PC915

PC915 PC915 s Features 1. Wide band linear output type ( Frequency band width : TYP. 10Hz to 8MHz ) 2. Fluctuation free stable output ( Output fluctuation : TYP. ± 5% at within operating temperature 50 000hr ) 3. High isolation voltage ( Viso : 5 000V rms ) 4. Standard dual-in-line package 5. Recognized by UL, file No, E64380 Wide Band Linear Output Type OPIC Photocoupler s Outline Dimensions Internal connection diagram 8 1.2 ± 0.3 8 6.5 ± 0.5 7 PC915 AGC 6 0.85 ± 0.2 5 AMP 7 6 5 1 2 3 4 1 Anode mark 2 3 4 AGC : Automatic Gain Control 7.62 ± 0.3 s Applications 1. Video signal insulation in TV 2. Insulation amplifier in measuring instrument and FA equipment 0.5TYP. 3.5 ± 0.5 9.66 ± 0.5 3.3 ± 0.5 3.0 ± 0.5 0.26 ± 0.1 θ θ = 0 to 13 ˚ θ 0.5 ± 0.1 2.54 ± 0.25 1 2 3 4 NC Anode Cathode NC 5 6 7 8 VO V CC GND C * “ OPIC ” ( Optical IC ) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and signalprocessing circuit integrated onto a single chip. s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Supply voltage Output power dissipation Output current *1 Isolation voltage Operating temperature Storage temperature *2 Soldering temperature Symbol IF VR P V CC PO IO V iso T opr T stg T sol ( Ta = 25˚C ) Rating 25 6 45 - 0.5 to + 13 250 - 1.0 to + 0.5 5 000 - 25 to + 85 - 55 to + 125 260 Unit mA V mW V mW mA V rms ˚C ˚C ˚C Input Output *1 40 to 60% RH, AC for 1 minute *2 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PC915 s Electro-optical Characteristics Parameter Forward voltage Reverse voltage Terminal capacitance Supply current DC output voltage Output noise voltage AC output voltage AC output *1 Temperature characteristics voltage fluctuation *2 Forward current characteristics High frequency Transfer *3 ff Cut-o charac- frequency Low frequency teristics Differential gain Differential phase Isolation resistance Floating capacitance Symbol VF IR Ct I CC V ODC V ONO V OAC ∆ V OAC-1 ∆ V OAC-2 f CH f CL DG DP R ISO Cf Conditions I F = 10mA V R = 5V V = 0, f = 1MHz I F = 10mA I F = 10mA I F = 10mA, Band width = 100Hz to 4.2MHz R E = 230 Ω R E = 230 Ω , Ta = 10 to 70˚C R E = 230 to 460 Ω R E = 230 Ω R E = 230 Ω ( Unless otherwise spcified, Ta = 25˚C ) MIN. 4 0.8 6 TYP. 1.6 60 9 6 4 1.0 ±3 ±3 8 10 +3 -3 MAX. 1.8 10 250 16 8 1.2 20 5 Unit V µA pF mA V mV rms V P-P % % MHz Hz % ˚ Ω pF Fig. 1 1 1 1 2 2 2 2 2 3 3 - Input Output DC500V, 40 to 60% RH V = 0, f = 1MHz 5 x 1010 1 x 1011 0.6 *1 Fluctuation ratio of VOAC at Ta = - 10 to 70˚C on the basis of VOAC at Ta = 25˚C *2 Fluctuation ratio of VOAC at RE = 230 to 460Ω on the basis of VOAC at R E = 230 Ω *3 Frequency of VIN when V OAC falls by 3dB on the basis of VOAC when frequency of VIN in Fig. 2 is 100kHz. s Recommended Operating Conditions Input Parameter