PC852X Series/PC853X Series
PC852X Series
PC853X Series
DIP 4pin Darlington Phototransistor Ouput,
High Collector-emitter Voltage
Photocoupler
■ Description
■ Agency approvals/Compliance
PC852X Series/PC853X Series contains an IRED
optically coupled to a phototransistor.
It is packaged in a 4-pin DIP, available in SMT gullwing lead-form option.
Input-output isolation voltage(rms) is 5.0kV.
Collector-emitter voltage is 350V and CTR is MIN.
1 000% at input current of 1mA.
1. Recognized by UL1577, file No. E64380 (as model
No. PC852/PC853)
2. Package resin : UL flammability grade (94V-0)
■ Applications
1. Telephone line interface/isolation
2. Interface to power supply circuit
3. Controller for SSRs, DC motors
■ Features
1. 4pin DIP package
2. Double transfer mold package (Ideal for Flow Soldering)
3. High collector-emitter voltage (VCEO : 350V)
4. Durlington phototransistor output (CTR : MIN. 1 000%
at IF=1mA, VCE=2V)
5. Large collector power disspation : PC853X
(PC : 300mW)
6. High isolation voltage between input and output
(Viso(rms) : 5kV)
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A04003EN
Date Mar. 26. 2004
© SHARP Corporation
PC852X Series/PC853X Series
■ Internal Connection Diagram
1
1
4
2
3
3
4
5
Anode
Cathode
Emitter
Collector
■ Outline Dimensions
(Unit : mm)
● PC852X Series
2. Through-Hole (VDE 0884 option) [ex. PC852XY]
Anode mark
4.58±0.5
Date code
PC852
2
6.5±0.5
4
1
PC852
2
2.54±0.25
3
Date code
4
3
2.54±0.25
4
1
Factory identification mark
0.6±0.2
1.2±0.3
Factory identification mark
0.6±0.2
1.2±0.3
Anode mark
4.58±0.5
1. Through-Hole [ex. PC852X]
6.5±0.5
SHARP mark "S"
VDE 0884 identification mark
±0.3
0.26±0.1
3.5±0.5
0.5TYP.
0.5±0.1
0.26±0.1
θ
θ
θ : 0 to 13˚
6.5±0.5
3
0.6±0.2
1.2±0.3
Factory identification mark
Date code
4
1
2
PC852
4.58±0.3
PC852
4.58±0.3
4
3
4
2.54±0.25
0.6±0.2
1.2±0.3
Anode mark
Date code
2
θ
4. SMT Gullwing Lead-Form (VDE 0884 option)
[ex. PC852XPY]
Factory identification mark
1
0.5±0.1
θ : 0 to 13˚
3. SMT Gullwing Lead-Form [ex. PC852XI]
Anode mark
3.0±0.5
2.7
Epoxy resin
6.5±0.5
SHARP mark "S"
4.58±0.5
7.62±0.3
2.54±0.25
θ
±0.5
2.7
3.0±0.5
±0.5
Epoxy resin
4.58±0.5
7.62
VDE 0884 identification mark
4.58±0.5
±0.3
10.0+0
−0.5
2.54±0.25
1.0+0.4
−0
0.35
1.0+0.4
−0
3.5±0.5
±0.1
3.5±0.5
0.26
Epoxy resin
±0.25
7.62
0.35±0.25
0.26
±0.1
1.0+0.4
−0
0.5TYP.
4.58±0.5
3.5±0.5
7.62±0.3
Epoxy resin
10.0+0
−0.5
1.0+0.4
−0
2.54±0.25
Sheet No.: D2-A04003EN
2
PC852X Series/PC853X Series
(Unit : mm)
● PC853X Series
2. SMT Gullwing Lead-Form [ex. PC853XI]
4.58±0.5
2.7
θ
3
4.58±0.5
1.0+0.4
−0
Epoxy resin
10.0+0
−0.5
0.5±0.1
3.5±0.5
0.26±0.1
3.0±0.5
±0.5
0.26±0.1
PC853
7.62±0.3
3.5±0.5
7.62±0.3
Epoxy resin
4
6.5±0.5
0.5TYP.
