PC353T
PC353T
Mini-flat Package
Includes Base Terminal
Connection Photocoupler
■ Description
■ Agency approvals/Compliance
PC353T contains an IRED optically coupled to a
phototransistor.
It is packaged in a 5-pin Mini-flat with Base terminal.
Input-output isolation voltage(rms) is 3.75kV.
Collector-emitter voltage is 80V.
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC353)
2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Hybrid substrates that reguire high denity mounting
2. Programmable controllers
■ Features
1. 5-pin Mini-flat package
2. Double transfer mold package (Ideal for Flow
Soldering)
3. With base terminal
4. High collecter-emitter voltage (VCEO : 80V)
5. High isolation voltage between input and output
(Viso(rms) : 3.75kV)
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A00401EN
Date Sep. 30. 2003
© SHARP Corporation
PC353T
■ Internal Connection Diagram
1
1
6
3
5
3
4
4
5
6
Anode
Cathode
Emitter
Collector
Base
■ Outline Dimensions
(Unit : mm)
3.6±0.3
1.27±0.25
1.27±0.25
6
5
4
Date code
Anode mark
353
1
3
4.4±0.2
SHARP mark "s"
0.4±0.1
Factory identification mark
5.3±0.3
Epoxy resin
0.1±0.1
2.6±0.2
0.2±0.05
45˚
0.5+0.4
−0.2
6˚
7.0+0.2
−0.7
Product mass : approx. 0.1g
Sheet No.: D2-A00401EN
2
PC353T
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
Country of origin
no mark
Japan
Indonesia
Philippines
China
* This factory marking is for identification purpose only.
Please contact the local SHARP sales representative to see
the actual status of the production.
Sheet No.: D2-A00401EN
3
PC353T
■ Absolute Maximum Ratings
Output
Input
Parameter
Symbol
IF
Forward current
*1
Peak forward current
IFM
Reverse voltage
VR
Power dissipation
P
Collector-emitter voltage VCEO
Emitter-collector voltage VECO
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Ptot
Total power dissipation
Topr
Operating temperature
Tstg
Storage temperature
*2
Isolation voltage
Viso (rms)
*3
Soldering temperature
Tsol
Rating
50
1
6
70
80
6
80
6
50
150
170
−30 to +100
−40 to +125
3.75
260
(Ta=25˚C)
Unit
mA
A
V
mW
V
V
V
V
mA
mW
mW
˚C
˚C
kV
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Symbol
Forward voltage
VF
IR
Reverse Current
Terminal capacitance
Ct
Collector dark current
ICEO
Collector-emitter breakdown voltage BVCEO
Emitter-collector breakdown voltage BVECO
Collector-base breakdown voltage BVCBO
Collector current
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Cf
Floating capacitance
Rise time
tr
Response time
Fall time
tf
Conditions
IF=20mA
VR=4V
V=0, f=1kHz
VCE=20V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IC=0.1mA, IF=0
IF=5mA, VCE=5V
IF=20mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100Ω
MIN.
−
−
−
−
80
6
80
2.5
−
5×1010
−
−
−
TYP.
1.2
−
30
−
−
−
−
−
0.1
1×1011
0.6
4
3
MAX.
1.4
10
250
100
−
−
−
30
0.2
−
1.0
18
18
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
V
mA
V
Ω
pF
µs
µs
Sheet No.: D2-A00401EN
4
PC353T
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
Fig.1 Forward Current vs. Ambient
Temperature
100
Diode power dissipation P (mW)
Forward current IF (mA)
50
40
30
20
10
0
−30
0
25
55
75
80
70
60
40
20
0
−30
100
0
200
150
100
50
25
50
75
170
150
100
50
0
−30
100
0
25
50
75
100
Ambient temperature Ta(˚C)
Fig.5 Peak Forward Current vs. Duty Ratio
Fig.6 Forward Current vs. Forward Voltage
500
Pulse width≤100µs
Ta=25˚C
200
Forward current IF (mA)
Peak forward current IFM (mA)
100
200
Ambient temperature Ta(˚C)
10 000
75
Fig.4 Total Power Dissipation vs. Ambient
Temperature
Total power dissipation Ptot (mW)
Collector power dissipation Pc (mW)
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
0
55
Ambient temperature Ta(˚C)
Ambient temperature Ta(˚C)
0
−30
25
1 000
100
Ta=75˚C
100
25˚C
50˚C
0˚C
50
−25˚C
20
10
5
2
10
10−3
10−2
10−1
1
1
Duty ratio
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward voltage VF (V)
Sheet No.: D2-A00401EN
5
PC353T
Fig.7 Current Transfer Ratio vs. Forward
Current
Fig.8 Collector Current vs. Collector-emitter
Voltage
50
Collector current IC (mA)
Current transfer ratio CTR (%)
400
200
RBE=∞
0.5 1.0
5.0
10
IF=10mA
30
IF=5mA
20
IF=1mA
RBE=100kΩ
0
40
10
RBE=500kΩ
0
IF=30mA
IF=20mA
0
0
50 100
5
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.10 Collector - emitter Saturation Voltage
vs. Ambient Temperature
0.16
150
Collector-emitter saturation voltage
VCE(SAT) (V)
IF=5mA
VCE=5V
Relative current transfer ratio (%)
10
Collector-emitter voltage VCE (V)
Forward current IF (mA)
100
50
IF=20mA
IC=1mA
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−30
0
20
40
60
80
0
−30
100
Ambient temperature Ta (˚C)
200
100
Response Time (µs)
Collector dark current ICEO (A)
500
VCE=20V
10−7
5
−8
10
5
−9
10
5
60
80
100
VCE=2A
IC=2mA
Ta=25˚C
50
20
10
5
2
1
tf
tr
td
ts
0.5
10−10
5
0.2
0.1
0.01
−11
−30
40
Fig.12 Response Time vs. Load Resistance
10−6
5
10
20
Ambient temperature Ta (˚C)
Fig.11 Collector Dark Current vs. Ambient
Temperature
10−5
5
0
0
20
40
60
80
100
0.1
1
10
Load resistance RL (kΩ)
Ambient temperature Ta (˚C)
Sheet No.: D2-A00401EN
6
PC353T
Fig.13 Test Circuit for Response Time
Fig.14 Collector-emitter Saturation Voltage
vs. Forward Current
4.8
Ta=25˚C
RD
RL
Collector-emitter saturation voltage VCE(sat) (V)
VCC
Output Input
Output
Input
10%
VCE
td
tr
ts
tf
90%
Please refer to the conditions in Fig.12
IC=0.5mA
1mA
3mA
5mA
7mA
3.6
2.4
1.2
0
0
3
6
9
12
15
Foward current IF (mA)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A00401EN
7
PC353T
■ Design Considerations
● Design guide
While operating at IF
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