PC3H7B

PC3H7 Series Mini-flat Half Pitch Package, General Purpose Photocoupler PC3H7 Series ∗ 4-channel package type is also available. (model No. PC3Q67) ■ Description ■ Agency approvals/Compliance PC3H7 Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package, Half ptich type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 80V(*) and CTR is 20% to 400% at input current of 1mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3H7) 2. Approved by VDE, VDE0884 (as an option), file No. 5922UG (as model No. PC3H7) 3. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V(*)) 4. Current transfer ratio (CTR : MIN. 20% at IF=1mA, VCE=5V) 5. Several CTR ranks available 6. Isolation voltage between input and output (Viso(rms) : 2.5kV) (*) Up to Date code "P9" (September 2002) VCEO : 70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A01901EN Date Sep. 30. 2003 © SHARP Corporation PC3H7 Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) VDE0884 option 3 H7 3 4.4±0.2 Epoxy resin VDE0884 Indenfication mark Epoxy resin 0.2±0.05 (1.7) 0.1±0.1 2.0±0.2 0.2±0.05 3 5.3±0.3 (1.7) 0.5+0.4 −0.2 3H7 4 2 4.4±0.2 5.3±0.3 7.0+0.2 −0.7 4 7.0+0.2 −0.7 *( ) : Reference Dimensions 0.5+0.4 −0.2 0.1±0.1 2.0±0.2 2 Date code 1 0.4±0.1 4 2.6±0.3 1 1.27±0.25 SHARP mark "S" Anode mark Date code 0.4±0.1 1.27±0.25 2.6±0.3 SHARP mark "S" Anode mark *( ) : Reference Dimensions Product mass : approx. 0.05g Sheet No.: D2-A01901EN 2 PC3H7 Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Rank mark Refer to the Model Line-up table Sheet No.: D2-A01901EN 3 PC3H7 Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 *4 80 6 50 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s *4 Up to Date code "P9" (September 2002) VCEO : 70V. ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse Current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=1mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − − *5 80 6 0.2 − 5×1010 − − − TYP. 1.2 − 30 − − − − 0.1 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 4.0 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs *5 Up to Date code "P9" (September 2002) BVCEO≥70V. Sheet No.: D2-A01901EN 4 PC3H7 Series ■ Model Line-up Package VDE0884 Model No. Taping 3 000pcs/reel Approved PC3H7 PC3H7Y PC3H7Y1 PC3H7A PC3H7Y2 PC3H7B PC3H7Y3 PC3H7C PC3H7Y4 PC3H7D PC3H7Y5 PC3H7AB PC3H7Y6 PC3H7BC PC3H7Y7 PC3H7CD PC3H7Y8 PC3H7AC PC3H7Y9 PC3H7BD PC3H7Y0 PC3H7AD Rank mark IC [mA] (IF=1mA, VCE=5V, Ta=25˚C) with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D 0.2 to 4.0 0.35 to 0.7 0.5 to 1.0 0.8 to 1.6 1.2 to 2.4 0.35 to 1.0 0.5 to 1.6 0.8 to 2.4 0.35 to 1.6 0.5 to 2.4 0.35 to 2.4 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A01901EN 5 PC3H7 Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 100 80 70 60 40 20 0 −30 125 0 200 150 100 50 25 50 75 100 150 100 50 0 25 50 75 100 125 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage 100 Pulse width≤100µs Ta=25˚C 50˚C 75˚C 100˚C 2 000 Forward current IF (mA) Peak forward current IFM (mA) 125 170 0 −30 125 Fig.5 Peak Forward Current vs. Duty Ratio 5 000 100 200 Ambient temperature Ta (˚C) 10 000 75 Fig.4 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.3 Collector Power Dissipation vs. Ambient Temperature 0 50 55 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 0 −30 25 1 000 500 200 100 50 10 25˚C 0˚C − 30˚C 1 20 10 5 5 10−3 2 5 10−2 2 5 10−1 2 5 1 0 Duty ratio 0.5 1.0 1.5 2.0 Forward voltage VF (V) Sheet No.: D2-A01901EN 6 PC3H7 Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 500 IF=30mA 400 300 200 100 Ta=25˚C PC (max) 50 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 20mA 10mA 40 30 5mA 20 10 1mA 0 0 0.1 1 10 0 100 2 Forward current IF (mA) Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 6 8 10 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 150% 0.16 Collector-emitter saturation voltage VCE (sat) (V) IF=1mA,VCE=5V Relative current transfer ratio (%) 4 Collector-emitter voltage VCE (V) IF=5mA,VCE=5V 100% 50% IF=20mA IC=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0% −40 −20 0 20 40 60 80 0.00 −30 100 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature 10−5 5 1 000 VCE=50V 500 10 200 5 40 60 80 100 VCE=2V IC=2mA Ta=25˚C 100 −7 Response time (µs) Collector dark current ICEO (A) 20 Fig.12 Response Time vs. Load Resistance −6 10 5 10−8 5 10−9 5 50 20 10 5 tr tf td ts 2 1 10−10 5 10−11 −30 0 Ambient temperature Ta (˚C) 0.5 0 20 40 60 80 Ambient temperature Ta (˚C) 0.2 0.1 0.01 100 0.1 1 10 100 Load resistance RL (kΩ) Sheet No.: D2-A01901EN 7 PC3H7 Series Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current VCC RL Collector-emitter saturation voltage VCE (sat) (V) RD Ta=25˚C 10 Output Input Output Input 10% VCE td tr ts tf 90% Please refer to the conditions in Fig.12 IC=0.5mA 8 1mA 3mA 6 5mA 7mA 4 2 0 0 2 4 6 8 10 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A01901EN 8 PC3H7 Series ■ Design Considerations ● Design guide While operating at IF