Forward bias current Supply voltage AC output voltage Output current C terminal capacitance Symbol I FB V CC V OAC IO CC MIN. 8 8 - 0.6 10 MAX. 15 13 4 + 0.2 Unit mA V V P-P mA µF Output PC915 s Test Circuit Fig.1 PC915 1 NC VCC 6 Anode 2 IF V 3 Cathode AGC C 8 + 7 NC GND 10 µF AMP VO 5 + 10 µ F V A 9V 4 Fig. 2 9V 470 Ω 100 µF Tr1 RE 1 + 100 µ F Tr2 Anode 2 AMP VO 5 + 3 AGC 8 + 7 NC GND 10 µF 10µ F CRT NC PC915 VCC 6 9V VIN 50 Ω 1.2k Ω Cathode C 4 Tr1 , T r2 : 2SA1029 or other same rank products V IN Waveform Sine wave 1VP - P ( Frequency ) 15kHz at measuring V OAC, ∆ VOAC - 1 and ∆ VOAC - 2 and shall be swept at measuring f CH and f CL. PC915 Fig. 3 9V 470 Ω 100 pF Tr1 Tr2 Anode 2 AMP VO 5 + 3 AGC 8 + 7 NC GND 10 µF 10µ F DG, DP Tester 230 Ω 1 + 100 µ F NC PC915 VCC 6 9V ViN 75 Ω 1.2k Ω Cathode C 4 Tr1 , T r2 : 2SA1029 or other same rank products V IN Waveform 1VP-D 40IRE Superposition 40IRE APL50 % wave 3.58MHz 0.067ms(1/15ms) g APL (Average Picture Level ) g IRE (International Radio Engineers ) 1IRE = 7.14mV (NTSC System ) Fig. 4 Forward Current vs. Ambient Temperature 30 25 ( mA ) 20 Forward current I F 15 10 5 0 - 25 0 25 50 75 85 100 Ambient temperature T a ( ˚C) 100IRE PC915 Fig. 5 Power Dissipation vs. Ambient Temperature 300 Fig. 6 Forward Current vs. Forward Voltage 100 250 Power dissipation P ( mW ) Forward current I F ( mA ) 10 200 150 1 T a = 0˚C 25˚C 50˚C 70˚C 100 0.1 50 0 -25 0.01 1.0 0 25 50 a 75 85 ( ˚C ) 100 1.2 1.4 1.6 1.8 2.0 2.2 Ambient temperature T Forward voltage V F ( V ) Fig. 7 Supply Current vs. Ambient Temperature 14 12 10 8 6 4 2 0 - 25 150 Ω 230 Ω Fig. 8-a Relative AC Output Voltage 1 vs. Ambient Temperature 1.1 R E = 460 Ω R E = 460 Ω Relative AC output voltage Supply current I CC ( mA ) 230 Ω 150 Ω 1.0 230 Ω 150 Ω 460 Ω 0 25 50 75 100 0.9 - 25 0 AC output voltage = 1 at T a = 25˚C, R E = 230 Ω 25 50 75 100 Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C ) Test Circuit of Supply Current Test Circuit of Relative AC Output Voltage1 vs. Ambient Temperatue 9V 100pF 47pF 9V 470 Ω 2SA1029 RE PC915 6 Anode AMP VCC A 5 VO 9V 470 Ω 2SA1029 + RE PC915 6 VCC VO C + 10 µ F 9V 1.2k Ω 2SA 2 1029 3 + Cathode AGC 8 C + 10 µ F 100 µ F Vin 50 Ω 7 10 µ F Anode 2SA 2 1029 3 Cathode 1.2 kΩ AMP 5 8 AGC + 10 µ F CRT 7 Vin Input Waveform 1VP - P, f = 15kHz Sine wave PC915 Fig. 8-b Relative AC Output Voltage 2 vs. Freguency ( 1 ) T a = 25˚C Relative AC output voltage ( dB ) 0 R E = 460 Ω , C E = 47P F R E = 230 Ω , C E = 100 P F -5 R E = 150 Ω , C E = 150 P F Vin Test Circuit of Relative AC Output Voltage 2 vs. Freguency ( 1 ) 9V CE 470 Ω 2SA1029 + 2SA 100 µ F 1029 1.2 75 Ω kΩ RE PC915 Anode 2 3 Cathode AMP AGC 9V 6 5 8 VCC VO C + 10 µ F 10 µ F 9V 6 AMP AGC + CRT 7 Relative value of AC output