PC365N

PC365N Series PC365N Series Mini-flat Package, Darlington Phototransistor Output, Low Input Current Photocoupler ■ Description ■ Agency approvals/Compliance PC365N contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat. Low input current type. Input-output isolation voltage(rms) is 3.75kV. CTR is MIN. 600% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC365) 2. Package resin : UL flammability grade (94V-0) ■ Applications ■ Features 1. Programmable controllers 2. Facsimiles 3. Telephones 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. Darlington phototransistor output (CTR : MIN. 600% at IF=0.5mA, VCE=2V) 5. High isolation voltage between input and output (Viso(rms) : 3.75kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A01001EN Date Sep. 30. 2003 © SHARP Corporation PC365N Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) 3.6±0.3 2.54±0.25 4 3 Date code Anode mark 365 4.4±0.2 SHARP mark "S" Factory identification mark 1 2 ±0.1 0.4 5.3±0.3 Epoxy resin 0.1±0.1 2.6±0.2 0.2±0.05 45˚ 0.5+0.4 −0.2 6˚ 7.0+0.2 −0.7 Product mass : approx. 0.1g Sheet No.: D2-A01001EN 2 PC365N Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Sheet No.: D2-A01001EN 3 PC365N Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation *2 Isolation voltage Viso (rms) Topr Operating temperature Tstg Storage temperature *3 Soldering temperature Tsol Rating 10 200 6 15 35 6 80 150 170 3.75 −30 to +100 −40 to +125 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW kV ˚C ˚C ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Conditions IF=5mA VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=2V IF=1mA, IC=2mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=10mA, RL=100Ω MIN. − − − − 35 6 3 − 5×1010 − − − TYP. 1.2 − 30 − − − 14 − 1×1011 0.6 60 53 MAX. 1.4 10 250 1000 − − 60 1.0 − 1.0 300 250 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A01001EN 4 PC365N Series ■ Model Line-up Taping 3 000 pcs/reel 750 pcs/reel Model No. PC365N PC365NT Package Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A01001EN 5 PC365N Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature 10 5 0 −30 0 25 50 75 100 15 10 5 0 −30 125 0 200 150 100 50 25 50 75 75 100 125 Fig.4 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.3 Collector Power Dissipation vs. Ambient Temperature 0 50 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 0 −30 25 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 Ta=100˚C 10 Ta=75˚C 25˚C 0˚C 50˚C −25˚C 1 20 10 −3 5 10 2 −2 5 10 2 5 10 −1 0.1 2 5 1 0 Duty ratio 0.5 1.0 1.5 2.0 Forward voltage VF (V) Sheet No.: D2-A01001EN 6 PC365N Series Fig.8 Collector Current vs. Forward Current Fig.7 Current Transfer Ratio vs. Forward Current 4 000 3 500 3 000 Collector current IC (mA) Current transfer ratio CTR (%) 100 VCE=2V Ta=25˚C 2 500 2 000 1 500 VCE=2V Ta=25˚C 10 1 1 000 500 0 0.1 1 0.1 0.1 10 1 Forward current IF (mA) Forward current IF (mA) Fig.9 Collector Current vs. Collector-emitter Voltage (1) 120 100 Ta=25˚C PC(MAX) IF=3.0mA IF=7.0mA IF=2.0mA IF=5.0mA 80 Collector current IC (mA) Collector current IC (mA) Fig.10 Collector Current vs. Collector-emitter Voltage (2) Ta=25˚C PC(MAX) 100 IF=3.0mA IF=2.0mA 60 IF=1.0mA 40 10 IF=1.0mA IF=0.7mA IF=0.5mA 10 IF=0.7mA 20 IF=0.5mA 0 0 1 2 3 0 4 0 5 Fig.11 Relative Current Transfer Ratio vs. Ambient Temperature 1.5 2 Fig.12 Collector - emitter Saturation Voltage vs. Ambient Temperature 1.2 IF=0.5mA VCE=2V Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 120 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 140 0.5 100 80 60 40 20 IF=1mA IC=2mA 1 0.8 0.6 0.4 0.2 0 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A01001EN 7 PC365N Series Fig.13 Collector Dark Current vs. Ambient Temperature 10−4 Fig.14 Response Time vs. Load Resistance 1 000 VCE=10V Collector dark current ICEO (A) 10−5 VCE=2V IC=10mA Ta=25˚C tr Response time (µs) 10−6 10−7 10−8 100 tf ts td 10 10−9 10−10 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 1 0.01 Ambient temperature Ta (˚C) 0.1 1 Load resistance RL (kΩ) 10 Fig.15 Test Circuit for Response Time VCC Input Input RD RL Output Output 10% 90% VCE td ts tr tf Please refer to the conditions in Fig.14 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A01001EN 8 PC365N Series ■ Design Considerations ● Design guide While operating at IF