S12MD1

S12MD1V/S12MD3 S12MD1V/S12MD3 s Features 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN. 400V ) 3. Trigger current I FT : MAX. 15mA at R G = 20kΩ 4. For half-wave control ••• S12MD1V For full-wave control ••• S12MD3 5. Recognized by UL, file No. E64380 g S12MD1V and S12MD3 are for 100V line Photothyristor Coupler g Lead forming type ( I type ) and taping reel type ( P type) of S12MD1V are also available. ( S12MD1VI/S12MDIP ) s Outline Dimensions S12MD1V 2.54± 0.25 6 5 S12MD1V 4 6.5± 0.5 6 5 4 ( Unit : mm ) Internal connection diagram 1 Anode mark 2 3 0.9± 0.2 1.2± 0.3 3.5± 0.5 1 2 3 7.12± 0.5 7.62± 0.3 1 2 3 4 5 6 Anode Cathode NC Cathode Anode Gate 3.35± 0.5 3.7± 0.5 s Applications 1. ON-OFF operation for a low power load 2. For triggering high power thyristor and triac 0.5± 0.1 0.5TYP. 0.26 ± 0.1 θ : 0 to 13 ˚ θ S12MD3 2.54± 0.25 8 7 6 0.8± 0.2 5 Internal connection diagram 8 7 6 5 S12MD3 Anode mark 1 1.2± 0.3 2 3 4 0.85± 0.3 3.5± 0.5 1 2 3 4 1 2 5 6 4 3 8 7 Anode Cathode Gate Anode/ cathode 9.22±0.5 7.62± 0.3 0.5± 0.1 3.0± 0.5 0.5TYP. 0.26 ± 0.1 θ : 0 to 13 ˚ θ “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” S12MD1V/S12MD3 s Absolute Maximum Ratings Parameter Input Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current ∗2 Repetitive peak OFF-state voltage ∗2 Repetitive peak reverse voltage ∗3 Isolation voltage Operating temperature Storage temperature ∗4 Soldering temperature ∗3 40 to 60% RH, AC for 1 minute ∗4 For 10 seconds ( Ta = 25˚C) Symbol IF VR IT Isurge V DRM V RRM V iso T opr T stg T sol Rating S12MD1V 50 6 200 2 400 400 5 000 1 500 - 30 to + 100 - 40 to + 125 260 S12MD3 Unit mA V mA rms A V V V rms ˚C ˚C ˚C Output ∗1 50Hz, sine wave ∗2 R G = 20kΩ s Electro-optical Characteristics Input Parameter Forward voltage Reverse current Repetitive peak OFF-state current ∗5 Repetitive peak reverse current ON-state voltage Holding current Critical rate of rise of OFF-state voltage Minimum trigger current Isolation resistance Turn-on time Symbol VF IR I DRM I RRM VT IH dV/dt I FT R ISO t on Conditions I F = 30mA V R = 3V V DRM = Rated, R G = 20kΩ V RRM = Rated, R G = 20kΩ I T = 200mA V D = 6V, R G = 20kΩ V DRM = 1/ 2 Rated, R G = 20kΩ V D = 6V, R L = 100Ω , R G = 20kΩ DC500V, 40 to 60% RH V D = 6V, I F = 30mA, R G = 20kΩ , R L = 100Ω ( Ta = 25˚C ) MIN. 3 5 x 1010 TYP. 1.2 1.0 0.3 1011 10 MAX. 1.4 10- 5 10- 6 10- 6 1.4 1 15 60 Unit V A A A V mA V/ µ s mA Ω µs Output Transfercharacteristics ∗5 Applies only to S12MD1V Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) 50 40 S12MD1V 30 S12MD3 20 10 RMS ON-state current I T ( mA rms ) 200 100 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 - 30 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 S12MD1V/S12MD3 Fig. 3 Forward Current vs. Forward Voltage 500 Minimum trigger current I FT ( mA ) 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V ) 3.0 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 T a = 75˚C 50˚C 25˚C 0˚C - 25˚C Fig. 4 Minimum Trigger Current vs. Ambient Temperature 6 V D = 6V R L = 100Ω 5 R G= Ω 10k 4 20kΩ 3 2 50kΩ 1 Fig. 5 Minimum Trigger Current vs. Gate Resistance 50 VD = 6V R L = 100Ω T a = 25˚C Fig. 6 Break Over Voltage vs. Ambient Temperature 600 R G = 10kΩ 20kΩ 50kΩ 100kΩ 300 Minimum trigger current I FT ( mA ) 500 Break over voltage VBO ( V ) 20 400 10 5 200 2 100 1 1 2 5 10 20 50 Gate resistance R G ( KΩ ) 100 200 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature 100 V DRM = 1/ 2 • Rated Critical rate of rise of OFF-state voltage dV/dt ( V/ µ s ) 50 Fig. 8 Holding Current vs. Ambient Temperature 1.0 V D = 6V 0.5 Holding current I H ( mA ) R G = 10kΩ 20kΩ 20 10 R G = 10kΩ 0.2 0.1 0.05 50kΩ 20kΩ 5 50kΩ 2 1 0.02 0.01 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S12MD1V/S12MD3 Fig. 9 Repetitive Peak OFF-state Current vs. Ambient Temperature 10 - 4 Repetitive peak OFF-state current I DRM ( A ) 5 V DRM = Rated R G = 20kΩ 10 - 5 5 10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 0 20 40 60 80 100 Ambient temperature T a ( ˚C ) s Basic Operation Circuit q S12MD1V Medium/High Power Thyristor Drive Circuit + VCC 1 2 6 Load CG RG ZS AC 100V 5 VIN 3 4 ZS : Snubber circuit Medium/High Power Triac Drive Circuit (Zero-cross Operation ) Load + VCC 1 2 6 5 RG CG AC 100V VIN 3 4 S12MD1V/S12MD3 q S12MD3 Low Power Load Drive Circuit 8 7 2 3 VIN 4 RG 6 5 ZS : Snubber circuit CG RG CG ZS Load AC 100V + VCC 1 Medium/High Power Triac Drive Circuit 8 7 2 3 VIN 4 5 RG 6 CG RG CG AC 100V Load 1 + VCC q Please refer to the chapter “ Precautions for Use” ( Page 78 to 93 ) .