PC81105NSZ

PC8110xNSZ Series PC8110xNSZ Series DIP 4pin High Speed under High Load Resistance Photocoupler ■ Description ■ Agency approvals/Compliance PC8110xNSZ Series contains an IRED optically coupled to a phototransistor built-in schottky barrier diode. It is packaged in a 4-pin DIP, and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. CTR is 50% to 400% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC8110) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Home appliances ■ Features 1. 4pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High speed response at turn-off time due to built-in schottky barrier diode (at saturation mode) 4. High isolation voltage between input and output (Viso(rms) : 5kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A03801EN Date Sep. 30. 2003 © SHARP Corporation PC8110xNSZ Series ■ Internal Connection Diagram Schottky barrier diode 1 1 4 2 3 3 4 5 Anode Cathode Emitter Collector ■ Outline Dimensions (Unit : mm) 2. SMT Gullwing Lead-Form [ex. PC8110xNIZ] Factory identification mark 4.58±0.5 ±0.1 θ : 0 to 13˚ 3 4.58±0.5 Epoxy resin 1.0+0.4 −0 3.5±0.5 0.35±0.25 0.26 1.0+0.4 −0 ±0.1 0.26 8 1 1 0 7.62±0.3 3.0±0.5 2.7±0.5 Epoxy resin 4 6.5±0.5 3.5±0.5 7.62±0.3 Date code 1 2 2.54±0.25 3 6.5±0.5 θ Rank mark ±0.1 8 1 1 0 2 0.5TYP. 4 1 4.58±0.5 Date code 0.6±0.2 1.2±0.3 0.6±0.2 1.2±0.3 Anode mark Factory identification mark 4.58±0.3 Rank mark Anode mark 2.54±0.25 1. Through-Hole [ex. PC8110xNSZ] 2.54±0.25 10.0+0 −0.5 0.5 θ Product mass : approx. 0.21g Sheet No.: D2-A03801EN 2 PC8110xNSZ Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actural status of the production. Rank mark Refer to the Model Line-up table Sheet No.: D2-A03801EN 3 PC8110xNSZ Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation *2 Isolation voltage Viso (rms) Topr Operating temperature Tstg Storage temperature *3 Soldering temperature Tsol Rating 50 1.0 6 70 70 0.1 30 150 200 5.0 −30 to +100 −55 to +125 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW kV ˚C ˚C ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Output Transfer characteristics Response time Input Parameter Symbol Forward voltage VF Peak forward voltage VFM IR Reverse Current Ct Terminal capacitance ICEO Collector dark current *4 Collector-emitter breakdown voltage BVCEO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Not saturated Fall time tf Turn-on time ton Saturated 1 Storage time ts Turn-off time toff Turn-on time ton Saturated 2 Storage time ts Turn-off time toff Conditions IF=20mA IFM=0.5A VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100Ω VCC=5V, IC=20mA, RL=10kΩ VCC=5V, IC=20mA, RL=100kΩ MIN. − − − − − 70 2.5 − 5×1010 − − − − − − − − − TYP. 1.2 − − 30 − − − 0.15 1011 0.6 3 2 2 9 23 3 10 27 MAX. 1.4 3.0 10 250 100 − 20 0.35 − 1.0 20 10 13 50 90 13 50 100 (Ta=25˚C) Unit V V µA pF nA V mA V Ω pF µs *4 The collector-emitter voltage has negative resistance characteristics since this device has built-in base-emitter resistor. Therefore, please be careful not to provide the voltage that goes beyond absolute maximum ratings. Sheet No.: D2-A03801EN 4 PC8110xNSZ Series ■ Model Line-up Lead Form Through-Hole SMT Gullwing Package 100pcs/sleeve 100pcs/sleeve 2000pcs/reel PC81100NSZ PC81100NIZ PC81100NIP PC81101NSZ PC81101NIZ PC81101NIP PC81102NSZ PC81102NIZ PC81102NIP Model No. PC81103NSZ PC81103NIZ PC81103NIP PC81105NSZ PC81105NIZ PC81105NIP PC81106NSZ PC81106NIZ PC81106NIP PC81108NSZ PC81108NIZ PC81108NIP Rank mark IC [mA] (IF=5mA, VCE=5V, Ta=25˚C) with or without A B C A or B B or C A, B or C 2.5 to 20.0 3.0 to 6.0 5.0 to 10.0 7.5 to 15.0 3.0 to 10.0 5.0 to 15.0 3.0 to 15.0 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A03801EN 5 PC8110xNSZ Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 100 80 70 60 40 20 0 −30 125 0 Fig.3 Collector Power Dissipation vs. Ambient Temperature 50 55 75 100 125 Fig.4 Total Power Dissipation vs. Ambient Temperature 250 Total Power dissipation Ptot (mW) 250 Collector power dissipation PC (mW) 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 200 150 100 50 0 −30 0 25 50 75 100 200 150 100 50 0 −30 125 0 25 50 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio Fig.6 Forward Current vs. Forward Voltage 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 Ta=100˚C Ta=25˚C Ta=75˚C Ta=0˚C Ta=50˚C Ta=−25˚C 10 20 10 5 10 −3 2 5 10 −2 2 −1 5 10 1 2 5 1 0 Duty ratio 1.0 2.0 3.0 Forward voltage VF (V) 6 Sheet No.: D2-A03801EN PC8110xNSZ Series Fig.7 Current Transfer Ratio vs. Forward Current Fig.8 Collector Current vs. Collector-emitter Voltage 30 200 VCE=5V Ta=25˚C PC (MAX.) 25 160 Collector current IC (mA) Current transfer ratio CTR (%) 180 140 120 100 80 60 40 IF=30mA 20 IF=20mA 15 IF=10mA 10 IF=5mA 5 IF=3mA 20 0 0 1 10 0 100 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature VCE=5V IF=5mA 120 100 80 60 40 20 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 6 8 10 0.20 IF=20mA IC=1mA 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.12 Response Time vs. Load Resistance (saturation region) Fig.11 Collector Dark Current vs. Ambient Temperature 100 VCE=50V 10−6 toff 10−7 Response time (µs) Collector dark current ICEO (A) 4 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 140 2 Collector-emitter voltage VCE (V) Forward current IF (mA) 10−5 Ta=25˚C 10−8 10−9 ts 10 ton 1 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 VCC=5V IF=20mA Ta=25˚C 0.1 1 10 100 Load resistance RL (kΩ) Ambient temperature Ta (˚C) Sheet No.: D2-A03801EN 7 PC8110xNSZ Series Fig.14 Test Circuit for Response Time Fig.13 Response Time vs. Load Resistance (active region) 100 VCE=2V IC=2mA Ta=25˚C VCC tr RL Response time (µs) RD tf 10 Output Input Output Input 10% VCE td ts ts tf td tr 1 90% Please refer to the conditions in Fig.12 and Fig.13 0.1 0.1 1 10 Load resistance RL (kΩ) Fig.15 Frequency Response Fig.16 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) 5 Voltage gain AV (dB) 0 RL=10kΩ −5 1kΩ −10 100Ω −15 −20 −25 0.1 VCE=2V IC=2mA Ta=25˚C 1 10 100 5 IC=7mA 4 IC=3mA IC=1mA 3 IC=0.5mA 2 1 0 0 1 000 Ta=25˚C IC=5mA 5 10 15 Forward current IF (mA) Frequency response f (kHz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A03801EN 8 PC8110xNSZ Series ■ Design Considerations ● Design guide While operating at IF