PC81510NSZ

PC81510NSZ PC81510NSZ DIP 4pin Darlington Phototransistor Output, Low Input Current Photocoupler ■ Description ■ Agency approvals/Compliance PC81510NSZ contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP. Input-output isolation voltage(rms) is 5.0kV. CTR is MIN. 600% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC8151) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Home appliances 2. Programmable controllers ■ Features 1. 4pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input drive current (IF=0.5mA) 4. Darlington phototransistor output (CTR : MIN. 600% at IF=0.5mA, VCE=2V) 5. High isolation voltage between input and output (Viso(rms) : 5.0kV) Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A03901EN Date Sep. 30. 2003 © SHARP Corporation PC81510NSZ ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 ■ Outline Dimensions (Unit : mm) Factory identification mark 0.6±0.2 4 8 1 5 1 3 2 6.5±0.5 4.58±0.5 Epoxy resin 0.26±0.1 θ 3.0±0.5 2.7±0.5 3.5±0.5 7.62±0.3 0.5TYP. 1 4.58±0.5 Date code 2.54±0.25 1.2±0.3 Anode mark Anode Cathode Emitter Collector 0.5±0.1 θ θ : 0 to 13˚ Product mass : approx. 0.25g Sheet No.: D2-A03901EN 2 PC81510NSZ Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Sheet No.: D2-A03901EN 3 PC81510NSZ ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation *2 Isolation voltage Viso (rms) Topr Operating temperature Tstg Storage temperature *3 Soldering temperature Tsol Rating 10 200 6 15 35 6 80 150 170 5.0 −30 to +100 −55 to +125 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW kV ˚C ˚C ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Conditions IF=5mA VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=2V IF=1mA, IC=2mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=10mA, RL=100Ω MIN. − − − − 35 6 3 − 5×1010 − − − TYP. 1.2 − 30 − − − 14 − 1×1011 0.6 60 53 MAX. 1.4 10 250 1 000 − − 60 1.0 − 1.0 300 250 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A03901EN 4 PC81510NSZ Fig.2 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature 10 5 0 −30 0 25 50 75 100 15 10 5 0 −30 125 0 200 150 100 50 25 50 75 75 100 125 Fig.4 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) Fig.3 Collector Power Dissipation vs. Ambient Temperature 0 50 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 0 −30 25 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Forward Current vs. Forward Voltage Fig.5 Peak Forward Current vs. Duty Ratio 100 Pulse width≤100µs Ta=25˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) 2 000 500 200 100 50 Ta=100˚C 10 Ta=75˚C 25˚C 0˚C 50˚C −25˚C 1 20 10 −3 5 10 2 −2 5 10 2 −1 5 10 0.1 2 5 1 0 Duty ratio 0.5 1.0 1.5 2.0 Forward voltage VF (V) Sheet No.: D2-A03901EN 5 PC81510NSZ Fig.8 Collector Current vs. Forward Current Fig.7 Current Transfer Ratio vs. Forward Current 4 000 3 500 3 000 Collector current IC (mA) Current transfer ratio CTR (%) 100 VCE=2V Ta=25˚C 2 500 2 000 1 500 VCE=2V Ta=25˚C 10 1 1 000 500 0 0.1 1 0.1 0.1 10 1 Forward current IF (mA) Forward current IF (mA) Fig.10 Collector Current vs. Collector-emitter Voltage(2) Fig.9 Collector Current vs. Collector-emitter Voltage(1) 100 120 Pc(MAX) Collector current IC (mA) Collector current IC (mA) 80 IF=3.0mA IF=2.0mA 60 40 IF=1.0mA IF=1.0mA IF=0.7mA IF=0.5mA 0 0 2 1 3 4 0 0 5 0.5 1 1.5 2 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Fig.11 Relative Current Transfer Ratio vs. Ambient Temperature Fig.12 Collector - emitter Saturation Voltage vs. Ambient Temperature 1.2 IF=0.5mA VCE=2V Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) IF=0.5mA 10 IF=0.7mA 20 120 PC(MAX) IF=3.0mA IF=2.0mA IF=5.0mA 140 Ta=25˚C Ta=25˚C IF=7.0mA 100 10 100 80 60 40 20 IF=1mA IC=2mA 1 0.8 0.6 0.4 0.2 0 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A03901EN 6 PC81510NSZ Fig.13 Collector Dark Current vs. Ambient Temperature 10−4 Fig.14 Response Time vs. Load Resistance 1 000 VCE=10V Collector dark current ICEO (A) 10−5 VCE=2V IC=10mA Ta=25˚C tr −6 Response time (µs) 10 10−7 10−8 100 tf ts td 10 10−9 10−10 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 1 0.01 Ambient temperature Ta (˚C) 0.1 1 Load resistance RL (kΩ) 10 Fig.15 Test Circuit for Response Time VCC Input Input RD RL Output Output 10% VCE 90% ts td tr tf Please refer to the conditions in Fig.14. Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A03901EN 7 PC81510NSZ ■ Design Considerations ● Design guide While operating at IF