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PC4H520NIP

PC4H520NIP

  • 厂商:

    SHARP(夏普)

  • 封装:

    4-SOIC(0.173",4.40mm)

  • 描述:

    OPTOISOLATOR 2.5KV DARL 4SMD

  • 数据手册
  • 价格&库存
PC4H520NIP 数据手册
PC4H520NIP PC4H520NIP Mini-flat Half-pitch Package Darlington Phototransistor Output High Collector-emitter Voltage Photocoupler ■ Description ■ Agency approvals/Compliance PC4H520NIP contains a IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 350V and CTR is MIN. 1000% at input current of 1mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC4H52) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Modems ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 350V) 4. Darlington phototransistor output (CTR : MIN.1000% IF=lmA,VCE=2V) 5. Isolation voltage between input and output (Viso(rms): 2.5kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02801EN Date Sep. 30. 2003 © SHARP Corporation PC4H520NIP ■ Internal Connection Diagram 1 4 1 3 4 2 3 5 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) SHARP mark "S" Date code Primary side mark 4 4H52 3 4.4±0.2 1.27 ±0.25 2 0.4±0.1 2.6±0.3 1 5.3±0.3 (1.7) 0.5+0.4 −0.2 7.0+0.2 −0.7 0.1±0.1 2.0±0.2 0.2±0.05 Epoxy resin *( ) : Reference Dimensions Product mass : approx. 0.05g Sheet No.: D2-A02801EN 2 PC4H520NIP Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Sheet No.: D2-A02801EN 3 PC4H520NIP ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *2 Peak forward current IFM Reverse voltage VR *1 Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current *1 Collector power dissipation PC *1 Total power dissipation Ptot Topr Operating temperature Tstg Storage temperature *3 Isolation voltage Viso (rms) *4 Soldering temperature Tsol Rating 50 1 6 70 350 0.1 120 180 210 −40 to +100 −55 to +125 2.5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Mounted glass epoxy PCB (Size : 20mm×20mm×1.6mm) *2 Pulse width≤100µs, Duty ratio : 0.001 *3 40 to 60%RH, AC for 1 minute, f=60Hz *4 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Cut-off frequency fC Rise time tr Response time Fall time tf Conditions IF=10mA VR=4V V=0, f=1kHz VCE=200V, IF=0 IC=0.1mA, IF=0 IF=1mA, VCE=2V IF=20mA, IC=100mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=20mA, RL=100Ω −3dB VCE=2V, IC=20mA, RL=100Ω MIN. − − − − 350 10 − 5×1010 − 1 − − TYP. 1.2 − 30 − − 40 − 1×1011 0.6 7 100 20 MAX. 1.4 10 250 200 − 120 1.4 − 1.0 − 300 100 (Ta=25˚C) Unit V µA pF µA V mA V Ω pF kHz µs µs Sheet No.: D2-A02801EN 4 PC4H520NIP Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −40 0 25 50 55 75 100 80 70 60 40 20 0 −40 125 0 25 50 55 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 250 200 180 150 100 50 0 −40 0 25 50 75 100 210 200 150 100 50 0 −40 125 Ambient temperature Ta (˚C) 25 50 75 100 125 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 100 2 000 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 0 500 200 100 50 Ta=25˚C 10 Ta=0˚C Ta=100˚C Ta=−25˚C Ta=75˚C 1 Ta=50˚C 20 10 5 10−3 2 −2 5 10 2 −1 5 10 0.1 2 5 1 0 Duty ratio 0.5 1.0 1.5 2.0 Forward voltage VF (V) Sheet No.: D2-A02801EN 5 PC4H520NIP Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 10 000 Ta=25˚C PC (MAX) 8 000 Collector current IC (mA) Current transfer ratio CTR (%) 9 000 150 VCE=2V Ta=25˚C 7 000 6 000 5 000 4 000 3 000 IF=2.5mA IF=2mA 100 IF=1.5mA IF=1mA IF=0.5mA 50 2 000 1 000 0 0 0.1 1 0 10 1 Fig.9 Collector Current vs. Forward Current Relative current transfer ratio (%) Collector current IC (mA) 150 10 1 0.1 1 100 50 0 −40 10 −20 Collector-emitter saturation voltage VCE (sat) (V) −6 Collector dark current ICEO (A) 10 10−7 10−8 10−9 10−10 0 20 40 60 20 40 60 80 100 Fig.12 Collector Sayuration Voltage vs. Ambient Temperature VCE=200V −20 0 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature 10−11 −40 5 IF=1mA VCE=2V Forward current IF (mA) 10−5 4 Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature VCE=2V Ta=25˚C 0.01 0.1 3 Collector-emitter voltage VCE (V) Forward current IF (mA) 100 2 80 100 Ambient temperature Ta (˚C) 2.5 IF=20mA IC=100mA 2.0 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 Ambient temperature Ta (˚C) Sheet No.: D2-A02801EN 6 PC4H520NIP Fig.13 Response Time vs. Load Resistance 1 000 Fig.14 Test Circuit for Response Time VCC VCE=2V IC=20mA Ta=25˚C Input Input Response time (µs) tr RD RL Output Output 10% 100 tf 90% VCE td ts td ts tr tf 10 Please refer to the conditions in Fig.13 1 0.01 0.1 1 Load resistance RL (kΩ) 10 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02801EN 7 PC4H520NIP ■ Design Considerations ● Design guide While operating at IF
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