PC3Q510NIP0F

PC3Q510NIP0F Mini-flat Half Pitch 4-channel Package Darlington Phototransistor Output, Low Input Current Photocoupler PC3Q510NIP0F ∗ 1-channel package type is also available. (model No. PC3H510NIP0F) ■ Description ■ Agency approvals/Compliance PC3Q510NIP0F contains a IRED optically coupled to a phototransistor. It is packaged in a 4 channel Mini-flat package, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. CTR is MIN. 600% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3Q51) 2. Package resin : UL flammability grade (94V-0) ■ Applications ■ Features 1. Programmable controllers 2. Facsimiles 3. Telephones 1. 4-channel Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. Darlington phototransistor output (CTR : MIN. 600% at IF=0.5mA,VCE=2V) 5. Isolation voltage (Viso(rms) : 2.5kV) 6. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02402EN Date Jun. 30. 2005 © SHARP Corporation PC3Q510NIP0F ■ Internal Connection Diagram 16 15 14 13 12 11 10 9 1 3 5 7 2 4 6 8 9 11 13 15 10 12 14 16 1 2 3 4 5 6 7 Anode Cathode Emitter Collector 8 ■ Outline Dimensions (Unit : mm) 10.3±0.3 1.27±0.25 16 9 Date code 4.4±0.2 SHARP mark "S" PC3Q51 1 8 0.4±0.1 C0.4 (Input side) 0.2±0.05 Epoxy resin 0.1±0.1 2.6±0.2 Primary side mark 6˚ 5.3±0.3 45° 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.3g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A02402EN 2 PC3Q510NIP0F Date code (3 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D 3rd digit Week of production Week Mark 1st 1 2nd 2 3rd 3 4th 4 5, 6th 5 repeats in a 20 year cycle Country of origin Japan Rank mark There is no rank mark indicator. Sheet No.: D2-A02402EN 3 PC3Q510NIP0F ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 10 200 6 15 35 6 80 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Conditions IF=5mA VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=2V IF=1mA, IC=2mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=10mA, RL=100Ω MIN. − − − − 35 6 3 − 5×1010 − − − TYP. 1.2 − 30 − − − 14 − 1×1011 0.6 60 53 MAX. 1.4 10 250 1000 − − 60 1.0 − 1.0 300 250 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A02402EN 4 PC3Q510NIP0F Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature Diode power dissipation P (mW) Forward current I F (mA) 15 10 5 0 −30 0 25 50 75 100 15 10 5 0 −30 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 50 75 100 125 250 200 150 100 50 0 −30 0 25 50 75 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) Forward current IF (mA) 10−2 10−1 50 75 100 125 100 100 10−3 25 Fig.6 Forward Current vs. Forward Voltage Pulse width≤100µs Ta=25˚C 1 000 0 Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio Peak forward current IFM (mA) 25 Fig.4 Total Power Dissipation vs. Ambient Temperature 250 10 0 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 10 Ta=100˚C Ta=75˚C 25˚C 0˚C 50˚C −25˚C 1 0.1 1 0 Duty ratio 0.5 1 1.5 2 Forward voltage VF (V) Sheet No.: D2-A02402EN 5 PC3Q510NIP0F Fig.8 Collector Current vs. Forward Current Fig.7 Current Transfer Ratio vs. Forward Current 4 000 3 500 3 000 Collector current IC (mA) Current transfer ratio CTR (%) 100 VCE=2V Ta=25˚C 2 500 2 000 1 500 VCE=2V Ta=25˚C 10 1 1 000 500 0 0.1 1 0.1 0.1 10 1 Forward current IF (mA) Forward current IF (mA) Fig.9 Collector Current vs. Collector-emitter Voltage Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 120 140 Pc(MAX) Relative current transfer ratio (%) Collector current IC (mA) Ta=25˚C IF=7.0mA 100 IF=5.0mA 80 IF=3.0mA 60 IF=2.0mA 40 IF=1.0mA IF=0.7mA 20 120 IF=0.5mA VCE=2V 100 80 60 40 20 IF=0.5mA 0 0 1 2 3 4 0 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 5 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Fig.12 Collector Dark Current vs. Ambient Temperature 10−4 1.2 IF=1mA IC=2mA VCE=10V 10−5 1 Collector dark current ICEO (A) Collector-emitter saturation voltage VCE (sat) (V) 10 0.8 0.6 0.4 10−6 10−7 10−8 10−9 0.2 10−10 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A02402EN 6 PC3Q510NIP0F Fig.13 Response Time vs. Load Resistance Fig.14 Test Circuit for Response Time 1 000 VCC VCE=2V IC=10mA Ta=25˚C Input Input Response time (µs) tr 100 RD RL Output Output 10% tf 90% ts td ts tr td tf 10 Please refer to the conditions in Fig.13 1 0.01 0.1 1 Load resistance RL (kΩ) 10 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02402EN 7 PC3Q510NIP0F ■ Design Considerations ● Design guide While operating at IF