PC3H712NIP

PC3H71xNIP Series Mini-flat Half Pitch Package High CMR, Low Input Current Photocoupler PC3H71xNIP Series ∗ 4-channel package type is also available. (model No. PC3Q71xNIP Series) ■ Description ■ Agency approvals/Compliance PC3H71xNIP Series contains a IRED optically coupled to a phototransistor. It is packaged in a 4-pin mini-flat, half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 80V(∗), CTR is 100% to 700% at input current of 0.5mA and CMR is MIN. 10kV/µs. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3H71) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers 2. Facsimiles 3. Telephones ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. High collector-emitter voltage (VCEO : 80V(∗)) 5. High noise immunity due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 6. Isolation voltage between input and output (Viso(rms) : 2.5kV) (*) Up to Date code "P9" (September 2002) VCEO : 70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02501EN Date Sep. 30. 2003 © SHARP Corporation PC3H71xNIP Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) Rank mark Date code SHARP mark "S" Anode mark H71 3 1.27±0.25 0.4±0.1 2 4 2.6±0.3 1 4.4±0.2 5.3±0.3 Epoxy resin 7.0+0.2 −0.7 0.5+0.4 −0.2 0.1±0.1 0.2 ±0.05 2.0±0.2 (1.7) *( ): Reference dimensions Product mass : approx. 0.05g Sheet No.: D2-A02501EN 2 PC3H71xNIP Series Data code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Rank mark Refer to the Model Line-up table Sheet No.: D2-A02501EN 3 PC3H71xNIP Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 10 200 6 15 *4 80 6 50 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO : 70V. ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Common mode rejection voltage CMR Conditions IF=10mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak) IF=0, VCC=9V, Vnp=100mV MIN. − − − − *5 80 6 0.5 − 5×1010 − − − TYP. 1.2 − 30 − − − − − 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 3.5 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs 10 − − kV/µs *5 Up to Date code "P9" (September 2002) BVCEO≥70V. Sheet No.: D2-A02501EN 4 PC3H71xNIP Series ■ Model Line-up Taping 3 000pcs/reel PC3H710NIP PC3H711NIP Model No. PC3H712NIP PC3H715NIP Package Rank mark IC [mA] (IF=0.5mA, VCE=5V, Ta=25˚C) with or without A B A or B 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A02501EN 5 PC3H71xNIP Series Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL 1) VCC Vnp  VCM : High wave  pulse   RL=470Ω  VCC=9V VCM VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.3 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) Fig.2 Forward Current vs. Ambient Temperature 10 5 0 −30 0 25 50 75 100 Vnp Vcp 15 10 5 0 −30 125 0 200 150 100 50 0 25 50 75 50 75 100 125 Fig.5 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.4 Collector Power Dissipation vs. Ambient Temperature 0 −30 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Sheet No.: D2-A02501EN 6 PC3H71xNIP Series Fig.7 Forward Current vs. Forward Voltage Fig.6 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 10 Ta=25˚C Ta=100˚C Ta=0˚C Ta=75˚C 1 Ta=−25˚C Ta=50˚C 20 10 −3 5 10 2 −2 5 10 2 0.1 −1 5 10 2 1 5 0 0.5 Duty ratio Fig.8 Current Transfer Ratio vs. Forward Current 800 Ta=25˚C PC (MAX.) 600 500 400 300 200 30 IF=7mA IF=5mA 20 IF=3mA IF=2mA 10 IF=1mA 100 0 0.1 IF=0.5mA 0 1 0 10 2 4 6 8 10 Collector-emitter voltage VCE (V) Forward current IF (mA) Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 150 Relative current transfer ratio (%) 2.0 40 Collector current IC (mA) Current transfer ratio CTR (%) 1.5 Fig.9 Collector Current vs. Collector-emitter Voltage VCE=5V Ta=25˚C 700 1.0 Forward voltage VF (V) VCE=5V IF=0.5mA 100 50 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) 0.16 IF=10mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Sheet No.: D2-A02501EN 7 PC3H71xNIP Series Fig.12 Collector Dark Current vs. Ambient Temperature 100 VCE=50V VCE=2V, IC=2mA 10−6 10−7 Responce time (µs) Collector dark current ICEO (A) 10−5 Fig.13 Response Time vs. Load Resistance (active region) 10−8 10−9 tr tf 10 td ts 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 1 0.1 1 Ambient temperature Ta (˚C) Load resistance RL (kΩ) Fig.14 Response Time vs. Load Resistance (Saturation region) 1 000 Fig.15 Test Circuit for Response Time Vcc=5V, IF=1mA, Ta=25˚C VCC RL RD tf Responce time (µs) 10 Output Input Output Input ts 100 10% VCE ts tf td tr 10 tr Please refer to the conditions in Fig.13 and Fig.14 td 1 90% 100 10 1 Load resistance RL (kΩ) Fig.16 Frequency Response Fig.17 Collector-emitter Saturation Voltage vs. Forward Current VCE=2V IC=2mA Ta=25˚C Voltage gain AV (dB) 0 −5 Collector-emitter saturation voltage VCE (sat) (V) 5 RL=10kΩ 1kΩ −10 100Ω −15 −20 −25 0.1 1 10 100 1 000 5 IC=7mA 4 IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 1 0 0 Frequency f (kHz) Ta=25˚C IC=5mA 2 4 6 8 10 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02501EN 8 PC3H71xNIP Series ■ Design Considerations ● Design guide While operating at IF