PC3Q410NIP0F

PC3Q410NIP0F Mini-flat Half Pitch 4-channel Package, High CMR, AC Input, Low Input Current Photocoupler PC3Q410NIP0F ∗ 1-channel package type is also available. (model No. PC3H41xNIP0F Series) ■ Description ■ Agency approvals/Compliance PC3Q410NIP0F contains a IRED optically coupled to a phototransistor. It is packaged in a 4 channel Mini-flat, half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter Voltage is 80V, CTR is 50% to 400% at input current of ±0.5mA and CMR is MIN. 10kV/µs. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3Q41) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers 2. Facsimiles 3. Telephones ■ Features 1. 4-channel Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. AC input type 4. Low input current type (IF=±0.5mA) 5. High collector-emitter voltage (VCEO : 80V) 6. High noise immunity due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 7. Isolation voltage between input and output (Viso(rms) : 2.5kV) 8. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02202EN Date Jun. 30. 2005 © SHARP Corporation PC3Q410NIP0F ■ Internal Connection Diagram 16 15 14 13 12 11 10 9 Anode / Cathode Cathode / Anode 9 11 13 15 Emitter 10 12 14 16 Collector 1 3 5 7 2 4 6 8 1 2 3 4 5 6 7 ■ Outline Dimensions 8 (Unit : mm) Date code 10.3±0.3 1.27±0.25 16 9 4.4±0.2 SHARP mark "S" PC3Q41 1 8 0.4±0.1 Primary side mark 5.3±0.3 0.2±0.05 Epoxy resin 0.1±0.1 2.6±0.2 C0.4 (Input side) 6° 45˚ 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.3g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A02202EN 2 PC3Q410NIP0F Date code (3 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D 3rd digit Week of production Week Mark 1st 1 2nd 2 3rd 3 4th 4 5, 6th 5 repeats in a 20 year cycle Country of origin Japan Rank mark There is no rank mark indicator. Sheet No.: D2-A02202EN 3 PC3Q410NIP0F ■ Absolute Maximum Ratings Output Input Parameter Symbol IF Forward current *1 Peak forward current IFM P Power dissipation Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating ±10 ±200 15 80 6 50 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA mA mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Symbol Parameter Forward voltage VF Ct Terminal capacitance ICEO Collector dark current Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Common mode rejection voltage CMR Conditions IF=±5mA V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=±0.5mA, VCE=5V IF=±10mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak), IF=0, VCC=9V, Vnp=100mV MIN. − − − 80 6 0.25 − 5×1010 − − − TYP. 1.2 30 − − − − − 1×1011 0.6 4 3 MAX. 1.4 250 100 − − 2.0 0.2 − 1.0 18 18 (Ta=25˚C) Unit V pF nA V V mA V Ω pF µs µs 10 − − kV/µs Sheet No.: D2-A02202EN 4 PC3Q410NIP0F Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCM RL 1) VCC Vnp  VCM : High wave  pulse   RL=470Ω  VCC=9V VCM Vnp Vcp VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.3 Diode Power Dissipation vs. Ambient Temperature Fig.2 Forward Current vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) 15 10 5 0 −30 0 25 50 75 100 15 10 5 0 −30 125 0 Fig.4 Collector Power Dissipation vs. Ambient Temperature 75 100 125 250 Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 50 Fig.5 Total Power Dissipation vs. Ambient Temperature 250 200 150 100 50 0 −30 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 0 25 50 75 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Sheet No.: D2-A02202EN 5 PC3Q410NIP0F Fig.7 Forward Current vs. Forward Voltage Fig.6 Peak Forward Current vs. Duty Ratio Forward current IF (mA) 1 000 Peak forward current IFM (mA) 100 Pulse width≤100µs Ta=25˚C 100 10 10−3 10−2 10 Ta=25˚C Ta=100˚C Ta=0˚C Ta=75˚C 1 Ta=−25˚C Ta=50˚C 0.1 10−1 1 0 0.5 Duty ratio 1 2 1.5 Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current Fig.9 Collector Current vs. Collector-emitter Voltage 40 500 Ta=25˚C PC (MAX.) 400 Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 300 200 30 IF=7mA 20 IF=5mA IF=3mA 10 IF=2mA 100 IF=0.5mA IF=1mA 0 0.1 0 1 0 10 Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 4 6 8 10 Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 150 Relative current transfer ratio (%) 2 Collector-emitter voltage VCE (V) Forward current IF (mA) VCE=5V IF=0.5mA 100 50 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) 0.16 IF=10mA IC=1mA 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Sheet No.: D2-A02202EN 6 PC3Q410NIP0F Fig.12 Collector Dark Current vs. Ambient Temperature 100 VCE=50V VCE=2V, IC=2mA 10−6 10−7 Responce time (µs) Collector dark current ICEO (A) 10−5 Fig.13 Response Time vs. Load Resistance (active region) 10−8 10−9 tr tf 10 td ts 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 1 0.1 1 Ambient temperature Ta (˚C) Load resistance RL (kΩ) Fig.14 Response Time vs. Load Resistance (saturation region) 1 000 Fig.15 Test Circuit for Response Time Vcc=5V, IF=1mA, Ta=25˚C VCC RL RD tf Responce time (µs) 10 Output Input Output Input ts 100 10% VCE ts tf td tr 10 tr Please refer to the conditions in Fig.13 and Fig.14 td 1 90% 100 10 1 Load resistance RL (kΩ) Fig.16 Frequency Response Fig.17 Collector-emitter Saturation Voltage vs. Forward Current VCE=2V IC=2mA Ta=25˚C 0 Voltage gain AV (dB) Collector-emitter saturation voltage VCE (sat) (V) 5 RL=10kΩ −5 1kΩ −10 100Ω −15 −20 −25 0.1 1 10 100 1 000 5 IC=7mA 4 IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 1 0 0 Frequency f (kHz) Ta=25˚C IC=5mA 2 4 6 8 10 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02202EN 7 PC3Q410NIP0F ■ Design Considerations ● Design guide While operating at IF