S11MD8T

S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T g Taping reel type of S21MD8T is also available ( S21MD8P ) g DIN-VDE0884 approved type is also available. Low Input Driving Type Phototriac Coupler s Features 1. Low input driving current ( S11MD7T / S11MD8T / S21MD7T / S21MD8T I FT : MAX. 5mA S11MD9T /S21MD9T IFT : MAX.7mA ) 2. Pin No. 5 completely molded for external noise resistance 3. Built-in zero-cross circuit (S11MD8T/S21MD8T ) 4. High repetitive peak OFF-state voltage ( S11MD7T / S11MD8T / S11MD9T VDRM : MIN. 400V S21MD7T / S21MD8T / S21MD9T VDRM : MIN. 600V 5. Isolation voltage between input and output ( Viso : 5 000V rms ) 6. Recognized by UL, file No.E64380 s Outline Dimensions ( Unit : mm ) Internal connection diagram 6 S11MD8T 4 6.5± 0.5 6 4 g Zero-cross circuit Anode mark 1 2 3 0.9± 0.2 1.2± 0.3 1 2 3 2.54± 0.25 7.12± 0.5 7.62± 0.3 3.5± 0.5 3.35± 0.5 3.7±0.5 0.5± 0.1 0.5TYP. 0.26 ± 0.1 θ : 0 to 13 ˚ θ s Model Line-ups No zero-cross circuit Built-in zerocross circuit 100V line S11MD7T/ S11MD9T S11MD8T 200V line S21MD7T/ S21MD9T S21MD8T 1 Anode 2 Cathode 3 NC 4 Anode/ Cathode 6 Anode/ Cathode ∗ Zero-cross circuit for S11MD8T and S21MD8T s Applications 1. For triggering medium/high power triacs s Absolute Maximum Ratings Rating Parameter Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current Repetitive peak OFF-state voltage ∗2 Isolation voltage Operating temperature Storage temperture ∗3 Soldering temperature Symbol IF VR IT Isurge VDRM Viso Topr Tstg Tsol 400 5 000 - 30 to +100 - 55 to +125 260 S11MD7T/S11MD8T S11MD9T S21MD7T/S21MD8T/ S21MD9T ( Ta = 25˚C ) Unit mA V A rms A V V rms ˚C ˚C ˚C Input Output 50 6 0.1 1.2 600 ∗1 50Hz Sine wave ∗2 40 to 60% RH, AC for 1 minute, f = 60Hz ∗3 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T s Electro-optical Characteristics Input Parameter Forward voltage Reverse current Repetitive peak OFF-state current S11MD7T/S21MD7T S11MD9T/S21MD9T ON-state voltage S11MD8T/S21MD8T Holding current Critical rate of rise of OFF-state voltage Zere-cross voltage S11MD8T/S21MD8T S11MD7T/S21MD7T Minimum trigger S11MD8T/S21MD8T current S11MD9T/S21MD9T Isolation resistance S11MD7T S11MD9T/S21MD7T/ Turn-on time S21MD9T S11MD8T/S21MD8T Symbol Conditions I F = 20mA VF VR = 3V IR I DRM V DRM = Rated VT IH dV/dt VOX IFT RISO I T = 0.1A VD = 6V V DRM = 1/ 2 • Rated Resistance load, I F = 10mA V D = 6V, R L = 100Ω DC500V, 40 to 60% RH V D = 6V, R L = 100Ω I F = 20mA MIN. 0.1 100 5 x 1010 TYP. 1.2 1.5 1.7 0.5 1011 70 60 20 ( Ta = 25˚C) MAX. 1.4 10 - 5 10 - 6 2.5 2.5 3.5 35 5 7 100 100 50 Unit V A A V mA V/ µ s V mA Ω µs Output Transfer characteristics t on Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) 50 40 30 20 10 0.10 RMS ON-state current I T (Arms) 0.05 0 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 -30 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Minimum Trigger Current vs. Ambient Temperature 12 500 Minimum trigger current I FT ( mA ) 10 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0 T a = 100˚C 75˚C 50˚C 25˚C 0˚C - 30˚C V D = 6V RL = 100Ω 8 6 S11MD9T/S21MD9T 4 S11MD8T/S21MD8T 2 0 S11MD7T/S21MD7T -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 5 Relative Repetitive Peak OFF-State Voltage vs. Ambient