PC357N Series
PC357N Series
Mini-flat Package,
General Purpose Photocoupler
■ Description
■ Agency approvals/Compliance
PC357N Series contains an IRED optically coupled
to a phototransistor.
It is packaged in a 4-pin Mini-flat package.
Input-output isolation voltage(rms) is 3.75kV.
Collector-emitter voltage is 80V(∗) and CTR is 50%
to 600% at input current of 5mA.
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC357)
2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Hybrid substrates that require high density mounting
2. Programmable controllers
■ Features
1. 4-pin Mini-flat package
2. Double transfer mold package (Ideal for Flow Soldering)
3. High collector-emitter voltage (VCEO : 80V(∗))
4. Current transfer ratio (CTR) : MIN. 50% at IF=5mA,
VCE=5V
5. Several CTR ranks available
6. High isolation voltage between input and output
(Viso(rms) : 3.75kV)
(*) Up to Date code "P9" (September 2002) VCEO : 35V.
From the production Date code "J5" (May 1997) to "P9"
(September 2002), however the products were screened by
BVCEO≥70V.
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A00101EN
Date Sep. 30. 2003
© SHARP Corporation
PC357N Series
■ Internal Connection Diagram
1
1
4
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■ Outline Dimensions
(Unit : mm)
3.6±0.3
2.54±0.25
4
3
Date code
Anode mark
357
4.4±0.2
SHARP mark
"S"
Rank mark
Factory identification mark
1
2
±0.1
0.4
5.3±0.3
Epoxy resin
0.1±0.1
2.6±0.2
0.2±0.05
45˚
0.5+0.4
−0.2
6˚
7.0+0.2
−0.7
Product mass : approx. 0.1g
Sheet No.: D2-A00101EN
2
PC357N Series
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
Country of origin
no mark
Japan
Indonesia
Philippines
China
* This factory marking is for identification purpose only.
Please contact the local SHARP sales representative to see
the actual status of the production
Rank mark
Refer to the Model Line-up table
Sheet No.: D2-A00101EN
3
PC357N Series
■ Absolute Maximum Ratings
Output
Input
Parameter
Symbol
Forward current
IF
*1
Peak forward current
IFM
Reverse voltage
VR
Power dissipation
P
Collector-emitter voltage VCEO
Emitter-collector voltage VECO
IC
Collector current
Collector power dissipation
PC
Ptot
Total power dissipation
Operating temperature
Topr
Storage temperature
Tstg
*2
Isolation voltage
Viso (rms)
*3
Soldering temperature
Tsol
Rating
50
1
6
70
*4
80
6
50
150
170
−30 to +100
−40 to +125
3.75
260
(Ta=25˚C)
Unit
mA
A
V
mW
V
V
mA
mW
mW
˚C
˚C
kV
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Date code "P9" (September 2002) VCEO:35V.
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Symbol
Forward voltage
VF
IR
Reverse current
Terminal capacitance
Ct
Collector dark current
ICEO
Collector-emitter breakdown voltage BVCEO
Emitter-collector breakdown voltage BVECO
Collector current
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Cf
Floating capacitance
tr
Rise time
Response time
Fall time
tf
Conditions
IF=20mA
VR=4V
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=5mA, VCE=5V
IF=20mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100Ω
MIN.
−
−
−
−
*5
80
6
2.5
−
5×1010
−
−
−
TYP.
1.2
−
30
−
−
−
5
0.1
1×1011
0.6
4
3
MAX.
1.4
10
250
100
−
−
30
0.2
−
1.0
18
18
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
*5 From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BVCEO≥70V.
Sheet No.: D2-A00101EN
4
PC357N Series
■ Model Line-up
Taping
3 000pcs/reel 750pcs/reel
PC357N
PC357NT
PC357N1
PC357N1T
PC357N2
PC357N2T
PC357N3
PC357N3T
PC357N4
PC357N4T
Model No.
