PC713VxNSZX Series
PC713VxNSZX
Series
DIP 6 pin Includes Base Terminal
Connection Photocoupler
■ Description
■ Agency approvals/Compliance
PC713VxNSZX Series contains an IRED optically
coupled to a phototransistor.
It is packaged in a 6 pin DIP, available in SMT gullwing lead-form option.
Input-output isolation voltage(rms) is 5.0kV.
Collector-emitter voltage is 80V(*) and CTR is 50%
to 600% at input current of 5mA.
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No. PC713V)
2. Approved by TÜV (VDE0884) (as an option) file No.
R-9151576 (as model No. PC713V)
3. Package resin : UL flammability grade (94V-0)
■ Applications
1. Home appliances
2. Programmable controllers
3. Personal computer peripherals
■ Features
1. 6 pin DIP package
2. Double transfer mold package (Ideal for Flow Soldering)
3. With base terminal
4. High collector-emitter voltage (VCEO:80V(*))
5. High isolation voltage between input and output
(Viso(rms) : 5.0kV)
(*) Up to Date code "P7" (July 2002) VCEO : 35V.
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A04301EN
Date Nov. 28. 2003
© SHARP Corporation
PC713VxNSZX Series
■ Internal Connection Diagram
1
1
6
2
5
2
3
4
3
5
4
6
Anode
Cathode
NC
Emitter
Collector
Base
■ Outline Dimensions
(Unit : mm)
1. Through-Hole [ex. PC713VxNSZX]
2. Through-Hole (VDE0884 option) [ex. PC713VxYSZX]
1.2±0.3
1.2±0.3
±0.2
±0.2
0.6
4
PC713V
Anode
mark
1
6
Anode
mark
4
1
7.12
Date code
3
7.62±0.3
Rank mark
2.9±0.5
0.5TYP.
3.5±0.5
2.9±0.5
2
7.12±0.3
7.62±0.3
Rank mark
VDE0884
Identification mark
4
PC713V
Date code
2
3
±0.5
5
0.5TYP.
5
3.5±0.5
6
6.5±0.5
SHARP
mark
"S"
SHARP
mark
"S"
6.5±0.5
0.6
Epoxy resin
θ : 0 to 13˚
3. SMT Gullwing Lead-Form [ex. PC713VxNIPX]
1.2±0.3
0.6±0.2
4
6
6.5±0.5
PC713V
SHARP
mark
"S"
5
PC713V
Anode
mark
4
Date code
Anode
mark
1
2
3
Rank mark
7.12±0.5
0.26±0.1
1.0+0.4
−0
Epoxy resin
Rank mark
7.12±0.5
7.62±0.3
3.5±0.5
2.54±0.25
Date code
3
7.62±0.3
3.5±0.5
2
0.35±0.25
1
VDE0884
Identification mark
4
2.54±0.25
1.0+0.4
−0
10.0+0
−0.5
0.35±0.25
5
θ
θ : 0 to 13˚
0.26±0.1
6
SHARP
mark
"S"
θ
4. SMT Gullwing Lead-Form (VDE0884 option)
[ex. PC713VxYIPX]
1.2±0.3
0.6±0.2
0.5±0.1
2.54±0.25
θ
3.25±0.5
θ
6.5±0.5
0.5±0.1
2.54±0.25
3.25±0.5
Epoxy resin
1.0+0.4
−0
Epoxy resin
1.0+0.4
−0
10.0+0
−0.5
Product mass : approx. 0.36g
Sheet No.: D2-A04301EN
2
PC713VxNSZX Series
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
repeats in a 20 year cycle
Country of origin
Japan
Rank mark
Refer to the Model Line-up
Sheet No.: D2-A04301EN
3
PC713VxNSZX Series
■ Absolute Maximum Ratings
Output
Input
Parameter
Symbol
IF
Forward current
*1
Peak forward current
IFM
Reverse voltage
VR
Power dissipation
P
Collector-emitter voltage VCEO
Emitter-collector voltage VECO
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Ptot
Total power dissipation
Topr
Operating temperature
Tstg
Storage temperature
*2
Isolation voltage
Viso (rms)
*3
Soldering temperature
Tsol
Rating
50
1
6
70
*4
80
6
*4
80
6
50
150
170
−25 to +100
−40 to +125
5
260
(Ta=25˚C)
Unit
mA
A
V
mW
V
V
V
V
mA
mW
mW
˚C
˚C
kV
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1minute, f=60Hz
*3 For 10s
*4 Up to Date code "P7" (July 2002) VCEO : 35V, VCBO : 35V.
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Symbol
Parameter
VF
Forward voltage
Peak forward voltage
VFM
Reverse current
IR
Terminal capacitance
Ct
ICEO
Collector dark current
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage BVEBO
Collector-base breakdown voltage BVCBO
Current transfer ratio
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Cf
Floating capacitance
fC
Cut-off frequency
tr
Rise time
Response time
Fall time
tf
Conditions
IF=20mA
IFM=0.5A
VR=4V
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IC=0.1mA, IF=0
IF=5mA, VCE=5V
IF=20mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=5V, IC=2mA, RL=100Ω −3dB
VCE=2V, IC=2mA, RL=100Ω
MIN.
−
−
−
−
−
*5
80
6
*5
80
2.5
−
5×1010
−
−
−
−
TYP.
1.2
−
−
30
−
−
−
−
−
0.1
1×1011
0.6
80
4
3
MAX.
1.4
3.0
10
250
100
−
−
−
30
0.2
−
1.0
−
18
18
(Ta=25˚C)
Unit
V
V
µA
pF
nA
V
V
V
mA
V
Ω
pF
kHz
µs
µs
*5 Up to Date code "P7" (July 2002) BVCEO≥35V and BVCBO≥35V.
