PC451J00000F

PC451J00000F Series PC451J00000F Series Mini-flat Package, High Collector-emitter Voltage Photocoupler ■ Description PC451J00000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 350V. CTR is MIN. 40% at input current of 5mA. ■ Agency approvals/Compliance 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC451) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Telephones 2. Modems ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 350V) 4. High isolation voltage between input and output (Viso(rms) : 3.75kV) 5. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00302EN Date Jun. 30. 2005 © SHARP Corporation PC451J00000F Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions 3.6±0.3 2.54±0.25 4 3 (Unit : mm) SHARP mark "s" Date code Anode mark 451 1 2 4.4±0.2 0.4±0.1 Factory identification mark Epoxy resin 0.2±0.05 5.3±0.3 45˚ 0.1±0.1 2.6±0.2 6˚ 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A00302EN 2 PC451J00000F Series Date code (2 digit) 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M · · N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark P R S T U V W X A B C · · · repeats in a 20 year cycle Factory identification mark Factory identification Mark no mark Japan Indonesia China * This factory marking is for identification purpose only. Please Contact the local SHARP sales reprsentative to see the actual status of the production. Country of origin Rank mark There is no rank mark indicator. Sheet No.: D2-A00302EN 3 PC451J00000F Series ■ Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Isolation voltage *2 Soldering temperature Symbol IF VR P VCEO VECO IC PC Ptot Topr Tstg Viso (rms) Tsol Rating 50 6 70 350 6 50 150 170 −25 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA V mW V V mA mW mW ˚C ˚C kV ˚C *1 40 to 60%RH, AC for 1 minute, f=60Hz *2 For 10s ■ Electro-optical Characteristics Parameter Symbol Forward voltage VF IR Reverse Current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf fC Cut-off frequency tr Rise time Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=200V, IF=0 IC=0.1mA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω, −3dB Output Input Input Output Transfer characteristics VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 350 2 − 5×1010 − − − − TYP. 1.2 − 30 − − 4 0.1 1×1011 0.6 50 4 5 MAX. 1.4 10 250 1000 − − 0.3 − 1.0 − 10 12 (Ta=25˚C) Unit V µA pF nA V mA V Ω pF kHz µs µs Sheet No.: D2-A00302EN 4 PC451J00000F Series ■ Model Line-up Package Model No. Taping 3 000 pcs/reel 750 pcs/reel PC451J00000F PC451TJ0000F Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A00302EN 5 PC451J00000F Series Fig.1 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) Forward current IF (mA) Fig.2 Diode Power Dissipation vs. Ambient Temperature 120 100 80 70 60 40 40 30 20 10 0 −25 20 0 −25 0 25 50 55 75 100 125 0 25 50 55 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC ( mW ) Fig.4 Total Power Dissipation vs. Ambient Temperature 300 250 200 170 150 150 100 Total power dissipation P tot (mW) 100 50 0 −25 50 0 −25 0 25 50 75 100 125 0 25 50 75 100 125 Ambient temperature Ta (˚C ) Ambient temperature Ta ( ˚C ) Fig.5 Peak Forward Current vs. Duty Ratio 10 000 Pulse width≤100µs Ta= 25˚C Peak forward current IFM ( mA) Fig.6 Forward Current vs. Forward Voltage Ta= 75˚C 50˚C 25˚C 0˚C −25˚C 1 000 Forward current IF (mA) 10−3 10−2 Duty ratio 10−1 1 100 10 100 10 1 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage VF (V) Sheet No.: D2-A00302EN 6 PC451J00000F Series Fig.7 Current Transfer Ratio vs. Forward Current 100 VCE =5V T a = 25˚C Current transfer ratio CTR ( % ) Collector current IC ( mA ) 20 IF=30mA 25 mA A 20m Fig.8 Collector Current vs. Collector-emitter Voltage Ta=25˚C P C ( MAX. ) 15mA 50 10 10mA 5mA 0 1 10 Forward current IF ( mA ) 100 0 0 5 Collector-emitter voltage VCE ( V ) 10 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 150 I F=5mA VCE=5V Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 Collector-emitter saturation voltage VCE(sat) ( V) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 − 25 0 25 50 75 100 I F=20mA IC=1mA Relative current transfer ratio ( % ) 100 50 0 −25 0 25 50 75 100 Ambient temperature Ta ( ˚C) Ambient temperature T a (˚C ) Fig.11 Collector Dark Current vs. Ambient Temperature 10−5 VCE =200V 10−6 Collector dark current ICEO (A) Fig.12 Response Time vs. Load Resistance VCE=2V IC =2mA 100 Response time (µs) Ta=25˚C tr 10 td tf 10−7 10−8 10−9 10−10 10−11 −25 1 ts 0 25 50 75 100 0.1 0.01 0.1 1 10 Ambient temperature Ta (˚C ) Load resistance RL ( k Ω ) Sheet No.: D2-A00302EN 7 PC451J00000F Series Fig.13 Test Circuit for Response Time VCC RD Input VCE td tr ts tf 90% RL Output Input 10% Voltage gain Av (dB) Output 0 Fig.14 Frequency Response VCE=5V IC=2mA T a=25˚C 100 Ω RL=10k Ω 1k Ω −10 Please refer to the conditions in Fig.12 −20 1 10 Frequency f ( kHz ) 100 Fig.15 Test Circuit for Frequency Response VCC Fig.16 Collector-emitter Saturation Voltage vs. Forward Current 6 Collector-emitter saturation voltage VCE(sat) (V) Ta=25˚C 5 4 3 2 1 7mA 5mA 3mA RD RL Output VCE 1mA IC = 0.5mA Please refer to the conditions in Fig.14 0 0 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00302EN 8 PC451J00000F Series ■ Design Considerations ● Design guide While operating at IF