PC357N5
PC357N5T
PC357N6
PC357N6T
PC357N7
PC357N7T
PC357N8
PC357N8T
PC357N9
PC357N9T
PC357N0
PC357N0T
Package
Rank mark
IC [mA]
(IF=5mA, VCE=5V, Ta=25˚C)
with or without
A
B
C
D
A or B
B or C
C or D
A, B or C
B, C or D
A, B, C or D
2.5 to 30.0
4.0 to 8.0
6.5 to 13.0
10.0 to 20.0
15.0 to 30.0
4.0 to 13.0
6.5 to 20.0
10.0 to 30.0
4.0 to 20.0
6.5 to 30.0
4.0 to 30.0
Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
Sheet No.: D2-A00101EN
5
PC357N Series
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
Fig.1 Forward Current vs. Ambient
Temperature
70
Diode power dissipation P (mW)
Forward current IF (mA)
60
50
40
30
20
10
0
−30
0
25
50
75
100
Ambient temperature Ta(˚C)
70
60
40
20
100
300
Total power dissipation Ptot (mW)
150
100
50
0
−30
0
25
50
75
100
Ambient temperature Ta (˚C)
200
170
150
100
50
500
Pulse width≤100µs
Ta=25˚C
Forward current IF (mA)
1 000
500
200
100
50
25˚C
0˚C
50
−25˚C
20
10
5
2
10
1
5
10− 2 2
Duty ratio
10− 1 2
5
1
50˚C
100
20
5
100
Ta=75˚C
200
2 000
5 10− 3 2
0
25
50
Ambient temperature Ta (˚C)
Fig.6 Forward Current vs. Forward Voltage
10 000
5 000
250
0
−30
125
Fig.5 Peak Forward Current vs. Duty Ratio
5
0
50 55
Ambient temperature Ta (˚C)
Fig.4 Total Power Dissipation vs. Ambient
Temperature
200
Collector power dissipation PC (mW)
80
0
−30
125
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Peak forward current IFM (mA)
100
0
0.5
1.0
1.5
2.0
2.5
Forward voltage VF (V)
3.0
3.5
Sheet No.: D2-A00101EN
6
PC357N Series
Fig.7 Current Transfer Ratio vs. Forward
Current
Fig.8 Collector Current vs. Collector-emitter
Voltage
50
500
Ta=25˚C
40
300
200
1
10
Forward current IF (mA)
2
0
4
6
8
10
80
60
40
0
20
Ambient temperature Ta (˚C)
IF=20mA
IC=1mA
0.14
Collector-emitter saturation voltage
VCE (sat) (V)
Relative current transfer ratio(%)
0.12
0.10
0.08
0.06
0.04
0.02
0
−30
100
0
20
80
60
40
Ambient temperature Ta (˚C)
100
Fig.12 Response Time vs. Load Resistance
500
VCE=2V
200 IC=2mA
Ta=25˚C
100
VCE=50V
10−6
5
−7
10
Response time (µs)
Collector dark current ICEO (A)
5mA
0.16
IF=5mA
VCE=5V
Fig.11 Collector Dark Current vs. Ambient
Temperature
5
10−8
5
10−9
5
50
tr
20
tf
10
5
2
1
td
ts
0.5
10−10
5
10−11
−30
20
Fig.10 Collector - emitter Saturation Voltage
vs. Ambient Temperature
50
10−5
5
mA
Collector-emitter voltage VCE (V)
100
0
−30
PC(MAX.)
10
0
100
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
150
30
10
100
0
0.1
IF=30mA
20
mA
400
Collector current IC (mA)
Current transfer ratio CTR (%)
VCE=5V
Ta=25˚C
0
20
40
60
80
Ambient temperature Ta (˚C)
0.2
0.1
0.01
100
0.1
1
10
Load resistance RL (kΩ)
50
Sheet No.: D2-A00101EN
7
PC357N Series
Fig.13 Test Circuit for Response Time
Fig.14 Collector-emitter Saturation Voltage
vs. Forward Current
8
VCC
Ta=25˚C
Input
RD
RL
Collector-emitter saturation voltage
VCE (sat) (V)
Input
Output Output
10%
90%
VCE
td
ts
tr
tf
Please refer to the conditions in Fig.12
7
6
IC=0.5mA
1mA
3mA
5mA
7mA
5
4
3
2
1
0
0
3
12
6
9
Forward current IF (mA)
15
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A00101EN
8
PC357N Series
■ Design Considerations
● Design guide
While operating at IF
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