voltage that is based on the voltage at f = 100kHz of Vin - 10 10 4 Vin Iuput Waveform 1VP - P , f = 15MHz Sine wave 10 5 10 6 10 7 Freguency f ( Hz) Fig. 8-c Relative AC Output Voltage 2 vs. Freguency ( 2 ) Relative value of AC output voltage that is based on the voltage at f = 100kHz of Vin 0 Relative AC output voltage ( dB ) T a = 25˚C Test Circuit of Relative AC Output Voltage 2 vs. Freguency ( 2 ) 100pF 9V 470 Ω 2SA1029 + Vin RE 230 Ω PC915 VCC VO -5 Anode 2SA 2 100 µ F 1029 3 1.2 50 Ω Cathode kΩ 8 10 µ F 5 + + CC CRT 7 CC = 10 µ F 1 µ F 0.1 µ F Vin Input Waveform 1VP - P, f = 15MHz Sine wave - 10 10 0 10 1 10 2 Freguency f ( Hz) 10 3 10 4 Fig. 9 Differential Gain vs. R E 6 T a = 25˚C 4 Differential gain DG ( % ) APL10% 2 APL50% 0 APL90% -2 Fig.10 Differential Phase vs. R E 2 T a = 25˚C Differential phase DP ( deg. ) 0 APL90% APL50% APL10% -2 -4 -6 -4 0 -8 100 200 300 400 500 0 100 200 RE ( Ω ) 300 RE ( Ω ) 400 500 PC915 Test Circuit of Differential Gain vs. R E and Differential Phase vs. R E V in Waveform 9V 47pF 470 Ω 2SA1029 + RE PC915 6 AMP 9V 100IRE 40IRE Superposition wave 3.58MHz 0.067ms(1/15ms) APL : Average Picture Level VCC 1.0VP-P VO 40IRE is Vin = 2.3 IB VCC- VE Vin Anode 2SA 2 100 µ F 1029 3 Cathode 50 Ω 1.2 kΩ 5 AGC 10 µ F + C DG, DP 8 Tester + 10 µ F 7 s Application Example R1 470 Ω C1 + Tr1 Tr2 2 3 100pF VCC 9V RE 230 Ω PC915 6 Anode AMP VCC 9V VCC VO VOUT + CO 10 µ F VOUT = 2.3 Vin 100 µ F 1.2k Ω Ri R2 75 Ω 5 Cathode AGC 7 C 8 CC + 10 µ F Tr1 , T r2 : 2SA1029 or other same rank products IB : DC flowed to infrared LED is : AC flowed to infrared LED VE : Emitter voltage of T r2 ( Between emitter and GND ) < Example of Circuit Setting > ( 1 ) Set for Gain Gain is represented by the following formula ; G = 2.3/ ( VCC -VE ) When using on condition that Gain = 1, set VCC -VE on 2.3V. So that R 1 and R 2 is determined. ( 2 ) Set for Input Resistance Set Ri on output impedance ( usually 75 Ω ) of a mounting equipment. ( 3 ) Set for R E When there is no signal ( input signal : 0 ) , set I LED flowed into infrared LED on 10 mA. ( 4 ) Set for Low Cut-off Frequency Low cut-off frequency with C terminal capacitance, C C , is represented by the following formula ; f C = 100/C C ( Hz ) ( C C : µ F value ) Then set Ci with input impedance of by-pass diode on as much value as possible on condition that f C >1/ ( 2 π CiR ) [R = R 1 R2 / ( R1 + R 2 ) ] s Precautions for Use ( 1 ) It is recommended that a by-pass capacitor of more than 0.01 µ F is added between V CC and GND near the device in order to stabilize power supply line. ( 2 ) Handle this product the same as with other integrated circuits against static electricity. ( 3 ) As for other general cautions, refer to the chapter “ Precautions for Use ”