PC364NJ0000F

PC364NJ0000F Series PC364NJ0000F Series Mini-Flat Package High CMR, AC Input, Low Input Current Type Photocoupler ■ Description PC364NJ0000F Series contains an IRED optically coupled to a phototransistor. AC input and Low input current type. It is packaged in a 4-pin mini-flat. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V and CTR is 50% to 400% at input current of ±0.5mA. ■ Agency approvals/Compliance 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC364) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers 2. Facsimiles 3. Telephones ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. AC input type 4. Low input current type (IF=±0.5mA) 5. High collector-emitter voltage (VCEO : 80V) 6. High noise immunity due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 7. High isolation voltage between input and output (Viso(rms) : 3.75kV) 8. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00702EN Date Jun. 30. 2005 © SHARP Corporation PC364NJ0000F Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode/Cathode Cathode/Anode Emitter Collector ■ Outline Dimensions 3.6±0.3 2.54±0.25 4 3 (Unit : mm) SHARP mark "S" Primary side mark Date code 364 1 2 4.4±0.2 Rank mark Factory identification mark 0.4 ±0.1 5.3±0.3 Epoxy resin 45˚ 2.6±0.2 0.2±0.05 0.1±0.1 6˚ 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A00702EN 2 PC364NJ0000F Series Date code (2 digit) 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M · · N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark P R S T U V W X A B C · · · repeats in a 20 year cycle Factory identification mark Factory identification Mark no mark Japan Indonesia China * This factory marking is for identification purpose only. Please Contact the local SHARP sales reprsentative to see the actual status of the production. Country of origin Rank mark Refer to the Model Line-up table Sheet No.: D2-A00702EN 3 PC364NJ0000F Series ■ Absolute Maximum Ratings Parameter Symbol IF Forward current *1 Peak forward current IFM P Power dissipation Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating ±10 ±200 15 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 Input (Ta=25˚C) Unit mA mA mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Parameter Symbol Forward voltage VF Ct Terminal capacitance ICEO Collector dark current Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Common mode rejection voltage CMR Conditions IF=±10mA V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=±0.5mA, VCE=5V IF=±10mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz Output Output Transfer characteristics VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak) IF=0, VCC=9V, Vnp=100mV MIN. − − − 80 6 0.25 − 5×1010 − − − 10 TYP. 1.2 30 − − − − − 1×1011 0.6 4 3 − MAX. 1.4 250 100 − − 2.0 0.2 − 1.0 18 18 − (Ta=25˚C) Unit V pF nA V V mA V Ω pF µs µs kV/µs Sheet No.: D2-A00702EN 4 PC364NJ0000F Series ■ Model Line-up Taping IC [mA] Rank mark (IF=±0.5mA, VCE=5V, Ta=25˚C) 3 000 pcs / reel 750 pcs / reel PC364NJ0000F PC364NTJ000F with or without 0.25 to 2.0 Model No. A PC364N1J000F PC364N1TJ00F 0.5 to 1.5 Package Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A00702EN 5 PC364NJ0000F Series Fig.1 Test Circuit for Common Mode Rejection Voltae (dV/dt) VCC RL VO VCM 1) Vcp Vnp VCM  VCM : High wave  pulse   RL=470Ω  VCC=9V VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.2 Forward Current vs. Ambient Temperature 15 Fig.3 Diode Power Dissipation vs. Ambient Temperature 10 Diode power dissipation P (mW) 15 Forward current IF (mA) 10 5 5 0 −30 0 25 50 75 100 125 0 −30 0 25 50 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.4 Collector Power Dissipation vs. Ambient Temperature 250 Collector power dissipation PC (mW) Fig.5 Total Power Dissipation vs. Ambient Temperature 250 Total power dissipation Ptot (mW) 0 25 50 75 100 125 200 200 170 150 150 100 100 50 50 0 −30 0 −30 0 25 50 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A00702EN 6 PC364NJ0000F Series Fig.6 Peak Forward Current vs. Duty Ratio Pulse width≤100µs Ta=25˚C Fig.7 Forward Current vs. Forward Voltage 100 1 000 Peak forward current IFM (mA) Forward current IF (mA) 10 Ta=25˚C Ta=100˚C 1 Ta=75˚C Ta=50˚C Ta=0˚C Ta=−25˚C 100 10 10−3 10−2 Duty ratio 10−1 0.1 1 0 0.5 1 1.5 2 Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current 500 VCE=5V Ta=25˚C Current transfer ratio CTR (%) 400 Fig.9 Collector Current vs. Collector-emitter Voltage 40 Ta=25˚C PC (MAX.) Collector current IC (mA) 30 IF=7mA 20 IF=5mA IF=3mA 10 IF=2mA IF=1mA IF=0.5mA 6 8 10 300 200 100 0 0.1 0 1 Forward current IF (mA) 10 0 2 4 Collector-emitter voltage VCE (V) Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 150 VCE=5V IF=0.5mA 100 Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Sheet No.: D2-A00702EN IF=10mA IC=1mA Relative current transfer ratio (%) 50 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) 7 PC364NJ0000F Series Fig.12 Collector Dark Current vs. Ambient Temperature 10−5 10−6 Responce time (µs) 10−7 10−8 10−9 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) VCE=50V Fig.13 Response Time vs. Load Resistance (Active region) 100 VCE=2V, IC=2mA Collector dark current ICEO (A) tr 10 tf td ts 1 0.1 1 Load resistance RL (kΩ) 10 Fig.14 Response Time vs. Load Resistance (Saturation region) 1 000 Vcc=5V, IF=1mA, Ta=25˚C Fig.15 Test Circuit for Response Time VCC RD RL Output Input Output VCE td tr ts tf 10% 90% tf Responce time (µs) 100 ts Input 10 tr Please refer to the conditions in Fig.13 and Fig. 14 td 1 1 10 Load resistance RL (kΩ) 100 Fig.16 Frequency Response 5 VCE=2V IC=2mA Ta=25˚C RL=10kΩ −5 1kΩ −10 100Ω −15 −20 −25 0.1 Fig.17 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) 5 IC=7mA 4 IC=5mA IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 Ta=25˚C 0 Voltage gain AV (dB) 1 0 0 2 4 6 8 10 Forward current IF (mA) 1 10 Frequency f (kHz) 100 1 000 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00702EN 8 PC364NJ0000F Series ■ Design Considerations ● Design guide While operating at IF