PC367N Series
PC367N Series
Mini-flat Package
High CMR, Low Input Current
Type Photocoupler
■ Description
■ Agency approvals/Compliance
PC367N contains an IRED optically coupled to a
phototransistor.
It is packaged in a 4-pin mini-flat.
Low input current type.
Input-output isolation voltage(rms) is 3.75kV.
Collector-emitter voltage is 80V (*) and CTR is
100% to 500% at input current of 0.5mA.
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC367)
2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■ Features
1. 4-pin Mini-flat package
2. Double transfer mold package (Ideal for Flow
Soldering)
3. Low input current type (IF=0.5mA)
4. High collector-emitter voltage (VCEO : 80V(∗))
5. High noise immunity due to high common mode
rejection voltage (CMR : MIN. 10kV/µs)
6. High isolation voltage between input and output
(Viso(rms) : 3.75kV)
(*) Up to Date code "P9" (September 2002) VCEO : 70V.
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A00501EN
Date Sep. 30. 2003
© SHARP Corporation
PC367N Series
■ Internal Connection Diagram
1
1
4
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■ Outline Dimensions
(Unit : mm)
3.6±0.3
2.54±0.25
4
3
Anode mark
367
4.4±0.2
Date code
SHARP mark
"s"
Rank mark
1
2
0.4±0.1
Factory identification mark
5.3±0.3
Epoxy resin
0.1±0.1
2.6±0.2
0.2±0.05
45˚
0.5+0.4
−0.2
6˚
7.0+0.2
−0.7
Product mass : approx. 0.1g
Sheet No.: D2-A00501EN
2
PC367N Series
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
Country of origin
no mark
Japan
Indonesia
Philippines
China
* This factory marking is for identification purpose only.
Please Contact the local SHARP sales reprsentative to see the actual status of
the production.
Rank mark
Refer to the Model Line-up table
Sheet No.: D2-A00501EN
3
PC367N Series
■ Absolute Maximum Ratings
Output
Input
Parameter
Symbol
Forward current
IF
*1
Peak forward current
IFM
Reverse voltage
VR
Power dissipation
P
Collector-emitter voltage VCEO
Emitter-collector voltage VECO
IC
Collector current
Collector power dissipation
PC
Ptot
Total power dissipation
Topr
Operating temperature
Tstg
Storage temperature
*2
Isolation voltage
Viso (rms)
*3
Soldering temperature
Tsol
(Ta=25˚C)
Rating
Unit
10
mA
200
mA
V
6
15
mW
*4
80
V
6
V
50
mA
150
mW
170
mW
−30 to +100
˚C
−40 to +125
˚C
3.75
kV
260
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Date code "P9" (September 2002) VCEO : 70V
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Symbol
Forward voltage
VF
IR
Reverse current
Terminal capacitance
Ct
Collector dark current
ICEO
Collector-emitter breakdown voltage BVCEO
Emitter-collector breakdown voltage BVECO
Collector current
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Floating capacitance
Cf
tr
Rise time
Response time
tf
Fall time
Common mode rejection voltage
CMR
Conditions
IF=10mA
VR=4V
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=0.5mA, VCE=5V
IF=10mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100Ω
Ta=25˚C, RL=470Ω, VCM=1.5kV(peak)
IF=0mA, VCC=9V, Vnp=100mV
MIN.
−
−
−
−
*5
80
6
0.5
−
5×1010
−
−
−
TYP.
1.2
−
30
−
−
−
−
−
1×1011
0.6
4
3
MAX.
1.4
10
250
100
−
−
2.5
0.2
−
1.0
18
18
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
10
−
−
kV/µs
*5 Up to Date code "P9" (September 2002) BVCEO≥70V.
Sheet No.: D2-A00501EN
4
PC367N Series
■ Model Line-up
Package
Model No.
