PC3Q65J0000F

PC3Q65J0000F Series Mini-flat Half Pitch 4-channel Package Darlington Phototransistor Output Photocoupler PC3Q65J0000F Series * 1-channel package type is also available. (model No. PC3H5J0000F Series) ■ Description ■ Agency approvals/Compliance PC3Q65J0000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4 channel Mini-flat, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. CTR is MIN. 600% at input current of 1mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3Q65) 2. Approved by VDE, DIN EN60747-5-2 ( * ) (as an option), file No. 40009162 (as model No. PC3Q65) 3. Package resin : UL flammability grade (94V-0) (*) DIN EN60747-5-2 : successor standard of DIN VDE0884 ■ Features ■ Applications 1. 4 channel Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. Darlington phototransistor output (CTR : MIN. 600% at IF=1mA, VCE=2V) 4. Isolation voltage between input and output (Viso(rms)=2.5kV) 5. Lead-free and RoHS directive compliant 1. Programmable controllers 2. Facsimiles 3. Telephones Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A01802EN Date Jun. 30. 2005 © SHARP Corporation PC3Q65J0000F Series ■ Internal Connection Diagram 16 15 14 13 12 11 10 9 1 3 5 7 2 4 6 8 9 11 13 15 10 12 14 16 1 2 3 4 5 6 7 Anode Cathode Emitter Collector 8 ■ Outline Dimensions (Unit : mm) VDE option 10.3±0.3 10.3±0.3 1.27±0.25 1.27 16 PC3 Q 6 5 1 SHARP mark "S" Date code 9 16 4.4±0.2 SHARP mark "S" 8 PC3Q65 4 0.4±0.1 1 Primary side mark Date code 9 0.4±0.1 4.4±0.2 ±0.25 VDE Indenfication mark 8 45° 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.3g 0.2±0.05 2.6±0.2 0.2±0.05 6˚ 5.3±0.3 0.1±0.1 0.1±0.1 2.6±0.2 Primary side mark 6˚ 5.3±0.3 45° 0.5+-0.4 0.2 7.0+-0.2 0.7 Product mass : approx. 0.3g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A01802EN 2 PC3Q65J0000F Series Date code (3 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D 3rd digit Week of production Week Mark 1st 1 2nd 2 3rd 3 4th 4 5, 6th 5 repeats in a 20 year cycle Country of origin Japan Rank mark There is no rank mark indicator. Sheet No.: D2-A01802EN 3 PC3Q65J0000F Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 35 6 80 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=1mA, VCE=2V IF=1mA, IC=2mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 35 6 6 − 5×1010 − − − TYP. 1.2 − 30 − − − 16 0.8 1×1011 0.6 60 53 MAX. 1.4 10 250 1000 − − 75 1.0 − 1.0 300 250 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A01802EN 4 PC3Q65J0000F Series ■ Model Line-up Package DIN EN60747-5-2 Model No. Taping 1 000pcs/reel Approved PC3Q65J0000F PC3Q65YJ000F Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A01802EN 5 PC3Q65J0000F Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 100 80 70 60 40 20 0 −30 125 0 Fig.3 Collector Power Dissipation vs. Ambient Temperature 100 125 250 Total power dissipation Ptot (mW) 200 150 100 50 0 −30 0 25 50 75 100 200 170 150 100 50 0 −30 125 0 Fig.5 Peak Forward Current vs. Duty Ratio 50 75 50˚C Forward current IF (mA) 100 10−2 10−1 125 Ta= 75˚C 25˚C 0˚C 100 10−3 100 Fig.6 Forward Current vs. Forward Voltage Pulse width≤100µs Ta=25˚C 1 000 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 10 75 Fig.4 Total Power Dissipation vs. Ambient Temperature 250 Collector power dissipation PC (mW) 50 55 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Peak forward current IFM (mA) 25 −25˚C 10 1 1 Duty ratio 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage VF (V) Sheet No.: D2-A01802EN 6 PC3Q65J0000F Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 100 2 000 VCE=2V Ta=25˚C Ta=25˚C 90 80 1 600 Collector current IC (mA) Current transfer ratio CTR(%) 1 800 1 400 1 200 1 000 800 600 IF=10mA 70 PC (MAX.) 60 5mA 50 40 2mA 30 400 20 200 0 0.1 10 1mA 0 1 0 10 1 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter saturation voltage VCE(sat) (V) Relative current transfer ratio (%) 4 1.3 IF=1mA VCE=2V 100 50 0 25 50 5 75 100 IF=1mA IC=2mA 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −30 0 Ambient temperature Ta (˚C) 25 50 75 100 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature Fig.12 Collector-emitter Saturation Voltage vs. Forward Current 10−4 8 VCE=10V Collector-emitter Saturation Voltage VCE (sat) (V) 10−5 Collector dark current ICEO (A) 3 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 150 0 −30 2 Collector-emitter voltage VCE (V) Forward current IF (mA) 10−6 10−7 −8 10 −9 10 10−10 Ta=25˚C IC=0.5mA 7 1mA 6 3mA 5 5mA 7mA 4 50mA 3 2 30mA 1 10−11 −30 0 20 40 60 80 0 100 Ambient temperature Ta (˚C) 0 0.5 1 1.5 2 2.5 3 3.5 4 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A01802EN 7 PC3Q65J0000F Series ■ Design Considerations ● Design guide While operating at IF