PC3H2D

PC3H2 Series PC3H2 Series ∗ 4-channel package type is also available. (model No. PC3Q62) Mini-flat Half Pitch Package, High CMR Photocoupler ■ Description PC3H2 Series contains a IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 80V(*), CTR is 20% to 400% at input current of 1mA and CMR is MIN. 10kV/µs. ■ Agency approvals/Compliance 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3H2) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V(∗)) 4. High noise immunity due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 5. Isolation voltage between input and output (Viso(rms) : 2.5kV) (*) Up to Date code "P9" (September 2002) VCEO : 70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A01101EN Date Sep. 30. 2003 © SHARP Corporation PC3H2 Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions Rank mark SHARP mark "S" Anode mark 2.6±0.3 1 (Unit : mm) Date code S 3H2 4.4 ±0.2 4 2 3 1.27±0.25 5.3±0.3 (1.7) 0.2±0.05 2.0±0.2 Epoxy resin 7.0+0.2 −0.7 *( ): Reference dimensions Product mass : approx. 0.05g 0.1±0.1 0.5+0.4 −0.2 0.4±0.1 Sheet No.: D2-A01101EN 2 PC3H2 Series Date code (2 digit) 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M · · N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark P R S T U V W X A B C · · · repeats in a 20 year cycle Country of origin Japan Rank mark Refer to the Model Line-up table Sheet No.: D2-A01101EN 3 PC3H2 Series ■ Absolute Maximum Ratings Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 *4 80 6 50 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO : 70V. ■ Electro-optical Characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Common mode rejection voltage CMR Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=1mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz Output Input Input Output Transfer characteristics VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak) IF=0, VCC=9V, Vnp=100mV MIN. − − − − *5 80 6 0.2 − 5×1010 − − − 10 TYP. 1.2 − 30 − − − − 0.1 1×1011 0.6 4 3 − MAX. 1.4 10 250 100 − − 4.0 0.2 − 1.0 18 18 − (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs kV/µs *5 Up to Date code "P9" (September 2002) BVCEO≥70V. Sheet No.: D2-A01101EN 4 PC3H2 Series ■ Model Line-up Package Taping 3 000pcs/reel PC3H2 PC3H2A PC3H2B PC3H2C PC3H2D PC3H2AB PC3H2BC PC3H2CD PC3H2AC PC3H2BD PC3H2AD Rank mark with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D IC [mA] (IF=1mA, VCE=5V, Ta=25˚C) 0.2 to 4.0 0.35 to 0.7 0.5 to 1.0 0.8 to 1.6 1.2 to 2.4 0.35 to 1.0 0.5 to 1.6 0.8 to 2.4 0.35 to 1.6 0.5 to 2.4 0.35 to 2.4 Model No. Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A01101EN 5 PC3H2 Series Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL Vnp VCC  VCM : High wave  pulse   RL=470Ω  VCC=9V VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. 1) Vcp Vnp VCM Fig.2 Forward Current vs. Ambient Temperature 50 Fig.3 Diode Power Dissipation vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 40 80 70 60 30 20 40 10 0 −30 20 0 −30 0 25 50 55 75 100 125 0 25 50 55 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.4 Collector Power Dissipation vs. Ambient Temperature 250 Collector power dissipation PC (mW) Fig.5 Total Power Dissipation vs. Ambient Temperature 250 200 Total power dissipation Ptot (mW) 0 25 50 75 100 125 200 170 150 150 100 100 50 50 0 −30 0 −30 0 25 50 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A01101EN 6 PC3H2 Series Fig.6 Peak Forward Current vs. Duty Ratio 2 000 1 000 500 200 100 50 20 1 Fig.7 Forward Current vs. Forward Voltage 500 200 Pulse width≤100µs Ta=25˚C Forward current IF (mA) Ta= 75˚C 50˚C 25˚C 0˚C Peak forward current IFM (mA) 100 50 20 10 5 2 − 25˚C 10 5 10−3 2 5 10 −2 2 5 10 −2 2 5 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Duty ratio Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current 300 VCE=5V Ta=25˚C 200 Fig.9 Collector Current vs. Collector-emitter Voltage 50 PC (max) 40 Collector current IC (mA) Ta=25˚C Current transfer ratio CTR (%) 30 IF=30mA 20mA 20 100 10mA 10 5mA 1mA 0 2 4 6 8 10 0 1 10 Forward current IF (mA) 100 0 Collector-emitter voltage VCE (V) Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 150 IF=1mA VCE=5V Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.20 0.18 0.16 Collector-emitter saturation voltage VCE (sat) (V) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IF=20mA IC=1mA Relative current transfer ratio (%) 100 50 0 −40 −20 0 20 40 60 80 100 0.00 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (˚C) Ambient temperaturet Ta (˚C) Sheet No.: D2-A01101EN 7 PC3H2 Series Fig.12 Collector Dark Current vs. Ambient Temperature 10−4 VCE=50V Collector dark current ICEO (A) 10−5 Response time (µs) 10.0 Fig.13 Response Time vs. Load Resistance 100.0 VCE=2V IC=2mA Ta=25˚C tf tr td ts 10−6 10−7 1.0 10−8 10−9 −40 −20 0 20 40 60 80 100 0.1 0.1 1 Load resistance RL (kΩ) 10 Ambient temperature Ta (˚C) Fig.14 Test Circuit for Response Time VCC RD Input VCE td tr ts tf 90% RL Output Input 10% Fig.15 Frequency Response VCE=5V IC=2mA Ta=25˚C 0 Voltage gain AV (dB) Output RL=10kΩ −10 1kΩ 100Ω Please refer to the conditions in Fig.13 −20 0.1 1 10 Frequency f (kHz) 100 1 000 Fig.16 Collector-emitter Saturation Voltage vs. Forward Current 5 IC=0.5mA Collector-emitter saturation voltage VCE (sat) (V) 4 1mA 3mA 5mA 3 7mA Ta=25˚C 2 1 0 0 3 6 9 12 15 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A01101EN 8 PC3H2 Series ■ Design Considerations ● Design guide While operating at IF