PC4H510NIP

PC4H510NIP PC4H510NIP Mini-flat Half-pitch Package, High Collector-emitter Voltage Photocoupler ■ Description ■ Agency approvals/Compliance PC4H510NIP contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 350V and CTR is 40% to 240% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC4H51) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Modems ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 350V) 4. Isolation voltage between input and output (Viso(rms) : 2.5kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02701EN Date Sep. 30. 2003 © SHARP Corporation PC4H510NIP ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 ■ Outline Dimensions Anode Cathode Emitter Collector (Unit : mm) SHARP mark "S" Anode mark Date code 4 4H51 3 4.4±0.2 1.27 ±0.25 2 0.4±0.1 2.6±0.3 1 5.3±0.3 (1.7) 7.0+0.2 −0.7 0.5+0.4 −0.2 0.1±0.1 2.0±0.2 0.2±0.05 Epoxy resin *( ) : Reference Dimensions Product mass : approx. 0.05g Sheet No.: D2-A02701EN 2 PC4H510NIP Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Sheet No.: D2-A02701EN 3 PC4H510NIP ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 350 6 50 150 170 −25 to +100 −55 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Cut-off frequency fC Rise time tr Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=200V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω −3dB VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 350 6 2.0 − 5×1010 − − − − TYP. 1.2 − 30 − − − 4.0 0.1 1×1011 0.6 50 4 5 MAX. 1.4 10 250 1 − − 12.0 0.3 − 1.0 − 10 12 (Ta=25˚C) Unit V µA pF µA V V mA V Ω pF kHz µs µs Sheet No.: D2-A02701EN 4 PC4H510NIP Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −25 0 25 50 55 75 100 80 70 60 40 20 0 −25 125 0 200 150 100 50 25 50 75 100 125 100 200 170 150 100 50 0 −25 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 100 2 000 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 75 Fig.4 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.3 Collector Power Dissipation vs. Ambient Temperature 0 50 55 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 0 −25 25 500 200 100 50 Ta=100˚C Ta=−25˚C 10 Ta=75˚C Ta=0˚C Ta=25˚C Ta=50˚C 1 20 10 5 10−3 2 5 10 −2 2 −2 5 10 0.1 2 5 1 0 Duty ratio 0.5 1 1.5 2 Forward voltage VF (V) Sheet No.: D2-A02701EN 5 PC4H510NIP Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 200 30 VCE=5V Ta=25˚C PC (MAX.)=150mW 140 120 100 80 60 Ta=25˚C IF=30mA 25 160 Collector current IC (mA) Current transfer ratio CTR (%) 180 25mA 20mA 20 15mA 15 10mA 10 5mA 40 5 20 0 0.1 0 1 10 0 100 2 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter saturation voltage VCE (SAT) (V) Relative current transfer ratio (%) 8 IF=5mA VCE=5V 80 60 40 20 0 −25 −20 −10 0 10 20 30 40 50 60 70 80 90 100 0.16 IF=20mA IC=1mA 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 −25 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature Fig.12 Response Time vs. Load Resistance (active region) 100 VCE=200V VCE=2V IC=2mA 10−5 10−6 Response time (µs) Collector dark current Iceo (A) 10 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 100 10−4 6 Collector-emitter voltage VCE (V) Forward current IF (mA) 120 4 10−7 10−8 tf 10 tr td 1 ts 10−9 10−10 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 0.1 0.1 1 10 Load resistance RL (kΩ) Ambient temperature Ta (˚C) Sheet No.: D2-A02701EN 6 PC4H510NIP Fig.13 Response Time vs. Load Resistance (saturation region) 1000 Fig.14 Test Circuit for Response Time VCC VCC=5V IF=16mA ts RD Response time (µs) 100 RL Output Input Output Input 10% VCE tf 10 ts tf td tr 90% tr 1 Please refer to the conditions in Fig.12 and Fig.13 td 0.1 1 td 10 Load resistance RL (kΩ) 100 Collector-emitter saturation voltage VCE (SAT) (V) Fig.15 Collector-emitter Saturation Voltage vs. Forward Current 5 Ta=25˚C 4 IC=7mA IF=5mA 3 IF=3mA IF=1mA 2 IF=0.5mA 1 0 0 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02701EN 7 PC4H510NIP ■ Design Considerations ● Design guide While operating at IF