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PC817XI1

PC817XI1

  • 厂商:

    SHARP(夏普)

  • 封装:

    OC-4P_6.5X4.58MM_SM

  • 描述:

    OPTOISOLATOR 5KV TRANS 4SMD

  • 数据手册
  • 价格&库存
PC817XI1 数据手册
PC817X Series DIP 4pin General Purpose Photocoupler PC817X Series ∗ 4-channel package type is also available. (model No. PC847X Series) ■ Description ■ Agency approvals/Compliance PC817X Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. Collector-emitter voltage is 80V(*) and CTR is 50% to 600% at input current of 5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC817) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. I/O isolation for MCUs (Micro Controller Units) 2. Noise suppression in switching circuits 3. Signal transmission between circuits of different potentials and impedances ■ Features 1. 4pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO:80V(*)) 4. Current transfer ratio (CTR : MIN. 50% at IF=5 mA, VCE=5V) 5. Several CTR ranks available 6. High isolation voltage between input and output (Viso(rms) : 5.0 kV) (*) Up to Date code "P7" (July 2002) VCEO : 35V. From the production Date code "J5" (May 1997) to "P7" (July 2002), however the products were screened by BVCEO≥70V. Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A03101EN Date Sep. 30. 2003 © SHARP Corporation PC817X Series ■ Internal Connection Diagram Anode Cathode Emitter Collector 1 1 4 2 3 2 3 4 ■ Outline Dimensions (Unit : mm) PC817 2 Date code 4 1 PC817 2 2.54±0.25 3 Factory identification mark 6.5±0.5 3 6.5±0.5 7.62±0.3 0.26±0.1 ±0.1 0.26 0.5TYP. 3.5±0.5 3.0±0.5 2.7±0.5 Epoxy resin 4.58±0.5 0.35±0.25 4.58±0.5 7.62±0.3 Epoxy resin 1.0+0.4 −0 3.5±0.5 4.58±0.5 4 0.6±0.2 1.2±0.3 0.6±0.2 Date code 1 Rank mark Anode mark Factory identification mark 4.58±0.5 Rank mark Anode mark 1.2±0.3 2. SMT Gullwing Lead-Form [ex. PC817XI] 2.54±0.25 1. Through-Hole [ex. PC817X] 2.54±0.25 1.0+0.4 −0 10.0+0 −0.5 ±0.1 0.5 θ 3. Wide Through-Hole Lead-Form [ex. PC817XF] Rank mark 4. Wide SMT Gullwing Lead-Form [ex. PC817XFP] Rank mark Factory identification mark 1 4 0.6±0.2 1.2±0.3 Date code Date code 1 4 2.54 4.58±0.5 7.62±0.3 0.26 4.58±0.5 3.5±0.5 2.7 MIN. 6.5±0.5 3 ±0.1 7.62±0.3 PC817 ±0.25 2 0.25±0.25 6.5±0.5 3 1.0±0.1 PC817 2.54±0.25 1.0±0.1 2 4.58 ±0.5 0.6±0.2 1.2±0.3 Factory identification mark Anode mark Anode mark 3.5±0.5 θ : 0 to 13˚ 4.58±0.5 θ Epoxy resin ±0.25 0.75 Epoxy resin ±0.5 10.16 0.5±0.1 ±0.25 0.75 12.0MAX 0.26±0.1 0.5±0.1 10.16±0.5 Product mass : approx. 0.21g Sheet No.: D2-A03101EN 2 PC817X Series Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D Mark P R S T U V W X A B C ·· · repeats in a 20 year cycle Factory identification mark Factory identification Mark Country of origin no mark Japan Indonesia Philippines China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actural status of the production. Rank mark Refer to the Model Line-up table Sheet No.: D2-A03101EN 3 PC817X Series ■ Absolute Maximum Ratings Output Input Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Total power dissipation Ptot *2 Isolation voltage Viso (rms) Operating temperature Topr Storage temperature Tstg *3 Soldering temperature Tsol *1 *2 *3 *4 Rating 50 1 6 70 *4 80 6 50 150 200 5.0 −30 to +100 −55 to +125 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW kV ˚C ˚C ˚C Pulse width≤100µs, Duty ratio : 0.001 40 to 60%RH, AC for 1minute, f=60Hz For 10s Up to Date code "P7" (July 2002) VCEO : 35V. Transfer characteristics Output Input ■ Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency Rise time Response time Fall time Symbol VF VFM IR Ct ICEO BVCEO BVECO IC VCE (sat) RISO Cf fc tr tf Conditions IF=20mA IFM=0.5A VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω, −3dB VCE=2V, IC=2mA, RL=100Ω MIN. − − − − − *5 80 6 2.5 − 5×1010 − − − − TYP. 1.2 − − 30 − − − − 0.1 1×1011 0.6 80 4 3 MAX. 1.4 3.0 10 250 100 − − 30.0 0.2 − 1.0 − 18 18 (Ta=25˚C) Unit V V µA pF nA V V mA V Ω pF kHz µs µs *5 From the production Date code "J5" (May 1997) to "P7" (July 2002), however the products were screened by BVCEO≥70V. Sheet No.: D2-A03101EN 4 PC817X Series ■ Model Line-up Lead Form Package Model No. Through-Hole Wide Through-Hole Sleeve 100pcs/sleeve PC817X PC817X1 PC817X2 PC817X3 PC817X4 PC817X5 PC817X6 PC817X7 PC817X8 PC817X9 PC817X0 PC817XF PC817XF1 PC817XF2 PC817XF3 PC817XF4 PC817XF5 PC817XF6 PC817XF7 PC817XF8 PC817XF9 PC817XF0 SMT Gullwing PC817XI PC817XI1 PC817XI2 PC817XI3 PC817XI4 PC817XI5 PC817XI6 PC817XI7 PC817XI8 PC817XI9 PC817XI0 Wide SMT Gullwing Taping 2 000pcs/reel PC817XP PC817XP1 PC817XP2 PC817XP3 PC817XP4 PC817XP5 PC817XP6 PC817XP7 PC817XP8 PC817XP9 PC817XP0 PC817XFP − − − − − − − − − − Rank mark IC [mA] (IF=5mA, VCE=5V, Ta=25˚C) with or without A B C D A or B B or C C or D A, B or C B, C or D A, B, C or D 2.5 to 30.0 4.0 to 8.0 6.5 to 13.0 10.0 to 20.0 15.0 to 30.0 4.0 to 13.0 6.5 to 20.0 10.0 to 30.0 4.0 to 20.0 6.5 to 30.0 4.0 to 30.0 Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. Sheet No.: D2-A03101EN 5 PC817X Series Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 50 40 30 20 10 0 −30 0 25 50 55 75 100 80 70 60 40 20 0 −30 125 0 Fig.3 Collector Power Dissipation vs. Ambient Temperature Total Power dissipation Ptot (mW) Collector power dissipation PC (mW) 75 100 125 250 200 150 100 50 0 −30 0 25 50 75 100 200 150 100 50 0 −30 125 Fig.5 Peak Forward Current vs. Duty Ratio 25 50 75 100 125 Fig.6 Current Transfer Ratio vs. Forward Current 10 000 800 Pulse width≤100µs Ta=25˚C 5 000 0 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) VCE=5V Ta=25˚C 700 2 000 Current transfer ratio CTR (%) Peak forward current IFM (mA) 50 55 Fig.4 Total Power Dissipation vs. Ambient Temperature 250 1 000 500 200 100 50 20 10 5 25 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 600 500 400 300 200 100 5 10−3 2 5 10−2 2 5 10−1 2 5 0 0.1 1 Duty ratio 1 10 Forward current IF (mA) Sheet No.: D2-A03101EN 6 PC817X Series Fig.7 Forward Current vs. Forward Voltage 30 500 Ta=75˚C IF=30mA 50˚C 100 25˚C 0˚C 50 −25˚C 25 Collector current IC (mA) 200 Forward current IF (mA) Fig.8 Collector Current vs. Collector-emitter Voltage 20 10 5 Ta=25˚C 20mA PC (MAX.) 20 15 10mA 10 5mA 2 5 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 1 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) IF=5mA,VCE=5V 100% 6 50% −20 0 20 40 60 7 8 9 80 IF=20mA IC=1mA 0.12 0.10 0.08 0.06 0.04 0.02 0 −40 100 Ambient temperature Ta (˚C) −20 0 20 40 60 80 100 Ambient temperature Ta (˚C) Fig.11 Collector Dark Current vs. Ambient Temperature Fig.12 Collector-emitter Saturation Voltage vs. Forward Current 6 Collector-emitter saturation voltage VCE (sat) (V) Collector dark current ICEO (A) 5 0.14 IF=1mA,VCE=5V VCE=50V 10−6 5 10−7 5 10−8 5 10−9 5 10−10 5 10−11 −30 4 Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 150% 10−5 5 3 Collector-emitter voltage VCE (V) Forward voltage VF (V) 0% −40 2 Ta=25˚C 5 IC=0.5mA 1mA 4 3mA 5mA 3 7mA 2 1 0 0 20 40 60 80 Ambient temperature Ta (˚C) 0 100 5 10 15 Forward current IF (mA) Sheet No.: D2-A03101EN 7 PC817X Series Fig.13 Response Time vs. Load Resistance Fig.14 Test Circuit for Response Time 500 Response time (µs) VCE=2V 200 IC=2mA Ta=25˚C 100 Input VCC 50 tr 20 tf Output Input RD RL 10% Output 90% VCE 10 ts td 5 tr tf td 2 1 ts Please refer to the conditions in Fig.13. 0.5 0.2 0.1 0.01 50 0.1 1 10 Load resistance RL (kΩ) Fig.15 Frequency Response Fig.16 Test Circuit for Frequency Response 0 Voltage gain Av (dB) VCC VCE=5V IC=2mA Ta=25˚C RD RL Output VCE 100Ω 1kΩ −10 Please refer to the conditions in Fig.15. RL=10kΩ −20 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A03101EN 8 PC817X Series ■ Design Considerations ● Design guide While operating at IF
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