PC3H2 Series
PC3H2 Series
∗
4-channel package type is also available. (model No. PC3Q62)
Mini-flat Half Pitch Package, High CMR Photocoupler
■ Description
PC3H2 Series contains a IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 80V(*), CTR is 20% to 400% at input current of 1mA and CMR is MIN. 10kV/µs.
■ Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3H2) 2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Programmable controllers
■ Features
1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V(∗)) 4. High noise immunity due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 5. Isolation voltage between input and output (Viso(rms) : 2.5kV)
(*) Up to Date code "P9" (September 2002) VCEO : 70V.
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A01101EN Date Sep. 30. 2003 © SHARP Corporation
PC3H2 Series ■ Internal Connection Diagram
1
1 4
2 3
2
3
4
Anode Cathode Emitter Collector
■ Outline Dimensions
Rank mark SHARP mark "S" Anode mark 2.6±0.3
1
(Unit : mm)
Date code
S 3H2
4.4
±0.2
4
2
3
1.27±0.25
5.3±0.3 (1.7) 0.2±0.05 2.0±0.2 Epoxy resin
7.0+0.2 −0.7
*( ): Reference dimensions Product mass : approx. 0.05g
0.1±0.1
0.5+0.4 −0.2
0.4±0.1
Sheet No.: D2-A01101EN
2
PC3H2 Series Date code (2 digit)
1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M · · N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D
A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001
Mark P R S T U V W X A B C · · ·
repeats in a 20 year cycle
Country of origin
Japan
Rank mark
Refer to the Model Line-up table
Sheet No.: D2-A01101EN
3
PC3H2 Series
■ Absolute Maximum Ratings
Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 *4 80 6 50 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C
*1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO : 70V.
■ Electro-optical Characteristics
Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Common mode rejection voltage CMR
Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=1mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz
Output
Input
Input
Output
Transfer characteristics
VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak) IF=0, VCC=9V, Vnp=100mV
MIN. − − − − *5 80 6 0.2 − 5×1010 − − − 10
TYP. 1.2 − 30 − − − − 0.1 1×1011 0.6 4 3 −
MAX. 1.4 10 250 100 − − 4.0 0.2 − 1.0 18 18 −
(Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs kV/µs
*5 Up to Date code "P9" (September 2002) BVCEO≥70V.
Sheet No.: D2-A01101EN
4
PC3H2 Series
■ Model Line-up
Package Taping 3 000pcs/reel PC3H2 PC3H2A PC3H2B PC3H2C PC3H2D PC3H2AB PC3H2BC PC3H2CD PC3H2AC PC3H2BD PC3H2AD Rank mark with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D IC [mA] (IF=1mA, VCE=5V, Ta=25˚C) 0.2 to 4.0 0.35 to 0.7 0.5 to 1.0 0.8 to 1.6 1.2 to 2.4 0.35 to 1.0 0.5 to 1.6 0.8 to 2.4 0.35 to 1.6 0.5 to 2.4 0.35 to 2.4
Model No.
Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
Sheet No.: D2-A01101EN
5
PC3H2 Series Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM RL Vnp VCC VCM : High wave pulse RL=470Ω VCC=9V VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. 1) Vcp Vnp
VCM
Fig.2 Forward Current vs. Ambient Temperature
50
Fig.3 Diode Power Dissipation vs. Ambient Temperature
100 Diode power dissipation P (mW)
Forward current IF (mA)
40
80 70 60
30
20
40
10 0 −30
20 0 −30
0
25
50 55
75
100
125
0
25
50 55
75
100
125
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig.4 Collector Power Dissipation vs. Ambient Temperature
250 Collector power dissipation PC (mW)
Fig.5 Total Power Dissipation vs. Ambient Temperature
250
200
Total power dissipation Ptot (mW)
0 25 50 75 100 125
200 170 150
150
100
100
50
50
0 −30
0 −30
0
25
50
75
100
125
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Sheet No.: D2-A01101EN
6
PC3H2 Series Fig.6 Peak Forward Current vs. Duty Ratio
2 000 1 000 500 200 100 50 20
1
Fig.7 Forward Current vs. Forward Voltage
500 200
Pulse width≤100µs Ta=25˚C Forward current IF (mA)
Ta= 75˚C
50˚C 25˚C 0˚C
Peak forward current IFM (mA)
100 50 20 10 5 2
− 25˚C
10
5
10−3 2
5 10
−2
2
5 10
−2
2
5
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Duty ratio
Forward voltage VF (V)
Fig.8 Current Transfer Ratio vs. Forward Current
300 VCE=5V Ta=25˚C 200
Fig.9 Collector Current vs. Collector-emitter Voltage
50 PC (max) 40 Collector current IC (mA) Ta=25˚C
Current transfer ratio CTR (%)
30
IF=30mA 20mA
20
100
10mA
10
5mA 1mA 0 2 4 6 8 10
0 1 10 Forward current IF (mA) 100
0
Collector-emitter voltage VCE (V)
Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature
150 IF=1mA VCE=5V
Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature
0.20 0.18 0.16 Collector-emitter saturation voltage VCE (sat) (V) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IF=20mA IC=1mA
Relative current transfer ratio (%)
100
50
0 −40
−20
0
20
40
60
80
100
0.00 −40
−20
0
20
40
60
80
100
Ambient temperature Ta (˚C)
Ambient temperaturet Ta (˚C)
Sheet No.: D2-A01101EN
7
PC3H2 Series Fig.12 Collector Dark Current vs. Ambient Temperature
10−4 VCE=50V Collector dark current ICEO (A) 10−5 Response time (µs) 10.0
Fig.13 Response Time vs. Load Resistance
100.0 VCE=2V IC=2mA Ta=25˚C tf tr td ts
10−6
10−7
1.0
10−8 10−9 −40
−20
0
20
40
60
80
100
0.1 0.1
1 Load resistance RL (kΩ)
10
Ambient temperature Ta (˚C)
Fig.14 Test Circuit for Response Time
VCC RD Input VCE td tr ts tf 90% RL Output Input 10%
Fig.15 Frequency Response
VCE=5V IC=2mA Ta=25˚C 0 Voltage gain AV (dB)
Output
RL=10kΩ −10
1kΩ
100Ω
Please refer to the conditions in Fig.13
−20 0.1
1
10 Frequency f (kHz)
100
1 000
Fig.16 Collector-emitter Saturation Voltage vs. Forward Current
5 IC=0.5mA Collector-emitter saturation voltage VCE (sat) (V) 4 1mA 3mA 5mA 3 7mA Ta=25˚C
2
1
0 0 3 6 9 12 15 Forward current IF (mA)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A01101EN
8
PC3H2 Series ■ Design Considerations ● Design guide
While operating at IF
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