PC353TJ0000F

PC353TJ0000F PC353TJ0000F Mini-flat Package Includes Base Terminal Connection Photocoupler ■ Description ■ Agency approvals/Compliance PC353TJ0000F contains an IRED optically coupled to a phototransistor. It is packaged in a 5-pin Mini-flat with Base terminal. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC353) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Hybrid substrates that reguire high denity mounting 2. Programmable controllers ■ Features 1. 5-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. With base terminal 4. High collecter-emitter voltage (VCEO : 80V) 5. High isolation voltage between input and output (Viso(rms) : 3.75kV) 6. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00402EN Date Jun. 30. 2005 © SHARP Corporation PC353TJ0000F ■ Internal Connection Diagram 1 1 6 3 5 3 4 4 5 6 Anode Cathode Emitter Collector Base ■ Outline Dimensions (Unit : mm) 3.6±0.3 1.27±0.25 1.27±0.25 6 5 4 Date code Anode mark 353 1 3 4.4±0.2 SHARP mark "s" 0.4±0.1 Factory identification mark 5.3±0.3 Epoxy resin 0.1±0.1 2.6±0.2 0.2±0.05 45˚ 0.5+0.4 −0.2 6˚ 7.0+0.2 −0.7 Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A00402EN 2 PC353TJ0000F Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Rank mark There is no rank mark indicator. Sheet No.: D2-A00402EN 3 PC353TJ0000F ■ Absolute Maximum Ratings Output Input Parameter Symbol IF Forward current *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 80 6 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA A V mW V V V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse Current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector-base breakdown voltage BVCBO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance Rise time tr Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=20V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IC=0.1mA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 80 6 80 2.5 − 5×1010 − − − TYP. 1.2 − 30 − − − − − 0.1 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − − 30 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V V mA V Ω pF µs µs Sheet No.: D2-A00402EN 4 PC353TJ0000F Fig.2 Diode Power Dissipation vs. Ambient Temperature 70 120 60 100 Diode power dissipation P (mW) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature 50 40 30 20 10 0 −30 0 25 50 75 100 Ambient temperature Ta(˚C) 20 0 50 55 Ambient temperature Ta (˚C) 100 300 Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 40 Fig.4 Total Power Dissipation vs. Ambient Temperature 200 150 100 50 0 25 50 75 100 Ambient temperature Ta (˚C) 10 000 250 200 170 150 100 50 0 −30 125 Fig.5 Peak Forward Current vs. Duty Ratio 0 25 50 Ambient temperature Ta (˚C) 100 Fig.6 Forward Current vs. Forward Voltage 500 Pulse width≤100µs Ta=25˚C 200 Forward current IF (mA) Peak forward current IFM (mA) 70 60 0 −30 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature 0 −30 80 1 000 100 Ta=75˚C 100 25˚C 50˚C 0˚C 50 −25˚C 20 10 5 2 10 −4 10 10−3 10−2 10−1 1 1 Duty ratio 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V) Sheet No.: D2-A00402EN 5 PC353TJ0000F Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 50 IF=30mA IF=20mA Collector current IC (mA) Current transfer ratio CTR (%) 400 300 200 100 RBE=∞ RBE=500kΩ 1 10 IF=10mA 30 20 IF=5mA 10 IF=1mA RBE=100kΩ 0 0.1 40 0 0 100 5 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 150 Collector-emitter saturation voltage VCE(SAT) (V) IF=5mA VCE=5V Relative current transfer ratio (%) 10 Collector-emitter voltage VCE (V) Forward current IF (mA) 100 50 IF=20mA IC=1mA 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 −30 0 20 40 60 80 0 −30 100 Ambient temperature Ta (˚C) 40 60 80 100 Fig.12 Response Time vs. Load Resistance VCE=20V 10−6 100 Response Time (µs) Collector dark current ICEO (A) 20 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature 10−5 0 10−7 −8 10 −9 10 VCE=2A IC=2mA Ta=25˚C 10 tf tr td 1 ts 10−10 10−11 −30 0 20 40 60 80 0.1 0.01 100 0.1 1 10 Load resistance RL (kΩ) Ambient temperature Ta (˚C) Sheet No.: D2-A00402EN 6 PC353TJ0000F Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current 4.8 VCC RL Collector-emitter saturation voltage VCE(sat) (V) RD Ta=25˚C Output Input Output Input 10% VCE td tr ts tf 90% Please refer to the conditions in Fig.12 IC=0.5mA 1mA 3mA 5mA 7mA 3.6 2.4 1.2 0 0 3 6 9 12 15 Foward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00402EN 7 PC353TJ0000F ■ Design Considerations ● Design guide While operating at IF