6.5±0.5
Date code
1
2
2.54±0.25
3
Factory identification mark
0.35±0.25
PC853
2
4.58±0.5
4
1
0.6±0.2
1.2±0.3
Anode mark
Date code
4.58±0.3
Factory identification mark
0.6±0.2
1.2±0.3
Anode mark
2.54±0.25
1. Through-Hole [ex. PC853X]
1.0+0.4
−0
2.54±0.25
θ
θ : 0 to 13˚
Product mass : approx. 0.21g
Sheet No.: D2-A04003EN
3
PC852X Series/PC853X Series
Date code (2 digit)
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
··
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
Mark
P
R
S
T
U
V
W
X
A
B
C
··
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
Country of origin
no mark
Japan
Indonesia
Philippines
China
* This factory marking is for identification purpose only.
Please contact the local SHARP sales representative to see the actural status of the
production.
Sheet No.: D2-A04003EN
4
PC852X Series/PC853X Series
■ Absolute Maximum Ratings
(Ta=25˚C)
Output
Input
Rating
Parameter
Symbol
PC852X PC853X
Forward current
50
IF
*1
1
Peak forward current
IFM
Reverse voltage
VR
6
70
Power dissipation
P
Collector-emitter voltage VCEO
350
Emitter-collector voltage VECO
0.1
IC
Collector current
150
Collector power dissipation
PC
150
300
Ptot
Total power dissipation
200
320
*2
Isolation voltage
Viso (rms)
5.0
Topr
Operating temperature
−30 to +100
Tstg
Storage temperature
−55 to +125
*3
Soldering temperature
Tsol
260
Unit
mA
A
V
mW
V
V
mA
mW
mW
kV
˚C
˚C
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Symbol
Forward voltage
VF
IR
Reverse voltage
Terminal capacitance
Ct
Collector dark current
ICEO
Collector-emitter breakdown voltage BVCEO
Collector current
IC
Collector-emitter saturation voltage VCE (sat)
Isolation resistance
RISO
Floating capacitance
Cf
Cut-off frequency
fC
Rise time
tr
Response time
Fall time
tf
Conditions
IF=10mA
VR=4V
V=0, f=1kHz
VCE=200V, IF=0
IC=0.1mA, IF=0
IF=1mA, VCE=2V
IF=20mA, IC=100mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=20mA, RL=100Ω, −3dB
VCE=2V, IC=20mA, RL=100Ω
MIN.
−
−
−
−
350
10
−
5×1010
−
1
−
−
TYP.
1.2
−
30
−
−
40
−
1×1011
0.6
7
100
20
MAX.
1.4
10
250
200
−
150
1.2
−
1.0
−
300
100
(Ta=25˚C)
Unit
V
µA
pF
nA
V
mA
V
Ω
pF
kHz
µs
µs
Sheet No.: D2-A04003EN
5
PC852X Series/PC853X Series
■ Model Line-up
● PC852X Series
Lead Form
Package
VDE0884
Model No.
Through-Hole
SMT Gullwing
Sleeve
Taping
100pcs/sleeve
2 000pcs/reel
Approved
Approved
PC852X
PC852XY PC852XI PC852XP PC852XPY
● PC853X Series
Lead Form Through-Hole
SMT Gullwing
Sleeve
Taping
Package
2 000pcs/reel
100pcs/sleeve
VDE0884
Model No.
PC853X
PC853XI PC853XP
Please contact a local SHARP sales representative to inquire about production status and Lead-Free options.
Sheet No.: D2-A04003EN
6
PC852X Series/PC853X Series
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Diode Power Dissipation vs.
Ambient Temperature
60
100
Diode power dissipation P (mW)
Forward current IF (mA)
50
40
30
20
10
0
−30
0
25
50
75
100
80
70
60
40
20
0
−30
125
0
25
Ambient temperature Ta (˚C)
Fig.3-a Collector Power Dissipation vs.
Ambient Temperature (PC852X)
Collector power dissipation PC (mW)
Collector power dissipation PC (mW)
100
50
25
50
75
100
125
100
(PC853X)
350
150
0
75
Fig.3-b Collector Power Dissipation vs.
