PC714V0NSZX

PC714VxNSZX Series PC714VxNSZX Series DIP 6 pin General Purpose Photocoupler ■ Description ■ Agency approvals/Compliance PC714VxNSZX Series contains an IRED optically coupled to a phototransistor. It is packaged in a 6 pin DIP. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 80V(*) and CTR is 50% to 600% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC714V) 2. Approved by TÜV (VDE0884) (as an option) file No. R-9151576 (as model No. PC714V) 3. Package resin : UL flammability grade (94V-0) ■ Applications ■ Features 1. Home appliances 2. Programmable controllers 3. Personal computer peripherals 1. 6 pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO:80V(*)) 4. High isolation voltage between input and output (Viso(rms) : 5.0kV) (*) Up to Date code "P7" (July 2002) VCEO : 35V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A04101EN Date Nov. 28. 2003 © SHARP Corporation PC714VxNSZX Series ■ Internal Connection Diagram 1 1 6 2 5 2 3 4 3 4 5 6 Anode Cathode NC Emitter Collector NC ■ Outline Dimensions (Unit : mm) 2. Through-Hole (VDE0884 option) [ex. PC714VxYSZX] 1. Through-Hole [ex. PC714VxNSZX] 1.2±0.3 1.2±0.3 0.6±0.2 0.6 PC714V Anode mark 1 SHARP mark "S" 4 2 3 ±0.5 5 Date code 4 1 VDE0884 Identification mark 4 PC714V Anode mark 2 3 ±0.3 Date code 7.12 7.12 7.62±0.3 7.62±0.3 Rank mark 2.9±0.5 0.5TYP. 3.5±0.5 Rank mark 2.9±0.5 6 0.5TYP. 5 3.5±0.5 6 6.5±0.5 SHARP mark "S" 6.5±0.5 ±0.2 Epoxy resin 0.5±0.1 θ 2.54±0.25 θ θ : 0 to 13˚ 0.5±0.1 3.25±0.5 2.54±0.25 3.25±0.5 Epoxy resin θ θ θ : 0 to 13˚ Product mass : approx. 0.36g Sheet No.: D2-A04101EN 2 PC714VxNSZX Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Rank mark Refer to the Model Line-up Sheet No.: D2-A04101EN 3 PC714VxNSZX Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 *4 80 6 50 150 170 −25 to +100 −40 to +125 5 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1minute, f=60Hz *3 For 10s *4 Up to Date code "P7" (July 2002) VCEO : 35V. ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF VFM Peak forward voltage IR Reverse current Ct Terminal capacitance ICEO Collector dark current Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance fC Cut-off frequency tr Rise time Response time Fall time tf Conditions IF=20mA IFM=0.5A VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω −3dB VCE=2V, IC=2mA, RL=100Ω MIN. − − − − − *5 80 6 2.5 − 5×1010 − − − − TYP. 1.2 − − 30 − − − − 0.1 1×1011 0.6 80 4 3 MAX. 1.4 3.0 10 250 100 − − 30.0 0.2 − 1.0 − 18 18 (Ta=25˚C) Unit V V µA pF nA V V mA V Ω pF kHz µs µs *5 Up to Date code "P7" (July 2002) BVCEO≥35V. Sheet No.: D2-A04101EN 4 PC714VxNSZX Series ■ Model Line-up Through-Hole Sleeve Rank mark Package 50pcs/sleeve VDE0884 −−−−−− Approved PC714V0NSZX PC714V0YSZX with or with out A PC714V1NSZX PC714V1YSZX B PC714V2NSZX PC714V2YSZX Model No. PC714V3NSZX PC714V3YSZX C A or B PC714V5NSZX PC714V5YSZX B or C PC714V6NSZX PC714V6YSZX A, B or C PC714V8NSZX PC714V8YSZX Lead Form IC [mA] (IF=5mA, VCE=5V, Ta=25˚C) 2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 4.0 to 13.0 6.5 to 20.0 4.0 to 20.0 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A04101EN 5 PC714VxNSZX Series Fig.1 Forward Current vs. Ambient Temperature Fig.2 Diode Power Dissipation vs. Ambient Temperature 60 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 -25 0 25 50 75 100 80 70 60 40 20 0 −25 125 0 Ambient temperature Ta (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature Fig.3 Collector Power Dissipation vs. Ambient Temperature 250 Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 200 150 100 50 0 −25 0 25 50 75 100 200 170 150 100 50 0 −25 125 0 Ambient temperature Ta (˚C) 10 25 50 75 100 Ambient temperature Ta (˚C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio Ta=75˚C Pulse width≤100µs Ta=25˚C 50˚C Forward current IF (mA) Peak forward current IFM (A) 25 55 75 100 Ambient temperature Ta (˚C) 1 0.1 25˚C 0˚C 100 −25˚C 10 1 0.01 10−3 10−2 10−1 0 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF (V) Duty ratio Sheet No.: D2-A04101EN 6 PC714VxNSZX Series Fig.8 Collector Current vs. Collectoremitter Voltage Fig.7 Current Transfer Ratio vs. Forward Current 30 200 180 Ta=25˚C 25 160 Collector current IC (mA) Current transfer ratio CTR (%) IF=30mA VCE=5V Ta=25˚C 140 120 100 80 60 40 PC (MAX.) 20mA 20 15 10mA 10 5mA 5 20 0 0 0 10 1 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter saturation voltage VCE(sat) (V) Relative current transfer ratio (%) IF=5mA VCE=5V 100 50 25 50 3 4 5 6 7 8 9 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 150 0 2 Collector-emitter voltage VCE (V) Forward current IF (mA) 0 −25 1 75 100 0.14 IF=20mA IC=1mA 0.12 0.1 0.08 0.06 0.04 0.02 −25 0 Ambient temperature Ta (˚C) 20 40 60 80 100 Ambient temperature Ta(˚C) Fig.11 Collector Dark Current vs. Ambient Temperature Fig.12 Response Time vs. Load Resistance 10−5 VCE=50V 100 10−7 Response time (µs) Collector dark current ICEO (A) 10−6 10−8 10−9 VCE=2V IC=2mA Ta=25˚C tr tf 10 td ts 1 −10 10 10−11 −25 0.1 0 25 50 75 0.1 100 1 10 Load resistance RL (kΩ) Ambient temperature Ta (˚C) Sheet No.: D2-A04101EN 7 PC714VxNSZX Series Fig.13 Test Circuit for Response Time Fig.14 Frequency Response Input VCC VCE=5V IC=2mA Ta=25˚C 0 Output RD RL 10% Output VCE Voltage gain Av (dB) Input 90% td ts tr tf Please refer to the conditions in Fig.12 RL=10kΩ −10 1kΩ 100Ω −20 1 10 100 Frequency f (kHz) Fig.15 Test Circuit for Frequency Response VCC RD RL Output VCE Please refer to the conditions in Fig.14 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A04101EN 8 PC714VxNSZX Series ■ Design Considerations ● Design guide While operating at IF