Sheet No.: D2-A04301EN
4
PC713VxNSZX Series
■ Model Line-up
Lead Form
Through-Hole
Package
−−−−−−
PC713V0NSZX
PC713V1NSZX
PC713V2NSZX
Model No. PC713V3NSZX
PC713V5NSZX
PC713V6NSZX
PC713V8NSZX
VDE0884
Sleeve
50pcs / sleeve
Approved
−−−−−−
PC713V0YSZX PC713V0NIZX
PC713V1YSZX PC713V1NIZX
PC713V2YSZX PC713V2NIZX
PC713V3YSZX PC713V3NIZX
PC713V5YSZX PC713V5NIZX
PC713V6YSZX PC713V6NIZX
PC713V8YSZX PC713V8NIZX
SMT Gullwing
Approved
PC713V0YIZX
PC713V1YIZX
PC713V2YIZX
PC713V3YIZX
PC713V5YIZX
PC713V6YIZX
PC713V8YIZX
Taping
Rank mark
1 000pcs / reel
−−−−−−
Approved
PC713V0NIPX PC713V0YIPX with or with out
A
PC713V1NIPX PC713V1YIPX
B
PC713V2NIPX PC713V2YIPX
C
PC713V3NIPX PC713V3YIPX
A or B
PC713V5NIPX PC713V5YIPX
B or C
PC713V6NIPX PC713V6YIPX
PC713V8NIPX PC713V8YIPX A, B or C
IC [mA]
(IF=5mA,
VCE=5V,
Ta=25˚C)
2.5 to 30.0
4.0 to 8.0
6.5 to 13.0
10.0 to 20.0
4.0 to 13.0
6.5 to 20.0
4.0 to 20.0
Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
Sheet No.: D2-A04301EN
5
PC713VxNSZX Series
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
Fig.1 Forward Current vs. Ambient
Temperature
60
100
Diode power dissipation P (mW)
Forward current IF (mA)
50
40
30
20
10
0
-25
0
25
50
75
100
80
70
60
40
20
0
−25
125
0
Ambient temperature Ta (˚C)
Fig.4 Total Power Dissipation vs. Ambient
Temperature
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
200
250
Total power dissipation Ptot (mW)
Collector power dissipation PC (mW)
25
55
75
100
Ambient temperature Ta (˚C)
150
100
50
0
−25
0
25
50
75
100
200
170
150
100
50
0
−25
125
0
Ambient temperature Ta (˚C)
Fig.5 Peak Forward Current vs. Duty Ratio
25
50
75
100
Ambient temperature Ta (˚C)
Fig.6 Forward Current vs. Forward Voltage
10
Ta=75˚C
50˚C
Forward current IF (mA)
Peak forward current IFM (A)
Pulse width≤100µs
Ta=25˚C
1
0.1
25˚C
0˚C
100
−25˚C
10
1
0.01
10−3
10−2
10−1
1
0
Duty ratio
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward voltage VF (V)
Sheet No.: D2-A04301EN
6
PC713VxNSZX Series
Fig.8 Collector Current vs. Collectoremitter Voltage
Fig.7 Current Transfer Ratio vs. Forward
Current
30
200
25
160
Collector current IC (mA)
Current transfer ratio CTR (%)
180
140
120
RBE=∞
100
80
500kΩ
100kΩ
60
RBE=∞
Ta=25˚C
IF=30mA
VCE=5V
Ta=25˚C
40
PC (MAX.)
20mA
20
15
10mA
10
5mA
5
20
0
0
0
10
1
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
Collector-emitter saturation voltage VCE(sat) (V)
Relative current transfer ratio (%)
IF=5mA
VCE=5V
RBE=∞
100
50
25
50
75
100
6
7
8
9
IF=20mA
IC=1mA
0.12
RBE=∞
0.10
0.08
0.06
0.04
0.02
−25
0
20
40
60
80
100
Fig.12 Collector-base Dark Current vs.
Ambient Temperature
10−5
10−8
VCE=50V
RBE=∞
VCB=50V
RBE=∞
Collector dark current ICBO (A)
Collector dark current ICEO (A)
5
Ambient temperature Ta(˚C)
Fig.11 Collector Dark Current vs. Ambient
Temperature
10−7
10−8
10−9
10−10
10−11
−25
4
0.14
Ambient temperature Ta (˚C)
10−6
3
Fig.10 Collector - emitter Saturation Voltage
vs. Ambient Temperature
150
0
2
Collector-emitter voltage VCE (V)
Forward current IF (mA)
0
−25
1
10−9
10−10
10−11
0
25
50
75
100
0
Ambient temperature Ta (˚C)
25
50
75
100
125
Ambient temperature Ta (˚C)
Sheet No.: D2-A04301EN
7
PC713VxNSZX Series
Fig.13 Response Time vs. Load Resistance
VCE=2V
IC=2mA
RBE=∞
Ta=25˚C
100
Response time (µs)
Fig.14 Test Circuit for Response Time
Input
VCC
Output
Input
tr
RD
tf
10
RL
10%
Output
VCE
90%
td
ts
tr
tf
td
ts
1
Please refer to the conditions in Fig.13
0.1
0.1
1
10
Load resistance RL (kΩ)
Fig.16 Test Circuit for Frequency Response
Fig.15 Frequency Response
0
Voltage gain Av (dB)
VCC
VCE=5V
IC=2mA
RBE=∞
Ta=25˚C
RL=10kΩ
−10
1kΩ
RD
RL
Output
VCE
100Ω
Please refer to the conditions in Fig.15
−20
1
10
100
Frequency f (kHz)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A04301EN
8
PC713VxNSZX Series
■ Design Considerations
● Design guide
While operating at IF
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