Ambient Temperature
200
0
−30
50 55
Ambient temperature Ta (˚C)
300
250
200
150
100
50
0
−30
125
Ambient temperature Ta (˚C)
0
25
50
75
100
125
Ambient temperature Ta (˚C)
Fig.4 Total Power Dissipation vs. Ambient
Temperature
Fig.5 Peak Forward Current vs. Duty Ratio
10 000
Pulse width≤100µs
Ta=25˚C
400
Peak forward current IFM (mA)
Total Power dissipation Ptot (mW)
5 000
PC853X
320
300
200
PC852X
100
2 000
1 000
500
200
100
50
20
10
0
−30
5
0
25
50
75
100
5 10−3 2
5 10−2 2
5 10−1 2
5
1
Duty ratio
Ambient Temperature Ta (˚C)
Sheet No.: D2-A04003EN
7
PC852X Series/PC853X Series
Fig.6 Forward Current vs. Forward Voltage
5 000
500
VCE=2V
Ta=25˚C
50˚C
100
25˚C
0˚C
50
−25˚C
Current transfer ratio CTR (%)
Ta=75˚C
200
Forward current IF (mA)
Fig.7-a Current Transfer Ratio vs. Forward
Current
(PC852X)
20
10
5
2
4 000
3 000
2 000
1 000
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.1
3.5
0.2
0.5
1
2
5
Forward current IF (mA)
Forward voltage VF (V)
Fig.7-b Current Transfer Ratio vs. Forward
Current
(PC853X)
Fig.8-a Collector Current vs. Collectoremitter Voltage
(PC852X)
5 000
200
Ta=25˚C
4 000
Collector current IC (mA)
Current transfer ratio CTR (%)
VCE=2V
Ta=25˚C
3 000
2 000
I F =10mA
5mA
3mA
2.5mA
100
2mA
1.5mA
PC (MAX.)
1mA
1 000
0
0.1
0.5mA
0
0.2
0.5
1
2
5
10
0
Forward current IF (mA)
1
2
3
4
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
150
200
IF=1mA
VCE=2V
Ta=25˚C
Relative current transfer ratio (%)
IF=10mA
5mA
3mA
2.5mA
2mA
100
PC (MAX.)
1.5mA
1mA
0.5mA
0
0
1
2
3
5
Collector-emitter voltage VCE (V)
Fig.8-b Collector Current vs. Collectoremitter Voltage
(PC853X)
Collector current IC (mA)
10
4
100
50
0
−30
5
0
20
40
60
80
100
Ambient Temperature Ta (˚C)
Collector-emitter voltage VCE (V)
Sheet No.: D2-A04003EN
8
PC852X Series/PC853X Series
Fig.10 Collector - emitter Saturation Voltage
vs. Ambient Temperature
Fig.11 Collector Dark Current vs. Ambient
Temperature
−5
10
VCE=200V
10−6
1.0
Collector dark current ICEO (A)
Collector-emitter saturation voltage VCE (sat) (V)
1.2
0.8
0.6
0.4
10−7
10−8
10−9
10−10
0.2
IF=20mA
IC=100mA
0
−30
0
20
40
60
80
10−11
−30
100
500
VCE=2V
IC=20mA
Ta=25˚C
60
80
100
Fig.13 Test Circuit for Response Time
tr
Input
VCC
Output
200
Response time (µs)
40
Ambient temperature Ta (˚C)
Fig.12 Response Time vs. Load Resistance
1 000
20
0
Ambient temperature Ta (˚C)
100
Input
tf
RL
RD
10%
Output
90%
50
VCE
ts
td
tr
td
ts
20
10
tf
Please refer to the conditions in Fig.12.
5
2
1
0.01
0.1
1
10
Load resistance RL (kΩ)
Fig.14 Frequency Response
Fig.15 Collector-emitter Saturation Voltage
vs. Forward Current
Collector-emitter saturation voltage VCE (sat) (V)
5
VCE=2V
IC=20mA
Ta=25˚C
0
Voltage gain Av (dB)
−5
RL=1kΩ
−10
100Ω
10Ω
−15
−20
−25
Ta=25˚C
IC=5mA
10mA
4
30mA
50mA
3
70mA
100mA
2
1
0
0.1
1
10
100
0
1 000
1
2
3
4
5
Forward current IF (mA)
Frequency f (kHz)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A04003EN
9
PC852X Series/PC853X Series
■ Design Considerations
● Design guide
While operating at IF
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