Temperature 1.3 Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25˚C) Fig. 6 ON-state Voltage vs. Ambient Temperature 1.9 I T = 100mA S11MD8T 1.2 ON-state voltage V T ( V ) S11MD7T/S21MD7T S11MD9T/S21MD9T 1.8 1.1 1.7 S21MD8T 1.0 S11MD8T/S21MD8T 1.6 0.9 1.5 S11MD7T/S21MD7T S11MD9T/S21MD9T 1.4 1.3 -30 0.8 0.7 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 7 Holding Current vs. Ambient Temperature 10 V D = 6V 5 Holding current I H ( mA ) Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MD7T/S11MD9T ) 2 Repetitive peak OFF-state current I DRM ( A ) T a = 25˚C 10 -9 2 S11MD8T/S21MD8T 1 0.5 5 2 0.2 0.1 - 30 S11MD7T/S21MD7T S11MD9T/S21MD9T 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 -10 10 5 100 200 300 400 500 600 OFF-state voltage V D ( V ) S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MD8T/S21MD8T) 2 Fig. 8-c Repetitive Peak OFF-state Current vs. OFF-state Voltage (S21MD7T/S21MD9T ) Repetitive peak OFF-state current I DRM ( A ) 10 - 9 5 Repetitive peak OFF-state current I DRM ( A ) T a = 25˚C 10 - 7 S21MD8T T a =25˚C 5 2 S11MD8T 2 10 - 10 5 10 - 8 2 5 10 - 11 200 300 400 500 OFF-stage voltage V D ( V ) 600 100 200 300 400 500 Off-state voltage V D ( V ) 600 100 Fig. 9-a Repetitive Peak OFF-state Current vs. Ambient Temperature (S11MD7T/S11MD9T/S21MD7T/S21MD9T) -7 10 Repetitive peak OFF-state current I DRM ( A ) VD = 400V (S11MD7T/S11MD9T ) VD = 600V (S21MD7T/S21MD9T ) 10 - 8 Fig. 9-b Repetitive Peak OFF-state Current vs. Ambient Temperature (S11MD8T/S21MD8T ) -4 10 Repetitive peak OFF-state current I DRM (A) VD = 400V (S11MD8T ) VD = 600V (S21MD8T ) 10 - 5 S21MD8T 10 - 6 S11MD8T 10 - 7 10 - 9 10 - 10 10 - 11 10 - 8 10 - 12 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 10 - 9 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig.10 Zero-cross Voltage vs. Ambient Temperature (S11MD8T/S21MD8T ) R load I F = 10mA Zero-cross voltage V OX ( V ) 25 Fig.11-a Turn-on Time vs. Forward Current ( S11MD7T ) 200 V D = 6V R L = 100Ω Turn-on time t on ( µs ) 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 100 20 50 30 20 5 10 20 Forward current I F ( mA ) 50 15 -30 S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T Fig.11-b Turn-on Time vs. Forward Current (S11MD8T/S21MD8T ) 100 V D = 6V R L = 100Ω Fig.11-c Turn-on Time vs. Forward Current (S11MD9T/S21MD7T/S21MD9T ) 200 V D = 6V R L = 100Ω Turn-on time t on ( µ s ) 50 Turn-on time t on ( µs ) 5 10 20 Forward current I F ( mA) 50 100 50 20 30 10 20 5 10 20 Forward current I F ( mA ) 50 Fig.12-a ON-state Current vs. ON-state Voltage (S11MD7T/S21MD7T/S11MD9T/S21MD9T ) 100 90 80 ON-state current I T ( mA ) I F = 20mA Ta = 25˚C Fig.12-b ON-state Current vs. ON-state Voltage (S11MD8T/S21MD8T ) 100 90 80 ON-state current I T ( mA ) 70 60 S21MD8T 50 S11MD8T 40 30 20 10 0 I F = 20mA T a = 25˚C 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage V T ( V ) S11MD7T S21MD7T S11MD9T S21MD9T 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage V T ( V ) s Basic Operation Circuit S11MD7T/S11MD8T/S11MD9T S21MD7T/S21MD8T/S21MD9T 1 6 + VCC Load AC100V (S11MD7T/S11MD8T/S11MD9T ) AC200V (S21MD7T/S21MD8T/S21MD9T ) 2 VIN Zerocross circuit 4 Zero-cross Circuit ( S11MD8T/S21MD8T ) q Please refer to the chapter “ Precautions for Use.”