PC3Q67QJ000F

PC3Q67QJ000F Series Mini-flat Half Pitch 4-channel Package, General Purpose Photocoupler PC3Q67QJ000F Series * 1-channel package type is also available. (model No. PC3H7J00000F Series) ■ Description ■ Agency approvals/Compliance PC3Q67QJ000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4 channel Mini-flat package, Half ptich type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 80V and CTR is 50% to 600% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3Q67Q) 2. Approved by VDE, DIN EN60747-5-2 ( * ) (as an option), file No. 40009162 (as model No. PC3Q67Q) 3. Package resin : UL flammability grade (94V-0) ■ Features ■ Applications 1. 4 channel Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V) 4. Current transfer ratio (CTR : MIN. 50% at IF=5mA, VCE=5V) 5. Isolation voltage between input and output (Viso(rms) : 2.5kV) 6. Lead-free and RoHS directive compliant 1. Programmable controllers (*) DIN EN60747-5-2 : successor standard of DIN VDE0884 Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02002EN Date Jun. 30. 2005 © SHARP Corporation PC3Q67QJ000F Series ■ Internal Connection Diagram 16 15 14 13 12 11 10 9 1 3 5 7 2 4 6 8 9 11 13 15 10 12 14 16 1 2 3 4 5 6 7 Anode Cathode Emitter Collector 8 ■ Outline Dimensions (Unit : mm) VDE option 10.3±0.3 1.27±0.25 16 16 4.4±0.2 PC3Q 6 7 Q 1 SHARP mark "S" Date code 9 8 PC3Q67Q 4 0.4±0.1 1 Primary side mark Date code 9 0.4±0.1 4.4±0.2 1.27±0.25 SHARP mark "S" 10.3±0.3 VDE Indenfication mark 8 45° 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.3g 0.2±0.05 2.6±0.2 0.2±0.05 6˚ 5.3±0.3 0.1±0.1 0.1±0.1 2.6±0.2 Primary side mark 6˚ 5.3±0.3 45° 0.5+-0.4 0.2 7.0+-0.2 0.7 Product mass : approx. 0.3g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A02002EN 2 PC3Q67QJ000F Series Date code (3 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D 3rd digit Week of production Week Mark 1st 1 2nd 2 3rd 3 4th 4 5, 6th 5 repeats in a 20 year cycle Country of origin Japan Rank mark There is no rank mark indicator. Sheet No.: D2-A02002EN 3 PC3Q67QJ000F Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 80 6 50 150 170 -30 to +100 -40 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width£100ms, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse Current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 80 6 2.5 − 5×1010 − − − TYP. 1.2 − 30 − − − 5.0 0.1 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 30.0 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A02002EN 4 PC3Q67QJ000F Series ■ Model Line-up Taping 1 000pcs/reel DIN EN60747-5-2 Approved Model No. PC3Q67QJ000F PC3Q67QYJ00F Package Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A02002EN 5 PC3Q67QJ000F Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 100 80 70 60 40 20 0 −30 125 0 Fig.3 Collector Power Dissipation vs. Ambient Temperature 75 100 125 Fig.4 Total Power Dissipation vs. Ambient Temperature 250 250 Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 50 55 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 200 150 100 50 0 −30 0 25 50 75 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 10 000 0 25 50 75 100 125 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100ms Ta=25˚C Forward current IF (mA) Peak forward current IFM (mA) 25 1 000 100 T a =50˚C 75˚C 100˚C 10 25˚C 0˚C − 30˚C 1 10 10−3 10−2 Duty ratio 10−1 0.1 1 0 0.5 1 1.5 2 Forward voltage VF (V) Sheet No.: D2-A02002EN 6 PC3Q67QJ000F Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 500 Ta=25˚C Pc (max) 50 IF=30mA 20mA 400 10mA Collector current IC (mA) Current transfer ratio CTR (%) VCE=5V Ta=25˚C 300 200 100 40 30 5mA 20 10 1mA 0 0 0.1 1 10 100 8 2 4 6 Collector-emitter voltage VCE (V) 0 Forward current IF (mA) Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 150 0.16 IF=1mA,VCE=5V IF=20mA IC=1mA 0.14 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 10 IF=5mA,VCE=5V 100 50 0.12 0.1 0.08 0.06 0.04 0.02 0 −40 −20 0 20 40 60 80 0 −30 100 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature 0 20 40 60 80 Ambient temperature Ta (˚C) 100 Fig.12 Response Time vs. Load Resistance 1 000 10−5 VCE=2V IC=2mA Ta=25˚C VCE=50V 100 Response time (µs) Collector dark current ICEO (A) 10−6 10−7 10−8 10−9 tr 10 tf td ts 1 10−10 10−11 −30 0.1 0.01 0 20 40 60 80 Ambient temperature Ta (˚C) 100 0.1 1 10 Load resistance RL (kΩ) 100 Sheet No.: D2-A02002EN 7 PC3Q67QJ000F Series Fig.13 Test Circuit for Response Time Fig.14 Collector-emitter Saturation Voltage vs. Forward Current RD RL Collector-emitter saturation voltage VCE (sat) (V) VCC Output Input Output Input 10% VCE td tr ts tf 90% Please refer to the conditions in Fig.12 Ta=25˚C 10 IC=0.5mA 8 1mA 3mA 6 5mA 7mA 4 2 0 0 2 4 6 8 Forward current IF (mA) 10 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02002EN 8 PC3Q67QJ000F Series ■ Design Considerations ● Design guide While operating at IF