Taping
3 000pcs/reel 750pcs/reel
PC367N
PC367NT
PC367N1
PC367N1T
PC367N2
PC367N2T
Rank mark
IC [mA]
(IF=0.5mA, VCE=5V, Ta=25˚C)
with or without
A
B
0.5 to 2.5
0.75 to 1.5
1.0 to 2.0
Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
Sheet No.: D2-A00501EN
5
PC367N Series
Fig.1 Test Circuit for Common Mode Rejection Voltae
(dV/dt)
VCC
RL
VCM
VO
1)
Vnp
Vcp
VCM : High wave
pulse
RL=470Ω
VCC=9V
VCM
VO
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
Diode power dissipation P (mW)
Forward current IF (mA)
Fig.2 Forward Current vs. Ambient
Temperature
10
5
0
−30
(Vcp Nearly = dV/dt×Cf×RL)
1) Vcp : Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
0
25
50
75
100
15
10
5
0
−30
125
0
200
150
100
50
0
25
50
75
50
75
100
125
Fig.5 Total Power Dissipation vs. Ambient
Temperature
Total power dissipation Ptot (mW)
Collector power dissipation PC (mW)
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
0
−30
25
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
100
200
170
150
100
50
0
−30
125
Ambient temperature Ta (˚C)
0
25
50
75
100
125
Ambient temperature Ta (˚C)
Sheet No.: D2-A00501EN
6
PC367N Series
Fig.7 Forward Current vs. Forward Voltage
Fig.6 Peak Forward Current vs. Duty Ratio
100
Pulse width≤100µs
Ta=25˚C
1 000
Forward current IF (mA)
Peak forward current IFM (mA)
2 000
500
200
100
50
10
Ta=25˚C
Ta=100˚C
Ta=0˚C
Ta=75˚C
1
Ta=−25˚C
Ta=50˚C
20
10
−3
5 10
2
−2
5 10
2
0.1
−1
5 10
2
5
1
0
0.5
Duty ratio
Fig.8 Current Transfer Ratio vs. Forward
Current
700
Collector current IC (mA)
Current transfer ratio CTR (%)
25
300
200
PC (MAX.)
IF=5mA
20
IF=3mA
15
IF=2mA
10
IF=1mA
5
100
IF=0.5mA
0
1
0
10
2
4
6
8
10
Collector-emitter voltage VCE (V)
Forward current IF (mA)
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.11 Collector - emitter Saturation Voltage
vs. Ambient Temperature
VCE=5V
IF=0.5mA
Collector-emitter saturation voltage VCE (sat) (V)
Relative current transfer ratio (%)
Ta=25˚C
IF=7mA
400
140
2.0
30
500
160
1.5
Fig.9 Collector Current vs. Collector-emitter
Voltage
VCE=5V
Ta=25˚C
600
0
0.1
1.0
Forward voltage VF (V)
120
100
80
60
40
20
0
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (˚C)
0.16
IF=10mA
IC=1mA
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (˚C)
Sheet No.: D2-A00501EN
7
PC367N Series
Fig.12 Collector Dark Current vs. Ambient
Temperature
100
VCE=50V
VCE=2V, IC=2mA
10−6
10−7
Responce time (µs)
Collector dark current ICEO (A)
10−5
Fig.13 Response Time vs. Load Resistance
(Active region)
10−8
10−9
tr
tf
10
td
ts
10−10
10−11
−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100
1
0.1
1
Ambient temperature Ta (˚C)
Load resistance RL (kΩ)
Fig.15 Test Circuit for Response Time
Fig.14 Response Time vs. Load Resistance
(Saturation region)
1 000
Vcc=5V, IF=1mA, Ta=25˚C
VCC
RL
RD
tf
Responce time (µs)
10
Output Input
Output
Input
ts
10%
100
VCE
ts
tf
td
tr
10
tr
Please refer to the conditions in Fig.13 and Fig.14
td
1
90%
100
10
1
Load resistance RL (kΩ)
Fig.16 Frequency Response
Fig.17 Collector-emitter Saturation Voltage
vs. Forward Current
VCE=2V
IC=2mA
Ta=25˚C
Voltage gain AV (dB)
0
−5
Collector-emitter saturation voltage VCE (sat) (V)
5
RL=10kΩ
1kΩ
−10
100Ω
−15
−20
−25
0.1
1
10
100
1 000
5
IC=7mA
4
IC=3mA
IC=2mA
3
IC=1mA
IC=0.5mA
2
1
0
0
Frequency f (kHz)
Ta=25˚C
IC=5mA
2
4
6
8
10
Forward current IF (mA)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A00501EN
8
PC367N Series
■ Design Considerations
● Design guide
While operating at IF
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