and then turn on other powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied. 3 LZ2325A/LZ2326AR CHARACTERISTICS FOR LZ2325A (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage Photo response non-uniformity Saturation output voltage Dark output voltage Dark signal non-uniformity Sensitivity Smear ratio Image lag Blooming suppression ratio Output transistor drain current Output impedance Vector breakup Line crawling Luminance flicker SYMBOL VO PRNU VSAT VDARK DSNU R SMR AI ABL IOD RO 1 000 4.0 400 8.0 10.0 3.0 2.0 mA $ ˚, % % % 11 12 13 420 MIN. TYP. 150 MAX. 15 550 0.5 0.5 600 –110 –90 1.0 UNIT mV % mV mV mV mV dB % NOTE 2 3 4 1, 5 1, 6 7 8 9 10 NOTES : • Within the recommended operating conditions of VOD, VOFD of the internal output satisfies with ABL larger than 1 000 times exposure of the standard exposure conditions, and VSAT larger than 550 mV. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions. 12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions. 13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions. 4 LZ2325A/LZ2326AR CHARACTERISTICS FOR LZ2326AR (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage Photo response non-uniformity Saturation output voltage Dark output voltage Dark signal non-uniformity Sensitivity Smear ratio Image lag Blooming suppression ratio Output transistor drain current Output impedance SYMBOL VO PRNU VSAT VDARK DSNU R SMR AI ABL IOD RO 1 000 4.0 400 8.0 mA $ 630 MIN. TYP. 150 MAX. 15 550 0.5 0.5 900 –110 –90 1.0 UNIT mV % mV mV mV mV dB % NOTE 2 3 4 1, 5 1, 6 7 8 9 10 NOTES : • Within the recommended operating conditions of VOD, VOFD of the internal output satisfies with ABL larger than 1 000 times exposure of the standard exposure conditions, and VSAT larger than 550 mV. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 5 LZ2325A/LZ2326AR PIXEL STRUCTURE OPTICAL BLACK (2 PIXELS) COLOR FILTER ARRAY (FOR LZ2325A) (1, 582) yy ,, yy ,, yy ,, yy ,, yy ,, yy ,, Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G 512 (H) x 582 (V) yyy ,,, yyy ,,, yyy ,,, yyy ,,, yyy ,,, yyy ,,, Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G OPTICAL BLACK (28 PIXELS) (512, 582) Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Ye Mg Ye G 1st, 3rd field Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G Ye Mg Ye G Ye Mg Cy G Cy Mg Cy G (512, 1) 2nd, 4th field Ye Mg (1, 1) 6 LZ2325A/LZ2326AR TIMING CHART (1st, 3rd FIELD) 623 HD VD ØV1 ØV2 ØV3 ØV4 ØTG 580 582 + 581 1 + 2 3 + 4 5 + 6 7 + 8 VERTICAL TRANSFER TIMING 625 1 6 20 22 OS (2nd, 4th FIELD) 311 HD VD ØV1 ØV2 ØV3 ØV4 ØTG 579 581 + + 580 582 1 2 + 3 4 + 5 6 + 7 318 332 OS HORIZONTAL TRANSFER TIMING 618, 1 HD ØH1 ØH2 ØRS OS π512 OB (28) 29 ØV1 39 ØV2 24 ØV3 34 ØV4 62 ØOFD 72 64 54 59 49 PRE SCAN (4) OB (2) OUTPUT (512) 1π 24 96.5 60 7 LZ2325A/LZ2326AR (1st, 3rd FIELD) HD ØV1 ØV2 ØV3 ØV4 ØTG 24 1 60 HORIZONTAL TRANSFER TIMING 618, 1 60 29 49 39 59 54 34 242 25.07 µs (242 bits) 338 64 9.95 µs (96 bits) 64.00 µs (618 bits) (2nd, 4th FIELD) HD ØV1 ØV2 ØV3 ØV4 ØTG 25.07 µs (242 bits) 242 338 24 34 1 60 29 49 39 59 54 64 618, 1 60 9.95 µs (96 bits) 64.00 µs (618 bits) 8 LZ2325A/LZ2326AR (1st, 3rd FIELD) 623 HD VD ØV1 ØV2 ØV3 ØV4 ØTG 578 580 582 + + 579 581 VERTICAL TRANSFER TIMING 625 1 6 20 22 1 + 2 3 + 4 5 + 6 OS (2nd, 4th FIELD) 311 HD VD ØV1 ØV2 ØV3 ØV4 ØTG 577 579 581 + + + 578 580 582 1 2 + 3 4 + 5 318 332 OS HORIZONTAL TRANSFER TIMING 618, 1 HD ØH1 ØH2 ØRS OS ππππ1 4 70.5 60 OB (2) PRE SCAN (4) OB (28) OUTPUT (512) 512π 9 ØV1 19 ØV2 4 ØV3 14 ØV4 29 39 34 44 42 52 ØOFD 9 LZ2325A/LZ2326AR (1st, 3rd FIELD) HD ØV1 ØV2 ØV3 ØV4 ØTG 4 1 60 HORIZONTAL TRANSFER TIMING 618, 1 9 29 19 39 34 24 222 23.00 µs (222 bits) 318 44 60 9.95 µs (96 bits) 64.00 µs (618 bits) (2nd, 4th FIELD) HD ØV1 ØV2 ØV3 ØV4 ØTG 23.00 µs (222 bits) 222 318 4 14 1 9 29 19 39 34 44 60 618, 1 60 9.95 µs (96 bits) 64.00 µs (618 bits) 10 0.1 µF 10 $ 0.1 µF 0.1 µF 0.1 µF 1 M$ 1 000 pF ØH1 ØV3 ØV2 ØV1 ØV4 ØTG OFD T1 ØV3 ØV2 ØV1 ØV4 TGX OFDX 0.47 µF 10 $ • Example of drive circuit with LR38580 driver IC. 16 15 14 13 12 11 10 (*1) (*3) (*2) 9 0.01 µF SYSTEM CONFIGURATION EXAMPLE ØRS (*1) 1 M$ LZ2325A or LZ2326AR 1 RD OS OD ØRS ØH2B GND 11 2 3 4 5 6 7 ØH2 8 ØH1B VOD 2SC4627 1 k$ (*1) ØRS, OFD : Use the circuit parameter indicated in this circuit example, and do not connect to DC voltage directly. When not using electronic shutter, connect OFD to GND through a 0.1 µF capacitor and a 1 M$ resistor. (*2) ØV1-ØV4 : Input the clock through a 0.1 µF capacitor. (*3) ØTG : Use the circuit parameter indicated in this circuit example. CCD OUT ØH1 ØH1B ØH2 ØH2B LZ2325A/LZ2326AR PACKAGES FOR CCD AND CMOS DEVICES PACKAGE 16 WDIP (WDIP016-N-0500C) 0.60±0.60 7.00±0.15 1.40±0.60 16 Center of effective imaging area and center of package (◊ : Lid's size) 9 1.66±0.10 CCD Package (Cerdip) Glass Lid (Unit : mm) 6.20±0.15 11.20±0.10 (◊) θ CCD 12.40±0.15 0.04 Cross Section A-A' 1 11.20±0.10 (◊) 3.42±0.25 2.60±0.20 14.00±0.15 8 Rotation error of die : ¬ = 1.5˚MAX. 0.80±0.05 (◊) 0.25±0.10 12.70±0.25 1.27±0.25 A 5.24MAX. 3.90±0.30 P-1.78TYP. 0.46TYP. 0.90TYP. A' 0.25 M 2.63TYP. 12 1.05MIN. PRECAUTIONS FOR CCD AREA SENSORS PRECAUTIONS FOR CCD AREA SENSORS 1. Package Breakage In order to prevent the package from being broken, observe the following instructions : 1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when mounting, handling, or transporting. ø Avoid giving a shock to the package. Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed. 2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part. (In the case of ceramic packages) – The leads of the package are fixed with low melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead. Low melting point glass Lead (In the case of plastic packages) – The leads of the package are fixed with package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead. Glass cap Package Lead Fixed Stand-off 3) When mounting the package on the housing, be sure that the package is not bent. – If a bent package is forced into place between a hard plate or the like, the package may be broken. 4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could deteriorate. Therefore, ø Do not hit the glass cap. ø Do not give a shock large enough to cause distortion. ø Do not scrub or scratch the glass surface. – Even a soft cloth or applicator, if dry, could cause dust to scratch the glass. 2. Electrostatic Damage Fixed Stand-off As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD : 1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side. 2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead. 13 PRECAUTIONS FOR CCD AREA SENSORS 3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or plastic. b. do not attach any tape or labels. c. do not clean the glass surface with dustcleaning tape. 4) When storing or transporting the device, put it in a container of conductive material. ø The contamination on the glass surface should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only. – Frequently replace the applicator and do not use the same applicator to clean more than one device. ◊ Note : In most cases, dust and contamination are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device. 3. Dust and Contamination Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions : 1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.) 2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown off with an ionized air blower. For antielectrostatic measures, however, ground all the leads on the device before blowing off the dust. 4. Other 1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron. 2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD. 3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters. 14